Shot noise in linear macroscopic resistors

We report on direct experimental evidence of shot noise in a linear macroscopic resistor. The origin of the shot noise comes from the fluctuation of the total number of charge carriers inside the resistor associated with their diffusive motion under the condition that the dielectric relaxation time becomes longer than the dynamic transit time. The present results show that neither potential barriers nor the absence of inelastic scattering are necessary to observe shot noise in electronic devices.

Multivariate analysis of the dielectric response of materials modeled using networks of resistors and capacitors

We discuss the modeling of dielectric responses of electromagnetically excited networks which are composed of a mixture of capacitors and resistors. Such networks can be employed as lumped-parameter circuits to model the response of composite materials containing conductive and insulating grains. The dynamics of the excited network systems are studied using a state space model derived from a randomized incidence matrix. Time and frequency domain responses from synthetic data sets generated from state space models are analyzed for the purpose of estimating the fraction of capacitors in the network. Good results were obtained by using either the time-domain response to a pulse excitation or impedance data at selected frequencies. A chemometric framework based on a Successive Projections Algorithm (SPA) enables the construction of multiple linear regression (MLR) models which can efficiently determine the ratio of conductive to insulating components in composite material samples. The proposed method avoids restrictions commonly associated with Archie’s law, the application of percolation theory or Kohlrausch-Williams-Watts models and is applicable to experimental results generated by either time domain transient spectrometers or continuous-wave instruments. Furthermore, it is quite generic and applicable to tomography, acoustics as well as other spectroscopies such as nuclear magnetic resonance, electron paramagnetic resonance and, therefore, should be of general interest across the dielectrics community.

Comparison of non-Ohmic accelerated ageing of the ZnO- and SnO2-based voltage dependent resistors

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Breakdown voltage of metal-oxide resistors in liquid argon

We characterized a sample of metal-oxide resistors and measured their breakdown voltage in liquid argon by applying high voltage (HV) pulses over a 3 second period. This test mimics the situation in a HV-divider chain when a breakdown occurs and the voltage across resistors rapidly rise from the static value to much higher values. All resistors had higher breakdown voltages in liquid argon than their vendor ratings in air at room temperature. Failure modes range from full destruction to coating damage. In cases where breakdown was not catastrophic, subsequent breakdown voltages were lower in subsequent measuring runs. One resistor type withstands 131 kV pulses, the limit of the test setup.

MEMS-based incandescent microlamps for integrated optics applications

In this work we present the fabrication and operation of incandescent microlamps for integrated optics applications. This microlamp emits white and infrared light from a chromium resistor embedded in a free-standing silicon oxynitride (SiO(x)N(y)) cantilever that can be coupled to an optical waveguide. In fact, the chromium resistor is sandwiched between layers of SiO(x)N(y) that isolate it from the atmosphere, while electric current heats the resistor to incandescent temperatures. The same SiO(x)N(y) material used in the microlamp fabrication is also used to produce the optical waveguides to allow a monolithic integration of light source and optical circuit. Front-side bulk micromachining of the silicon substrate in potassium hydroxide (KOH) solution is used to fabricate the cantilevers that thermally isolate the resistors from the substrate, thus reducing the heat transfer and the current required to light the lamp.

Harmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS

This work investigates the harmonic distortion (HD) in 2-MOS balanced structures composed of triple gate FinFETs. HD has been evaluated through the determination of the third-order harmonic distortion (HD3), since this represents the major non-linearity source in balanced structures. The 2-MOS structures with devices of different channel lengths (L) and fin widths (W(fin)) have been studied operating in the linear region as tunable resistors. The analysis was performed as a function of the gate voltage, aiming to verify the correlation between operation bias and HD3. The physical origins of the non-linearities have been investigated and are pointed out. Being a resistive circuit, the 2-MOS structure is generally projected for a targeted on-resistance, which has also been evaluated in terms of HD3. The impact of the application of biaxial strain has been studied for FinFETs of different dimensions. It has been noted that HD3 reduces with the increase of the gate bias for all the devices and this reduction is more pronounced both in narrower and in longer devices. Also, the presence of strain slightly diminishes the non-linearity at a similar bias. However, a drawback associated with the use of strain engineering consists in a significant reduction of the on-resistance with respect to unstrained devices. (C) 2011 Elsevier Ltd. All rights reserved.

