Influence of rapid thermal annealing (RTA) on the structural and electrical properties of SnS films

The performance of optoelectronic devices critically depends on the quality of active layer. An effective way to obtain a high quality layers is by creating excess of metal atoms through various heat treatments. Recently, rapid thermal annealing (RTA) has proved a versatile technique for the post-treatment of semiconductor materials as compared to other techniques due to its precise control over the resources. Thus, we carried out a set of experiments on SnS films to explore the influence of RTA treatment on their properties. From these experiments we noticed that the films treated at 400 °C for 1 min in N2 atmosphere have a low electrical resistivity of ~5 Ωcm with relatively high Hall mobility and carrier density of 99 cm2/Vs and 1.3 × 1016 cm−3, respectively. The observed results, therefore, emphasise that it is possible to obtain good quality SnS films through RTA treatment without disturbing their crystal structure.

"There's no way in hell I would pull up" : Deterrent and other effects of vehicle impoundment laws for hooning

Traffic law enforcement is based on deterrence principles, whereby drivers control their behaviour in order to avoid an undesirable sanction. For “hooning”-related driving behaviours in Queensland, the driver’s vehicle can be impounded for 48 hours, 3 months, or permanently depending on the number of previous hooning offences. It is assumed that the threat of losing something of value, their vehicle, will discourage drivers from hooning. While official data shows that the rate of repeat offending is low, an in-depth understanding of the deterrent effects of these laws should involve qualitative research with targeted drivers. A sample of 22 drivers who reported engaging in hooning behaviours participated in focus group discussions about the vehicle impoundment laws as applied to hooning offences in Queensland. The findings suggested that deterrence theory alone cannot fully explain hooning behaviour, as participants reported hooning frequently, and intended to continue doing so, despite reporting that it is likely that they will be caught, and perceiving the vehicle impoundment laws to be extremely severe. The punishment avoidance aspect of deterrence theory appears important, as well as factors over and above legal issues, particularly social influences. A concerning finding was drivers’ willingness to flee from police in order to avoid losing their vehicle permanently for a third offence, despite acknowledging risks to their own safety and that of others. This paper discusses the study findings in terms of the implications for future research directions, enforcement practices and policy development for hooning and other traffic offences for which vehicle impoundment is applied.

Fatigued driving : prevalence, risk factors and groups, and the law

Fatigue and sleepiness are major causes of road traffic accidents. However, precise data is often lacking because a validated and reliable device for detecting the level of sleepiness (cf. the breathalyzer for alcohol levels) does not exist, nor does criteria for the unambiguous detection of fatigue/sleepiness as a contributing factor in accident causation. Therefore, identification of risk factors and groups might not always be easy. Furthermore, it is extremely difficult to incorporate fatigue in operationalized terms into either traffic or criminal law. The main aims of this thesis were to estimate the prevalence of fatigue problems while driving among the Finnish driving population, to explore how VALT multidisciplinary investigation teams, Finnish police, and courts recognize (and prosecute) fatigue in traffic, to identify risk factors and groups, and finally to explore the application of the Finnish Road Traffic Act (RTA), which explicitly forbids driving while tired in Article 63. Several different sources of data were used: a computerized database and the original folders of multidisciplinary teams investigating fatal accidents (VALT), the driver records database (AKE), prosecutor and court decisions, a survey of young male military conscripts, and a survey of a representative sample of the Finnish active driving population. The results show that 8-15% of fatal accidents during 1991-2001 were fatigue related, that every fifth Finnish driver has fallen asleep while driving at some point during his/her driving career, and that the Finnish police and courts punish on average one driver per day on the basis of fatigued driving (based on the data from the years 2004-2005). The main finding regarding risk factors and risk groups is that during the summer months, especially in the afternoon, the risk of falling asleep while driving is increased. Furthermore, the results indicate that those with a higher risk of falling asleep while driving are men in general, but especially young male drivers including military conscripts and the elderly during the afternoon hours and the summer in particular; professional drivers breaking the rules about duty and rest hours; and drivers with a tendency to fall asleep easily. A time-of-day pattern of sleep-related incidents was repeatedly found. It was found that VALT teams can be considered relatively reliable when assessing the role of fatigue and sleepiness in accident causation; thus, similar experts might be valuable in the court process as expert witnesses when fatigue or sleepiness are suspected to have a role in an accident’s origins. However, the application of Article 63 of the RTA that forbids, among other things, fatigued driving will continue to be an issue that deserves further attention. This should be done in the context of a needed attitude change towards driving while in a state of extreme tiredness (e.g., after being awake for more than 24 hours), which produces performance deterioration comparable to illegal intoxication (BAC around 0.1%). Regarding the well-known interactive effect of increased sleepiness and even small alcohol levels, the relatively high proportion (up to 14.5%) of Finnish drivers owning and using a breathalyzer raises some concern. This concern exists because these drivers are obviously more focused on not breaking the “magic” line of 0.05% BAC than being concerned about driving impairment, which might be much worse than they realize because of the interactive effects of increased sleepiness and even low alcohol consumption. In conclusion, there is no doubt that fatigue and sleepiness problems while driving are common among the Finnish driving population. While we wait for the invention of reliable devices for fatigue/sleepiness detection, we should invest more effort in raising public awareness about the dangerousness of fatigued driving and educate drivers about how to recognize and deal with fatigue and sleepiness when they ultimately occur.

