Safety compliance test program: FMVSS 212, 219, 301-75, NCAP, Accident Investigation Division data. Final report.

National Highway Traffic Safety Administration, Office of Research and Development, Washington, D.C.

Memory and Gender in Medieval Europe 900-1200

Review of Memory and Gender in Medieval Europe, 900-1200 by Elizabeth van Houts (Toronto UP, 1999).

Takuueläkettä sai huhtikuussa 87 900 eläkeläistä

Kela alkoi maksaa takuueläkettä 1.3.2011. Takuueläke korotti Suomessa asuvan vähimmäiseläkkeen 687,74 euroon. Huhtikuussa takuueläkkeen saajia oli 87 900.

Electrochemical Properties of Li3N Dissolved in Molten LiCl at 900 K

Thermodynamic properties of Li3N dissolved in the molten LiCl salt at 900 K were explored using electrochemical methods. It was difficult to determine precisely the decomposition voltage of Li3N dissolved in the molten salt by cyclic voltammetry. The oxidation wave of N3– ion could not be located with high accuracy. However, the lithium activity of the Pb-Li alloy in equilibrium with the molten salt containing dissolved Li3N under nitrogen atmosphere could be measured electrochemically with high accuracy using the Li/Li + reference electrode. Under the conditions used in this study, the potential of the Li-Pb electrode is equal to the decomposition voltage of Li3N. The activity of Li3N in molten LiCl was determined for anionic fractions of N3– ranging from xN3– = 10–4 to 0.028. The nitride ion concentration in the salt was determined by chemical titration. The activity coefficient of the Li3N at high dilution was found to be very low, around 10–4. The activity coefficient increases sharply with composition and has a value of 0.25 at xN3– = 0.028. ©2001 The Electrochemical Society. All rights reserved.

On the unramified principal series of GL(3) over non-archimedean local fields

Let F be a non-archimedean local field and let O be its ring of integers. We give a complete description of the irreducible constituents of the restriction of the unramified principal series representations of GL(3)(F) to GL(3)(O). (C) 2013 Elsevier Inc. All rights reserved.

Arte e industria. Influencia de las formas industriales en el arte del siglo XX (1.900-1.945)

533 p. : il.

Overcoat dependence of laser-induced damage threshold of 355 nm HR coatings

A series of HR coatings, with and without overcoat, were prepared by electron beam evaporation using the same deposition process. The laser-induced damage threshold (LIDT) was measured by a 355 nm Nd:YAG laser with a pulse width of 8 ns. Damage morphologies of samples were observed by Leica-DMRXE Microscope. The stress was measured by viewing the substrate deformation before and after coatings deposition using an optical interferometer. Reflectance of the samples was measured by Lambda 900 Spectrometer. The theoretical results of electric field distributions of the samples were calculate by thin film design software (TFCalc). It was found that SiO2 overcoat had improved the LIDT greatly, while MgF2 overcoat had little effect on the LIDT because of its high stress in the HR coatings. The damage morphologies were different among HR coatings with and without overcoats. (c) 2005 Elsevier B.V. All rights reserved.

A Fully Integrated 900-MHz Passive RFID Transponder Front End With Novel Zero-Threshold RF-DC Rectifier

This paper presents a fully integrated CMOS analog front end for a passive 900-MHz radio-frequency identification (RFID) transponder. The power supply in this front end is generated from the received RF electromagnetic energy by using an RF-dc voltage rectifier. In order to improve the compatibility with standard CMOS technology, Schottky diodes in conventional RF-dc rectifiers are replaced by diode-connected MOS transistors with zero threshold. Meanwhile, theoretical analyses for the proposed rectifier are provided and verified by both simulation and measurement results. The design considerations of the pulsewidth-modulation (PWM) demodulator and the backscatter modulator in the front end are also discussed for low-power applications. The proposed front end is implemented in a 0.35-mu m 2P4M CMOS technology. The whole chip occupies a die area of 490 x 780 mu m(2) and consumes only 2.1 mu W in reading mode under a self-generated 1.5-V supply voltage. The measurement results show that the proposed rectifier can properly operate with a - 14.7-dBm input RF power at a power conversion efficiency of 13.0%. In the proposed RFID applications, this sensitivity corresponds to 10.88-m communication distance at 4-W equivalent isotropically radiated power from a reader base station.

Investigation of oxygen vacancy and interstitial oxygen defects in ZnO films by photoluminescence and x-ray photoelectron spectroscopy

ZnO films prepared at different temperatures and annealed at 900 degrees C in oxygen are studied by photoluminescence (PL) and x-ray photoelection spectroscopy (XPS). It is observed that in the PL of the as-grown films the green luminescence (GL) and the yellow luminescence (YL) are related, and after annealing the GL is restrained and the YL is enhanced. The O 1s XPS results also show the coexistence of oxygen vacancy (Vo) and interstitial oxygen (O-i) before annealing and the quenching of the V-o after annealing. By combining the two results it is deduced that the GL and YL are related to the V-o and O-i defects, respectively.

Microstructure and photoluminescence of a-SiOx : H

Two strong photoluminescence (PL) bands in the spectral range of 550-900 nm have been observed at room temperature from a series of a-SiOx:H films fabricated by plasma-enhanced chemical vapor deposition (PECVD) technique. One is composed of a main band in the red-light region and a shoulder; the other is located at about 850 nm, only found after 1170 degrees C annealing in N-2 atmosphere. In conjunction with infrared (IR) and micro-Raman spectra, it is thought that the two PL bands are associated with a-Si clusters in the SiOx network and nanocrystalline silicon in SiO2, respectively.

Strong visible photoluminescence from amorphous silicon grains in a-SiOx:H films

Two strong luminescence bands were observed from a-SiOx:H in the spectral range of 550-900 nm at room temperature. One is a main broad peak which blueshifts with oxygen content and the other is a shoulder fixed at about 835 nm. In conjunction with TR and micro-Raman spectra, we have proposed that the main band may originate from the amorphous silicon grains embedded in SiOx network, while the shoulder might be due to some defects induced by excess-silicon in these films. (C) 1997 Elsevier Science Ltd.