971 resultados para PD-AG


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Pd-Au/C and Pd-Ag/C were found to have a unique characteristic of evolving high-quality hydrogen dramatically and steadily from the catalyzed decomposition of liquid formic acid at convenient temperature, and further this was improved by the addition of CeO2(H2O)(x).

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A Pd-Ag (24 wt%) alloy composite membrane was prepared by the magnetron sputtering. A gamma-Al2O3 membrane was synthesized by the sol-gel method and used as substrate of the Pd-Ag alloy film. The process parameters of the magnetron sputtering were optimized as a function of the compactness of the Pd-Ag alloy film. The best membrane with a thickness of 1 mu m was produced with a sputtering pressure of 2.7 Pa and a substrate temperature of 400 degrees C. The membrane had an H-2/N-2 permselectivity of 51.5-1000 and an H-2 permeation rate of 0.036-1.17 x 10(-5)cm(3)/cm(2).s. Pa, depending on operating conditions.

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The aim of this work was to evaluate the corrosion resistance of AuPdAgIn alloy, submitted to laser beam welding, in 0.9% NaCl solution, using electrochemical techniques. Measures of the open circuit potential (OCP) versus time were applied to electrochemical experiments, as well as potentiodynamic direct scanning (PDS) and electrochemical impedance spectroscopy (EIS) on AuPdAgIn alloy, submitted to laser beam welding in 0.9% NaCl solution. Some differences observed in the microstructure can explain the results obtained for corrosion potential, Ecorr, and corrosion resistance, Rp. EIS spectra have been characterized by distorted capacitive components, presenting linear impedance at low frequencies, including a non-uniform diffusion. The area of the laser weld presented corrosion potential slightly superior when compared to the one of the base metal. The impedance results suggest the best resistant corrosion behavior for laser weld than base metal region. This welding process is a promising alternative to dental prostheses casting.

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The metallization stack Ti/Pd/Ag on n-type Si has been readily used in solar cells due to its low metal/semiconductor specific contact resistance, very high sheet conductance, bondability, long-term durability, and cost-effectiveness. In this study, the use of Ti/Pd/Ag metallization on n-type GaAs is examined, targeting electronic devices that need to handle high current densities and with grid-like contacts with limited surface coverage (i.e., solar cells, lasers, or light emitting diodes). Ti/Pd/Ag (50 nm/50 nm/1000 nm) metal layers were deposited on n-type GaAs by electron beam evaporation and the contact quality was assessed for different doping levels (from 1.3 × 1018 cm−3 to 1.6 × 1019 cm−3) and annealing temperatures (from 300°C to 750°C). The metal/semiconductor specific contact resistance, metal resistivity, and the morphology of the contacts were studied. The results show that samples doped in the range of 1018 cm−3 had Schottky-like I–V characteristics and only samples doped 1.6 × 1019 cm−3 exhibited ohmic behavior even before annealing. For the ohmic contacts, increasing annealing temperature causes a decrease in the specific contact resistance (ρ c,Ti/Pd/Ag ~ 5 × 10−4 Ω cm2). In regard to the metal resistivity, Ti/Pd/Ag metallization presents a very good metal conductivity for samples treated below 500°C (ρ M,Ti/Pd/Ag ~ 2.3 × 10−6 Ω cm); however, for samples treated at 750°C, metal resistivity is strongly degraded due to morphological degradation and contamination in the silver overlayer. As compared to the classic AuGe/Ni/Au metal system, the Ti/Pd/Ag system shows higher metal/semiconductor specific contact resistance and one order of magnitude lower metal resistivity.

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Metal-ion (Ag, Co, Ni, and Pd) doped TiO2 nanocatalysts were successfully embedded on carbon-covered alumina supports. The CCA-embedded catalysts were crystalline and had a high surface area compared to the free metal-ion doped titania nanocatalysts while they still retained the anatase phase of the core TiO2. These catalysts were photocatalytically active under solar light irradiation. Rhodamine B was used as a model pollutant and the reactivity followed a pseudo-first-order reaction kinetics. The reaction rate of the CCA-supported catalysts was Pd > Ag > Co > Ni. Among the ratios of the CCA:catalyst used, it was found that the 1:1 ratio had the fastest reaction rate, followed by the 1:2 ratio, while the 2:1 ratio exhibited the lowest reaction rate. The CCA/metal-ion doped titania were found to have photocatalytic activities comparable with those of CCA-supported titania.

