Silicon Photomultipliers (SiPM) as novel photodetectors for PET

Next generation PET scanners should fulfill very high requirements in terms of spatial, energy and timing resolution. Modern scanner performances are inherently limited by the use of standard photomultiplier tubes. The use of Silicon Photomultipliers (SiPMs) is proposed for the construction of a 4D-PET module of 4.8×4.8 cm2 aimed to replace the standard PMT based PET block detector. The module will be based on a LYSO continuous crystal read on two faces by Silicon Photomultipliers. A high granularity detection surface made by SiPM matrices of 1.5 mm pitch will be used for the x–y photon hit position determination with submillimetric accuracy, while a low granularity surface constituted by 16 mm2 SiPM pixels will provide the fast timing information (t) that will be used to implement the Time of Flight technique (TOF). The spatial information collected by the two detector layers will be combined in order to measure the Depth of Interaction (DOI) of each event (z). The use of large area multi-pixel Silicon Photomultiplier (SiPM) detectors requires the development of a multichannel Data Acquisition system (DAQ) as well as of a dedicated front-end in order not to degrade the intrinsic detector capabilities and to manage many channels. The paper describes the progress made on the development of the proof of principle module under construction at the University of Pisa.

Test di silicon photomultipliers (sipm) accoppiati a scintillatori

In questa tesi si riportano i risultati di uno studio della risoluzione temporale di un fotomoltiplicatore al Silicio (SiPM). La diffusione di questi rivelatori è in notevole aumento sia nelle ricerche di Fisica Nucleare e Subnucleare che nelle applicazioni mediche. I vantaggi sono legati alla loro insensibilità ai campi magnetici e ai facili modi di operazione (piccoli, robusti e con utilizzo a basso voltaggio). Usati sino ad ora per la misura di cariche, sono oggi di grande interesse per possibili applicazioni che richiedano alta risoluzione temporale (sistemi di tempo di volo, trigger, calorimetria). In questo studio sono stati studiati due tipi diversi di accoppiamento Scintillatore-SiPM: diretto o tramite fibre. Per queste analisi sono stati utilizzati diversi metodi di acquisizione e successivamente si sono incrociati i relativi risultati.

Design of a CMOS amplifier for breast cancer detection

A transimpedance amplifier (TIA) is used, in radiation detectors like the positron emission tomography(PET), to transform the current pulse produced by a photo-sensitive device into an output voltage pulse with a desired amplitude and shape. The TIA must have the lowest noise possible to maximize the output. To achieve a low noise, a circuit topology is proposed where an auxiliary path is added to the feedback TIA input, In this auxiliary path a differential transconductance block is used to transform the node voltage in to a current, this current is then converted to a voltage pulse by a second feedback TIA complementary to the first one, with the same amplitude but 180º out of phase with the first feedback TIA. With this circuit the input signal of the TIA appears differential at the output, this is used to try an reduced the circuit noise. The circuit is tested with two different devices, the Avalanche photodiodes (APD) and the Silicon photomultiplier (SIPMs). From the simulations we find that when using s SIPM with Rx=20kΩ and Cx=50fF the signal to noise ratio is increased from 59 when using only one feedback TIA to 68.3 when we use an auxiliary path in conjunction with the feedback TIA. This values where achieved with a total power consumption of 4.82mv. While the signal to noise ratio in the case of the SIPM is increased with some penalty in power consumption.

Detectores monolíticos y sensores compatibles con altos campos magnéticos para tomografía por emisión de positrones

