Hyperfine interactions in silicon quantum dots


Autoria(s): Assali, Lucy Vitoria Credidio; Petrilli, Helena Maria; Capaz, Rodrigo Barbosa; Koiller, Belita; HU, Xuedong; SARMA, S. Das
Contribuinte(s)

UNIVERSIDADE DE SÃO PAULO

Data(s)

18/04/2012

18/04/2012

2011

Resumo

A fundamental interaction for electrons is their hyperfine interaction (HFI) with nuclear spins. HFI is well characterized in free atoms and molecules, and is crucial for purposes from chemical identification of atoms to trapped ion quantum computing. However, electron wave functions near atomic sites, therefore HFI, are often not accurately known in solids. Here we perform an all-electron calculation for conduction electrons in silicon and obtain reliable information on HFI. We verify the outstanding quantum spin coherence in Si, which is critical for fault-tolerant solid state quantum computing.

CNPq in Brazil

CAPES in Brazil

FAPESP in Brazil

(FAPERJ) Fundacao de Amparo a Pesquisa do Estado do Rio de Janeiro in Brazil

NSA/LPS through ARO[W911NF-09-1-0393]

NSA/LPS

Identificador

PHYSICAL REVIEW B, v.83, n.16, 2011

1098-0121

http://producao.usp.br/handle/BDPI/16195

10.1103/PhysRevB.83.165301

http://dx.doi.org/10.1103/PhysRevB.83.165301

Idioma(s)

eng

Publicador

AMER PHYSICAL SOC

Relação

Physical Review B

Direitos

restrictedAccess

Copyright AMER PHYSICAL SOC

Palavras-Chave #SPIN #PARAMETERS #RESONANCE #MODEL
Tipo

article

original article

publishedVersion