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We report a new protocol for the synthesis of M@rGO (M = Au, Pt, Pd, Ag and rGO = reduced graphene oxide) hybrid nanostructures at room temperature in Zn-acid medium. The roles of Zn-acid are to reduce the GO by generated hydrogen and the deposition of metal nanoparticles on rGO by galvanic replacement reaction between Zn and Mn+.

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Large-scale arrays consist of dendritic single-crystalline Ag/Pd alloy nanostructures are synthesized for the first time. A simple galvanic replacement reaction is introduced to grow these arrays directly on Ag substrates. The morphology of the products strongly depended on the reaction temperature and the concentration of H2PdCl4 solution. The mechanism of the formation of alloy and the dendritic morphology has been discussed. These alloy arrays exhibit high surface-enhanced Raman scattering (SERS) activity and may have potential applications in investigation of "in situ" Pd catalytic reactions using SERS. Moreover, electrocatalytic measurements suggest that the obtained dendritic Ag/Pd alloy nanostructures exhibit electrocatytic activity toward the oxidation of formic acid.

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In order to improve the sulfur resistance of noble metal catalysts in the aromatic hydrogenation of diesel fuel, the alloying effect of non-noble metals with Pd was studied. Toluene hydrogenation over Pd and Pd-M bimetallic catalysts (M = Cr, W,La, Mn, Mo, Ag) on a mixed HY-Al2O3 support was investigated in the presence of 3000 ppm sulfur as thiophene in the feedstock. The results showed that the addition of the second metals strongly affected the activity of toluene hydrogenation, which suggests that the sulfur resistibility of Pd-M bimetallic catalysts is much different from single Pd. La, Mn, Mo and Ag decreased the sulfur resistance of the palladium catalysts. For example, the toluene conversion at 553 K was observed to decrease sharply from 39.4 wt.% on Pd to 1.6 wt.% on Pd-Ag, which is by a factor of 25. One of the important findings in this article is that Cr and W increase hydrogenation activity of Pd catalysts. The reactions occurring on these catalysts include hydrogenation, isomerization and hydrocracking, The addition of the second metals has no noticeable effects on the hydrogenation and isomerization selectivity, but it slightly suppresses hydrocracking reactions. The four typical catalysts, Pd-Cr, Pd-W, Pd-Ag and Pd were characterized by infrared (IR) spectroscopy of pyridine and CO. LR spectra of CO revealed the strong interaction between Pd and the second metal as Cr, W and Ag (or their oxide), indicating that the improvement in sulfur resistance originates from electron-deficient Pd with the addition of second metals. (C) 2001 Elsevier Science B.V. All rights reserved.

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Boron-modified Pd catalysts have shown excellent performance for the selective hydrogenation of alkynes experimentally. In the current work, we investigated the hydrogenation of acetylene on boron-modified Pd(111) and Pd(211) surfaces, utilizing density functional theory calculations. The activity of acetylene hydrogenation has been studied by estimating the effective barrier of the whole process. The selectivity of ethylene formation is investigated from a comparison between the desorption and the hydrogenation of ethylene as well as comparison between the ethylene and the 1,3-butadiene formation. Formation of subsurface carbon and hydrogen on both boron-modified Pd(111) and Pd(211) surfaces has also been evaluated, since these have been reported to affect both the activity and the selectivity of acetylene hydrogenation to produce ethylene on Pd surfaces. Our results provide some important insights into the Pd B catalysts for selective hydrogenation of acetylene and also for more complex hydrogenation systems, such as stereoselective hydrogenation of longer chain alkynes and selective hydrogenation of vegetable oil.

