Engineering of 3D self-directed quantum dot ordering in multilayer InGaAs/GaAs nanostructures by means of flux gas composition

Lateral ordering of InGaAs quantum dots on the GaAs (001) surface has been achieved in earlier reports, resembling an anisotropic pattern. In this work, we present a method of breaking the anisotropy of ordered quantum dots (QDs) by changing the growth environment. We show experimentally that using As(2) molecules instead of As(4) as a background flux is efficient in controlling the diffusion of distant Ga adatoms to make it possible to produce isotropic ordering of InGaAs QDs over GaAs (001). The control of the lateral ordering of QDs under As(2) flux has enabled us to improve their optical properties. Our results are consistent with reported experimental and theoretical data for structure and diffusion on the GaAs surface.

Self-directed student work groups using blended learning

This paper provides a description of an innovative teaching approach designed to facilitate student work groups using a blended learning approach that incorporates both traditional face-to-face teaching methods and an online student work group facility. The teaching approach is designed to accommodate a large introductory human resource management subject positioned within an undergraduate business degree.

Plasma-assisted self-organized growth of uniform carbon nanocone arrays

The self-organized growth of uniform carbon nanocone arrays using low-temperature non-equilibrium Ar + H 2 + CH 4 plasma-enhanced chemical vapor deposition (PECVD) is studied. The experiment shows that size-, shape-, and position-uniform carbon nanocone arrays can develop even from non-uniformly fragmented discontinuous nickel catalyst films. A three-stage scenario is proposed where the primary nanocones grow on large catalyst particles during the first stage, and the secondary nanocones are formed between the primary ones at the second stage. Finally, plasma-related effects lead to preferential growth of the secondary nanocones and eventually a uniform nanopattern is formed. This does not happen in a CVD process with the same gas feedstock and surface temperature. The proposed three-stage growth scenario is supported by the numerical experiment which generates nanocone arrays very similar to the experimentally synthesized nanopatterns. The self-organization process is explained in terms of re-distribution of surface and volumetric fluxes of plasma-generated species in a developing nanocone array. Our results suggest that plasma-related self-organization effects can significantly reduce the non-uniformity of carbon nanostructure arrays which commonly arises from imperfections in fragmented Ni-based catalyst films.

Observation of Peierls transition in nanowires (diameter similar to 130 nm) of the charge transfer molecule TTF-TCNQ synthesized by electric-field-directed growth

We report the growth of nanowires of the charge transfer complex tetrathiafulvalene-tetracyanoquinodimethane (TTF-TCNQ) with diameters as low as 130 nm and show that such nanowires can show Peierls transitions at low temperatures. The wires of sub-micron length were grown between two prefabricated electrodes (with sub-micron gap) by vapor phase growth from a single source by applying an electric field between the electrodes during the growth process. The nanowires so grown show a charge transfer ratio similar to 0.57, which is close to that seen in bulk crystals. Below the transition the transport is strongly nonlinear and can be interpreted as originating from de-pinning of CDW that forms at the Peierls transition.

Electric Field Directed Growth of Molecular Wires of Charge Transfer Molecules on Prefabricated Metal Electrodes

Molecular wires of charge transfer molecules were formed by co-evaporating the 7 7 8 8-Tetracyanoquinodimethane [TCNQ] (acceptor) and Tetrathiafulvalene [TTF] (donor) molecules across prefabricated metal electrodes. Molecular wires of TTF TCNQ were also formed by evaporating single complex of TTF:TCNQ across prefabricated metal electrodes The prefabricated metal electrodes were made using electron beam lithography on SiO2 and glass cover slip substrates. Even though TTF: TCNQ wires grown from both co-evaporation and evaporation techniques show semiconductor like behavior in temperature dependence of resistance they show different activation energies due the difference in stoichiometry of TTF and TCNQ.

Self catalytic growth of SnO2 branched nanowires by thermal evaporation

For the first time, Tin oxide (SnO2) multiple branched nanowires (NWs) have been synthesized by thermal evaporation of tin (Sn) in presence of oxygen without use of metal catalysts at low substrate temperature of 500 degrees C. Synthesized product consists of multiple branched nanowires and were single crystalline in nature. Each of the nanowire capped with catalyst particle at their ends. Energy dispersive X-ray analysis on the nanowires and capped nanoparticle confirms that Sn act as catalyst for SnO2 nanowires growth. A self catalytic vapor-liquid-solid (VLS) growth mechanism was proposed to describe the SnO2 nanowires growth. (C) 2012 Elsevier B.V. All rights reserved.