The impact of different power dividers used in a non-uniform planar antenna array

Wireless communications are widely used for various applications, requiring antennas with different features. Often, to achieve the desired radiation pattern, is necessary to employ antenna arrays, using non-uniform excitation on its elements. Power dividers can be used and the best known are the T-junction and the Wilkinson power divider, whose main advantage is the isolation between output ports. In this paper the impact of this isolation on the overall performance of a circularly polarized planar antenna array using non-uniform excitation is investigated. Results show a huge decrease of the array bandwidths either in terms of return loss or in polarization, without resistors. © 2014 IEEE.

A MOSFET-only wideband LNA exploiting thermal noise canceling and gain optimization

Dissertação apresentada na Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa para a obtenção do grau de Mestre em Engenharia Electrotécnica e de Computadores

Supercondensadores

Uma nova tecnologia, os EDLC, também denominados por supercondensadores, tem-se tornado numa importante e aliciante área de interesse. Estes regem-se pelos mesmos princípios fundamentais dos condensadores clássicos, no entanto possibilitam receber capacidades superiores, devido a uma maior área de superfície e a um dielétrico menos espesso. Esta particularidade permite obter uma maior densidade energética, comparativamente com os condensadores clássicos e uma maior densidade de potência, comparativamente com as baterias. Consequentemente a utilização de supercondensadores tem aumentado, representando já uma alternativa fiável, segura e amiga do ambiente, em detrimento das baterias comuns. Assim, este projeto tem como principais objetivos, identificar os diferentes tipos de supercondensadores, apresentar as vantagens de cada tipo e explorar a sua resposta, quer no domínio das frequências quer no domínio dos tempos, e por fim modelá-los recorrendo a componentes elétricos clássicos, nomeadamente resistências e condensadores. A modelação foi realizada recorrendo ao MALTAB, através da função de minimização fminunc e foram construídos quatro modelos equivalentes, com o objetivo de modelar a resposta dos vários EDLC analisados. Por escassez de tempo o principal foco de análise recaiu sobre o EDLC de 0,022 F.

Otimização do processo de injeção de ZAMAK

A indústria automóvel necessita aumentar a produtividade de forma sistemática, com vista à redução de custos e incremento da competitividade. A otimização dos produtos e processos é uma constante. O presente trabalho foi solicitado pela empresa FicoCables, do Grupo FICOSA, tendo em vista a otimização do processo de injeção de pequenas peças injetadas em ZAMAK, que constituem o bloqueio na extremidade de cada cabo metálico inserido nos automóveis para abertura da mala, portas, travão de mão, reservatório de combustível, capô, etc. A empresa possui cerca de 52 equipamentos de injeção de ZAMAK, cuja temperatura dos bicos era mantida com base numa chama de gás. Os sucessivos problemas de controlo do sistema ditaram uma mudança estratégica no aquecimento desses bicos, passando a ser usadas resistências elétricas anelares. No entanto, esta mudança veio a apresentar problemas inesperados, os quais se vieram inclusivamente a tornar em problemas de segurança, devido ao desgaste interior prematuro dos bicos, os quais apresentaram esmo problema de rotura. Paralelamente, todos os parâmetros relacionados com este processo de fabrico estavam também estudados de forma algo incipiente, pelo que se tornou necessário compreender e dissecar todas as variáveis relacionadas com o processo e implementar sistemas que impedissem o ajuste não controlado dos parâmetros por parte dos operadores. Também os moldes foram alvo de ações de melhoria, com vista a evitar problemas na zona de contacto do bico com o molde. O processo foi analisado em pormenor, permitindo um controlo muito mais apurado do mesmo. Os resultados fizeram sentir-se de forma imediata, graças ao trabalho desenvolvido neste estudo e à abertura demonstrada pela empresa para implementar todas as soluções propostas. O resultado final traduz-se num incremento significativo da segurança para os operadores, num controlo muito mais apurado de todos os parâmetros envolvidos no processo, numa maior garantia da qualidade nos produtos injetados em ZAMAK e em ganhos financeiros significativos para a empresa.