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· S'ha preparat i caracteritzat una família de complexos de Cu(III) contenint lligands triazamacrocíclics, estudiant-se les seves propietats estructurals, espectroscòpiques i redox. Aquesta àmplia família de complexos tenen un gran interès perquè permeten descriure les propietats dels complexos de Cu en un estat d'oxidació poc habitual i a més ens han permès mesurar de manera quantitativa l'efecte Meyerstein. · Una nova família de complexos de Cu(I) amb els lligands triazamacrocíclics es sintetitzada i caracteritzada per tècniques espectroscòpiques i estructurals, demostrant que aquests complexos presenten diferents estructures a l'estat sòlid i en dissolució. Així doncs, mentre que en dissolució es demostra per RMN que es tracta d'una espècie monomèrica, la determinació estructural per difracció de raigs X d'aquests complexos de Cu(I), ens confirma la formació d'espècies polimèriques. Per altra banda, s'ha estudiat la seva reactivitat; a) la seva implicació en la formació de lligands deuterats mitjançant l'intercanvi H/D en condicions suaus i b) la formació de complexos bisfenoxo a partir de la reactivitat entre els corresponents complexos de Cu(I) i oxigen molecular. De la mateixa manera, s'ha preparat el corresponent anàleg de Ag(I) en estat sòlid, obtenint la formació d'un polímer de Ag(I), el qual presenta a l'estat sòlid una estructura en forma de ziga-zaga, diferent a l'estructura del polímer de Cu(I), que és lineal. · S'ha determinat i proposat el mecanisme que té lloc en l'activació de l'enllaç C-H i posterior reacció de transferència per tal d'estabilitzar els productes finals mitjançant una reacció de desproporció. El seguiment de la reacció té lloc mitjançant tècniques espectroscòpiques com UV-vis. Dit seguiment, ens permet determinar les diferents influències electròniques sobre la reacció de formació dels complexos organometàl·lics de Cu(III). A més a més, el seguiment de la reacció a baixa temperatura ens permet determinar espectroscòpica i teòricament la formació d'un intermedi de Cu(II), i mitjançant la determinació dels paràmetres cinètics i termodinàmics es proposa un mecanisme de reacció. Posteriorment, s'ha assajat la reactivitat d'una sal de Cu(II) amb un lligand macrocíclic que conté un grup metil en el carboni orientat cap al centre del macrocicle, implicant la formació d'un intermedi agòstic. De la determinació estructural d'aquest intermedi de CuII i del lligand protonat, s'extreuen una sèrie de conclusions molt interessants, com són la demostració estructural de l'activació de l'enllaç C-C en la primera etapa de formació i de manera anàloga poder comparar-ho amb els sistemes macrocíclics HL2-HL6, demostrant la possible formació d'un intermedi agòstic, on es produeix l'activació de l'enllaç C-H. Aquesta similitud estaria d'acord amb els sistemes HL2-HL6, els quals espectroscòpica i teòricament s'havia detectat la presència d'un intermedi de característiques similars. Degut a l'acidesa d'aquest protó, i gràcies a la presència d'una base com és el propi lligand, aquest podia ésser extret donant lloc a la formació dels corresponents organometàl·lics de Cu(III). Dita estructura també representa un dels pocs exemples d'un organometàl·lic de CuII, un estat d'oxidació poc conegut dins d'aquest camp. · S'ha descrit la reactivitat dels nous complexos organometàl·lics de Cu(III), els quals sota medi pròtic i en condicions àcides o neutres són espècies totalment estables, però en condicions bàsiques o reductores aquestes espècies reaccionen donant lloc a la formació de noves espècies de tipus bisfenoxo, on el Cu es troba en estat d'oxidació +2. S'han caracteritzat mitjançant difracció de RX, on es s'observa l'entorn químic del Cu, la geometria del complex bisfenoxo i l'hidroxilació de l'anell aromàtic. · Finalment, s'ha descrit per primera vegada la síntesi i caracterització d'uns nous complexos organometàl·lics de Ni. Aquests són sintetitzats en base als càlculs teòrics realitzats sobre els nostres sistemes macrocíclics. Per aquests complexos hem investigat l'efecte del metall, canviant el coure per altres metalls de la primera sèrie de transició (Mn, Fe, Co, Ni, Cu, Zn) i de la segona sèrie de transició (Ru, Rh, Pd, Ag). Els resultats demostren que el Ni(II), és el metall que presenta una major capacitat de l'activació de l'enllaç C-H en aquests sistemes aromàtics. Aquests compostos s'oxiden lentament cap a complexos de Ni(III). Per altra banda, l'addició d'una sal de clor sobre una solució d'un complex de Ni(II) permet aïllar el corresponent complex de Ni(III), caracteritzat per ressonància de spin electrònic

