Properties advanced of the silicon nitride based ceramics and recent performance on automotive parts manufacture by machining process: Advanced Ceramics, demand Forecast

Automotive parts manufacture by machining process using silicon nitride-based ceramic tool development in Brazil already is a reality. Si 3N4-based ceramic cutting tools offer a high productivity due to their excellent hot hardness, which allows high cutting speeds. Under such conditions the cutting tool must be resistant to a combination of mechanical, thermal and chemical attacks. Silicon nitride based ceramic materials constitute a mature technology with a very broad base of current and potential applications. The best opportunities for Si3N 4-based ceramics include ballistic armor, composite automotive brakes, diesel particulate filters, joint replacement products and others. The goal of this work was to show latter advance in silicon nitride manufacture and its recent evolution on machining process of gray cast iron, compacted graphite iron and Ti-6Al-4V. Materials characterization and machining tests were analyzed by X-Ray Diffraction, Scanning Electron Microscopy, Vickers hardness and toughness fracture and technical norm. In recent works the authors has been proved to advance in microstructural, mechanical and physic properties control. These facts prove that silicon nitride-based ceramic has enough resistance to withstand the impacts inherent to the machining of gray cast iron (CI), compacted graphite iron (CGI) and Ti-6Al-4V (6-4). Copyright © 2008 SAE International.

Tissue response around silicon nitride implants in rabbits

The chemical and dimensional stability associated with suitable fracture toughness and propitious tribological characteristics make silicon nitride-based ceramics potential candidates for biomedical applications, mainly as orthopedic implants. Considering this combination of properties, silicon nitride components were investigated in relation to their biocompatibility. For this study, two cylindrical implants were installed in each tibia of five rabbits and were kept in the animals for 8 weeks. During the healing time, tissue tracers were administrated in the animals so as to evaluate the bone growth around the implants. Eight weeks after the surgery, the animals were euthanized and histological analyses were performed. No adverse reactions were observed close to the implant. The osteogenesis process occurred during the entire period defined by the tracers. However, this process occurred more intensely 4 weeks after the surgery. In addition, the histological analyses showed that bone growth occurred preferentially in the cortical areas. Different kinds of tissue were identified on the implant surface, characterized by lamellar bone tissue containing osteocytes and osteons, by a noncalcified matrix containing osteoblasts, or by the presence of collagen III, which may change to collagen I or remain as a fibrous tissue. The results demonstrated that silicon nitride obtained according to the procedure proposed in this research is a biocompatible material. (c) 2007 Wiley Periodicals, Inc.

Cutting forces in turning of gray cast iron using silicon nitride based cutting tool

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Development of ceramic cutting tools for future application on dry machining

Advanced ceramic materials constitute a mature technology with a very broad base of current and potential applications and a growing list of material compositions. Within the advanced ceramics category, silicon nitride based ceramics are wear-resistant, corrosion-resistant and lightweight materials, and are superior to many materials with regard to stability in high-temperature environments. Because of this combination the silicon nitride ceramics have an especially high potential to resolve a wide number of machining problems in the industries. Presently the Si3N4 ceramic cutting tool inserts are developed using additives powders that are pressed and sintered in the form of a cutting tool insert at a temperature of 1850 °C using pressureless sintering. The microstructure of the material was observed and analyzed using XRD, SEM, and the mechanical response of this array microstructure was characterized for hardness Vickers and fracture toughness. The results show that Si3N4/20 wt.% (AlN and Y 2O3) gives the best balance between hardness Vickers and fracture toughness. The Si3N4/15 wt.% (AlN and Y 2O3) composition allows the production of a very fine-grained microstructure with low decreasing of the fracture toughness and increased hardness Vickers. These ceramic cutting tools present adequate characteristics for future application on dry machining. © (2010) Trans Tech Publications.

On-chip switching of a silicon nitride micro-ring resonator based on digital microfluidics platform.

We demonstrate the switching of a silicon nitride micro ring resonator (MRR) by using digital microfluidics (DMF). Our platform allows driving micro-droplets on-chip, providing control over the effective refractive index at the vicinity of the resonator and thus facilitating the manipulation of the transmission spectrum of the MRR. The device is fabricated using a process that is compatible with high-throughput silicon fabrication techniques with buried highly doped silicon electrodes. This platform can be extended towards controlling arrays of micro optical devices using minute amounts of liquid droplets. Such an integration of DMF and optical resonators on chip can be used in variety of applications, ranging from biosensing and kinetics to tunable filtering on chip.

