The mode control of asymmetric Fabry-Perot optical modulators with multiple quantum wells

The asymmetric Fabry-Perot (ASFP) mode position with the thickness of different index coating layer is calculated. The reason for the blue shift of the ASFP mode with the increasing thickness of low index coating layer is analyzed and this phenomenon is observed in experiments. With the wet-etching method, the ASFP mode can be tuned to the desired wavelength and thus the deviation of growth can be compensated. This method is used to improve the contrast ratio of modulators. With the ASFP mode located at different positions relative to the unbiased e-hh peak, different modulation characteristics are demonstrated.

Optimization and evaluation in space conditions of multi-GHz optical modulators

Among the different optical modulator technologies available such as polymer, III-V semiconductors, Silicon, the well-known Lithium Niobate (LN) offers the best trade-off in terms of performances, ease of use, and power handling capability [1-9]. The LN technology is still widely deployed within the current high data rate fibre optic communications networks. This technology is also the most mature and guarantees the reliability which is required for space applications [9].In or der to fulfil the target specifications of opto-microwave payloads, an optimization of the design of a Mach-Zehnder (MZ) modulator working at the 1500nm telecom wavelength was performed in the frame of the ESA-ARTES "Multi GigaHertz Optical Modulator" (MGOM) project in order to reach ultra-low optical insertion loss and low effective driving voltage in the Ka band. The selected modulator configuration was the X-cut crystal orientation, associated to high stability Titanium in-diffusion process for the optical waveguide. Starting from an initial modulator configuration exhibiting 9 V drive voltage @ 30 GHz, a complete redesign of the coplanar microwave electrodes was carried out in order to reach a 6 V drive voltage @ 30GHz version. This redesign was associated to an optimization of the interaction between the optical waveguide and the electrodes. Following the optimisation steps, an evaluation program was applied on a lot of 8 identical modulators. A full characterisation was carried out to compare performances, showing small variations between the initial and final functional characteristics. In parallel, two similar modulators were submitted to both gamma (10-100 krad) and proton irradiation (10.109 p/cm²) with minor performance degradation.

Optical modulators with 2D layered materials

Light modulation is an essential operation in photonics and optoelectronics. With existing and emerging technologies increasingly demanding compact, efficient, fast and broadband optical modulators, high-performance light modulation solutions are becoming indispensable. The recent realization that 2D layered materials could modulate light with superior performance has prompted intense research and significant advances, paving the way for realistic applications. In this Review, we cover the state of the art of optical modulators based on 2D materials, including graphene, transition metal dichalcogenides and black phosphorus. We discuss recent advances employing hybrid structures, such as 2D heterostructures, plasmonic structures, and silicon and fibre integrated structures. We also take a look at the future perspectives and discuss the potential of yet relatively unexplored mechanisms, such as magneto-optic and acousto-optic modulation.