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The creation of electrocatalysts based on noble metals has received a significant amount of research interest due to their extensive use as fuel cell catalysts and electrochemical sensors. There have been many attempts to improve the activity of these metals through creating nanostructures, as well as post-synthesis treatments based on chemical, electrochemical, sonochemical and thermal approaches. In many instances these methods result in a material with active surface states, which can be considered to be adatoms or clusters of atoms on the surface that have a low lattice co-ordination number making them more prone to electrochemical oxidation at a wide range of potentials that are significantly less positive than those of their bulk metal counterparts. This phenomenon has been termed pre-monolayer oxidation and has been reported to occur on a range of metallic surfaces. In this work we present findings on the presence of active sites on Pd that has been: evaporated as a thin film; electrodeposited as nanostructures; as well as commercially available Pd nanoparticles supported on carbon. Significantly, advantage is taken of the low oxidation potential of these active sites whereby bimetallic surfaces are created by the spontaneous deposition of Ag from AgNO3 to generate Pd/Ag surfaces. Interestingly this approach does not increase the surface area of the original metal but has significant implications for its further use as an electrode material. It results in the inhibition or promotion of electrocatalytic activity which is highly dependent on the reaction of interest. As a general approach the decoration of active catalytic materials with less active metals for a particular reaction also opens up the possibility of investigating the role of the initially present active sites on the surface and identifying the degree to which they are responsible for electrocatalytic activity.

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Adsorption of oxygen on Ni, Cu, Pd, Ag, and Au surfaces has been investigated by employing UV and X-ray photoelectron spectrscopy as well as electron energy loss spectroscopy (EELS). Molecularly chemisorbed (singlet) oxygen is found on Ni, Cu, Ag, and Au surfaces showing features such as stabilization of the rB* orbital, destabilization of the .nu orbital, higher O(1s) binding energy than the atomic species, and a band 2-3 eV below the Fermi level due to metal d-O(2p)u* interaction. 0-0 and metal-oxygen stretching frequencies have been observed in EELS. Physical adsorption of O2 is found to occur on Pd and Ni surfaces, only at high exposures in the latter case. Physical adsorption and multilayer condensation of CO, on metal surfaces are distinguished by characteristic relaxation shifts in UPS as well as O(1s) binding energies. Adsorption of CO on a Ni surface covered with presorbed atomic oxygen gives rise to C02.

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The main factors affecting solid-phase Si-metal interactions are reported in this work. The influence of the orientation of the Si substrates and the presence of impurities in metal films and at the Si-metal interface on the formation of nickel and chromium silicides have been demonstrated. We have observed that the formation and kinetic rate of growth of nickel silicides is strongly dependent on the orientation and crystallinity of the Si substrates; a fact which, up to date, has never been seriously investigated in silicide formation. Impurity contaminations in the Cr film and at the Si-Cr interface are the most dominant influencing factors in the formation and kinetic rate of growth of CrSi2. The potentiality and use of silicides as a diffusion barrier in metallization on silicon devices were also investigated.

Two phases, Ni2Si and NiSi, form simultaneously in two distinct sublayers in the reaction of Ni with amorphous Si, while only the former phase was observed on other substrates. On (111) oriented Si substrates the growth rate is about 2 to 3 times less than that on <100> or polycrystalline Si. Transmission electron micrographs establish-·that silicide layers grown on different substrates have different microcrystalline structures. The concept of grain-boundary diffusion is speculated to be an important factor in silicide formation.

The composition and kinetic rate of CrSi2 formation are not influenced by the underlying Si substrate. While the orientation of the Si substrate does not affect the formation of CrSi2 , the purity of the Cr film and the state of Si-Cr interface become the predominant factors in the reaction process. With an interposed layer of Pd2Si between the Cr film and the Si substrate, CrSi2 starts to form at a much lower temperature (400°C) relative to the Si-Cr system. However, the growth rate of CrSi2 is observed to be independent of the thickness of the Pd2Si layer. For both Si-Cr and Si-Pd2Si-Cr samples, the growth rate is linear with time with an activation energy of 1.7 ± 0.1 ev.