Esta tesis recoje un trabajo experimental centrado en profundizar sobre el conocimiento de los bloques detectores monolíticos como alternativa a los detectores segmentados para tomografía por emisión de positrones (Positron Emission Tomography, PET). El trabajo llevado a cabo incluye el desarrollo, la caracterización, la puesta a punto y la evaluación de prototipos demostradores PET utilizando bloques monolíticos de ortosilicato de lutecio ytrio dopado con cerio (Cerium-Doped Lutetium Yttrium Orthosilicate, LYSO:Ce) usando sensores compatibles con altos campos magnéticos, tanto fotodiodos de avalancha (Avalanche Photodiodes, APDs) como fotomultiplicadores de silicio (Silicon Photomultipliers, SiPMs). Los prototipos implementados con APDs se construyeron para estudiar la viabilidad de un prototipo PET de alta sensibilidad previamente simulado, denominado BrainPET. En esta memoria se describe y caracteriza la electrónica frontal integrada utilizada en estos prototipos junto con la electrónica de lectura desarrollada específicamente para los mismos. Se muestran los montajes experimentales para la obtención de las imágenes tomográficas PET y para el entrenamiento de los algoritmos de red neuronal utilizados para la estimación de las posiciones de incidencia de los fotones γ sobre la superficie de los bloques monolíticos. Con el prototipo BrainPET se obtuvieron resultados satisfactorios de resolución energética (13 % FWHM), precisión espacial de los bloques monolíticos (~ 2 mm FWHM) y resolución espacial de la imagen PET de 1,5 - 1,7 mm FWHM. Además se demostró una capacidad resolutiva en la imagen PET de ~ 2 mm al adquirir simultáneamente imágenes de fuentes radiactivas separadas a distancias conocidas. Sin embargo, con este prototipo se detectaron también dos limitaciones importantes. En primer lugar, se constató una falta de flexibilidad a la hora de trabajar con un circuito integrado de aplicación específica (Application Specific Integrated Circuit, ASIC) cuyo diseño electrónico no era propio sino comercial, unido al elevado coste que requieren las modificaciones del diseño de un ASIC con tales características. Por otra parte, la caracterización final de la electrónica integrada del BrainPET mostró una resolución temporal con amplio margen de mejora (~ 13 ns FWHM). Tomando en cuenta estas limitaciones obtenidas con los prototipos BrainPET, junto con la evolución tecnológica hacia matrices de SiPM, el conocimiento adquirido con los bloques monolíticos se trasladó a la nueva tecnología de sensores disponible, los SiPMs. A su vez se inició una nueva estrategia para la electrónica frontal, con el ASIC FlexToT, un ASIC de diseño propio basado en un esquema de medida del tiempo sobre umbral (Time over Threshold, ToT), en donde la duración del pulso de salida es proporcional a la energía depositada. Una de las características más interesantes de este esquema es la posibilidad de manejar directamente señales de pulsos digitales, en lugar de procesar la amplitud de las señales analógicas. Con esta arquitectura electrónica se sustituyen los conversores analógicos digitales (Analog to Digital Converter, ADCs) por conversores de tiempo digitales (Time to Digital Converter, TDCs), pudiendo implementar éstos de forma sencilla en matrices de puertas programmable ‘in situ’ (Field Programmable Gate Array, FPGA), reduciendo con ello el consumo y la complejidad del diseño. Se construyó un nuevo prototipo demostrador FlexToT para validar dicho ASIC para bloques monolíticos o segmentados. Se ha llevado a cabo el diseño y caracterización de la electrónica frontal necesaria para la lectura del ASIC FlexToT, evaluando su linealidad y rango dinámico, el comportamiento frente a ruido así como la no linealidad diferencial obtenida con los TDCs implementados en la FPGA. Además, la electrónica presentada en este trabajo es capaz de trabajar con altas tasas de actividad y de discriminar diferentes centelleadores para aplicaciones phoswich. El ASIC FlexToT proporciona una excelente resolución temporal en coincidencia para los eventos correspondientes con el fotopico de 511 keV (128 ps FWHM), solventando las limitaciones de resolución temporal del prototipo BrainPET. Por otra parte, la resolución energética con bloques monolíticos leidos por