Self Catalytic Growth of Indium Oxide (In2O3) Nanowires by Resistive Thermal Evaporation

Self catalytic growth of Indium Oxide (In2O3) nanowires (NWs) have been grown by resistive thermal evaporation of Indium (In) in the presence of oxygen without use of any additional metal catalyst. Nanowires growth took place at low substrate temperature of 370-420 degrees C at an applied current of 180-200 A to the evaporation boat. Morphology, microstructures, and compositional studies of the grown nanowires were performed by employing field emission scanning electron microscopy (FESEM), X-Ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) respectively. Nanowires were uniformly grown over the entire Si substrate and each of the nanowire is capped with a catalyst particle at their end. X-ray diffraction study reveals the crystalline nature of the grown nanowires. Transmission electron microscopy study on the nanowires further confirmed the single crystalline nature of the nanowires. Energy dispersive X-ray analysis on the nanowires and capped nanoparticle confirmed that Indium act as catalyst for In2O3 nanowires growth. A self catalytic Vapor-Liquid-Solid (VLS) growth mechanism was responsible for the growth of In2O3 nanowires. Effect of oxygen partial pressure variation and variation of applied currents to the evaporation boat on the nanowires growth was systematically studied. These studies concluded that at oxygen partial pressure in the range of 4 x 10(-4), 6 x 10(-4) mbar at applied currents to the evaporation boat of 180-200 A were the best conditions for good nanowires growth. Finally, we observed another mode of VLS growth along with the standard VLS growth mode for In2O3 nanowires similar to the growth mechanism reported for GaAs nanowires.

Low temperature and self catalytic growth of ultrafine ITO nanowires by electron beam evaporation method and their optical and electrical properties

We report the self catalytic growth of Sn-doped indium oxide (ITO) nanowires (NWs) over a large area glass and silicon substrates by electron beam evaporation method at low substrate temperatures of 250-400 degrees C. The ITO NWs growth was carried out without using an additional reactive oxygen gas and a metal catalyst particle. Ultrafine diameter (similar to 10-15 nm) and micron long ITO NWs growth was observed in a temperature window of 300-400 degrees C. Transmission electron microscope studies confirmed single crystalline nature of the NWs and energy dispersive spectroscopy studies on the NWs confirmed that the NWs growth proceeds via self catalytic vapor-liquid-solid (VLS) growth mechanism. ITO nanowire films grown on glass substrates at a substrate temperature of 300-400 degrees C have shown similar to 2-6% reflection and similar to 70-85% transmission in the visible region. Effect of deposition parameters was systematically investigated. The large area growth of ITO nanowire films would find potential applications in the optoelectronic devices. (C) 2014 Elsevier Ltd. All rights reserved.

Fabrication and electrical integration of robust carbon nanotube micropillars by self-directed elastocapillary densification

Vertically aligned carbon nanotube (CNT) 'forest' microstructures fabricated by chemical vapor deposition (CVD) using patterned catalyst films typically have a low CNT density per unit area. As a result, CNT forests have poor bulk properties and are too fragile for integration with microfabrication processing. We introduce a new self-directed capillary densification method where a liquid is controllably condensed onto and evaporated from the CNT forests. Compared to prior approaches, where the substrate with CNTs is immersed in a liquid, our condensation approach gives significantly more uniform structures and enables precise control of the CNT packing density. We present a set of design rules and parametric studies of CNT micropillar densification by self-directed capillary action, and show that self-directed capillary densification enhances Young's modulus and electrical conductivity of CNT micropillars by more than three orders of magnitude. Owing to the outstanding properties of CNTs, this scalable process will be useful for the integration of CNTs as a functional material in microfabricated devices for mechanical, electrical, thermal and biomedical applications. © 2011 IOP Publishing Ltd.

Experiments and their analysis for self-assembly growth of GaN quantum dots via MOCVD

In recent years, growth of GaN-based materials-related quantum dots has become a hot topic in semiconductor materials research. Considerable efforts have been devoted to growth of self-assembled quantum dots of GaN-based materials via MOCVD (Metal Organic Chemical Vapor Deposition) and there are a lot of relevant literatures. There is, however, few review papers for the topic. In this paper, different experimental methods for fabrication of quantum dots of GaN-based materials via MOCVD are critically reviewed and the experimental conditions and parameters, which may affect growth of the quantum dots, are analyzed, with an aim at providing some critical reference for the related future experiment research.

Elastic Strain Field Distribution of a Self-Organized Growth Lensed-Shaped Quantum Dot by Finite Element Method

The stress and strain fields in self-organized growth coherent quantum dots (QD) structures are investigated in detail by two-dimension and three-dimension finite element analyses for lensed-shaped QDs. The nonobjective isolate quantum dot system is used. The calculated results can be directly used to evaluate the conductive band and valence band confinement potential and strain introduced by the effective mass of the charge carriers in strain QD.

Self-Assembled Growth of Agln(MoO4)(2) Submicroplates into Hierarchical Structures and Their Near-Infrared Luminescent Properties

Layer-controlled hierarchical flowerlike AgIn(MoO4)(2) microstructures with "clean" surfaces using submicroplates as building blocks without introducing any template have been fabricated through a low-cost hydrothermal method. The near-infrared luminescence of lanthanide ion (Nd, Er, and Yb) doped AgIn(MoO4)(2) microstructures, in the 1300-1600 nm region, was discussed and is of particular interest for telecommunication applications. X-ray diffraction, scanning electron microscopy, transmission electron microscopy, electron diffraction, and photoluminescence spectra were used to characterize these materials.