A Reactive Inverse PN Algorithm for Collision Avoidance among Multiple Unmanned Aerial Vehicles

While performing a mission, multiple Unmanned Aerial Vehicles (UAVs) need to avoid each other to prevent collisions among them. In this paper, we design a collision avoidance algorithm to resolve the conflict among UAVs that are on a collision course while flying to heir respective destinations. The collision avoidance algorithm consist of each UAV that is on a collision course reactively executing a maneuver that will, as in `inverse' Proportional Navigation (PN), increase Line of Sight (LOS) rate between them, resulting in a `pulling out' of collision course. The algorithm is tested for high density traffic scenarios as well as for robustness in the presence of noise.

Organometallic chemistry of diphosphazanes .13. Palladium complexes of unsymmetrical diphosphazanes Ph(2)PN(Pr-i)PYY'

Unsymmetrical diphosphazanes Ph(2)PN(Pr-i)PYY' [YY' = O2C12H8 (L(1)), O2C20H12 (L(2)); Y = Ph and Y' = OC6H4Br-4 (L(3)), OC(6)H(4)Me-4 (L(4)), OC(6)H(3)Me(2)-3,5 (L(5)), N(2)C(3)HMe(2)-3,5 (L(6))] react with cis-[PdCl2(COD)] (COD = cycloocta-1,5-diene) giving the chelate complexes of the type cis-[PdCl2{eta(2)-Ph(2)PN(Pr-i)PYY'}] [YY' = O2C12H8 (1), O2C20H12 (2), Y = Ph and Y' = OC6H4Br-4 (3), OC(6)H(4)Me-4 (4), OC(6)H(3)Me(2)-3,5 (5), N(2)C(3)HMe(2)-3,5 (6)]. The P-N bond in 3 and 5 undergoes a facile cleavage in methanol solution to give cis-[PdCl2{eta(1)Ph(2)P(OMe)}{eta(1)-PhP(NHPri)(Y')}] [Y' = OC6H4Br-4 (7), OC(6)H(3)Me(2)-3,5 (8)]. Reactions of Pd-2(dba)(3) . CHCl3 (dba = dibenzylideneacetone) with the diphosphazanes Ph(2)PN(Pr-i)PPhY' [Y' = OC(6)H(4)Me-4 (L(4)), N(2)C(3)HMe(2)-3,5 (L(6)), N2C3H3 (L(7))] in the presence of MeI yields cis-[PdI2{eta(2)-Ph(2)PN(Pr-i)PPhMe}] (9); the P-O or P-N(pyrazolyl) bond of the starting ligands is cleaved and a p-C(Me) bond is formed. An analogous oxidative addition reaction in the presence of Ph(2)PN(Pr-i)PPh(2) (L(8)) yields cis-[PdI(Me)(eta(2)-L(8))] (10) and cis-[PdI2(eta 2-L(8))] (11). The structures of 8 and 9 have been determined by X-ray diffraction. Copyright (C) 1996 Elsevier Science Ltd

Three dimensional PN based impact angle control for higher speed nonmaneuvering targets

Terminal impact angle control is crucial for enhancement of warhead effectiveness. In the literature, this problem has been addressed in the context of targets with lower speeds than the interceptor. However, in the current defence scenario, targets of much higher speed than the interceptor is a reality. This paper presents a generic proportional navigation (PN) based guidance law, that uses the standard PN and novel Retro-PN guidance laws based on the initial engagement geometry and terminal engagement requirements, for three dimensional engagement scenario against higher speed nonmaneuvering targets to control terminal impact angle. Results are obtained on the set of achievable impact angles and conditions on the navigation constant to achieve them. Simulation results are given to support the theoretical findings.

Biased PN based impact angle constrained guidance using a nonlinear engagement model

Impact angle constrained guidance laws are important in many applications such as guidance of torpedoes, anti-ballistic missiles and reentry vehicles. In this paper, we design a guidance law which is capable of achieving a wide range of impact angles. Biased proportional navigation guidance uses a bias term in addition to the basic PN command to satisfy additional constraints. Angle constrained BPNG (ACBPNG) uses small angle approximations to derive the bias term for impact angle requirement. We design a modified ACBPNG (MACBPNG) where the required bias term is derived in a closed form considering non-linear equations of motion. Simulations are carried out for a wide range of impact angle requirements. We also analyze capturability from different initial positions and also the launch angles possible at each initial position. The performance of the proposed law is compared with an existing law.

Capturability Analysis of a 3-D Retro-PN Guidance Law for Higher Speed Nonmaneuvering Targets

This brief presents the capturability analysis of a 3-D Retro-proportional navigation (Retro-PN) guidance law, which uses a negative navigation constant (as against the usual positive one), for intercepting targets having higher speeds than interceptors. This modification makes it possible to achieve collision conditions that were inaccessible to the standard PN law. A modified polar coordinate system, that makes the model more compact, is used in this brief for capturability analysis. In addition to the ratio of the target to interceptor speeds, the directional cosines of the interceptor, and target velocity vectors play a crucial role in the capturability. The existence of nontrivial capture zone of the Retro-PN guidance law and necessary and sufficient conditions, for capturing the target in finite time, are presented. A sufficient condition on the navigation constant is derived to ensure finiteness of the line-of-sight turn rate. The results are more extensive than those available for 2-D engagements, which can be obtained as special cases of this brief. Simulation results are given to support the analytical results.

