Simulation of new p-type pixel strip detector with enhanced multiplication effect

This Master’s Thesis is dedicated to the simulation of new p-type pixel strip detector with enhanced multiplication effect. It is done for high-energy physics experiments upgrade such as Super Large Hadron Collider especially for Compact Muon Solenoid particle track silicon detectors. These detectors are used in very harsh radiation environment and should have good radiation hardness. The device engineering technology for developing more radiation hard particle detectors is used for minimizing the radiation degradation. New detector structure with enhanced multiplication effect is proposed in this work. There are studies of electric field and electric charge distribution of conventional and new p-type detector under reverse voltage bias and irradiation. Finally, the dependence of the anode current from the applied cathode reverse voltage bias under irradiation is obtained in this Thesis. For simulation Silvaco Technology Computer Aided Design software was used. Athena was used for creation of doping profiles and device structures and Atlas was used for getting electrical characteristics of the studied devices. The program codes for this software are represented in Appendixes.

tCAD: a 3D modeling application on a depth enhanced tabletop computer

Tabletop computers featuring multi-touch input and object tracking are a common platform for research on Tangible User Interfaces (also known as Tangible Interaction). However, such systems are confined to sensing activity on the tabletop surface, disregarding the rich and relatively unexplored interaction canvas above the tabletop. This dissertation contributes with tCAD, a 3D modeling tool combining fiducial marker tracking, finger tracking and depth sensing in a single system. This dissertation presents the technical details of how these features were integrated, attesting to its viability through the design, development and early evaluation of the tCAD application. A key aspect of this work is a description of the interaction techniques enabled by merging tracked objects with direct user input on and above a table surface.

TCAD approaches to multidimensional simulation of advanced semiconductor devices

Technology scaling increasingly emphasizes complexity and non-ideality of the electrical behavior of semiconductor devices and boosts interest on alternatives to the conventional planar MOSFET architecture. TCAD simulation tools are fundamental to the analysis and development of new technology generations. However, the increasing device complexity is reflected in an augmented dimensionality of the problems to be solved. The trade-off between accuracy and computational cost of the simulation is especially influenced by domain discretization: mesh generation is therefore one of the most critical steps and automatic approaches are sought. Moreover, the problem size is further increased by process variations, calling for a statistical representation of the single device through an ensemble of microscopically different instances. The aim of this thesis is to present multi-disciplinary approaches to handle this increasing problem dimensionality in a numerical simulation perspective. The topic of mesh generation is tackled by presenting a new Wavelet-based Adaptive Method (WAM) for the automatic refinement of 2D and 3D domain discretizations. Multiresolution techniques and efficient signal processing algorithms are exploited to increase grid resolution in the domain regions where relevant physical phenomena take place. Moreover, the grid is dynamically adapted to follow solution changes produced by bias variations and quality criteria are imposed on the produced meshes. The further dimensionality increase due to variability in extremely scaled devices is considered with reference to two increasingly critical phenomena, namely line-edge roughness (LER) and random dopant fluctuations (RD). The impact of such phenomena on FinFET devices, which represent a promising alternative to planar CMOS technology, is estimated through 2D and 3D TCAD simulations and statistical tools, taking into account matching performance of single devices as well as basic circuit blocks such as SRAMs. Several process options are compared, including resist- and spacer-defined fin patterning as well as different doping profile definitions. Combining statistical simulations with experimental data, potentialities and shortcomings of the FinFET architecture are analyzed and useful design guidelines are provided, which boost feasibility of this technology for mainstream applications in sub-45 nm generation integrated circuits.

TCAD for PV: a fast method for accurately modelling metal impurity evolution during solar cell processing

Coupled device and process silumation tools, collectively known as technology computer-aided design (TCAD), have been used in the integrated circuit industry for over 30 years. These tools allow researchers to quickly converge on optimized devide designs and manufacturing processes with minimal experimental expenditures. The PV industry has been slower to adopt these tools, but is quickly developing competency in using them. This paper introduces a predictive defect engineering paradigm and simulation tool, while demonstrating its effectiveness at increasing the performance and throughput of current industrial processes. the impurity-to-efficiency (I2E) simulator is a coupled process and device simulation tool that links wafer material purity, processing parameters and cell desigh to device performance. The tool has been validated with experimental data and used successfully with partners in industry. The simulator has also been deployed in a free web-accessible applet, which is available for use by the industrial and academic communities.

