Nonlinear transport in semiconducting polymers at high carrier densities

Conducting and semiconducting polymers are important materials in the development of printed, flexible, large-area electronics such as flat-panel displays and photovoltaic cells. There has been rapid progress in developing conjugated polymers with high transport mobility required for high-performance field-effect transistors (FETs), beginning(1) with mobilities around 10(-4) cm(2) V-1 s(-1) to a recent report(2) of 1 cm(2) V-1 s(-1) for poly(2,5-bis(3-tetradecylthiophen-2-yl) thieno[3,2-b] thiophene) (PBTTT). Here, the electrical properties of PBTTT are studied at high charge densities both as the semiconductor layer in FETs and in electrochemically doped films to determine the transport mechanism. We show that data obtained using a wide range of parameters (temperature, gate-induced carrier density, source-drain voltage and doping level) scale onto the universal curve predicted for transport in the Luttinger liquid description of the one-dimensional `metal'.

Direct estimate of transport length scales in semiconducting polymers

A method for determining the electron/hole transport length scale of model semiconducting polymer systems by scanning a narrow-light probe beam over the nonoverlapping anode/cathode region in asymmetric sandwich device structures is presented (see figure). Electron versus hole collection efficacy, and disorder and spatial anisotropy in the electrical transport parameters can be estimated.

HYBRID PHOTOVOLTAIC DEVICES BASED ON ORGANIC SEMICONDUCTING POLYMERS AND INORGANIC NANOSTRUCTURED ELECTRODES

La fotovoltaica orgánica es una tecnología solar emergente que todavía no ha entrado en el mercado. El objetivo de esta tesis ha sido acercar un poco más la industrialización de dicha tecnología mediante el incremento de la eficiencia y la durabilidad de estos dispositivos solares. Para la consecución de dicho objetivo se identificaron las limitaciones existentes y se diseñó una hora de ruta con diversas estrategias para poder superar cada uno de los problemas. Así, mediante un exhaustivo control de la nano morfología del film fotoactivo y la introducción de electrodos nanoestructurados se ha conseguido incrementar la eficiencia. La sustitución de los electrodos estándares por nuevos electrodos basados en óxidos metálicos confiere durabilidad al sistema. Por último, la sustitución del óxido de indio y estaño como electrodo transparente por nanohilos metálicos de plata habilita la posibilidad de fabricar dispositivos solares flexibles de bajo coste.

Fabrication of an organic field effect transistor using nano imprinting of Ag inks and semiconducting polymers

A simple and cheap procedure for flexible electronics fabrication was demonstrated by imprinting metallic nanoparticles (NPs) on flexible substrates. Silver NPs with an average diameter of 10 nm were prepared via an improved chemical approach and Ag Np ink was produced in α-terpineol with a concentration up to 15%. Silver micro/nanostructures with a dimension varying from nanometres to microns were produced on a flexible substrate (polyimide) by imprinting the as-prepared silver ink. The fine fluidic properties of an Ag NP/α-terpineol solution and low melting temperatures of silver nanoparticles render a low pressure and low temperature procedure, which is well suited for flexible electronics fabrication. The effects of sintering and mechanical bending on the conductivity of imprinted silver contacts were also investigated. Large area organic field effect transistors (OFET) on flexible substrates were fabricated using an imprinted silver electrode and semiconducting polymer. The OFET with silver electrodes imprinted from our prepared oleic acid stabilized Ag nanoparticle ink show an ideal ohmic contact; therefore, the OFET exhibit high performance (Ion/Ioff ratio: 1 × 103; mobility: 0.071 cm2 V-1 s-1). © 2010 IOP Publishing Ltd.

Phase transfer catalysts drive diverse organic solvent solubility of single-walled carbon nanotubes helically wrapped by ionic, semiconducting polymers.

Use of phase transfer catalysts such as 18-crown-6 enables ionic, linear conjugated poly[2,6-{1,5-bis(3-propoxysulfonicacidsodiumsalt)}naphthylene]ethynylene (PNES) to efficiently disperse single-walled carbon nanotubes (SWNTs) in multiple organic solvents under standard ultrasonication methods. Steady-state electronic absorption spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy (TEM) reveal that these SWNT suspensions are composed almost exclusively of individualized tubes. High-resolution TEM and AFM data show that the interaction of PNES with SWNTs in both protic and aprotic organic solvents provides a self-assembled superstructure in which a PNES monolayer helically wraps the nanotube surface with periodic and constant morphology (observed helical pitch length = 10 ± 2 nm); time-dependent examination of these suspensions indicates that these structures persist in solution over periods that span at least several months. Pump-probe transient absorption spectroscopy reveals that the excited state lifetimes and exciton binding energies of these well-defined nanotube-semiconducting polymer hybrid structures remain unchanged relative to analogous benchmark data acquired previously for standard sodium dodecylsulfate (SDS)-SWNT suspensions, regardless of solvent. These results demonstrate that the use of phase transfer catalysts with ionic semiconducting polymers that helically wrap SWNTs provide well-defined structures that solubulize SWNTs in a wide range of organic solvents while preserving critical nanotube semiconducting and conducting properties.

Schottky barriers to semiconducting polymers

Schottky barrier diodes are made from virtually all semiconducting polymers. Application of Schottky barriers on the development of electronic devices built from semiconducting polymers prompted this research. The article investigated the dc and ac admittance of Schottky barrier which occur at the interface between aluminum and poly(3-methyl thiophene) made ready by electropolymerisation. The experiment revealed that the interfacial layers occurring in polymer Schottky barriers is significant in the response of the controlling device.