An Algorithmic Characterization of Polynomial Functions over Z(pn)

In this paper we consider polynomial representability of functions defined over , where p is a prime and n is a positive integer. Our aim is to provide an algorithmic characterization that (i) answers the decision problem: to determine whether a given function over is polynomially representable or not, and (ii) finds the polynomial if it is polynomially representable. The previous characterizations given by Kempner (Trans. Am. Math. Soc. 22(2):240-266, 1921) and Carlitz (Acta Arith. 9(1), 67-78, 1964) are existential in nature and only lead to an exhaustive search method, i.e. algorithm with complexity exponential in size of the input. Our characterization leads to an algorithm whose running time is linear in size of input. We also extend our result to the multivariate case.

一种减小Mg记忆效应的GaN基pn结的生长方法

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Electroluminescence from nano-crystalline Si/SiO2 structures embedded in pn junctions

Phosphorous-doped and boron-doped amorphous Si thin films as well as amorphous SiO2/Si/SiO2 sandwiched structures were prepared in a plasma enhanced chemical vapor deposition system. Then, the p-i-n structures containing nano-crystalline Si/SiO2 sandwiched structures as the intrinsic layer were prepared in situ followed by thermal annealing. Electroluminescence spectra were measured at room temperature under forward bias, and it is found that the electroluminescence intensity is strongly influenced by the types of substrate. The turn-on voltages can be reduced to 3 V for samples prepared on heavily doped p-type Si (p(+)-Si) substrates and the corresponding electroluminescence intensity is more than two orders of magnitude stronger than that on lightly doped p-type Si (p-Si) and ITO glass substrates. The improvements of light emission can be ascribed to enhanced hole injection and the consequent recombination of electron-hole pairs in the luminescent nanocrystalline Si/SiO2 system. (C) 2008 Elsevier Ltd. All rights reserved.

Silicon waveguide modulator based on carrier depletion in periodically interleaved PN junctions

We present the design and numerical simulation results for a silicon waveguide modulator based on carrier depletion in a linear array of periodically interleaved PN junctions that are oriented perpendicular to the light propagation direction. In this geometry the overlap of the optical waveguide mode with the depletion region is much larger than in designs using a single PN junction aligned parallel to the waveguide propagation direction. Simulations predict that an optimized modulator will have a high modulation efficiency of 0.56 V.cm for a 3V bias, with a 3 dB frequency bandwidth of over 40 GHz. This device has a length of 1.86 mm with a maximum intrinsic loss of 4.3 dB at 0V bias, due to free carrier absorption. (C) 2009 Optical Society of America

New annealing processes and explanation for novel silicon pn junctions formed by proton implantation

Proton-implanted n-type Si wafers were annealed at 950 degrees C to achieve novel pn junctions. The novel pn junctions are explained by the combined use of four models. The background (e.g. oxygen impurity) of an Si wafer is suggested to play a key role in creating the novel pn junction.

6H-SiC高反压台面pn结二极管

在可商业获得的单晶6H-SiC晶片上，通过化学气相淀积，进行同质外延生长；并在此6H-SiC结构材料上，利用反应离子刻蚀和接触合金化技术，制作台面pn结二极管。详细测量并分析了器件的电学特性，测量结果表明此6H-SiC二极管在室温、空气介质中，-10V时，漏电流密度为2.4×10~(-8)A/cm~2，在反向电压低于600V及接近300℃高温下都具有良好的整流特性。

THEORETICAL STUDY ON pp -> pn pi(+) REACTION AT MEDIUM ENERGIES

The pp -> pn pi(+) reaction is a channel with the largest total cross section for pp collision in COSY/CSR energy region. In this work, we investigate individual contributions from various N* and Delta* resonances with mass up to about 2 GeV for the pp -> pn pi(+) reaction. We extend a resonance model, which can reproduce the observed total cross section quite well, to give theoretical predictions of various differential cross sections for the present reaction at T-p = 2.88 GeV. It could serve as a reference for identifying new physics in the future experiments at HIRFL-CSR.

Evidence of N-*(1535) resonance contribution in the pn -> d phi reaction

The N ∗(1535) resonance contributions to the pn → dφ reaction are evaluated in an effective Lagrangian model. The π-, η-, and ρ-meson exchange are considered. It is shown that the contributions from π- and ρ-meson exchange are dominant, while the contribution from η-meson exchange is negligibly small. Our theoretical results reproduce the experimental data of both total cross section and angular distribution well. This is more evidence that the N ∗(1535) resonance has a large s ¯s component leading to a large coupling to Nφ, which may be the real origin of the Okubo-Zweig-Iizuka rule violation in the πN and pN reactions.