ASICs FlexToT proporciona una resolución energética de 15,4 % FWHM a 511 keV. Finalmente, se obtuvieron buenos resultados en la calidad de la imagen PET y en la capacidad resolutiva del demostrador FlexToT, proporcionando resoluciones espaciales en el centro del FoV en torno a 1,4 mm FWHM. ABSTRACT This thesis is focused on the development of experimental activities used to deepen the knowledge of monolithic detector blocks as an alternative to segmented detectors for Positron Emission Tomography (PET). It includes the development, characterization, setting up, running and evaluation of PET demonstrator prototypes with monolithic detector blocks of Cerium-doped Lutetium Yttrium Orthosilicate (LYSO:Ce) using magnetically compatible sensors such as Avalanche Photodiodes (APDs) and Silicon Photomultipliers (SiPMs). The prototypes implemented with APDs were constructed to validate the viability of a high-sensitivity PET prototype that had previously been simulated, denominated BrainPET. This work describes and characterizes the integrated front-end electronics used in these prototypes, as well as the electronic readout system developed especially for them. It shows the experimental set-ups to obtain the tomographic PET images and to train neural networks algorithms used for position estimation of photons impinging on the surface of monolithic blocks. Using the BrainPET prototype, satisfactory energy resolution (13 % FWHM), spatial precision of monolithic blocks (~ 2 mm FWHM) and spatial resolution of the PET image (1.5 – 1.7 mm FWHM) in the center of the Field of View (FoV) were obtained. Moreover, we proved the imaging capabilities of this demonstrator with extended sources, considering the acquisition of two simultaneous sources of 1 mm diameter placed at known distances. However, some important limitations were also detected with the BrainPET prototype. In the first place, it was confirmed that there was a lack of flexibility working with an Application Specific Integrated Circuit (ASIC) whose electronic design was not own but commercial, along with the high cost required to modify an ASIC design with such features. Furthermore, the final characterization of the BrainPET ASIC showed a timing resolution with room for improvement (~ 13 ns FWHM). Taking into consideration the limitations obtained with the BrainPET prototype, along with the technological evolution in magnetically compatible devices, the knowledge acquired with the monolithic blocks were transferred to the new technology available, the SiPMs. Moreover, we opted for a new strategy in the front-end electronics, the FlexToT ASIC, an own design ASIC based on a Time over Threshold (ToT) scheme. One of the most interesting features underlying a ToT architecture is the encoding of the analog input signal amplitude information into the duration of the output signals, delivering directly digital pulses. The electronic architecture helps substitute the Analog to Digital Converters (ADCs) for Time to Digital Converters (TDCs), and they are easily implemented in Field Programmable Gate Arrays (FPGA), reducing the consumption and the complexity of the design. A new prototype demonstrator based on SiPMs was implemented to validate the FlexToT ASIC for monolithic or segmented blocks. The design and characterization of the necessary front-end electronic to read-out the signals from the ASIC was carried out by evaluating its linearity and dynamic range, its performance with an external noise signal, as well as the differential nonlinearity obtained with the TDCs implemented in the FPGA. Furthermore, the electronic presented in this work is capable of working at high count rates and discriminates different phoswich scintillators. The FlexToT ASIC provides an excellent coincidence time resolution for events that correspond to 511 keV photopeak (128 ps FWHM), resolving the limitations of the poor timing resolution of the BrainPET prototype. Furthermore, the energy resolution with monolithic blocks read by FlexToT ASICs provides an energy resolution of 15.4 % FWHM at 511 keV. Finally, good results were obtained in the quality of the PET image and the resolving power of the FlexToT demonstrator, providing spatial resolutions in the centre of the FoV at about 1.4 mm FWHM.

