Investigation of bonded hydrogen defects in nanocrystalline diamond films grown with nitrogen/methane/hydrogen plasma at high power conditions

In this work, we investigate the influence of some growth parameters such as high microwave power ranging from 3.0 to 4.0 kW and N2 additive on the incorporation of bonded hydrogen defects in nanocrystalline diamond (NCD) films grown through a small amount of pure N2 addition into conventional 4% CH4/H2 plasma using a 5 kW microwave plasma CVD system. Incorporation form and content of hydrogen point defects in the NCD films produced with pure N2 addition was analyzed by employing Fourier-transform infrared (FTIR) spectroscopy for the first time. A large amount of hydrogen related defects was detected in all the produced NCD films with N2 additive ranging from 29 to 87 µm thick with grain size from 47 nm to 31 nm. Furthermore, a specific new H related sharp absorption peak appears in all the NCD films grown with pure N2/CH4/H2 plasma at high powers and becomes stronger at powers higher than 3.0 kW and is even stronger than the 2920 cm−1 peak, which is commonly found in CVD diamond films. Based on these experimental findings, the role of high power and pure nitrogen addition on the growth of NCD films including hydrogen defect formation is analyzed and discussed.

Phototransistor with nanocrystalline Si/amorphous Si bilayer channel

We report a field-effect phototransistor with a channel comprising a thin nanocrystalline silicon transport layer and a thicker hydrogenated amorphous silicon absorption layer. The semiconductor and dielectric layers were deposited by radio-frequency plasma enhanced chemical vapor deposition. The phototransistor with channel length of 24 microns and photosensitive area of 1.4 mm(2) shows an off-current of about 1 pA, and high photoconductive gain in the subthreshold region. Measurements of the quantum efficiency at different incident light intensities and biasing conditions, along with spectral-response characteristics, and threshold voltage stability characterization demonstrate the feasibility of the phototransistor for low light level detection.

Spektromikroskopische Analyse von Nukleationsdomänen in epitaktischen Diamantschichten auf Ir,SrTiO 3 und von präsolaren SiC-Meteoritenkörnern

Im Rahmen dieser Arbeit wurden zwei verschiedene Systeme untersucht, deren verbindende Gemeinsamkeit in den verwendeten ortsauflösenden, spektroskopischen Messmethoden der Oberflächenanalytik, wie z.B. abbildendes XPS, Röntgennahkanten-Photoemissionsmikroskopie (XANES-PEEM) und Augerspektroskopie (AES) liegt. Im ersten Teil der Arbeit wurden Diamant-Nukleationsdomänen auf Ir/SrTiO3 untersucht und mit vorherrschenden Modellen aus der Literatur verglichen. Die Nukleationsdomänen, wie sie im Mikrowellen-induzierten CVD Prozess unter Verwendung der BEN Prozedur (bias-enhanced nucleation) entstehen, bilden die „Startschicht“ für ein heteroepitaktisches Wachstum einer hoch orientierten Diamantschicht. Sie entwickeln sich aber unter Bedingungen, unter denen 3D-Diamant abgetragen und weggeätzt wird. Mittels XANES-PEEM Messungen konnte erstmals die lokale Bindungsumgebung des Kohlenstoffs in den Nukleationsdomänen ortsaufgelöst aufgezeigt werden und aus AES Messungen ließ sich die Schichtdicke der Nukleationsdomänen abschätzen. Es zeigte sich, dass die Nukleationsdomänen Bereiche mit etwa 1 nm Dicke darstellen, in denen der Übergang von eine sp2-koordinierte amorphen Kohlenstoff- zu einer Diamantschicht mit hohem sp3 Anteil abläuft. Zur Erklärung des Nukleationsprozesses wurde auf das „Clustermodell“ von Lifshitz et al. zurückgegriffen, welches um einen wesentlichen Aspekt erweitert wurde. Die Stabilität der Nukleationsdomänen gegen die Ätzwirkung des Nukleationsprozesses auf Volumendiamant wird durch eine starke Wechselwirkung zwischen dem Diamant und dem Iridiumsubstrat erklärt, wobei die Dicke von etwa 1 nm als Maß für die Ausdehnung dieses Wechselwirkungsbereichs angesehen wird. Der zweite Teil der Arbeit beschäftigt sich mit der Charakterisierung präsolarer SiC-Körner und darin eingeschlossener Spurenelemente. Neben den Hauptelementen Si und C wurden auch Spinelle wie Chromit (FeCr2O4), Korund (Al2O3) und auch verschiedene Spurenelemente (z. B. Al, Ba und Y) nachgewiesen. Ferner wurden XPS-Linien bei Energien nachgewiesen, welche sich den Seltenen Erden Erbium, Thulium und Dysprosium zuordnen lassen. Aufgrund von Abweichungen zur Literatur bzgl. der ausgeprägten Intensität der XPS-Linien, wurde als alternative Erklärungsmöglichkeit für verschiedene Signale der Nachweis von stark schwefelhaltigen Körnern (z.B. so genannte „Fremdlinge“) mit Aufladungen von mehreren Volt diskutiert. Es zeigt sich, dass abbildendes XPS und XANES-PEEM Methoden zur leistungsfähigen chemischen Charakterisierung von SiC-Körnern und anderer solarer und präsolarer Materie im Größenbereich bis herab zu 100 – 200 nm Durchmesser (z.B. als Grundlage für eine spätere massenspektrometrische Isotopenanalyse)darstellen.