Emergência e crescimento de plântulas de bacabi (Oenocarpus mapora Karsten) e bacaba (Oenocarpus distichus Mart.) e estimativas de parâmetros genéticos

Foi estudada a variabilidade genética em progênies de bacabi (Oenocarpus mapora Karsten) e bacaba (Oenocarpus distichus Mart.) para caracteres de emergência e crescimento inicial de mudas. Foram coletados frutos maduros de 47 matrizes em quintais de produtores rurais e no Banco de Germoplasma da Embrapa Amazônia Oriental, envolvendo análise de 47 progênies de polinização aberta delineadas em blocos ao acaso, com quatro repetições e parcelas de 24 sementes. As variáveis avaliadas foram: a percentagem de emergência (PE), tempo médio de emergência (TME), taxa de crescimento absoluto da altura de plântulas (TCAA) e taxa de crescimento absoluto do diâmetro de plântulas (TCAD). As progênies apresentaram diferenças significativas (p≤0,01) para todos os caracteres da análise das duas espécies, com boa precisão experimental. Para a herdabilidade no sentido amplo foi verificado que no conjunto total de progênies e no conjunto de progênies de bacabi todos os caracteres estudados apresentaram estimativas de herdabilidade acima de 50%. As exceções foram para TME e TCAD, no conjunto de progênies de bacaba, com estimativas de herdabilidade abaixo de 50%. Os coeficientes "b" apresentaram a mesma tendência observada na herdabilidade, e suas magnitudes expressam também a variabilidade genética. Os ganhos de seleção estimados a partir das porcentagens de seleção pré-determinados mostraram valores altos para todos os caracteres, favorecidos pela pressão de seleção com uma intensidade de 10% para o total de progênies e apenas bacabi e 20% para as progênies somente de bacaba.

Development of advanced silicon radiation detectors for harsh radiation environment

This thesis describes the development of advanced silicon radiation detectors and their characterization by simulations, used in the work for searching elementary particles in the European Organization for Nuclear Research, CERN. Silicon particle detectors will face extremely harsh radiation in the proposed upgrade of the Large Hadron Collider, the future high-energy physics experiment Super-LHC. The increase in the maximal fluence and the beam luminosity up to 1016 neq / cm2 and 1035 cm-2s-1 will require detectors with a dramatic improvement in radiation hardness, when such a fluence will be far beyond the operational limits of the present silicon detectors. The main goals of detector development concentrate on minimizing the radiation degradation. This study contributes mainly to the device engineering technology for developing more radiation hard particle detectors with better characteristics. Also the defect engineering technology is discussed. In the nearest region of the beam in Super-LHC, the only detector choice is 3D detectors, or alternatively replacing other types of detectors every two years. The interest in the 3D silicon detectors is continuously growing because of their many advantages as compared to conventional planar detectors: the devices can be fully depleted at low bias voltages, the speed of the charge collection is high, and the collection distances are about one order of magnitude less than those of planar technology strip and pixel detectors with electrodes limited to the detector surface. Also the 3D detectors exhibit high radiation tolerance, and thus the ability of the silicon detectors to operate after irradiation is increased. Two parameters, full depletion voltage and electric field distribution, is discussed in more detail in this study. The full depletion of the detector is important because the only depleted area in the detector is active for the particle tracking. Similarly, the high electric field in the detector makes the detector volume sensitive, while low-field areas are non-sensitive to particles. This study shows the simulation results of full depletion voltage and the electric field distribution for the various types of 3D detectors. First, the 3D detector with the n-type substrate and partial-penetrating p-type electrodes are researched. A detector of this type has a low electric field on the pixel side and it suffers from type inversion. Next, the substrate is changed to p-type and the detectors having electrodes with one doping type and the dual doping type are examined. The electric field profile in a dual-column 3D Si detector is more uniform than that in the single-type column 3D detector. The dual-column detectors are the best in radiation hardness because of their low depletion voltages and short drift distances.

Effects of vacancy-type defects in silicon based particle detectors

The semiconductor particle detectors used at CERN experiments are exposed to radiation. Under radiation, the formation of lattice defects is unavoidable. The defects affect the depletion voltage and leakage current of the detectors, and hence affect on the signal-to-noise ratio of the detectors. This shortens the operational lifetime of the detectors. For this reason, the understanding of the formation and the effects of radiation induced defects is crucial for the development of radiation hard detectors. In this work, I have studied the effects of radiation induced defects-mostly vacancy related defects-with a simulation package, Silvaco. Thus, this work essentially concerns the effects of radiation induced defects, and native defects, on leakage currents in particle detectors. Impurity donor atom-vacancy complexes have been proved to cause insignificant increase of leakage current compared with the trivacancy and divacancy-oxygen centres. Native defects and divacancies have proven to cause some of the leakage current, which is relatively small compared with trivacancy and divacancy-oxygen.