Characterization of porous silicon nitride/silicon oxynitride composite ceramics produced by sol infiltration

Porous silicon nitride/silicon oxynitride composite ceramics were fabricated by silica sol infiltration of aqueous gelcasting prefabricated Si3N4 green compact. Silica was introduced by infiltration to increase the green density of specimens, so suitable properties with low shrinkage of ceramics were achieved during sintering at low temperature. Si2N2O was formed through reaction between Si3N4 and silica sol at a temperature above 1550 degrees C. Si3N4/Si2N2O composite ceramics with a low linear shrinkage of 1.3-5.7%, a superior strength of 95-180 MPa and a moderate dielectric constant of 4.0-5.0 (at 21-39 GHz) were obtained by varying infiltration cycle and sintering temperature. (C) 2010 Published by Elsevier B.V.

Ultra-low friction coefficient in alumina-silicon nitride pair lubricated with water

In a ball-on-disc wear test, an alumina ceramic body sliding against a silicon nitride ceramic body in water achieved an ultra-low friction coefficient (ULFC) of 0.004. The profilometer and EDX measurements indicated that the ULFC regime in this unmated Al2O3-Si3N4 pair was achieved because of the formation of a flat and smooth interface of nanometric roughness, which favored the hydrodynamic lubrication. The triboreactions formed silicon and aluminum hydroxides which contributed to decrease roughness and shear stress at the contact interface. This behavior enables the development of low energy loss water-based tribological systems using oxide ceramics. 13 2012 Elsevier B.V. All rights reserved.

Spark Plasma Sintering of Si3N4-based Ceramics : Sintering mechanism-Tailoring microstructure-Evaluationg properties

Spark Plasma Sintering (SPS) is a promising rapid consolidation technique that allows a better understanding and manipulating of sintering kinetics and therefore makes it possible to obtain Si3N4-based ceramics with tailored microstructures, consisting of grains with either equiaxed or elongated morphology. The presence of an extra liquid phase is necessary for forming tough interlocking microstructures in Yb/Y-stabilised α-sialon by HP. The liquid is introduced by a new method, namely by increasing the O/N ratio in the general formula RExSi12-(3x+n)Al3x+nOnN16-n while keeping the cation ratios of RE, Si and Al constant. Monophasic α-sialon ceramics with tailored microstructures, consisting of either fine equiaxed or elongated grains, have been obtained by using SPS, whether or not such an extra liquid phase is involved. The three processes, namely densification, phase transformation and grain growth, which usually occur simultaneously during conventional HP consolidation of Si3N4-based ceramics, have been precisely followed and separately investigated in the SPS process. The enhanced densification is attributed to the non-equilibrium nature of the liquid phase formed during heating. The dominating mechanism during densification is the enhanced grain boundary sliding accompanied by diffusion- and/or reaction-controlled processes. The rapid grain growth is ascribed to a dynamic ripening mechanism based on the formation of a liquid phase that is grossly out of equilibrium, which in turn generates an extra chemical driving force for mass transfer. Monophasic α-sialon ceramics with interlocking microstructures exhibit improved damage tolerance. Y/Yb- stabilised monophasic α-sialon ceramics containing approximately 3 vol% liquid with refined interlocking microstructures have excellent thermal-shock resistance, comparable to the best β-sialon ceramics with 20 vol% additional liquid phase prepared by HP. The obtained sialon ceramics with fine-grained microstructure show formidably improved superplasticity in the presence of an electric field. The compressive strain rate reaches the order of 10-2 s-1 at temperatures above 1500oC, that is, two orders of magnitude higher than that has been realised so far by any other conventional approaches. The high deformation rate recorded in this work opens up possibilities for making ceramic components with complex shapes through super-plastic forming.

All-chemical vapor deposited graphene/silicon nitride TFTs

All-chemical vapor deposited silicon nitride / monolayer graphene TFTs have been fabricated. Polychromatic Raman spectroscopy shows high quality monolayer graphene channels with uniform coverage and significant interfacial doping at the source-drain contacts. Nominal mobilities of approximately 1900 cm 2V-1s-1 have been measured opening up a potentially useful platform for analogue and RFR-based applications fabricated through allchemical vapor deposition processes. © The Electrochemical Society.

