THEORY OF NON-STEADY-STATE ELECTRICAL CHARACTERISTICS OF METAL-INSULATOR-METAL STRUCTURES WITH SCHOTTKY BARRIERS AND UNIFORMLY DISTRIBUTED INTERFACE IMPURITY STATES

The metal-insulator (or amorphous semiconductor) blocking contact is still not well understood. In the present paper, we discuss the non steady state characteristics of Metal-lnsulator-Metal Structure with non-intimate blocking contacts (i.e. Metal-Oxide-Insulator-Metal Structure). We consider a uniform distribution (in energy) of impurity states in addition to impurity states at a single energy level within the depletion region. We discuss thermal as well as isothermal characteristics and present expressions for the temperature of maximum current (T-m) and a method to calculate the density of uniformly distributed impurity states. The variation of mobility with electrical field has also been considered. Finally we plot the theoretical curves under different conditions. The present results are closing into available experimental results.

Theory of non-steady state electrical characteristics of metal-insulator-metal structures with schottky barriers and exponentially distributed impurity states

We discuss non-steady state electrical characteristics of a metal-insulator-metal structure. We consider an exponential distribution (in energy) of impurity states in addition to impurity states at a single energy level within the depletion region. We discuss thermal as well as isothermal characteristics and present an expression for the temperature of maximum current (Tm) and a method to calculate the density of exponentially distributed impurity states. We plot the theoretical curves for various sets of parameters and the variation of Tm, and Im (maximum current) with applied potential for various impurity distributions. The present model can explain the available experimental results. Finally we compare the non-steady state characteristics in three cases: (i) impurity states only at a single energy level, (ii) uniform energetic distribution of impurity states, and (iii) exponential energetic distribution of impurity states.

Centrifugal pump transient characteristics and analysis using the method of characteristics

A theoretical and experimental study has been carried out on the transient characteristics of a centrifugal pump during starting and stopping periods. Experiments have been conducted on a volute pump with different valve openings to study the dynamic behaviour of the pump during normal start up and stopping, when a small length of discharge pipe line is connected to discharge flange of the pump. Similar experiments have also been conducted when the test pump was part of a hydraulic system to study the system effect on the transient characteristics. Instantaneous rotational speed, flowrate, and delivery and suction pressures of the pump are recorded and it is observed in ail the tested cases that the change of pump behaviour during the transient period is quasi-steady. The dynamic characteristics of the pump have been analysed by a numerical model using the method of characteristics. The model is presented and the results are compared with the experimental data. As the model contains speed acceleration and unsteady discharge terms, the model can be applied for analyses of purely unsteady cases where the pump dynamic characteristics show considerable departure from their steady-state characteristics.

Steady-state analytical model for the trench insulated gate bipolar transistor

A steady-state, physically-based analytical model for the Trench Insulated Gate Bipolar Transistor which accounts for a combined PIN diode - PNP transistor carrier dynamics is proposed. Previous models (i.e. PIN model and PNP transistor model) cannot account properly for the carrier dynamics in Trench IGBT since neither the PNP transistor nor the PIN diode effect can be neglected. An optimized Trench IGBT with a large ratio between the accumulation layer and the cell size leads to substantially improved on-state characteristics, which makes the Trench IGBT potentially the most attractive device in the area of high voltage fast switching devices.

Influence of open-tube Ga diffusion on the characteristics for thyristor

Open-tube Ga diffusion into a SiO2/Si structure was used for fabrication of the high speed thyristor. The advantages of open-tube Ga diffusion are as follows; it is easier to operate and easier to control the profile of the Ga concentration during processing, a clean surface, which is free from alloy spots can be obtained, this technique ensures to improve the on-state characteristics and dynamic characteristics.

THEORY OF ELECTRICAL CHARACTERISTICS OF A SCHOTTKY-BARRIER HAVING EXPONENTIALLY DISTRIBUTED IMPURITY STATES AND METAL-INSULATOR METAL STRUCTURES

The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, we discuss the steady state characteristics of a non-intimate metal-insulator Schottky barrier. We consider an exponential distribution (in energy) of impurity states in addition to impurity states at a single energy level within the depletion region. We present analytical expressions for the electrical potential, field, thickness of depletion region, capacitance, and charge accumulated in the depletion region. We also discuss ln I versus V(ap) data. Finally, we compare the characteristics in three cases: (i) impurity states at only a single energy level; (ii) uniform energy distribution of impurity states; and (iii) exponential energy distribution of impurity states.In general, the electrical characteristics of Schottky barriers and metal-insulator-metal structures with Schottky barriers depend strongly on the energy distribution of impurity states.