3D Stripixel Detectors Simulation

Solid-state silicon detectors have replaced conventional ones in almost all recent high-energy physics experiments. Pixel silicon sensors don't have any alternative in the area near the interaction point because of their high resolution and fast operation speed. However, present detectors hardly withstand high radiation doses. Forthcoming upgrade of the LHC in 2014 requires development of a new generation of pixel detectors which will be able to operate under ten times increased luminosity. A planar fabrication technique has some physical limitations; an improvement of the radiation hardness will reduce sensitivity of a detector. In that case a 3D pixel detector seems to be the most promising device which can overcome these difficulties. The objective of this work was to model a structure of the 3D stripixel detector and to simulate electrical characteristics of the device. Silvaco Atlas software has been used for these purposes. The structures of single and double sided dual column detectors with active edges were described using special command language. Simulations of these detectors have shown that electric field inside an active area has more uniform distribution in comparison to the planar structure. A smaller interelectrode space leads to a stronger field and also decreases the collection time. This makes the new type of detectors more radiation resistant. Other discovered advantages are the lower full depletion voltage and increased charge collection efficiency. So the 3D stripixel detectors have demonstrated improved characteristics and will be a suitable replacement for the planar ones.

Transient current technique simulation of semiconductor detectors

Nowadays advanced simulation technologies of semiconductor devices occupies an important place in microelectronics production process. Simulation helps to understand devices internal processes physics, detect new effects and find directions for optimization. Computer calculation reduces manufacturing costs and time. Modern simulation suits such as Silcaco TCAD allow simulating not only individual semiconductor structures, but also these structures in the circuit. For that purpose TCAD include MixedMode tool. That tool can simulate circuits using compact circuit models including semiconductor structures with their physical models. In this work, MixedMode is used for simulating transient current technique setup, which include detector and supporting electrical circuit. This technique was developed by RD39 collaboration project for investigation radiation detectors radiation hard properties.

Reference evapotranspiration estimation inside greenhouses

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors

This paper proposes a drain current model for triple-gate n-type junctionless nanowire transistors. The model is based on the solution of the Poisson equation. First, the 2-D Poisson equation is used to obtain the effective surface potential for long-channel devices, which is used to calculate the charge density along the channel and the drain current. The solution of the 3-D Laplace equation is added to the 2-D model in order to account for the short-channel effects. The proposed model is validated using 3-D TCAD simulations where the drain current and its derivatives, the potential, and the charge density have been compared, showing a good agreement for all parameters. Experimental data of short- channel devices down to 30 nm at different temperatures have been also used to validate the model.

An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices

Triple-gate devices are considered a promising solution for sub-20 nm era. Strain engineering has also been recognized as an alternative due to the increase in the carriers mobility it propitiates. The simulation of strained devices has the major drawback of the stress non-uniformity, which cannot be easily considered in a device TCAD simulation without the coupled process simulation that is time consuming and cumbersome task. However, it is mandatory to have accurate device simulation, with good correlation with experimental results of strained devices, allowing for in-depth physical insight as well as prediction on the stress impact on the device electrical characteristics. This work proposes the use of an analytic function, based on the literature, to describe accurately the strain dependence on both channel length and fin width in order to simulate adequately strained triple-gate devices. The maximum transconductance and the threshold voltage are used as the key parameters to compare simulated and experimental data. The results show the agreement of the proposed analytic function with the experimental results. Also, an analysis on the threshold voltage variation is carried out, showing that the stress affects the dependence of the threshold voltage on the temperature. (C) 2011 Elsevier Ltd. All rights reserved.