Photonic integrated circuits for the generation of coherent optical signals

The demand for optical bandwidth continues to increase year on year and is being driven primarily by entertainment services and video streaming to the home. Current photonic systems are coping with this demand by increasing data rates through faster modulation techniques, spectrally efficient transmission systems and by increasing the number of modulated optical channels per fibre strand. Such photonic systems are large and power hungry due to the high number of discrete components required in their operation. Photonic integration offers excellent potential for combining otherwise discrete system components together on a single device to provide robust, power efficient and cost effective solutions. In particular, the design of optical modulators has been an area of immense interest in recent times. Not only has research been aimed at developing modulators with faster data rates, but there has also a push towards making modulators as compact as possible. Mach-Zehnder modulators (MZM) have proven to be highly successful in many optical communication applications. However, due to the relatively weak electro-optic effect on which they are based, they remain large with typical device lengths of 4 to 7 mm while requiring a travelling wave structure for high-speed operation. Nested MZMs have been extensively used in the generation of advanced modulation formats, where multi-symbol transmission can be used to increase data rates at a given modulation frequency. Such nested structures have high losses and require both complex fabrication and packaging. In recent times, it has been shown that Electro-absorption modulators (EAMs) can be used in a specific arrangement to generate Quadrature Phase Shift Keying (QPSK) modulation. EAM based QPSK modulators have increased potential for integration and can be made significantly more compact than MZM based modulators. Such modulator designs suffer from losses in excess of 40 dB, which limits their use in practical applications. The work in this thesis has focused on how these losses can be reduced by using photonic integration. In particular, the integration of multiple lasers with the modulator structure was considered as an excellent means of reducing fibre coupling losses while maximising the optical power on chip. A significant difficultly when using multiple integrated lasers in such an arrangement was to ensure coherence between the integrated lasers. The work investigated in this thesis demonstrates for the first time how optical injection locking between discrete lasers on a single photonic integrated circuit (PIC) can be used in the generation of coherent optical signals. This was done by first considering the monolithic integration of lasers and optical couplers to form an on chip optical power splitter, before then examining the behaviour of a mutually coupled system of integrated lasers. By operating the system in a highly asymmetric coupling regime, a stable phase locking region was found between the integrated lasers. It was then shown that in this stable phase locked region the optical outputs of each laser were coherent with each other and phase locked to a common master laser.

Optical Microring Resonators based on ion-implanted LiNbO3 ridge waveguides

The growing interest for Integrated Optics for sensing, telecommunications and even electronics is driving research to find solutions to the new challenges issued by a more and more fast, connected and smart world. This thesis deals with the design, the fabrication and the characterisation of the first prototypes of Microring Resonators realised using ion implanted Lithium Niobate (LiNbO3) ridge waveguides. Optical Resonator is one among the most important devices for all tasks described above. LiNbO3 is the substrate commonly used to fabricate optical modulators thanks to its electro-optic characteristics. Since it is produced in high quantity, good quality and large wafers its price is low compared to other electro-optic substrate. We propose to use ion implantation as fabrication technology because in the other way standard optical waveguides realised in LiNbO3 by Proton Exchange (PE) or metal diffusion do not allow small bending radii, which are necessary to keep the circuit footprint small. We will show in fact that this approach allows to fabricate waveguides on Lithium Niobate that are better than PE or metal diffused waveguides as it allows smaller size devices and tailoring of the refractive index profile controlling the implantation parameters. Moreover, we will show that the ridge technology based on enhanced etching rate via ion implantation produces a waveguide with roughness lower than a dry etched one. Finally it has been assessed a complete technological process for fabrication of Microring Resonator devices in Lithium Niobate by ion implantation and the first prototypes have been produced.

Electro-optic integration of embedded electrodes and waveguides in LiNbO3 using a femtosecond laser

We describe the fabrication of a Mach-Zehnder optical modulator in LiNbO3 by femtosecond laser micormachining, which is composed of optical waveguides inscripted by a femtosecond laser and embedded microelectrodes subsequently using femtosecond laser ablation and selective electroless plating. A half-wave voltage close to 19 V is achieved at a wavelength of 632.8 nm with an interaction length of 2.6 mm. This simple and cost-effective technique opens up new opportunities for fabricating integrated electro-optic devices. (C) 2008 Optical Society of America

Light-matter interaction in a microcavity-controlled graphene transistor

Graphene has extraordinary electronic and optical properties and holds great promise for applications in photonics and optoelectronics. Demonstrations including high-speed photodetectors, optical modulators, plasmonic devices, and ultrafast lasers have now been reported. More advanced device concepts would involve photonic elements such as cavities to control light-matter interaction in graphene. Here we report the first monolithic integration of a graphene transistor and a planar, optical microcavity. We find that the microcavity-induced optical confinement controls the efficiency and spectral selection of photocurrent generation in the integrated graphene device. A twenty-fold enhancement of photocurrent is demonstrated. The optical cavity also determines the spectral properties of the electrically excited thermal radiation of graphene. Most interestingly, we find that the cavity confinement modifies the electrical transport characteristics of the integrated graphene transistor. Our experimental approach opens up a route towards cavity-quantum electrodynamics on the nanometre scale with graphene as a current-carrying intra-cavity medium of atomic thickness. © 2012 Macmillan Publishers Limited. All rights reserved.