Polycrystalline diamond thin film as wide bandgap material: the optoelectronic behaviour and the relationship with the structure

In this work metal - Microwave Plasma CVD diamond Schottky devices were studied. The current density vs. applied voltage reveals rectification ratios up to 10(4) at \ +/- 2V \. Under illumination an inversion and increase of the rectification is observed. The carrier density is 10(15) cm(-3) and the ideality factors near 1.5. The dark current vs. temperature shows that below 150 K the bulk transport is controlled by a hopping process with a density of defects of 10(16) cm(-3). For higher temperatures an extrinsic ionisation with activation energy of 0.3 eV takes place. The correlation with the polycrystalline nature of the samples is focused.

Polycrystalline diamond thin film as wide bandgap material: the optoelectronic behaviour and the relationship with the structure

In this work metal - Microwave Plasma CVD diamond Schottky devices were studied. The current density vs. applied voltage reveals rectification ratios up to 10(4) at \ +/- 2V \. Under illumination an inversion and increase of the rectification is observed. The carrier density is 10(15) cm(-3) and the ideality factors near 1.5. The dark current vs. temperature shows that below 150 K the bulk transport is controlled by a hopping process with a density of defects of 10(16) cm(-3). For higher temperatures an extrinsic ionisation with activation energy of 0.3 eV takes place. The correlation with the polycrystalline nature of the samples is focused.

Influence of substrate surface topography in the deposition of nanostructured diamond-like carbon films by high density plasma chemical vapor deposition

In this work, we have studied the influence of the substrate surface condition on the roughness and the structure of the nanostructured DLC films deposited by High Density Plasma Chemical Vapor Deposition. Four methods were used to modify the silicon wafers surface before starting the deposition processes of the nanostructured DLC films: micro-diamond powder dispersion, micro-graphite powder dispersion, and roughness generation by wet chemical etching and roughness generation by plasma etching. The reference wafer was only submitted to a chemical cleaning. It was possible to see that the final roughness and the sp(3) hybridization degree strongly depend on the substrate surface conditions. The surface roughness was observed by AFM and SEM and the hybridization degree of the DLC films was analyzed by Raman Spectroscopy. In these samples, the final roughness and the sp(3) hybridization quantity depend strongly on the substrate surface condition. Thus, the effects of the substrate surface on the DLC film structure were confirmed. These phenomena can be explained by the fact that the locally higher surface energy and the sharp edges may induce local defects promoting the nanostructured characteristics in the DLC films. (C) 2008 Elsevier B.V. All rights reserved.

Most of the patients presenting myocardial infarction would not be eligible for intensive lipid-lowering based on clinical algorithms or plasma C-reactive protein