Quality controls for the Mu2e electromagnetic calorimeter and R&D studies for the muon capture rate determination

According to the SM, while Lepton Flavour Violation is allowed in the neutral sector, Charged Lepton Flavour Violation (CLFV) processes are forbidden. The Mu2e Experiment at Fermilab will search for the CLFV process of neutrinoless conversion of a muon into an electron within the field of an Al nucleus. The Mu2e detectors and its state-of-the-art superconducting magnetic system are presented, with special focus put to the electromagnetic crystal calorimeter. The calorimeter is composed by two annular disks, each one hosting pure CsI crystals read-out by custom silicon photomultipliers (SiPMs). The SiPMs are amplified by custom electronics (FEE) and are glued to copper holders in group of 2 SiPMs and 2 FEE boards thus forming a crystal Readout Unit. These Readout Units are being tested at the Quality Control (QC) Station, whose design, realization and operations are presented in this work. The QC Station allows to determine the gain, the response and the photon detection efficiency of each unit and to evaluate the dependence of these parameters from the supply voltage and temperature. The station is powered by two remotely-controlled power supplies and monitored thanks to a Slow Control system which is also illustrated in this work. In this thesis, we also demonstrated that the calorimeter can perform its own measurement of the Mu2e normalization factor, i.e. the counting of the 1.8 MeV photon line produced in nuclear muon captures. A specific calorimeter sub-system called CAPHRI, composed by four LYSO crystals with SiPM readout, has been designed and tested. We simulated the capability of this system on performing this task showing that it can get a faster and more reliable measurement of the muon capture rates with respect to the current Mu2e detector dedicated to this measurement. The characterization of energy resolution and response uniformity of the four procured LYSO crystals are llustrated.

Measurement of the unpolarized K+ Lambda and K+ Sigma 0 electroproduction cross-section off the proton with KAOS-spectrometer

The new stage of the Mainz Microtron, MAMI, at the Institute for Nuclear Physics of the Johannes Gutenberg-University, operational since 2007, allows open strangeness experiments to be performed. Covering the lack of electroproduction data at very low Q2, p(e,K+)Lambda and p(e,K+)Sigma0, reactions have been studied at Q^2 = 0.036(GeV/c)^2 andrnQ^2 = 0.05(GeV=c)^2 in a large angular range. Cross-section at W=1.75rnGeV will be given in angular bins and compared with the predictions of Saclay-Lyon and Kaon Maid isobaric models. We conclude that the original Kaon-Maid model, which has large longitudinal couplings of the photon to nucleon resonances, is unphysical. Extensive studies for the suitability of silicon photomultipliers as read out devices for a scintillating fiber tracking detector, with potential applications in both positive and negative arms of the spectrometer, will be presented as well.

Timing performances of a data acquisition system for time of flight PET

We are investigating the performances of a data acquisition system for Time of Flight PET, based on LYSO crystal slabs and 64 channels Silicon Photomultipliers matrices (1.2 cm2 of active area each). Measurements have been performed to test the timing capability of the detection system (SiPM matices coupled to a LYSO slab and the read-out electronics) with both test signal and radioactive source.

Conception, caractérisation et optimisation de SPAD en technologie Dalsa HV CMOS 0.8 μm pour intégration dans un 3D-SiPM

Résumé : Les photodiodes à avalanche monophotonique (SPAD) sont d'intérêts pour les applications requérant la détection de photons uniques avec une grande résolution temporelle, comme en physique des hautes énergies et en imagerie médicale. En fait, les matrices de SPAD, souvent appelés photomultiplicateurs sur silicium (SiPM), remplacent graduellement les tubes photomultiplicateurs (PMT) et les photodiodes à avalanche (APD). De plus, il y a une tendance à utiliser les matrices de SPAD en technologie CMOS afin d'obtenir des pixels intelligents optimisés pour la résolution temporelle. La fabrication de SPAD en technologie CMOS commerciale apporte plusieurs avantages par rapport aux procédés optoélectroniques comme le faible coût, la capacité de production, l'intégration d'électronique et la miniaturisation des systèmes. Cependant, le défaut principal du CMOS est le manque de flexibilité de conception au niveau de l'architecture du SPAD, causé par le caractère fixe et standardisé des étapes de fabrication en technologie CMOS. Un autre inconvénient des matrices de SPAD CMOS est la perte de surface photosensible amenée par la présence de circuits CMOS. Ce document présente la conception, la caractérisation et l'optimisation de SPAD fabriqués dans une technologie CMOS commerciale (Teledyne DALSA 0.8µm HV CMOS - TDSI CMOSP8G). Des modifications de procédé sur mesure ont été introduites en collaboration avec l'entreprise CMOS pour optimiser les SPAD tout en gardant la compatibilité CMOS. Les matrices de SPAD produites sont dédiées à être intégrées en 3D avec de l'électronique CMOS économique (TDSI) ou avec de l'électronique CMOS submicronique avancée, produisant ainsi un SiPM 3D numérique. Ce SiPM 3D innovateur vise à remplacer les PMT, les APD et les SiPM commerciaux dans les applications à haute résolution temporelle. L'objectif principal du groupe de recherche est de développer un SiPM 3D avec une résolution temporelle de 10 ps pour usage en physique des hautes énergies et en imagerie médicale. Ces applications demandent des procédés fiables avec une capacité de production certifiée, ce qui justifie la volonté de produire le SiPM 3D avec des technologies CMOS commerciales. Ce mémoire étudie la conception, la caractérisation et l'optimisation de SPAD fabriqués en technologie TDSI-CMOSP8G.

