Hyperfine interactions in silicon quantum dots
Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
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Data(s) |
18/04/2012
18/04/2012
2011
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Resumo |
A fundamental interaction for electrons is their hyperfine interaction (HFI) with nuclear spins. HFI is well characterized in free atoms and molecules, and is crucial for purposes from chemical identification of atoms to trapped ion quantum computing. However, electron wave functions near atomic sites, therefore HFI, are often not accurately known in solids. Here we perform an all-electron calculation for conduction electrons in silicon and obtain reliable information on HFI. We verify the outstanding quantum spin coherence in Si, which is critical for fault-tolerant solid state quantum computing. CNPq in Brazil CAPES in Brazil FAPESP in Brazil (FAPERJ) Fundacao de Amparo a Pesquisa do Estado do Rio de Janeiro in Brazil NSA/LPS through ARO[W911NF-09-1-0393] NSA/LPS |
Identificador |
PHYSICAL REVIEW B, v.83, n.16, 2011 1098-0121 http://producao.usp.br/handle/BDPI/16195 10.1103/PhysRevB.83.165301 |
Idioma(s) |
eng |
Publicador |
AMER PHYSICAL SOC |
Relação |
Physical Review B |
Direitos |
restrictedAccess Copyright AMER PHYSICAL SOC |
Palavras-Chave | #SPIN #PARAMETERS #RESONANCE #MODEL |
Tipo |
article original article publishedVersion |