A 1.2 V low noise amplifier with double feedback for high gain and low noise figure

Dissertação para obtenção do Grau de Mestre em Engenharia Eletrotécnica e de Computadores

Wideband CMOS low noise amplifiers

Modern fully integrated receiver architectures, require inductorless circuits to achieve their potential low area, low cost, and low power. The low noise amplifier (LNA), which is a key block in such receivers, is investigated in this thesis. LNAs can be either narrowband or wideband. Narrowband LNAs use inductors and have very low noise figure, but they occupy a large area and require a technology with RF options to obtain inductors with high Q. Recently, wideband LNAs with noise and distortion cancelling, with passive loads have been proposed, which can have low NF, but have high power consumption. In this thesis the main goal is to obtain a very low area, low power, and low-cost wideband LNA. First, it is investigated a balun LNA with noise and distortion cancelling with active loads to boost the gain and reduce the noise figure (NF). The circuit is based on a conventional balun LNA with noise and distortion cancellation, using the combination of a common-gate (CG) stage and common-source (CS) stage. Simulation and measurements results, with a 130 nm CMOS technology, show that the gain is enhanced by about 3 dB and the NF is reduced by at least 0.5 dB, with a negligible impact on the circuit linearity (IIP3 is about 0 dBm). The total power dissipation is only 4.8 mW, and the active area is less than 50 x 50 m2 . It is also investigated a balun LNA in which the gain is boosted by using a double feedback structure.We propose to replace the load resistors by active loads, which can be used to implement local feedback loops (in the CG and CS stages). This will boost the gain and reduce the noise figure (NF). Simulation results, with the same 130 nm CMOS technology as above, show that the gain is 24 dB and NF is less than 2.7 dB. The total power dissipation is only 5.4 mW (since no extra blocks are required), leading to a figure-of-merit (FoM) of 3.8 mW

Disseny i caracterització d'estructures RF amb printed electronics per a RFID

En els últims anys printed electronics està aixecant un gran interès entre la indústria electrònica. Aquest tipus de procés consisteix en imprimir circuits amb tècniques d'impressió convencionals utilitzant tintes conductores, resistives, dielèctriques o semiconductores sobre substrats flexibles de baix cost com paper o plàstic. Fer servir aquestes tècniques s'espera que suposi una reducció dels costos de producció degut a que és un procés totalment additiu el que fa que sigui més senzill i es redueixi la quantitat de material emprat. El disseny de dispositius bàsics com resistències, condensadors i bobines per posteriorment veure la relació entre simulacions i valors obtinguts ha ocupat la primera part del projecte. La segona s’ha centrat en fer prototips d’antenes per a RFID (Radio Frequency IDentification) amb la tecnologia que es disposa a CEPHIS (Centre de Prototips i Solucions Hardwre-Software). Tot això ha servit per caracteritzar la tecnologia de la que es disposa i saber en quins apartats s’ha de seguir treballant per aconseguir millors prestacions.

On the thermal noise introduced by a resistor in a circuit

Comentari sobre l'article publicat anteriorment pels mateixos autors: Vargas, M; Pallás, R; The seemingly paradoxical noise behaviour some active circuits. IEEE Transactions on Instrumentation and Measurement. 1994, vol. 43, núm. 5, p. 764-767

Nosturin tehonsyöttö rinnankytketyillä verkkovaihtosuuntaajilla

Taajuusmuuttajaohjatuissa nosturikäytöissä taakkaa laskettaessa syntyvä energia on muutettava lämmöksi jarruvastuksissa tai syötettävä takaisin sähköverkkoon esimerkiksi verkkovaihtosuuntaajalla. Verkkovaihtosuuntaajaa on tyypillisesti käytetty suurissa satamanostureissa, joiden tehontarve on yli 1000 kW. Työssä tutkitaan useista yhteiseen välipiiriin rinnankytketyistä nimellisteholtaan 250 kW:n verkkovaihtosuuntaajista koostuvan verkkoonjarrutuslaitteiston soveltuvuutta nosturikäyttöön. Lisäksi johdetaan yhtälöt verkkoonjarrutuslaitteiston virran laskemiseksi, kun nosturin mekaaniset arvot tunnetaan. Viidestä erityyppisestä nosturista esitellään esimerkkitoteutus rinnankytketyillä verkkovaihtosuuntaajilla. Aiemmin vastusjarruttavina toteutettujen nostureiden kustannuksia verrataan verkkovaihtosuuntaajilla toteutettuihin ratkaisuihin. Esimerkkinostureista esitetään nosturin työsykliin perustuva arvio verkkoonjarrutuksen tuomasta energian säästöstä. Tehtyjen mittausten perusteella käytetty menetelmä verkkovaihtosuuntaajien rinnan kytkemiseksi osoittautui nosturikäytössä toimivaksi. Kustannuslaskelmien perusteella verkkovaihtosuuntaajalla toteutetusta nosturista tulee materiaalikustannuksiltaan vastusjarruttavaa kalliimpi, vaikka paljon tilaa vievät vastuskaapit voidaankin jättää pois.