Caratterizzazione di SiPM in ambiente criogenico per il far detector di DUNE

DUNE (Deep Underground Neutrino Experiment) è un esperimento internazionale attualmente in costruzione al laboratorio Fermilab in Illinois, Stati Uniti. Il suo scopo sarà quello di studiare alcuni dei fenomeni e quesiti aperti che riguardano i neutrini: particelle debolmente interagenti facenti parte del Modello Standard. In particolare DUNE intende studiare il fenomeno dell'oscillazione di sapore dei neutrini, osservare neutrini provenienti da supernove e stelle di neutroni per studiarne la formazione e ricercare l'eventuale decadimento dei protoni. L'esperimento sarà formato da due siti sperimentali distanti circa 1300 km tra loro: il Near Detector situato a Fermilab ed il Far Detector, situato al Sanford Underground Research Facility (SURF) in South Dakota. Questa tesi è rivolta in particolare al sistema di fotorivelazione del Far Detector, che utilizza fotomoltiplicatori al silicio (Silicon Photomultipliers, o SiPM). Questi dispositivi dovranno funzionare in condizioni criogeniche in argon liquido, perciò è stata avviata un'intensiva campagna di test volta alla caratterizzazione e validazione dei sensori che saranno montati nell'apparato. La sezione INFN di Bologna è coinvolta in questa campagna e dovrà testare una parte dei SiPM destinati all'impiego in DUNE. A tale scopo è stato realizzato, nei laboratori INFN, un sistema per il test di tali dispositivi in criogenia su larga scala. L'attività di tesi ha previsto la caratterizzazione di diversi SiPM sia a temperatura ambiente sia in criogenia e l'analisi delle distribuzioni statistiche dei parametri di diversi campioni di SiPM.

One-dimensional Silicon And Germanium Nanostructures With No Carbon Analogues.

In this work we report new silicon and germanium tubular nanostructures with no corresponding stable carbon analogues. The electronic and mechanical properties of these new tubes were investigated through ab initio methods. Our results show that these structures have lower energy than their corresponding nanoribbon structures and are stable up to high temperatures (500 and 1000 K, for silicon and germanium tubes, respectively). Both tubes are semiconducting with small indirect band gaps, which can be significantly altered by both compressive and tensile strains. Large bandgap variations of almost 50% were observed for strain rates as small as 3%, suggesting their possible applications in sensor devices. They also present high Young's modulus values (0.25 and 0.15 TPa, respectively). TEM images were simulated to help in the identification of these new structures.

Influence of Annealing Heat Treatment and Cr, Mg, and Ti Alloying on the Mechanical Properties of High-Silicon Cast Iron