Theory of electrical characteristics for metal-oxide-insulator Schottky barrier and metal-insulator-metal structures

The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, the intimate metal-insulator and metal-oxide-insulator contact are discussed. Further, the steady-state characteristics of metal-oxide-insulator-metal structures are also discussed. Oxide is an insulator with wider energy band gap (about 50 Å thick). A uniform energetic distribution of impurities is considered in addition to impurities at a single energy level inside the surface charge region at the oxide-insulator interface. Analytical expressions are presented for electrical potential, field, thickness of the depletion region, capacitance, and charge accumulated in the surface charge region. The electrical characteristics are compared with reference to relative densities of two types of impurities. ln I is proportional to the square root of applied potential if energetically distributed impurities are relatively important. However, distribution of the electrical potential is quite complicated. In general energetically distributed impurities can considerably change the electrical characteristics of these structures.

Pt(II) bipyridyl complexes bearing substituted fluorenyl motif on the bipyridyl and acetylide ligands : synthesis, photophysics, and reverse saturable absorption

A series of Pt(II) diimine complexes bearing benzothiazolylfluorenyl (BTZ-F8), diphenylaminofluorenyl (NPh2- F8), or naphthalimidylfluorenyl (NI-F8) motifs on the bipyridyl or acetylide ligands (Pt-4−Pt-8), (i.e., {4,4′-bis[7-R1-F8-(≡)n-]bpy}Pt(7- R2-F8- ≡ -)2, where F8 = 9,9′-di(2-ethylhexyl)fluorene, bpy = 2,2′- bipyridine, Pt-4: R1 = R2 = BTZ, n = 0; Pt-5: R1 = BTZ, R2 = NI, n = 0; Pt-6: R1 = R2 = BTZ, n = 1; Pt-7: R1 = BTZ, R2 = NPh2, n = 1; Pt- 8: R1 = NPh2, R2 = BTZ, n = 1) were synthesized. Their ground-state and excited-state properties and reverse saturable absorption performances were systematically investigated. The influence of these motifs on the photophysics of the complexes was investigated by spectroscopic methods and simulated by time-dependent density functional theory (TDDFT). The intense absorption bands below 410 nm for these complexes is assigned to predominantly 1π,π* transitions localized on either the bipyridine or the acetylide ligands; while the broad low-energy absorption bands between 420 and 575 nm are attributed to essentially 1MLCT (metal-to-ligand charge transfer)/ 1LLCT (ligand-to-ligand charge transfer) transitions, likely mixed with some 1ILCT (intraligand charge transfer) transition for Pt-4−Pt-7, and predominantly 1ILCT transition admixing with minor 1MLCT/1LLCT characters for Pt-8. The different substituents on the acetylide and bipyridyl ligands, and the degrees of π-conjugation in the bipyridyl ligand influence both the 1π,π* and charge transfer transitions pronouncedly. All complexes are emissive at room temperature. Upon excitation at their respective absorption band maxima, Pt-4, Pt-6, and Pt-8 exhibit acetylide ligand localized 1π,π* fluorescence and 3MLCT/3LLCT phosphorescence in CH2Cl2, while Pt-5 manifests 1ILCT fluorescence and 3ILCT phosphorescence. However, only 1LLCT fluorescence was observed for Pt-7 at room temperature. The nanosecond transient absorption study was carried out for Pt-4−Pt-8 in CH3CN. Except for Pt-7 that contains NPh2 at the acetylide ligands, Pt-4−Pt-6 and Pt-8 all exhibit weak to moderate excited-state absorption in the visible spectral region. Reverse saturable absorption (RSA) of these complexes was demonstrated at 532 nm using 4.1 ns laser pulses in a 2 mm cuvette. The strength of RSA follows this trend: Pt-4 > Pt-5 > Pt-7 > Pt-6 > Pt-8. Incorporation of electron-donating substituent NPh2 on the bipyridyl ligand significantly decreases the RSA, while shorter π-conjugation in the bipyridyl ligand increases the RSA. Therefore, the substituent at either the acetylide ligands or the bipyridyl ligand could affect the singlet and triplet excited-state characteristics significantly, which strongly influences the RSA efficiency.

Performance of inherently compensated flat pad aerostatic bearings subject to dynamic perturbation forces

The importance of air bearing design is growing in engineering. As the trend to precision and ultra precision manufacture gains pace and the drive to higher quality and more reliable products continues, the advantages which can be gained from applying aerostatic bearings to machine tools, instrumentation and test rigs is becoming more apparent. The inlet restrictor design is significant for air bearings because it affects the static and dynamic performance of the air bearing. For instance pocketed orifice bearings give higher load capacity as compared to inherently compensated orifice type bearings, however inherently compensated orifices, also known as laminar flow restrictors are known to give highly stable air bearing systems (less prone to pneumatic hammer) as compared to pocketed orifice air bearing systems. However, they are not commonly used because of the difficulties encountered in manufacturing and assembly of the orifice designs. This paper aims to analyse the static and dynamic characteristics of inherently compensated orifice based flat pad air bearing system. Based on Reynolds equation and mass conservation equation for incompressible flow, the steady state characteristics are studied while the dynamic state characteristics are performed in a similar manner however, using the above equations for compressible flow. Steady state experiments were also performed for a single orifice air bearing and the results are compared to that obtained from theoretical studies. A technique to ease the assembly of orifices with the air bearing plate has also been discussed so as to make the manufacturing of the inherently compensated bearings more commercially viable. (c) 2012 Elsevier Inc. All rights reserved.