Graphene field-effect transistors as room-temperature terahertz detectors

The unique optoelectronic properties of graphene make it an ideal platform for a variety of photonic applications, including fast photodetectors, transparent electrodes in displays and photovoltaic modules, optical modulators, plasmonic devices, microcavities, and ultra-fast lasers. Owing to its high carrier mobility, gapless spectrum and frequency-independent absorption, graphene is a very promising material for the development of detectors and modulators operating in the terahertz region of the electromagnetic spectrum (wavelengths in the hundreds of micrometres), still severely lacking in terms of solid-state devices. Here we demonstrate terahertz detectors based on antenna-coupled graphene field-effect transistors. These exploit the nonlinear response to the oscillating radiation field at the gate electrode, with contributions of thermoelectric and photoconductive origin. We demonstrate room temperature operation at 0.3 THz, showing that our devices can already be used in realistic settings, enabling large-area, fast imaging of macroscopic samples. © 2012 Macmillan Publishers Limited. All rights reserved.

High Q microring resonator in silicon-on-insulator rib waveguides - art. no. 68380J

A high quality (Q) factor microring resonator in silicon-on-insulator rib waveguides was fabricated by electron beam lithography, followed by inductively coupled plasma etching. The waveguide dimensions were scaled down to submicron, for a low bending loss and compactness. Experimentally, the resonator has been realized with a quality factor as high as 21,200, as well as a large extinction ratio 12.5dB at telecommunication wavelength near 1550nm. From the measured results, propagation loss in the rib waveguide is determined as low as 6.900/cm. This high Q microring resonator is expected to lead to high speed optical modulators and bio-sensing devices.

Desenvolvimento de célula Pockels na topologia reflexiva aplicada a TP óptico de alta tensão.

O trabalho aborda o estudo e o desenvolvimento de um interferômetro sensor de alta tensão, baseado em célula Pockels (modulador eletro-óptico) na topologia reflexiva (\"double pass\") e que é parte integrante de um Transformador de Potencial Óptico (TPO), que utiliza sistema interferométrico de luz branca (WLI-White Light Interferometry), que está sendo desenvolvido pelo grupo do Laboratório de Sensores Ópticos (LSO) do PEA-EPUSP, e é capaz de medir diretamente tensões presentes em sistema elétrico de potência (SEP) classe 69kVRMS. Para desenvolver o tema proposto foi feita uma revisão da literatura baseada em livros, artigos e teses para identificar topologias em moduladores eletro-ópticos transmissiva (\"single pass\") e reflexiva (\"double pass\") para definir o tipo de modulador mais adequado para a aplicação em questão. A partir dos estudos e implementações realizadas, verificou-se um enorme potencial para o desenvolvimento e aplicação da topologia \"double pass\" no sensor interferométrico da célula de alta tensão do TPO. A topologia mostrou-se vantajosa em relação aos protótipos dos TPOs desenvolvidos anteriormente, a partir de características tais como: a facilidade de recurso de alinhamento do feixe de luz, construção e reprodução relacionados ao cristal eletro-óptico, diminuição do número de componentes ópticos volumétricos e aumento da rigidez dielétrica da célula sensora. Simulações computacionais foram realizadas mediante a aplicação do método dos elementos finitos (MEF) que contribuíram para o auxílio do projeto da célula sensora, particularmente, para estimativa do valor da voltagem de meia onda, V?, parâmetro importante para o projeto do TPO. Um protótipo do TPO com célula sensora de alta tensão reflexiva foi implementado e testado no laboratório de alta tensão do IEEUSP a partir de ensaios com tensões nominais de 69kVrms a 60Hz e máxima de 140kVrms a 60 Hz. Como resultado deste trabalho, amplia-se o conhecimento e domínio das técnicas de construção de interferômetros sensores de alta tensão na topologia reflexiva aplicadas a TPOs.