Objective: The study we assessed how often patients who are manifesting a myocardial infarction (MI) would not be considered candidates for intensive lipid-lowering therapy based on the current guidelines. Methods: In 355 consecutive patients manifesting ST elevation MI (STEMI), admission plasma C-reactive protein (CRP) was measured and Framingham risk score (FRS), PROCAM risk score, Reynolds risk score, ASSIGN risk score, QRISK, and SCORE algorithms were applied. Cardiac computed tomography and carotid ultrasound were performed to assess the coronary artery calcium score (CAC), carotid intima-media thickness (cIMT) and the presence of carotid plaques. Results: Less than 50% of STEMI patients would be identified as having high risk before the event by any of these algorithms. With the exception of FRS (9%), all other algorithms would assign low risk to about half of the enrolled patients. Plasma CRP was <1.0 mg/L in 70% and >2 mg/L in 14% of the patients. The average cIMT was 0.8 +/- 0.2 mm and only in 24% of patients was >= 1.0 mm. Carotid plaques were found in 74% of patients. CAC > 100 was found in 66% of patients. Adding CAC >100 plus the presence of carotid plaque, a high-risk condition would be identified in 100% of the patients using any of the above mentioned algorithms. Conclusion: More than half of patients manifesting STEMI would not be considered as candidates for intensive preventive therapy by the current clinical algorithms. The addition of anatomical parameters such as CAC and the presence of carotid plaques can substantially reduce the CVD risk underestimation. (C) 2010 Elsevier Ireland Ltd. All rights reserved.

Effect of argon ion energy on the performance of silicon nitridemultilayer permeation barriers grown by hot-wire CVD on polymers

One of the authors (S.M.) acknowledges Direction des Relations Extérieures of Ecole Polytechnique for financial support.

Producción de diamante por CVD (Chemical Vapour Deposition)

A fines de la década del '60 un grupo de investigadores rusos pudo obtener diamante a partir de experimentos con reacciones en fase vapor a bajas presiones de los gases envueltos en el proceso. En 1976 Derjagin et al. mostraron que la nucleación de diamante es posible sobre sustratos de Cu y en 1982 Matsumoto demuestra que la nucleación y crecimiento continuo a bajas presiones de diamante es posible sobre diversos substratos. Las especiales propiedades del diamante (D): dureza, elevado punto de fusión, inercia química, así como elevada conductividad del calor, sonido y de señales ópticas, ubican a este material como una de las prioridades de desarrollo e investigación de grupos de excelencia en el mundo entero. (...) Objetivos Generales y Específicos: El objetivo de este proyecto se basa en la construcción de un reactor para CVD (Chemical Vapour Deposition) y de los elementos auxiliares necesarios para producir diamante sintético por este método. Determinando los parámetros que controlan el proceso: mezcla de gases adecuada, temperatura de substrato, temperatura del plasma, presión parcial de los gases, vacío necesario y otros. En la primera etapa de 2 años se priorizará la puesta a punto del método, para luego pasar al estudio de las diferentes aplicaciones tecnológicas necesarias para la región. Específicamente, en el tercer año se tratará de generar diamantes como recubrimientos para herramientas de corte, así como para trapanos de velocidad, aprovechando residuos para la industria de abrasivos. Los objetivos generales no se cirscuncriben sólo al hecho de montar un reactor en laboratorio para CVD, sino una vez encontrados los parámetros que gobiernan esta técnica, producir diamante sintético para aplicaciones en la industria de herramientas de corte, micrófonos y óptica. Otro objetivo general de importancia es la formación de recursos humanos en técnicas de vacío, ingeniería de superficie y tecnología de plasma a través del personal y de los estudiantes involucrados en el proyecto, así como los participantes en cátedras del Departamento de Mecánica. En cuanto a los objetivos específicos para los dos primeros años, es preparar, construir y poner a punto un reactor de laboratorio de filamento caliente (Hot filament) por tecnología de plasma tipo CVD para obtener diamante sintético a partir de gases.

Thin silicon films ranging from amorphous to nanocrystalline obtained by Hot-Wire CVD

In this paper, we have presented results on silicon thin films deposited by hot-wire CVD at low substrate temperatures (200 °C). Films ranging from amorphous to nanocrystalline were obtained by varying the filament temperature from 1500 to 1800 °C. A crystalline fraction of 50% was obtained for the sample deposited at 1700 °C. The results obtained seemed to indicate that atomic hydrogen plays a leading role in the obtaining of nanocrystalline silicon. The optoelectronic properties of the amorphous material obtained in these conditions are slightly poorer than the ones observed in device-grade films grown by plasma-enhanced CVD due to a higher hydrogen incorporation (13%).

Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD

Hot-Wire Chemical Vapor Deposition has led to microcrystalline silicon solar cell efficiencies similar to those obtained with Plasma Enhanced CVD. The light-induced degradation behavior of microcrystalline silicon solar cells critically depends on the properties of their active layer. In the regime close to the transition to amorphous growth (around 60% of amorphous volume fraction), cells incorporating an intrinsic layer with slightly higher crystalline fraction and [220] preferential orientation are stable after more than 7000 h of AM1.5 light soaking. On the contrary, solar cells whose intrinsic layer has a slightly lower crystalline fraction and random or [111] preferential orientation exhibit clear light-induced degradation effects. A revision of the efficiencies of Hot-Wire deposited microcrystalline silicon solar cells is presented and the potential efficiency of this technology is also evaluated.

Lithography-free micro- and nanostructuring based on conventional plasma etching

In now-a-days semiconductor and MEMS technologies the photolithography is the working horse for fabrication of functional devices. The conventional way (so called Top-Down approach) of microstructuring starts with photolithography, followed by patterning the structures using etching, especially dry etching. The requirements for smaller and hence faster devices lead to decrease of the feature size to the range of several nanometers. However, the production of devices in this scale range needs photolithography equipment, which must overcome the diffraction limit. Therefore, new photolithography techniques have been recently developed, but they are rather expensive and restricted to plane surfaces. Recently a new route has been presented - so-called Bottom-Up approach - where from a single atom or a molecule it is possible to obtain functional devices. This creates new field - Nanotechnology - where one speaks about structures with dimensions 1 - 100 nm, and which has the possibility to replace the conventional photolithography concerning its integral part - the self-assembly. However, this technique requires additional and special equipment and therefore is not yet widely applicable. This work presents a general scheme for the fabrication of silicon and silicon dioxide structures with lateral dimensions of less than 100 nm that avoids high-resolution photolithography processes. For the self-aligned formation of extremely small openings in silicon dioxide layers at in depth sharpened surface structures, the angle dependent etching rate distribution of silicon dioxide against plasma etching with a fluorocarbon gas (CHF3) was exploited. Subsequent anisotropic plasma etching of the silicon substrate material through the perforated silicon dioxide masking layer results in high aspect ratio trenches of approximately the same lateral dimensions. The latter can be reduced and precisely adjusted between 0 and 200 nm by thermal oxidation of the silicon structures owing to the volume expansion of silicon during the oxidation. On the basis of this a technology for the fabrication of SNOM calibration standards is presented. Additionally so-formed trenches were used as a template for CVD deposition of diamond resulting in high aspect ratio diamond knife. A lithography-free method for production of periodic and nonperiodic surface structures using the angular dependence of the etching rate is also presented. It combines the self-assembly of masking particles with the conventional plasma etching techniques known from microelectromechanical system technology. The method is generally applicable to bulk as well as layered materials. In this work, layers of glass spheres of different diameters were assembled on the sample surface forming a mask against plasma etching. Silicon surface structures with periodicity of 500 nm and feature dimensions of 20 nm were produced in this way. Thermal oxidation of the so structured silicon substrate offers the capability to vary the fill factor of the periodic structure owing to the volume expansion during oxidation but also to define silicon dioxide surface structures by selective plasma etching. Similar structures can be simply obtained by structuring silicon dioxide layers on silicon. The method offers a simple route for bridging the Nano- and Microtechnology and moreover, an uncomplicated way for photonic crystal fabrication.

Effects of chronic and acute consumption of fruit- and vegetable-puree-based drinks on vasodilation, risk factors for CVD and the response as a result of the eNOS G298T polymorphism

The average UK adult consumes less than three portions of fruit and vegetables daily, despite evidence to suggest that consuming five portions daily could help prevent chronic diseases. It is recommended that fruit juice should only count as one of these portions, as juicing removes fibre and releases sugars. However, fruit juices contain beneficial compounds such as vitamin C and flavonoids and could be a useful source of dietary phytochemicals. Two randomised controlled cross-over intervention studies investigating the effects of chronic and acute consumption of commercially-available fruit- and vegetable-puree-based drinks (FVPD) on bioavailability, antioxidant status and CVD risk factors are described. Blood and urine samples were collected during both studies and vascular tone was measured using laser Doppler imaging. In the chronic intervention study FVPD consumption was found to significantly increase dietary carotenoids (P = 0.001) and vitamin C (P = 0.003). Plasma carotenoids were increased (P = 0.001), but the increase in plasma vitamin C was not significant. There were no significant effects on oxidative stress, antioxidant status and other CVD risk factors. In the acute intervention study FVPD were found to increase total plasma nitrate and nitrite (P = 0.001) and plasma vitamin C (P = 0.002). There was no effect on plasma lipids or uric acid, but there was a lower glucose and insulin peak concentration after consumption of the FVPD compared with the sugar-matched control. There was a trend towards increased vasodilation following both chronic and acute FVPD consumption. All volunteers were retrospectively genotyped for the eNOS G298T polymorphism and the effect of genotype on the measurements is discussed. Overall, there was a non-significant trend towards increased endothelium-dependent vasodilation following both acute and chronic FVPD consumption. However, there was a significant time x treatment effect (P < 0.05) of acute FVPD consumption in individuals with the GG variant of the eNOS gene.

