Heating mechanism of self-interaction of surface polaritons at n-type semiconductor-metal interface
| Data(s) |
21/06/1993
|
|---|---|
| Resumo |
The influence of electron heating in the high-frequency surface polariton (SP) field on the dispersion properties of the SPs considered is investigated. High frequency SPs propagate at the interface between an n-type semiconductor with finite electron pressure, and a metal. The nonlinear dispersion relation for the SPs is derived and investigated. |
| Identificador | |
| Publicador |
Elsevier BV * North-Holland |
| Relação |
DOI:10.1016/0375-9601(93)90009-O Ostrikov, K. & Smolin, A.V. (1993) Heating mechanism of self-interaction of surface polaritons at n-type semiconductor-metal interface. Physics Letters. Section A: General, Atomic and Solid State Physics, 177(4-5), pp. 327-330. |
| Direitos |
Copyright 1993 Elsevier BV * North-Holland |
| Fonte |
School of Chemistry, Physics & Mechanical Engineering; Science & Engineering Faculty |
| Tipo |
Journal Article |
