Stable and low resistive zinc contacts for SnS based optoelectronic devices


Autoria(s): Reddy, Koteeswara N; Devika, M; Gunasekhar, K
Data(s)

2014

Resumo

The contact behavior of tin mono sulfide (SnS) nanocrystalline thin films with zinc (Zn) and silver (Ag) contacts was studied. SnS films have been deposited on glass substrates by thermal evaporation technique at a growth temperature of 300 degrees C. The as-grown SnS films composed of vertically aligned nanocrystallites with a preferential orientation along the < 010 > direction. SnS films exhibited excellent chemical stoichiometry and direct optical band gap of 1.96 eV. These films also exhibited excellent Ohmic characteristics and low electrical resistivity with Zn contacts. The observed electrical resistivity of SnS films with Zn contacts is 22 times lower than that of the resistivity with Ag contacts. The interfacing analysis reveals the formation of conductive Zn-S layer between SnS and Zn as interfacial layer. (C) 2014 Elsevier B. V. All rights reserved.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/49114/1/thi_sol_fil_558_326_2014.pdf

Reddy, Koteeswara N and Devika, M and Gunasekhar, K (2014) Stable and low resistive zinc contacts for SnS based optoelectronic devices. In: THIN SOLID FILMS, 558 . pp. 326-329.

Publicador

ELSEVIER SCIENCE SA

Relação

http://dx.doi.org/10.1016/j.tsf.2014.02.083

http://eprints.iisc.ernet.in/49114/

Palavras-Chave #Aerospace Engineering (Formerly, Aeronautical Engineering) #Centre for Nano Science and Engineering #Instrumentation and Applied Physics (Formally ISU)
Tipo

Journal Article

PeerReviewed