A tracer technique using radioactive 31Si (T1/2 = 2.26 h) was used to study the formation of CrSi2 on Pd2Si. It is established from this experiment that the growth of CrSi2 takes place partly by transport of Si directly from the Si substrate and partly by breaking Pd2Si bonds, making free Si atoms available for the growth process.

The role of CrSi2 in Pd-Al metallization on Si was studied. It is established that a thin CrSi2 layer can be used as a diffusion barrier to prevent Al from interacting with Pd2Si in the Pd-Al metallization on Si.

As a generalization of what has been observed for polycrystalline-Si-Al interaction, the reactions between polycrystalline Si (poly Si) and other metals were studied. The metals investigated include Ni, Cr, Pd, Ag and Au. For Ni, Cr and Pd, annealing results in silicide formation, at temperatures similar to those observed on single crystal Si substrates. For Al, Ag and Au, which form simple eutectics with Si annealing results in erosion of the poly Si layer and growth of Si crystallites in the metal films.

Backscattering spectrometry with 2.0 and 2.3 MeV 4He ions was the main analytical tool used in all our investigations. Other experimental techniques include the Read camera glancing angle x-ray diffraction, scanning electron, optical and transmission electron microscopy. Details of these analytical techniques are given in Chapter II.

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To make stable and reproducible contacts to GaAs, metals which react with GaAs in the solid-phase should be favored. In this study, contacts formed employing Pd/TiN/Pd/Ag, Pd:Mg/TiN/Pd:Mg/Ag and Ru/TiN/Ru/Ag are studied. The TiN layer is included to investigate its application as diffusion barrier in these metallizations. Contacts to n-GaAs are rectifying and the value of barrier height is modified upon annealing. Contacts to p-GaAs are initially rectifying but exhibit ohmic behaviour after annealing. The modifications in the electrical properties are attributed to the solid-phase reaction of metal and GaAs. The integrity of the contacts relies critically on the success of TiN to prevent the intermixing of Ag overlayer and the underlying layers. At elevated annealing temperatures (450°C), TiN fails to function as a diffusion barrier. As a result, the properties of the contact deteriorates.

