Polaritons de exciton em super-redes semicondutoras

In this work we study the spectrum (bulk and surface modes) of exciton-polaritons in infinite and semi-infinite binary superlattices (such as, ···ABABA···), where the semiconductor medium (A), whose dielectric function depends on the frequency and the wavevector, alternating with a standard dielectric medium B. Here the medium A will be modeled by a nitride III-V semiconductor whose main characteristic is a wide-direct energy gap Eg. In particular, we consider the numerical values of gallium nitride (GaN) with a crystal structure wurtzite type. The transfer-matrix formalism is used to find the exciton-polariton dispersion relation. The results are obtained for both s (TE mode: transverse electric) and p (TM mode: transverse magnetic) polarizations, using three diferent kind of additional boundary conditions (ABC1, 2 e 3) besides the standard Maxwell's boundary conditions. Moreover, we investigate the behavior of the exciton-polariton modes for diferent ratios of the thickness of the two alternating materials forming the superlattice. The spectrums shows a confinement of the exciton-polariton modes due to the geometry of the superlattice. The method of Attenuated Total Reflection (ATR) and Raman scattering are the most adequate for probing this excitations

Coupling between cavity mode and heavy-hole exciton and light-hole exciton in semiconductor microcavity

The reflectivity spectra at different incident angles of semiconductor microcavity having heavy-hole exciton and light-hole exciton are calculated ly transfer matrix method using the linear dispersion model. Meanwhile we calculate the energy of three cavity polaritons at different incident angles formed by the coupling between cavity mode and the two exciton modes using the three harmonic oscillators coupling model, and the weights of cavity mode and the two exciton modes in the three cavity polaritons. The results indicate that there is obvious anticross between the high energy cavity polariton and the two low energy cavity polaritons with increasing incident angles, and the weights of three modes(cavity mode, heavy-hole exciton mode and light-hole exciton mode) in the three cavity polaritons increase or decrease.

In-plane propagation of cavity polaritons in a quantum semiconductor microcavity

Considering that the coupling among the heavy-hole exciton, light-hole exciton and the cavity photon can form bipolaritons in a quantum semiconductor microcavity, we calculate the group velocities of the cavity polaritons at different incident angles using the coupling model of three harmonic oscillators. The result indicates that the group velocities of the low and middle branches of the cavity polaritons have extrema, but the group velocities of the high branch increase with the increasing incident angle.

Experimental investigation of photoluminescence dynamics of cavity polaritons under nonresonant excitation

Low-temperature time-resolved photoluminescence (PL) experiments have been performed on a semiconductor planar microcavity, which contains two sets of three In0.13Ga0.87As/GaAs quantum wells embedded in a 3 lambda /2 GaAs cavity. The spontaneous emission dynamics of both lower- and upper-branch polaritons is investigated as a function of exciton-cavity detuning under nonresonant optical excitation. It is found that the PL decay times of both branches are independent of cavity detuning while the PL rising kinetics of the lower- and upper-branch polaritons exhibits a significant difference. The rise time of the upper polarition branch shows a strong dependence on cavity detuning, while the rise time of the lower polarition branch is less sensitive to cavity detuning. Our results can be well understood in the framework of the theoretical prediction of Tassone et al.

Exciton energy of the InAs/GaAs self-assembled quantum dot in a semiconductor microcavity

We report on the theoretical study of the interaction of the quantum dot (QD) exciton with the photon waveguide models in a semiconductor microcavity. The InAs/GaAs self-assembled QD exciton energies are calculated in a microcavity. The calculated results reveal that the electromagnetic field reduces the exciton energies in a semiconductor microcavity. The effect of the electromagnetic field decreases as the radius of the QD increases. Our calculated results are useful for designing and fabricating photoelectron devices.

Dynamics of Cavity Polaritons in a GaAs Quantum-well Semiconductor Microcavity

To provide the dynamics of cavity polariton in semiconductor microcavity containing GaAs quantum-well, the dispersions of the three cavity polaritons have been given by the model of three coupled oscillators, meanwhile the linewidths, group velocities and the mass of the three cavity polaritons have been demonstrated. The results indicated that because of the weight occupied by the photon, heavy hole exciton and light hole extiton in the three cavity ploariton the cavity polaritons exhibited different dynamic behaviors.