Electrical characterization of semiconducting polymers

Schottky diodes resulting from an intimate contact of aluminum on electrodeposited poly(3-methylthiopene) were studied by admittance spectroscopy, capacitance-voltage measurements and voltaic and optically-induced current and capacitance transients. The loss tangents show the existence of interface states that can be removed by vacuum annealing. Furthermore, the C-V curves contradict the idea of movement of the dopant ions.

Schottky barrier diodes from semiconducting polymers

Schottky barrier diodes based on Al/poly(3-methylthiophene)/Au have been fabricated and their electrical behaviour investigated. I-V characteristics revealed a dependence on the fabrication conditions, specifically on the time under vacuum prior to evaporation of the rectifying contact and post-metal annealing at elevated temperature. The available evidence is consistent with the formation of a thin insulating layer between the metal and the polymer following these procedures. Long periods under vacuum prior to deposition of the aluminium electrode reduced the likelihood of such a layer forming. Capacitance-voltage plots of the devices were stable to voltage cycling, so long as the forward voltage did not exceed similar to 1 V. Above this a small degree of hysteresis was observed, which is attributed to the filling/emptying of interface states or traps in the polymer.

Schottky barriers to semiconducting polymers

Schottky barrier diodes are made from virtually all semiconducting polymers. Application of Schottky barriers on the development of electronic devices built from semiconducting polymers prompted this research. The article investigated the dc and ac admittance of Schottky barrier which occur at the interface between aluminum and poly(3-methyl thiophene) made ready by electropolymerisation. The experiment revealed that the interfacial layers occurring in polymer Schottky barriers is significant in the response of the controlling device.

Electrical characterization of semiconducting polymers

Schottky diodes resulting from an intimate contact of aluminum on electrodeposited poly(3-methylthiopene) were studied by admittance spectroscopy, capacitance-voltage measurements and voltaic and optically-induced current and capacitance transients. The loss tangents show the existence of interface states that can be removed by vacuum annealing. Furthermore, the C-V curves contradict the idea of movement of the dopant ions.

Schottky barrier diodes from semiconducting polymers

Schottky barrier diodes based on Al/poly(3-methylthiophene)/Au have been fabricated and their electrical behaviour investigated. I-V characteristics revealed a dependence on the fabrication conditions, specifically on the time under vacuum prior to evaporation of the rectifying contact and post-metal annealing at elevated temperature. The available evidence is consistent with the formation of a thin insulating layer between the metal and the polymer following these procedures. Long periods under vacuum prior to deposition of the aluminium electrode reduced the likelihood of such a layer forming. Capacitance-voltage plots of the devices were stable to voltage cycling, so long as the forward voltage did not exceed similar to 1 V. Above this a small degree of hysteresis was observed, which is attributed to the filling/emptying of interface states or traps in the polymer.

Strong carrier lifetime enhancement in GaAs nanowires coated with semiconducting polymer.

The ultrafast charge carrier dynamics in GaAs/conjugated polymer type II heterojunctions are investigated using time-resolved photoluminescence spectroscopy at 10 K. By probing the photoluminescence at the band edge of GaAs, we observe strong carrier lifetime enhancement for nanowires blended with semiconducting polymers. The enhancement is found to depend crucially on the ionization potential of the polymers with respect to the Fermi energy level at the surface of the GaAs nanowires. We attribute these effects to electron doping by the polymer which reduces the unsaturated surface-state density in GaAs. We find that when the surface of nanowires is terminated by native oxide, the electron injection across the interface is greatly reduced and such surface doping is absent. Our results suggest that surface engineering via π-conjugated polymers can substantially improve the carrier lifetime in nanowire hybrid heterojunctions with applications in photovoltaics and nanoscale photodetectors.

Interface morphology snapshots of vertically segregated thin films of semiconducting polymer/polystyrene blends

We present atomic force microscopic images of the interphase morphology of vertically segregated thin films spin coated from two-component mixtures of poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene-vinylene] (MEH-PPV) and polystyrene (PS). We investigate the mechanism leading to the formation of wetting layers and lateral structures during spin coating using different PS molecular weights, solvents and blend compositions. Spinodal decomposition competes with the formation of surface enrichment layers. The spinodal wavelength as a function of PS molecular weight follows a power-law similar to bulk-like spinodal decomposition. Our experimental results indicate that length scales of interface topographical features can be adjusted from the nanometer to micrometer range. The importance of controlled arrangement of semiconducting polymers in thin film geometries for organic optoelectronic device applications is discussed. (c) 2007 Elsevier Ltd. All rights reserved.

Electron-accepting conjugated materials based on 2-Vinyl-4,5- dicyanoimidazoles for application in organic electronics

We report the Heck coupling of 2-vinyl-4,5-dicyanoimidazole (vinazene) with selected di- and trihalo aromatics in an effort to prepare linear and branched electron-accepting conjugated materials for application in organic electronics. By selecting the suitable halo-aromatic moiety, it is possible to tune the HOMO - LUMO energy levels, absorption, and emission properties for a specific application. In this regard, materials with strong photoluminescence from blue → green → red are reported that may have potential application in organic light-emitting diodes (OLEDs). Furthermore, derivatives with strong absorption in the visible spectrum, coupled with favorable HOMO-LUMO levels, have been used to prepare promising organic photovoltaic devices (OPVs) when combined with commercially available semiconducting donor polymers.