The influence of annealing on the mechanical properties of high-silicon cast iron for three alloys with distinct chromium levels was investigated. Each alloy was melted either with or without the addition of Ti and Mg. These changes in the chemical composition and heat treatment aimed to improve the material's mechanical properties by inhibiting the formation of large columnar crystals, netlike laminae, precipitation of coarse packs of graphite, changing the length and morphology of graphite, and rounding the extremities of the flakes to minimize the stress concentration. For alloys with 0.07 wt.% Cr, the annealing reduced the impact resistance and tensile strength due to an enhanced precipitation of refined carbides and the formation of interdendritic complex nets. Annealing the alloys containing Ti and Mg led to a decrease in the mechanical strength and an increase in the toughness. Alloys containing approximately 2 wt.% Cr achieved better mechanical properties as compared to the original alloy. However, with the addition of Ti and Mg to alloys containing 2% Cr, the chromium carbide formation was inhibited, impairing the mechanical properties. In the third alloy, with 3.5 wt.% of Cr additions, the mechanical strength improved. The annealing promoted a decrease in both hardness and amount of iron and silicon complex carbides. However, it led to a chromium carbide formation, which influenced the mechanical characteristics of the matrix of the studied material.

Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon

Single-point diamond turning of monocrystalline semiconductors is an important field of research within brittle materials machining. Monocrystalline silicon samples with a (100) orientation have been diamond turned under different cutting conditions (feed rate and depth of cut). Micro-Raman spectroscopy and atomic force microscopy have been used to assess structural alterations and surface finish of the samples diamond turned under ductile and brittle modes. It was found that silicon undergoes a phase transformation when machined in the ductile mode. This phase transformation is evidenced by the creation of an amorphous surface layer after machining which has been probed by Raman scattering. Compressive residual stresses are estimated for the machined surface and it is observed that they decrease with an increase in the feed rate and depth of cut. This behaviour has been attributed to the formation of subsurface cracks when the feed rate is higher than or equal to 2.5 mu m/rev. The surface roughness was observed to vary with the feed rate and the depth of cut. An increase in the surface roughness was influenced by microcrack formation when the feed rate reached 5.0 mu m/rev. Furthermore, a high-pressure phase transformation induced by the tool/material interaction and responsible for the ductile response of this typical brittle material is discussed based upon the presented Raman spectra. The application of this machining technology finds use for a wide range of high quality components, for example the creation of a micrometre-range channel for microfluidic devices as well as microlenses used in the infrared spectrum range.

Hyperfine interactions in silicon quantum dots

A fundamental interaction for electrons is their hyperfine interaction (HFI) with nuclear spins. HFI is well characterized in free atoms and molecules, and is crucial for purposes from chemical identification of atoms to trapped ion quantum computing. However, electron wave functions near atomic sites, therefore HFI, are often not accurately known in solids. Here we perform an all-electron calculation for conduction electrons in silicon and obtain reliable information on HFI. We verify the outstanding quantum spin coherence in Si, which is critical for fault-tolerant solid state quantum computing.

Comparative study of the adsorption and dissociation of vinylacetic acid and acrylic acid on silicon (001)

In this work, we employ the state of the art pseudopotential method, within a generalized gradient approximation to the density functional theory, to investigate the adsorption process of acrylic acid (AAc) and vinylacetic acid (VAA) on the silicon surface. Our total energy calculations support the proposed experimental process, as it indicates that the chemisorption of the molecule is as follows: The gas phase VAA (AAc) adsorbs molecularly to the electrophilic surface Si atom and then dissociates into H(2)C = CH - COO and H, bonded to the electrophilic and nucleophilic surface silicon dimer atoms, respectively. The activation energy for both processes correspond to thermal activations that are smaller than the usual growth temperature. In addition, the electronic structure, calculated vibrational modes, and theoretical scanning tunneling microscopy images are discussed, with a view to contribute to further experimental investigations.

Internal Strain Distribution in Freestanding Porous Silicon

Elastic properties of freestanding porous silicon layers fabricated by electrochemical anodization were studied by Raman scattering. Different anodization currents provided different degrees of porosity in the nanometer scale. Raman lines corresponding to the longitudinal optical phonons of crystalline and amorphous phases were observed. The amorphous volume fraction increased and the phonon frequencies for both phases decreased with increasing porosity. A strain distribution model is proposed whose fit to the experimental results indicates that the increasing nanoscale porosity causes strain relaxation in the amorphous domains and strain buildup in the crystalline ones. The present analysis has significant implications on the estimation of the crystalline Si domain's characteristic size from Raman scattering data. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3225832] All rights reserved.