Effects of chronic consumption of fruit and vegetable puree-based drinks on vasodilation, plasma oxidative stability and antioxidant status

Background: Fruit and vegetable-rich diets are associated with a reduced cardiovascular disease (CVD) risk. This protective effect may be a result of the phytochemicals present within fruits and vegetables (F&V). However, there can be considerable variation in the content of phytochemical composition of whole F&V depending on growing location, cultivar, season and agricultural practices, etc. Therefore, the present study investigated the effects of consuming fruits and vegetables as puree-based drinks (FVPD) daily on vasodilation, phytochemical bioavailability, antioxidant status and other CVD risk factors. FVPD was chosen to provide a standardised source of F&V material that could be delivered from the same batch to all subjects during each treatment arm of the study. Methods: Thirty-nine subjects completed the randomised, controlled, cross-over dietary intervention. Subjects were randomised to consume 200 mL of FVPD (or fruit-flavoured control), daily for 6 weeks with an 8-week washout period between treatments. Dietary intake was measured using two 5-day diet records during each cross-over arm of the study. Blood and urine samples were collected before and after each intervention and vasodilation assessed in 19 subjects using laser Doppler imaging with iontophoresis. Results: FVPD significantly increased dietary vitamin C and carotenoids (P < 0.001), and concomitantly increased plasma α- and β-carotene (P < 0.001) with a near-significant increase in endothelium-dependent vasodilation (P = 0.060). Conclusions: Overall, the findings obtained in the present study showed that FVPD were a useful vehicle to increase fruit and vegetable intake, significantly increasing dietary and plasma phytochemical concentrations with a trend towards increased endothelium-dependent vasodilation.

Associations between flavan-3-ol intake and CVD risk in the Norfolk cohort of the European Prospective Investigation into Cancer (EPIC-Norfolk)

Background: Dietary intervention studies suggest that flavan-3-ol intake can improve vascular function and reduce the risk of cardiovascular diseases (CVD). However, results from prospective studies failed to show a consistent beneficial effect. Objective: To investigate associations between flavan-3-ol intake and CVD risk in the Norfolk arm of the European Prospective Investigation into Cancer and Nutrition (EPIC-Norfolk). Design: Data was available from 24,885 (11,252 men; 13,633 women) participants, recruited between 1993 and 1997 into the EPIC-Norfolk study. Flavan-3-ol intake was assessed using 7-day food diaries and the FLAVIOLA Flavanol Food Composition database. Missing data for plasma cholesterol and vitamin C were imputed using multiple imputation. Associations between flavan-3-ol intake and blood pressure at baseline were determined using linear regression models. Associations with CVD risk were estimated using Cox regression analyses. Results: Median intake of total flavan-3-ols was 1034 mg/d (range: 0 – 8531 mg/d) for men and 970 mg/d (0 – 6695 mg/d) for women, median intake of flavan-3-ol monomers was 233 mg/d (0 – 3248 mg/d) for men and 217 (0 – 2712 mg/d) for women. There were no consistent associations between flavan-3-ol monomer intake and baseline systolic and diastolic blood pressure (BP). After 286,147 person-years of follow up, there were 8463 cardio-vascular events and 1987 CVD related deaths; no consistent association between flavan-3-ol intake and CVD risk (HR 0.93, 95% CI:0.87; 1.00; Q1 vs Q5) or mortality was observed (HR 0.93, 95% CI: 0.84; 1.04). Conclusions: Flavan-3-ol intake in EPIC-Norfolk is not sufficient to achieve a statistically significant reduction in CVD risk.