Schottky barriers to semiconducting polymers


Autoria(s): Taylor, D. M.; Gomes, Henrique L.
Data(s)

26/06/2015

26/06/2015

1994

Resumo

Schottky barrier diodes are made from virtually all semiconducting polymers. Application of Schottky barriers on the development of electronic devices built from semiconducting polymers prompted this research. The article investigated the dc and ac admittance of Schottky barrier which occur at the interface between aluminum and poly(3-methyl thiophene) made ready by electropolymerisation. The experiment revealed that the interfacial layers occurring in polymer Schottky barriers is significant in the response of the controlling device.

Identificador

0963-3308

AUT: HGO00803;

http://hdl.handle.net/10400.1/6614

https://dx.doi.org/ 10.1049/ip-cds:19971003

Idioma(s)

eng

Publicador

IET

Relação

P-008-W1D

Direitos

restrictedAccess

Tipo

conferenceObject