Vers la fabrication d’échantillons permettant la condensation Bose-Einstein de polaritons excitoniques dans des cristaux d’anthracène en microcavités

Nous investiguons dans ce travail la création d'échantillons permettant l'étude du comportement des polaritons excitoniques dans les matériaux semi-conducteurs organiques. Le couplage fort entre les états excités d'électrons et des photons impose la création de nouveaux états propres dans le milieu. Ces nouveaux états, les polaritons, ont un comportement bosonique et sont donc capables de se condenser dans un état fortement dégénéré. Une occupation massive de l'état fondamental permet l'étude de comportements explicables uniquement par la mécanique quantique. La démonstration, au niveau macroscopique, d'effets quantiques promet d'éclairer notre compréhension de la matière condensée. De plus, la forte localisation des excitons dans les milieux organiques permet la condensation des polaritons excitoniques organiques à des températures beaucoup plus hautes que dans les semi-conducteurs inorganiques. À terme, les échantillons proposés dans ce travail pourraient donc servir à observer une phase cohérente macroscopique à des températures facilement atteignables en laboratoire. Les cavités proposées sont des résonateurs Fabry-Perot ultraminces dans lesquels est inséré un cristal unique d'anthracène. Des miroirs diélectriques sont fabriqués par une compagnie externe. Une couche d'or de 60 nanomètres est ensuite déposée sur leur surface. Les miroirs sont ensuite mis en contact, or contre or, et compressés par 2,6 tonnes de pression. Cette pression soude la cavité et laisse des espaces vides entre les lignes d'or. Une molécule organique, l'anthracène, est ensuite insérée par capillarité dans la cavité et y est cristallisée par la suite. Dans leur état actuel, les cavités présentent des défauts majeurs quant à la planarité des miroirs et à l'uniformité des cristaux. Un protocole détaillé est présenté et commenté dans ce travail. Nous y proposons aussi quelques pistes pour régler les problèmes courants de l'appareil.

Reading and writing PE-files with PERWAPI

PERWAPI is a component for reading and writing .NET PE-files. The name is a compound acronym for Program Executable – Reader/Writer – Application Programming Interface. The code was written by one of us (Diane Corney) with some contributions from some of the early users of the tool. PERWAPI is a managed component, written entirely in safe C#. The design of the writer part of the component is loosely based on Diane Corney’s previous PEAPI component. It is open source software, and is released under a “FreeBSD-like” license. The source may be downloaded from “http://plas.fit.qut.edu.au/perwapi/” As of the date of this document the code has facilities for reading and writing PEfiles compatible with the latest (beta-2) release of the ”Whidbey” version of .NET, that is, the Visual Studio 2005 framework. An invocation option allows earlier versions of the framework to be targeted.

Reading and writing PE-files with PERWAPI

PERWAPI is a component for reading and writing .NET PE-files. The name is a compound acronym for Program Executable – Reader/Writer – Application Programming Interface. The code was written by one of us (Diane Corney) with some contributions from some of the early users of the tool. PERWAPI is a managed component, written entirely in safe C#. The design of the writer part of the component is loosely based on Diane Corney’s previous PEAPI component. It is open source software, and is released under a “FreeBSD-like” license. The source may be downloaded from “http://perwapi.codeplex.com”. As of the date of this document the code has facilities for reading and writing PEfiles compatible with the V2 or later frameworks.

Coherent superposition of exciton states in quantum dots induced by surface plasmons

We present an experimental demonstration of strong optical coupling between CdSequantum dots of different sizes which is induced by a surface plasmon propagating on a planar silver thin film. Attenuated total reflection measurements demonstrate the hybridization of exciton states, characterized by the observation of two avoided crossings in the energy dispersion measured for the interacting system.

Surface plasmon hybridization and exciton coupling

We derive a semianalytical model to describe the interaction of a single photon emitter and a collection of arbitrarily shaped metal nanoparticles. The theory treats the metal nanoparticles classically within the electrostatic eigenmode method, wherein the surface plasmon resonances of collections of nanoparticles are represented by the hybridization of the plasmon modes of the noninteracting particles. The single photon emitter is represented by a quantum mechanical two-level system that exhibits line broadening due to a finite spontaneous decay rate. Plasmon-emitter coupling is described by solving the resulting Bloch equations. We illustrate the theory by studying model systems consisting of a single emitter coupled to one, two, and three nanoparticles, and we also compare the predictions of our model to published experimental data. ©2012 American Physical Society.

Heating mechanism of self-interaction of surface polaritons at n-type semiconductor-metal interface

The influence of electron heating in the high-frequency surface polariton (SP) field on the dispersion properties of the SPs considered is investigated. High frequency SPs propagate at the interface between an n-type semiconductor with finite electron pressure, and a metal. The nonlinear dispersion relation for the SPs is derived and investigated.

Self-interaction of surface polaritons at the narrow-gap n-type semiconductor metal interface

The non-linear self-interaction of the potential surface polaritons (SP) which is due to the free carriers dispersion law where nonparabolicity is studied. The SP propagate at the interface between n-type semiconductor and a metal. The self interaction of the SP is shown to be different in semiconductors with normal and inverse zone structures. The results of the SP field envelope evolution are given. The obtained nonlinear frequency shift has been compared with shifts which are due to another self-interaction mechanisms. This comparison shows that the nonlinear self-interaction mechanism, which is due to free carriers spectrum nonparabolicity, is especially significant in narrow-gap semiconductor materials.