Random Breath Testing Operation and Effectiveness in 1985

Random breath testing (RBT) was introduced in South Australia in 1981 with the intention of reducing the incidence of accidents involving alcohol. In April 1985, a Select Committee of the Upper House which had been established to “review the operation of random breath testing in this State and any other associated matters and report accordingly” presented its report. After consideration of this report, the Government introduced extensive amendments to those sections of the Motor Vehicles Act (MVA) and Road Traffic Act (RTA) which deal with RBT and drink driving penalties. The amended section 47da of the RTA requires that: “(5) The Minister shall cause a report to be prepared within three months after the end of each calendar year on the operation and effectiveness of this section and related sections during that calendar year. (6) The Minister shall, within 12 sitting days after receipt of a report under subsection (5), cause copies of the report to be laid before each House of Parliament.” This is the first such report. Whilst it deals with RBT over a full year, the changed procedures and improved flexibility allowed by the revision to the RTA were only introduced late in 1985 and then only to the extent that the existing resources would allow.

Simultaneous measurement of mechanical and electrical contact resistances during nanoindentation of NiTi shape memory alloys

The nanoindentation technique can be employed in shape memory alloys (SMAs) to discern the transformation temperatures as well as to characterize their mechanical behavior. In this paper, we use it with simultaneous measurements of the mechanical and the electrical contact resistances (ECR) at room temperature to probe two SMAs: austenite (RTA) and martensite (RTM). Two different types of indenter tips - Berkovich and spherical - are employed to examine the SMAs' indentation responses as a function of the representative strain, epsilon(R). In Berkovich indentation, because of the sharp nature of the tip, and in consequence the high levels of strain imposed, discerning the two SMAs on the basis of the indentation response alone is difficult. In the case of the spherical tip, epsilon(R) is systematically varied and its effect on the depth recovery ratio, eta(d), is examined. Results indicate that RTA has higher eta(d) than RTM, but the difference decreases with increasing epsilon(R) such that eta(d) values for both the alloys would be similar in the fully plastic regime. The experimental trends in eta(d) vs. epsilon(R) for both the alloys could be described well with a eta(d) proportional to (epsilon(R))(-1) type equation, which is developed on the basis of a phenomenological model. This fit, in turn, directs us to the maximum epsilon(R), below which plasticity underneath the indenter would not mask the differences in the two SMAs. It was demonstrated that the ECR measurements complement the mechanical measurements in demarcating the reverse transformation from martensite to austenite during unloading of RTA, wherein a marked increase in the voltage was noted. A correlation between recovery due to reverse transformation during unloading and increase in voltage (and hence the electrical resistance) was found. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Structure and magnetic characteristics of nonpolar a-plane GaN : Mn films

Diluted magnetic nonpolar GaN:Mn films have been fabricated by implanting Mn ions into unintentionally doped nonpolar a-plane (1 1 (2) over bar 0) GaN films with a subsequent rapid thermal annealing (RTA) process. The structure, morphology and magnetic characteristics of the samples were investigated by means of high-resolution x-ray diffraction (XRD), atomic force microscopy (AFM) and a superconducting quantum interference device (SQUID), respectively. The XRD analysis shows that the RTA process can effectively recover the crystal deterioration caused by the implantation process and that there is no obvious change in the lattice parameter for the as-annealed sample. The SQUID result indicates that the as-annealed sample shows ferromagnetic properties and magnetic anisotropy at room temperature.

The structure, morphology and Raman scattering study on Mn-implanted nonpolar a-plane GaN films

Dilute magnetic nonpolar GaN films with a Curie temperature above room temperature have been fabricated by implanting Mn ions into unintentionally doped nonpolar a-plane (1 1 (2) over bar 0) GaN films and a subsequent rapid thermal annealing (RTA) process. The impact of the implantation and RTA on the structure and morphology of the nonpolar GaN films is studied in this paper. The scanning electron microscopy analysis shows that the RTA process can effectively recover the implantation-indUced damage to the surface morphology of the sample. The X-ray diffraction and micro-Raman scattering spectroscopy analyses show that the RTA process can just partially recover the implantation-induced crystal deterioration. Therefore, the quality of the Mn-implanted nonpolar GaN films should be improved further for the application in spintronic devices. (C) 2009 Elsevier B.V. All rights reserved.

Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method

We propose an innovative technique, making use of the In segregation effect, referred as the N irradiation method, to enhance In-N bonding and extend the emission wavelength of GaInNAs quantum wells (QWs). After the formation of a complete In floating layer, the growth is interrupted and N irradiation is initiated. The majority of N atoms are forced to bond with In atoms and their incorporation is regulated independently by the N exposure time and the As pressure. The effect of the N exposure time and As pressure on the N incorporation and the optical quality of GaInNAs QWs were investigated. Anomalous photoluminescence (PL) wavelength red shifts after rapid thermal annealing (RTA) were observed in the N-irradiated samples, whereas a normal GaInNAs sample revealed a blue shift. This method provides an alternative way to extend the emission wavelength of GaInNAs QWs with decent optical quality. We demonstrate light emission at 1546 nm from an 11-nm-thick QW, using this method and the PL intensity is similar to that of a 7-nm-thick GaInNAs QW grown at a reduced rate. (C) 2008 Elsevier B.V. All rights reserved.

Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers

In this work, InAs quantum dots (QDs) grown on a linear graded InGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QDs were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 mu m as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QDs was blue-shifted and the full width at half maximum decreased.

Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates

The photoluminescence (PL) characteristics of GaAsSbN/GaAs epilayers grown by molecular beam epitaxy (MBE) are carefully investigated. The results show that antimony (Sb) incorporation into GaNAs material has less influence on the N-induced localization states. For the same N concentration, GaAsSbN material can reach an emission wavelength near 1.3 mum more easily than GaInNAs material. The rapid thermal annealing (RTA) experiment shows that the annealing induced rearrangement of atoms and related blueshift in GaAsSbN epilayers are smaller than those in GaNAs and GaInNAs epilayers. The GaAsSbN material can keep a longer emission wavelength near 1.3 mum-emission even after the annealing treatment. Raman spectroscopy analysis gives further insight into the structure stability of GaAsSbN material after annealing. (C) 2004 Elsevier Ltd. All rights reserved.

Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy

The effect of rapid thermal annealing on the InAs quantum dots (QDs) grown by atomic layer molecular beam epitaxy and capped with InGaAs layer has been investigated using transmission electron microscopy and photoluminescence (PL). Different from the previously reported results, no obvious blueshift of the PL emission of QDs is observed until the annealing temperature increases up to 800 degreesC. The size and shape of the QDs annealed at 750 degreesC have hardly changed indicating the relatively weak Ga/In interdiffusion, which is characterized by little blueshift of the PL peak of QDs. The QD size increases largely and a few large clusters can be observed after 800 degreesC RTA, implying the fast interdiffusion and the formation of InGaAs QDs. These results indicate that the delay of the blueshift of the PL peak of QDs is correlated with the abnormal interdiffusion process, which can be explained by two possible reasons: the reduction of excess-As-induced defects and the redistribution of In, Ga atoms around the InAs QDs resulted from the sub-monolayer deposition of InGaAs capping layer. (C) 2004 Elsevier B.V. All rights reserved.

Temperature-induced switching-over of the luminescence transitions in GaInNAs/GaAs quantum wells

Photoluminescence (PL) spectra of the GaInNAs/GaAs single quantum well (SQW) with different N compositions are carefully studied in a range of temperatures and excitation power densities. The anomalous S-shape temperature dependence of the PL peak is analysed based on the competition and switching-over between the peaks related to N-induced localized states and the peak related to interband excitonic recombination. It is found that with increasing N composition, the localized energy increases and the turning point of the S-shape temperature dependence occurs at higher temperature, where the localized carriers in the bandtail states obtain enough thermal activation energy to be dissociated and delocalized. The rapid thermal annealing (RTA) effectively reduces the localized energy and causes a decrease of the switching-over temperature.

Rapid thermal annealing properties of ZnO films grown using methanol as oxidant

ZnO thin films were grown by metal-organic chemical vapour deposition using methanol as oxidant. Rapid thermal annealing (RTA) was performed in an ambient of one atmosphere oxygen at 900 degrees C for 60 s. The RTA properties of the films have been characterized using scanning electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, photoluminescence spectra and Hall measurement. The grains of the film were well coalesced and the surface became denser after RTA. The full-width at half maximum of rocking curves was only 496 arcsec. The ZnO films were also proved to have good optical quality. The Hall mobility increased to 43.2 cm(2) V-1 s(-1) while the electron concentration decreased to 6.6 x 10(16) cm(-3). It is found that methanol is a potential oxidant for ZnO growth and the quality of ZnO film can be improved substantially through RTA.