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我们利用湿法制备了单一稀土氟化物LnF_3(Ln = La 、Ce、Nd、Gd、Tb、Dy、Er、Yb、Y), 并采用高温固相反应制备了稀土掺杂氟化物Ln_(1-x)MxF_(3-δ)(Ln = La、Ce、Gd、Yb、Y M = Ca、Sr、Ba)。用X射张衍射方法研究了它们的晶体结构。对单一稀土氟化物,LaF_3、CeF_3、NdF_3为六方晶系,GdF_3、TbF_3、DyF_3、DrF_3、YbF_3、YF_3为正交晶系。对掺杂氟化物,La_(0.95)Ba_(0.05)F_(3-δ)、Ce_(0.95)Ca_(0.05)F_(3-δ)、Yb_(0.70)Sr_(0.30)F_(3-δ)为固溶体,Ce_(0.95)Ca_(0.05)F_(3-δ)的晶胞参数比CeF_3的略为变小;Gd_(0.85)Ca_(0.15)F_(3-δ)、Y_(0.71)Ca_(0.29)F_(3-δ)为新化合物,Gd_(0.85)Ca_(0.15)F_(3-δ)的晶体结构由GdF_3的正交晶系变为六方晶系,其晶胞参数为:a=3.973A, C=7.124A, γ=120°, Y_(0.71)Ca_(0.29)F_(3-δ)化合物的晶体结构与YF_3相同为正交晶系,晶胞参数却较小:a=3.683A、b=6.978A, c=3.396A。 我们对氟化物的烧结陶瓷片进行了直流电导率测量。对单一稀土氟化物,结果表明六方结构的化合物的电导率高于正交结构的,对于相同结构的氟化物,一般地,稀土离子半径越大,电导率越高;对于掺杂氟化物,由于二价碱土金属离子掺杂可以提高氟离子空位浓度,因此掺杂物的电异率均高于对应的单一稀土氟化物,其中Gd_(0.85)Ca_(0.15)F_(3-δ)掺杂后变成更利于离子导电的六方结构。采用压片工艺,以La_(0.95)Ba_(0.05)F_(3-δ)、Ce_(0.95)Ca_(0.05)F_(3-δ)、Gd_(0.85)Ca_(0.15)F_(3-δ)和Y_(0.71)Ca_(0.29)F_(3-δ)为固体电解质材料制备电位输出式氧传感器件,并利用调节N_2、O_2流量比控制氧分压的方法,对器件的敏感性能进行测试。结果表明该类器件可在150 ℃的低温下对氧气敏感,器件的输出电位差与氧分压的对数值有较好的线性关系。器件的响应时间在2分与9分之间。该类器件的敏感机理是:氧气先吸附敏感电极上,发生还原反应后生成的氧负离子在敏感电极与固体电解质界面上发生晶格置换反应,使得氧分压的改变通过快离子即氟离子在两个界面上(另一界面为参比电极与固体电解质界面)的电化学势差的变化与输出电位差值的改变联系起来,从而实现利用输出电位差测定氧分压的目的。根据使用的敏感电极材料,可以有单电子反应和双电子反应两种敏感机理。器件是由参比电极、固体电解质、敏感电极三个部分构成。我们采用固定其中二个部分的材料,改变第三个部分的用料的方法,对器件的敏感性进行了对比研究:A、我们首先固定固体电解质为Ce_(0.95)Ca_(0.05)F_(3-δ)、敏感电极材料为Pt黑,采用不同的参比电极材料Bi+BiF_3、Sb+SbF_3、Mg+MgF_2、Zn+ZnF_2制备了器件。性能测试结果表明使用Bi+BiF_3参比电极材料的器件稳定性和敏感性都比其它器件好。器件的输出电位差取决于参比电极氟化物的标准生成自由能的大小。B、固定Bi+BiF_3为参比电极材料,Ce_(0.95)Ca_(0.05)F_(3-δ)为固体电解质,使用不同的敏感电极材料Pt黑、Pd粉、Ag粉和RuO_2制备器件。性能测试结果表明:Pt材料器件的精确度较高,Pd材料器件的响应最快(2分),RuO_2材料器件的敏感性较好。使用Ag、RuO_2敏感电极材料的器件采用的是单电子反应敏感机理:O_2 + e <-> O_2~-, O_2~- + V_F + F_(F-bar)~- <-> O_(F-bar) + O_F + F_(F-bar)。而使用Pt、Pd敏感电极材料的器件采用双电子反应敏感机理:O_2 + 2e <-> 2O~-, 2O~- + F_(F-bar) <->O_(F-bar) + F~-。C、我们固定Bi+BiF_3为参比电极材料,Pt和RuO_2为敏感电极材料,使用La_(0.95)Ba_(0.05)F_(3-δ)、Ce_(0.95)Ca_(0.05)F_(3-δ)、Gd_(0.85)(Ca_(0.015)F_(3-δ)、Yb_(0.70)Ca_(0.29)F_(3-δ)制备了两个系列的器件。结果表明,无论是使用Pt还是使用RuO_2为敏感电极材料,都有下列的结论:用Ce_(0.95)Ca_(0.05)F_(3-δ)的器件的精确度较高,La_(0.95)Ba_(0.05)F_(3-δ)材料器件的敏感性最好,而Gd_(0.85)(Ca_(0.015)F_(3-δ的响应最快(Pt器件2分,RuO_2器件5分)。并未发现同时具备各种较好性能的器件,与敏感电极材料对器件性能的影响相比,固体电解质材料的影响要小。对于材料完全相同的器件,我们还对工艺条件影响作了初步研究。制备器件的工艺条件由于各种难以控制的因素不会每次、每批完全相同,工艺条件的差别也会影响器件的各方面性能。研究结果表明,工艺差别对器件的输出电位差值和响应时间的影响较大,对敏感性能的影响则较小。