Sintering of nanopowders of amorphous silicon nitride under ultrahigh pressure

Nanopowders of amorphous silicon nitride were densified and sintered without additives under ultrahigh pressure (1.0-5.0 GPa) between room temperature and 1600 degrees C. The powders had a mean diameter of 18 nm and contained similar to 5.0 wt% oxygen that came from air-exposure oxidation, Sintering results at different temperatures were characterized in terms of sintering density, hardness, phase structure, and grain size. It was observed that the nanopowders can be pressed to a high density (87%) even at room temperature under the high pressure. Bulk Si3N4 amorphous and crystalline ceramics (relative density: 95-98%) were obtained at temperatures slightly below the onset of crystallization (1000-1100 degrees C and above 1420 degrees C, respectively. Rapid grain growth occurred during the crystallization leading to a grain size (>160 nm) almost 1 order of magnitude greater than the starting particulate diameters, With the rise of sintering temperature, a final density was reached between 1350 and 1420 degrees C, which seemed to be independent of the pressure applied (1.0-5.0 GPa), The densification temperature observed under the high pressure is lower by 580 degrees C than that by hot isostatic pressing sintering, suggesting a significantly enhanced low-temperature sintering of the nanopowders under a high external pressure.

Enhanced crystallization and phase transformation of amorphous silicon nitride under high pressure

The crystallization and phase transformation of amorphous Si3N4 ceramics under high pressure (1.0-5.0 GPa) between 800 and 1700 degreesC were investigated. A greatly enhanced crystallization and alpha-beta transformation of the amorphous Si3N4 ceramics were evident under the high pressure, as characterized by that, at 5.0 GPa, the amorphous Si3N4, began to crystallize at a temperature as low as 1000 degreesC (to transform to alpha modification). The subsequent alpha-beta transformation occurred completed between 1350 and 1420 degreesC after only 20 min of pressing at 5.0 GPa. In contrast, under 0.1 MPa N-2, the identical amorphous materials were stable up to 1400 degreesC without detectable crystallization, and only a small amount of a phase was detected at 1500 degreesC. The crystallization temperature and the alpha-beta transformation temperatures are reduced by 200-350 degreesC compared to that at normal pressure. The enhanced phase transformations of the amorphous Si3N4, were discussed on the basis of thermodynamic and kinetic consideration of the effects of pressure on nucleation and growth.

Bone growth around silicon nitride implants - An evaluation by scanning electron microscopy

Silicon nitride has demonstrated to be a potential candidate for clinical applications because it is a non-cytotoxic material and has satisfactory fracture toughness, high wear resistance and low friction coefficient. In this paper, samples of silicon nitride, which were kept into rabbits` tibias for 8 weeks, and the adjacentbone tissue were analysed by scanning electron microscopy in order to verify the bone growth around the implants and the interaction between the implant and the bone. Bone growth occurred mainly in the cortical areas, although it has been observed that the newly bone tends to grow toward the marrow cavity. Differences were observed between the implants installed into distal and proximal regions. In the first region, where the distance between the implant and the cortical bone is greater than in the proximal region, the osteoconduction process was evidenced by the presence of a bridge bone formation toward the implant surface. The results showed that silicon nitride can be used as biomaterial since the newly bone grew around the implants. (c) 2007 Elsevier Inc. All rights reserved.

Influence of the substitution of Y2O3 for CeO2 on the mechanical and microstructural properties of silicon nitride

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effect of reaction mechanism on precursor exposure time in atomic layer deposition of silicon oxide and silicon nitride

Atomic layer deposition (ALD) of highly conformal, silicon-based dielectric thin films has become necessary because of the continuing decrease in feature size in microelectronic devices. The ALD of oxides and nitrides is usually thought to be mechanistically similar, but plasma-enhanced ALD of silicon nitride is found to be problematic, while that of silicon oxide is straightforward. To find why, the ALD of silicon nitride and silicon oxide dielectric films was studied by applying ab initio methods to theoretical models for proposed surface reaction mechanisms. The thermodynamic energies for the elimination of functional groups from different silicon precursors reacting with simple model molecules were calculated using density functional theory (DFT), explaining the lower reactivity of precursors toward the deposition of silicon nitride relative to silicon oxide seen in experiments, but not explaining the trends between precursors. Using more realistic cluster models of amine and hydroxyl covered surfaces, the structures and energies were calculated of reaction pathways for chemisorption of different silicon precursors via functional group elimination, with more success. DFT calculations identified the initial physisorption step as crucial toward deposition and this step was thus used to predict the ALD reactivity of a range of amino-silane precursors, yielding good agreement with experiment. The retention of hydrogen within silicon nitride films but not in silicon oxide observed in FTIR spectra was accounted for by the theoretical calculations and helped verify the application of the model.