Depth dependent elastic strain in ZnO epilayer: combined Rutherford backscattering/channeling and X-ray diffraction

A ZnO layer was grown by metalorganic chemical vapor deposition (MOCVD) on a sapphire (0 0 0 1) substrate. The perpendicular and parallel elastic strain of the ZnO epilayer, e(perpendicular to) = 0.19%, e(parallel to) = -0.29%, respectively, were derived by using the combination of Rutherford backscattering (RBS)/channeling and X-ray diffraction (XRD). The ratio vertical bar e(parallel to)/ e(perpendicular to)vertical bar = 1.5 indicates that ZnO layer is much stiffer in the a-axis direction than in the c-axis direction. By using RBS/C, the depth dependent elastic strain was deduced. The strain is higher at the depth close to the interface and decreases towards the surface. The negative tetragonal distortion was explained by considering the lattice mismatch and thermal mismatch in ZnO thin film. (c) 2004 Elsevier B.V. All rights reserved.

Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling

The depth distribution of the strain-related tetragonal distortion e(T) in the GaN epilayer with low-temperature AlN interlayer (LT-AlN IL) on Si(111) substrate is investigated by Rutherford backscattering and channeling. The samples with the LT-AlN IL of 8 and 16 nm thickness are studied, which are also compared with the sample without the LT-AlN IL. For the sample with 16-nm-thick LT-AlN IL, it is found that there exists a step-down of e(T) of about 0.1% in the strain distribution. Meanwhile, the angular scan around the normal GaN <0001> axis shows a tilt difference about 0.01degrees between the two parts of GaN separated by the LT-AlN IL, which means that these two GaN layers are partially decoupled by the AlN interlayer. However, for the sample with 8-nm-thick LT-AlN IL, neither step-down of e(T) nor the decoupling phenomenon is found. The 0.01degrees decoupled angle in the sample with 16-nm-thick LT-AlN IL confirms the relaxation of the LT-AlN IL. Thus the step-down of e(T) should result from the compressive strain compensation brought by the relaxed AlN interlayer. It is concluded that the strain compensation effect will occur only when the thickness of the LT-AlN IL is beyond a critical thickness. (C) 2004 American Institute of Physics.

Structural characterization of AlGaN/GaN superlattices by x-ray diffraction and Rutherford backscattering

We report on structural characterization of AlGaN/GaN superlattices grown on sapphire. The superlattice formation is evidenced by high-resolution x-ray diffraction and transmission electron microscopy. The high resolution x-ray diffraction spectra exhibit a pattern of satellite peaks. The in-plane lattice constants of the superlattices indicate the coherent growth of the AlGaN layer onto GaN. The average At composition in the superlattices is determined to be 0.08 by Rutherford backscattering spectroscopy. The average parallel and perpendicular elastic strains for the SLs are determined to be (e(parallel to)) = +0.25% and (e(perpendicular to)) = -0.17%. (c) 2006 Elsevier Ltd. All rights reserved.

Depth dependence of the tetragonal distortion of a GaN layer on Si(111) studied by Rutherford backscattering/channeling

Rutherford backscattering and channeling have been used to characterize the structure of a GaN layer grown on a Si(111) substrate. The results show that a 1.26 mum GaN epitaxial layer with a rather abrupt interface and a good crystalline quality (chi(min)=3.4%) can be grown on a Si(111) substrate. Using the channeling angular scan around an off-normal <1 (2) over bar 13> axis in the {10 (1) over bar0} plane of the GaN layer, the tetragonal distortion e(T), which is caused by the elastic strain in the epilayer, can be determined. Moreover, the depth dependence of the e(T) can be obtained using this technique. A fully relaxed (e(T)=0) GaN layer for a thickness <2.8 mum is expected. (C) 2002 American Institute of Physics.

A review of X-ray laser development at Rutherford Appleton Laboratory

Recent experiments undertaken at the Rutherford Appleton Laboratory to produce X-ray lasing over the 5-30 nm wavelength range are reviewed. The efficiency of lasing is optimized when the main pumping pulse interacts with a preformed plasma. Experiments using double 75-ps pulses and picosecond pulses superimposed on 300-ps background pulses are described. The use of travelling wave pumping with the approximately picosecond pulse experiments is necessary as the gain duration becomes comparable to the time for the X-ray laser pulse to propagate along the target length. Results from a model taking account of laser saturation and deviations from the speed of light c of the travelling wave and X-ray laser group velocity are presented. We show that X-ray laser pulses as short as 2-3 ps can be produced with optical pumping pulses of approximate to1-ps.

A review of Ni-like X-ray laser experiments undertaken using the VULCAN laser at the Rutherford Appleton Laboratory

Recent progress using the VULCAN laser at the Rutherford Appleton Laboratory to pump X-ray lasing in nickel-like ions is reviewed. Double pulse pumping with similar to 100 ps pulses has been shown to produce significantly greater X-ray laser output than single pulses of duration 0.1-1 ns. With double pulse pumping, the main pumping pulse interacts with a pre-formed plasma created by a pre-pulse. The efficiency of lasing increases as there is a reduced effect of refraction of the X-ray laser beam due to smaller density gradients and larger gain volumes, which enable propagation of the X-ray laser beam along the full length of the target. The record shortest wavelength saturated laser at 5.9 nm has been achieved in Ni-like dysprosium using double pulse pumping of 75 ps duration from the VULCAN laser. A variant of the double pulse pumping using a single similar to 100 ps laser pulse and a superimposed short similar to 1 ps pulse has been found to further increase the efficiency of lasing by reducing the effects of over-ionisation during the gain period. The record shortest wavelength saturated laser pumped by a short similar to 1 ps pulse has been achieved in Ni-like samarium using the VULCAN laser operating in chirped pulse amplified (CPA) mode. Ni-like samarium lases at 7.3 nm. (C) 2000 Academie des sciences/Editions scientifiques et medicales Elsevier SAS.

COLLISIONALLY EXCITED X-RAY LASER SCHEMES - PROGRESS AT RUTHERFORD APPLETON LABORATORY

Characteristics of the 3p-3s amplified spontaneous emission from Ne-like Ge plasma columns, generated by ablation from massive targets, have been studied in detail. In particular, the gain coefficients of the J = 2-1 lines at 23.2 and 23.6 nm have been measured as a function of incident intensity for a 1.05-mu-m wavelength pump laser beam. For 100-mu-m wide stripe targets and a fixed energy pump laser the maximum gain length product is achieved at an irradiance of