Switching aspects of hybrid semiconductor power devices

A hybrid semiconductor power device has been designed which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between an IGBT and a thyristor mode of operation. This paper discusses aspects of the switching behaviour of this and of similar devices. Simulation results of an example structure are presented and conceivable developments in the switching characteristics of hybrid devices are discussed.

Single-gated multiple-mode power semiconductor devices

A new method has been used to design a power semiconductor device which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between the IGBT and thyristor modes of operation. This paper discusses single-gated devices with multiple modes and aspects of their switching behaviour.

Switching aspects of hybrid semiconductor power devices

A hybrid semiconductor power device has been designed which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between an IGBT and a thyristor mode of operation. This paper discusses aspects of the switching behaviour of this and of similar devices. Simulation results of an example structure are presented and conceivable developments in the switching characteristics of hybrid devices are discussed.

Protoporphyrin IX Nanoparticle Carrier: Preparation, Optical Properties, and Singlet Oxygen Generation

The present study is focused on developing a nanoparticle carrier for the photosensitizer protoporphyrin IX for use in photodynamic therapy. The entrapment of protoporphyrin IX (Pp IX) in silica spheres was achieved by modification of Pp IX molecules with an organosilane reagent. The immobilized drug preserved its optical properties and the capacity to generate singlet oxygen, which was detected by a direct method from its characteristic phosphorescence decay curve at near-infrared and by a chemical method using 1,3-diphenylisobenzofuran to trap singlet oxygen. The lifetime of singlet oxygen when a suspension of Pp IX-loaded particles in acetonitrile was excited at 532 nm was determined as 52 mu s, which is in good agreement with the value determined for methylene blue in acetonitrile solution under the same conditions. The Pp IX-loaded silica particles have an efficiency of singlet oxygen generation (eta Delta) higher than the quantum yield of free porphyrins. This high efficiency of singlet oxygen generation was attributed to changes on the monomer-dimer equilibrium after photosentisizer immobilization.

A localização da indústria de transformação brasileira nas últimas três décadas

O propósito dessa dissertação é avaliar, numa perspectiva geográfica, os setores industriais no Brasil nas últimas três décadas. Numa primeira instância, o objetivo é verificar o nível de especialização e concentração dos estados brasileiros em termos industriais, utilizando-se os índices de Krugman e Gini, respectivamente. Com os resultados desses dois índices, os estados brasileiros são separados em quatro grupos, segundo o método de grupamento de médias K. Através de um produto interno usual entre o vetor da distribuição da produção industrial dos setores nos estados e vetores de algumas características desses setores (chamado de Viés das Características da Indústria - VCI), verifica-se em que tipos de indústrias os estados estão se especializando e/ou concentrando. Uma análise multivariada de componentes principais é feita com os VCI’s, na qual esses componentes principais são usados para verificar a similaridade dos estados. Sob outra perspectiva, busca-se investigar o nível de concentração geográfico dos setores industriais brasileiros. Para tanto, utilizaram-se o índice Gini e o índice de Venables. Nesse último, a distância entre os estados não é negligenciada para mensuração da concentração. Os setores industriais são separados em três grupos pelo método de grupamento de médias K, no qual as variáveis utilizadas são os componentes principais das características das indústrias. Utilizando outro produto interno, o Viés da Característica dos Estados (VCE), observa-se em que tipo de estados os setores industriais estão se concentrando ou não. Para visualizar como essas duas perspectivas, ou seja, como as características dos estados e das indústrias influenciam a localização dos setores industriais no território brasileiro, um modelo econométrico de dados cruzados de Midelfart-Knarvik e outros (2000) é estabelecido para o caso brasileiro. Neste modelo econométrico, é possível investigar como a interação das características das indústrias e dos estados podem determinar onde a indústria se localiza. Os principais resultados mostram que os fortes investimentos em infraestrutura na década de 70 e a abertura comercial na década de 90 foram marcantes para localização da indústria brasileira.

Caracterização agronômica e divergência genética de acessos de cártamo

Pós-graduação em Agronomia (Agricultura) - FCA