Anisotropic crystallographic properties, strain, and their effects on band structure of m -plane GaN on LiAlO2 (100)

The m-plane GaN films grown on LiAlO2(100) by metal-organic chemical vapor deposition exhibit anisotropic crystallographic properties. The Williamson-Hall plots point out they are due to the different tilts and lateral correlation lengths of mosaic blocks parallel and perpendicular to GaN[0001] in the growth plane. The symmetric and asymmetric reciprocal space maps reveal the strain of m-plane GaN to be biaxial in-plane compress epsilon(xx)=-0.79% and epsilon(zz)=-0.14% with an out-of-plane dilatation epsilon(yy)=0.38%. This anisotropic strain further separates the energy levels of top valence band at Gamma point. The energy splitting as 37 meV as well as in-plane polarization anisotropy for transitions are found by the polarized photoluminescence spectra at room temperature. (c) 2008 American Institute of Physics.

Imaging and optical properties of single core-shell GaAs-AlGaAs nanowires

We study the optical properties of a single core-shell GaAs-AlGaAs nanowire (grown by VLS method) using the technique of micro-photoluminescence and spatially-resolved photoluminescence imaging. We observe large linear polarization anisotropy in emission and excitation of nanowires.

Uniaxial Strain Effects on Optical Properties of c-plane Wurtzite GaN

We investigate the uniaxial strain effect in the c-plane on optical properties of wurtzite GaN based on k center dot p theory, the spin-orbit interactions are also taken into account. The energy dispersions show that the uniaxial strain in the c-plane gives an anisotropic energy splitting in the k(x) - k(y) plane, which can reduce the density of states. The uniaxial strain also results in giant in-plane optical polarization anisotropy, hence causes the threshold carrier density reduced. We clarify the relations between the uniaxial strain and the optical polarization properties. As a result, it is suggested that the compressive uniaxial strain perpendicular to the laser cavity direction in the c-plane is one of the preferable approaches for the effcient improvement of GaN-based laser performance.

Optical study of lateral carrier transfer in (In,Ga)As/GaAs quantum-dot chains

We have studied the lateral carrier transfer in a specially designed quantum dot chain structure by means of time-resolved photoluminescence (PL) and polarization PL. The PL decay time increases with temperature, following the T-1/2 law for the typical one-dimensional quantum system. The decay time depends strongly on the emission energy: it decreases as the photon energy increases. Moreover, a strong polarization anisotropy is observed. These results are attributed to the efficient lateral transfer of carriers along the chain direction. (c) 2008 American Institute of Physics.

Optical properties of GaN wurtzite quantum wires

The electronic structure and optical properties of freestanding GaN wurtzite quantum wires are studied in the framework of six-band effective-mass envelope function theory. It is found that the electron states are either twofold or fourfold degenerate. There is a dark exciton effect when the radius R of GaN wurtzite quantum wires is in the range of [0.7, 10.9] nm. The linear polarization factors are calculated in three cases, the quantum confinement effect (finite long wire), the dielectric effect and both effects (infinitely long wire). It is found that the linear polarization factor of a finite long wire whose length is much less than the electromagnetic wavelength decreases as R increases, is very close to unity (0.979) at R = I nm, and changes from a positive value to a negative value around R = 4.1 nm. The linear polarization factor of the dielectric effect is 0.934, independent of radius, as long as the radius remains much less than the electromagnetic wavelength. The result for the two effects shows that the quantum confinement effect gives a correction to the dielectric effect result. It is found that the linear polarization factor of very long (treated approximately as infinitely long) quantum wires is in the range of [0.8, 1]. The linear polarization factors of the quantum confinement effect of CdSe wurtzite quantum wires are calculated for comparison. In the CdSe case, the linear polarization factor of R = I nm is 0.857, in agreement with the experimental results (Hu et al 2001 Science 292 2060). This value is much smaller than unity, unlike 0.979 in the GaN case, mainly due to the big spin-orbit splitting energy Delta(so) of CdSe material with wurtzite structure.

Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires

Morphology evolution of high-index GaAs(331)A surfaces during molecular beam epitaxy (MBE) growth has been investigated in order to achieve regularly distributed step-array templates and fabricate spatially ordered low-dimensional nano-structures. Atomic force microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature. By using the step arrays formed on GaAs(331)A surfaces as the templates, we have fabricated highly ordered InGaAs nanowires. The improved homogeneity and the increased density of the InGaAs nanowires are attributed to the modulated strain field caused by vertical multi-stacking, as well as the effect of corrugated surface of the template. Photoluminescence (PL) tests confirmed remarkable polarization anisotropy.

Exciton localization in In0.15Ga0.85As/GaAs quantum wire structures grown on (553)B-oriented GaAs substrate

Using time-resolved photoluminescence (PL) measurements, we have studied the exciton localization effect in InGaAs/GaAs quantum wire (QWR) structures formed in corrugated narrow InGaAs/GaAs quantum wells (QWs) grown on (553)B GaAs substrate. The PL decay time in the QWR structure was found to be independent of the temperature for T < 70 K, showing a typical dynamical behavior of the localized excitons. This result is in striking contrast to the corresponding quantum well structures, where a linear increase of the PL decay time was observed. In addition, an increase of the exciton lifetime was observed at low temperature for the QWR structure as compared to a reference InGaAs/GaAs quantum well sample (1200 vs 400 ps). The observed longer decay time was attributed to the reduction in the spatial coherence of excitons in the QWR-like structure. In PL measurements, a significant polarization anisotropy was also found in our narrow InGaAs/GaAs QWs grown on (553)B GaAs. (C) 2001 American Institute of Physics.