Physical models for numerical simulation of Si-based nanoscale FETs and sensors

To continuously improve the performance of metal-oxide-semiconductor field-effect-transistors (MOSFETs), innovative device architectures, gate stack engineering and mobility enhancement techniques are under investigation. In this framework, new physics-based models for Technology Computer-Aided-Design (TCAD) simulation tools are needed to accurately predict the performance of upcoming nanoscale devices and to provide guidelines for their optimization. In this thesis, advanced physically-based mobility models for ultrathin body (UTB) devices with either planar or vertical architectures such as single-gate silicon-on-insulator (SOI) field-effect transistors (FETs), double-gate FETs, FinFETs and silicon nanowire FETs, integrating strain technology and high-κ gate stacks are presented. The effective mobility of the two-dimensional electron/hole gas in a UTB FETs channel is calculated taking into account its tensorial nature and the quantization effects. All the scattering events relevant for thin silicon films and for high-κ dielectrics and metal gates have been addressed and modeled for UTB FETs on differently oriented substrates. The effects of mechanical stress on (100) and (110) silicon band structures have been modeled for a generic stress configuration. Performance will also derive from heterogeneity, coming from the increasing diversity of functions integrated on complementary metal-oxide-semiconductor (CMOS) platforms. For example, new architectural concepts are of interest not only to extend the FET scaling process, but also to develop innovative sensor applications. Benefiting from properties like large surface-to-volume ratio and extreme sensitivity to surface modifications, silicon-nanowire-based sensors are gaining special attention in research. In this thesis, a comprehensive analysis of the physical effects playing a role in the detection of gas molecules is carried out by TCAD simulations combined with interface characterization techniques. The complex interaction of charge transport in silicon nanowires of different dimensions with interface trap states and remote charges is addressed to correctly reproduce experimental results of recently fabricated gas nanosensors.

Simulazione numerica di celle solari in silicio ad eterogiunzione ad un sole e in concentrazione

Il lavoro di tesi ha come obiettivo lo studio e lo sviluppo tramite simulazioni numeriche di due celle in silicio ad eterogiunzione, una con parametri forniti dal CNR (Comitato Nazionale delle Ricerche) ed un’altra di tipo HIT (Heterojunction with Intrinsic Thin-layer). Lo studio e lo sviluppo delle due celle sono stati effettuati mediante un flusso TCAD il quale permette una maggiore flessibilità e completezza nella descrizione dei modelli fisici ed elettrici.

Simulazione numerica di celle solari Metal Wrap Through (MWT) con passivazione dell'interfaccia di base e contatti puntuali

L'energia solare rientra nel gruppo delle energie rinnovabili, ovvero che provengono da una fonte il cui utilizzo attuale non ne pregiudica la disponibilità nel futuro. L'energia solare ha molti vantaggi, poiché è inesauribile ed è una risorsa d'immediata disponibilità perché giunge attraverso i raggi del sole. La conversione fotovoltaica sfrutta il meccanismo di generazione di carica elettrica prodotto dall'interazione della radiazione luminosa su di un materiale semiconduttore. La necessità di creare energia riducendo al minimo l'impatto ambientale ed il contemporaneo aumento del prezzo di fonti fossili come ad esempio il petrolio ed il carbone (senza trascurare il fatto che le riserve di essi sono, di fatto, esauribili) ha portato un aumento considerevole della produzione di energia elettrica tramite conversione fotovoltaica. Allo stato attuale dell'economia e dei mercati, sebbene il settore fotovoltaico sia in forte crescita, non è esente da un parametro che ne descrive le caratteristiche economiche ed energetiche, il cosiddetto rapporto costo/efficienza. Per efficienza, si intende la quantità di energia elettrica prodotta rispetto alla potenza solare incidente per irraggiamento, mentre per costo si intende quello sostenuto per la costruzione della cella. Ridurre il rapporto costo/efficienza equivale a cercare di ottenere un'efficienza maggiore mantenendo inalterati i costi, oppure raggiungere una medio-alta efficienza ma ridurre in maniera significativa la spesa di fabbricazione. Quindi, nasce la necessità di studiare e sviluppare tecnologie di celle solari all'avanguardia, che adottino accorgimenti tecnologici tali per cui, a parità di efficienza di conversione, il costo di produzione della cella sia il più basso possibile. L'efficienza dei dispositivi fotovoltaici è limitata da perdite ottiche, di ricombinazione di carica e da resistenze parassite che dipendono da diversi fattori, tra i quali, le proprietà ottiche e di trasporto di carica dei materiali, l'architettura della cella e la capacità di intrappolare la luce da parte del dispositivo. Per diminuire il costo della cella, la tecnologia fotovoltaica ha cercato di ridurre il volume di materiale utilizzato (in genere semiconduttore), dal momento in cui si ritiene che il 40% del costo di una cella solare sia rappresentato dal materiale. Il trend che questo approccio comporta è quello di spingersi sempre di più verso spessori sottili, come riportato dalla International Technology Roadmap for Photovoltaic, oppure ridurre il costo della materia prima o del processo. Tra le architetture avanzate di fabbricazione si analizzano le Passivated Emitter and Rear Cell-PERC e le Metal Wrap Through-MWT Cell, e si studia, attraverso simulazioni numeriche TCAD, come parametri geometrici e di drogaggio vadano ad influenzare le cosiddette figure di merito di una cella solare.