Continuous-wave and passively mode-locked Yb : GYSO lasers pumped by diode lasers

We report both continuous-wave and passively mode-locked laser actions in a Yb3+-doped gadolinium yttrium oxyorthosilicate Yb:GdySiO(5) (Yb:GYSO) crystal. Continuous-wave (CW) laser operations were compared under different pump conditions with high-power diodes of different wavelengths and fiber cores. CW mode-locking was obtained with a semiconductor saturable absorber mirror.

Spectral measurement of diode lasers with a single-mode birefringent fibre

A new, and very simple spectrometer based on birefringent fiber is described. A resolution of 0.02 angstrom has been achieved, and the system has been used to measure diode laser chirp. A length of 10km of fiber would be sufficient to resolve single mode line widths.

Long-wavelength monolithic mode-locked diode lasers

A detailed study of the design issues relevant to long-wavelength monolithic mode-locked lasers is presented. Following a detailed review of the field, we have devised a validated travelling wave model to explore the limits of mode-locking in monolithic laser diodes, not only in terms of pulse duration and repetition rate, but also in terms of stability. It is shown that fast absorber recovery is crucial for short pulse width, that the ratio of gain to absorption saturation is key in accessing ultrashort pulses and that low alpha factors give only modest benefit. Finally, optimized contact layouts are shown to greatly enhance pulse stability and the overall operational success. The design rules show high levels of consistency with published experimental data.

Ultrafast Diode Lasers

List of major symbols.

Ultrashort pulse generation in diode lasers

The basic ideas and current state of the art of ultrashort pulse generation by injection lasers are reviewed. All developed techniques, including gain switching, Q-switching, and mode-locking are described and compared. A simple theoretical treatment of a diode laser which emits picosecond light pulses is discussed. Some fundamental limits of the pulse parameters are discussed. Finally, compression of chirped optical pulses by optical fibres and the soliton effect is considered. © 1992 Chapman & Hall.

High performance 1689-nm quantum well diode lasers

1689-nm diode lasers used in medical apparatus have been fabricated and characterized. The lasers had pnpn InP current confinement structure, and the active region consisted of 5 pairs of InGaAs quantum wells and InGaAsP barriers. Stripe width and cavity length of the laser were 1.8 and 300 pm, respectively. After being cavity coated. and transistor outline (TO) packaged, the lasers showed high performance in practice. The threshold current was about 13 +/- 4 mA, the operation current and the lasing spectrum were about 58 6 mA and 1689 +/- 6 nm at 6-mW output power, respectively. Moreover, the maximum output power of the lasers was above 20 mW.

Design consideration and performance of high-power and high-brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers (lambda=0.98 mu m)

In this paper, we conduct a theoretical analysis of the design, fabrication, and performance measurement of high-power and high-brightness strained quantum-well lasers emitting at 0.98 mum, The material system of interest consists of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers. Some key parameters of the laser structure are theoretically analyzed, and their effects on the laser performance are discussed. The laser material is grown by metal-organic chemical vapor deposition and demonstrates high quality with low-threshold current density, high internal quantum efficiency, and extremely low internal loss. High-performance broad-area multimode and ridge-waveguide single-mode laser devices are fabricated. For 100-mum-wide stripe lasers having a cavity length of 800 mum, a high slope efficiency of 1.08 W-A, a low vertical beam divergence of 34 degrees, a high output power of over 4.45 W, and a very high characteristic temperature coefficient of 250 K were achieved. Lifetime tests performed at 1.2-1.3 W (12-13 mW/mum) demonstrates reliable performance. For 4-mum-wide ridge waveguide single-mode laser devices, a maximum output power of 394 mW and fundamental mode power up to 200 mW with slope efficiency of 0.91 mW/mum are obtained.

Advances in high power semiconductor diode lasers - art. no. 682402

High power semiconductor lasers have broad applications in the fields of military and industry. Recent advances in high power semiconductor lasers are reviewed mainly in two aspects: improvements of diode lasers performance and optimization of packaging architectures of diode laser bars. Factors which determine the performance of diode lasers, such as power conversion efficiency, temperature of operation, reliability, wavelength stabilization etc., result from a combination of new semiconductor materials, new diode structures, careful material processing of bars. the latest progress of today's high-power diode lasers at home and abroad is briefly discussed and typical data are presented. The packaging process is of decisive importance for the applicability of high-power diode laser bars, not only technically but also economically. The packaging techniques include the material choosing and the structure optimizing of heat-sinks, the bonding between the array and the heat-sink, the cooling and the fiber coupling, etc. The status of packaging techniques is stressed. There are basically three different diode package architectural options according to the integration grade. Since the package design is dominated by the cooling aspect,. different effective cooling techniques are promoted by different package architectures and specific demands. The benefit and utility of each package are strongly dependent upon the fundamental optoelectronic properties of the individual diode laser bars. Factors which influence these properties are outlined and comparisons of packaging approaches for these materials are made. Modularity of package for special application requirements is an important developing tendency for high power diode lasers.

Effect of Er : YAG and diode lasers on the adhesion of blood components and on the morphology of irradiated root surfaces

Objectives: the aim of this study was to evaluate in vitro, by scanning electron microscopy (SEM), the adhesion of blood components on root surfaces irradiated with Er:YAG (2.94 mu m) and GaAlAs Diode (808 nm) lasers and the effects on the morphology of irradiated root surfaces.Methods: One hundred samples of human teeth were obtained. They were previously planed and scaled with manual instruments and divided into five groups of 20 samples each: G1 (control group) - absence of treatment; G2 - Er:YAG laser (7.6 J/cm(2)); G3 - Er:YAG laser (12.9 J/cm(2)); G4 - Diode laser (90 J/cm(2)) and G5 - Diode laser (108 J/cm(2)). After these treatments, 10 samples of each group received a blood tissue but the remaining 10 did not. After laboratory treatments, the samples were obtained by SEM, the photomicrographs were analysed by the score of adhesion of blood components and the results were statistically analysed (Kruskall-Wallis and Mann-Whitney test).Results: In relation to the adhesion of blood components, the study showed no significant differences between the control group and the groups treated with Er:YAG laser (p = 0.9633 and 0.6229). Diode laser radiation was less effective than control group and Er:YAG laser radiation (p < 0.01).Conclusion: None of the proposed treatments increased the adhesion of blood components in a significant way when compared to the control group. Although the Er:YAG laser did not interfere in the adhesion of blood components, it caused more changes on the root surface, whereas the Diode laser inhibited the adhesion.

Single-exposure, photorefractive holographic surface contouring with multiwavelength diode lasers

We studied the use of multiwavelength diode lasers for surface profilometry through holographic recording in sillenite Bi(12)TiO(20) crystals. When such lasers are used, the holographic image from single-exposure recordings appears covered with interference fringes providing information on the surface relief of the object. By taking advantage of the narrow interference fringes due to the multiwavelength emission of the laser, we obtained interferograms by holographic recording with two reference beams, which improves the surface analysis by visual inspection and enhances the profilometry sensitivity. (c) 2005 Optical Society of America.