ELECTRONIC-STRUCTURES OF QUANTUM WIRES FORMED BY LATERAL STRAIN

The electronic structures of quantum wires formed by lateral strain are studied in the framework of the effective-mass envelope-function method. The hole energy levels, wave functions, and optical transition matrix elements are calculated for the real quantum-wire structure, and the results are compared with experiment. It is found that one-dimensional confinement effects exist for both electronic and hole states related to the n (001) = 1 state. The lateral strained confinement causes luminescence-peak redshifts and polarization anisotropy, and the anisotropy is more noticeable than that in the unstrained case. The variation of hole energy levels with well widths in the [110] and [001] directions and wave vector along the [110BAR] direction are also obtained.

Femtosecond wavepacket interferometry using the rotational dynamics of a trapped cold molecular ion

A Ramsey-type interferometer is suggested, employing a cold trapped ion and two time-delayed offresonant femtosecond laser pulses. The laser light couples to the molecular polarization anisotropy, inducing rotational wavepacket dynamics. An interferogram is obtained from the delay dependent populations of the final field-free rotational states. Current experimental capabilities for cooling and preparation of the initial state are found to yield an interferogram visibility of more than 80%. The interferograms can be used to determine the polarizability anisotropy with an accuracy of about ±2%, respectively ±5%, provided the uncertainty in the initial populations and measurement errors are confined to within the same limits.

Interactions of gold nanoparticles with polymeric membranes

This thesis focuses on the interactions of nanoparticles with artificial membranes. The synthesis of the block copolymer poly(dimethylsiloxane)-block-poly(2-methyloxazoline) (PDMS-b-PMOXA) is described, as well as the formation of polymersomes in water. These polymersomes act as minimal cell models, consisting of an artificial bilayer membrane only, allowing the study of the interactions between nanoparticles and polymeric membranes. Both spherical and rod-shaped gold nanoparticles (AuNPs) were used in this study and they were characterized using light scattering (PCS), transmission electron microscopy (TEM), UV/Vis spectroscopy, and polarization anisotropy measurements. The polymer grafting on the spherical cores is asymmetric (shell asphericity) but is parallel to the inherent, due to polycrystallinity, core anisotropy, resulting in a characteristic scattering of the AuNPs in PCS.rnInteractions of polymersomes and AuNPs were investigated by PCS, cryo-TEM and UV/Vis. Three possible scenarios upon mixing of polymersomes and AuNPs can be distinguished by using only PCS: (i) no interactions between particles and vesicles, (ii) attachment of the particles to the outer side of the vesicles (decoration), and (iii) uptake of particles into the vesicles. It is shown that all three scenarios are possible, solely depending on the particle’s surface functionalization. In addition, it was revealed that the AuNPs need to be attached to the inner side of the membrane instead of diffusing freely within the vesicle. The present experimental findings essentially help with the understanding of the interactions of nanoparticles with membranes and show that the process of endocytosis can be attributed to physical processes only. rn

High bandwidth freestanding semipolar (11–22) InGaN/GaN light-emitting diodes

Freestanding semipolar (11–22) indium gallium nitride (InGaN) multiplequantum-well light-emitting diodes (LEDs) emitting at 445 nm have been realized by the use of laser lift-off (LLO) of the LEDs from a 50- m-thick GaN layer grown on a patterned (10–12) r -plane sapphire substrate (PSS). The GaN grooves originating from the growth on PSS were removed by chemical mechanical polishing. The 300 m × 300 m LEDs showed a turn-on voltage of 3.6 V and an output power through the smooth substrate of 0.87 mW at 20 mA. The electroluminescence spectrum of LEDs before and after LLO showed a stronger emission intensity along the [11–23]InGaN/GaN direction. The polarization anisotropy is independent of the GaN grooves, with a measured value of 0.14. The bandwidth of the LEDs is in excess of 150 MHz at 20 mA, and back-to-back transmission of 300 Mbps is demonstrated, making these devices suitable for visible light communication (VLC) applications.

Polarization patterns control based on photoinduced anisotropy of photochromic fulgide

We investigate the photoinduced anisotropy of a photochromic material of pyrrylfulgide/PMMA films. It is proven that when the film is illuminated with a linear polarization light, an optical axis that has the same polarization as the excitation light could be induced in the film. A matrix of light spots with different polarizations is recorded on the pyrrylfulgide/PMMA film. When reading out with non-polarization light, the matrix of light spots shows no information of patterns. However, when reading out with different linear polarization lights, different patterns could be observed. The experiment confirms that the pyrrylfulgide/PMMA film could be used to record two different polarization patterns in a matrix of spots. This property may be applied in camouflage technology.

Polarization patterns hide and display using photoinduced anisotropy of photochromic fulgide

Photoinduced anisotropy of a photochromic pyrrylfulgide/PMMA film was investigated by using two linearly polarized beams. Excitation by linearly polarized light induces into the film an optical axis that has the same polarization as the excitation beam. This causes a change of the transmittance and of the polarization state of the detection beam. With a microscope a matrix of 4x4 light spots with different polarizations were recorded in the pyrrylfulgide/PMMA film. If readout with non-polarized light, the matrix of light spots show no information pattern. However, when readout with differently polarized lights, different patterns can be displayed. The experiment demonstrates that pyrrylfulgide/PMMA films can be used to hide two differently polarized patterns, which may be applied in camouflage technology. (C) 2005 Optical Society of America.