Komplexe von Lanthanidnitraten mit 2-Methylpyridin-1-oxid

Complexes of lanthanide nitrates with 2-methylpyridine-1-oxide of the formuleLn(2-MePyO)3(NO3)3 whereLn=Nd, Sm, Tb, Dy and Yb and La(2-MePyO)3(NO3)3·2H2O have been prepared and characterized by chemical analyses, IR spectral, conductance andDTA data. IR spectral data have been interpreted in terms of the coordination of the ligand to the metal through the oxygen of the N–O group. Conductance and IR spectral data show that all the nitrate groups are bidentate and that two of the nitrate groups are bound to the metal in a different manner than the other.

Komplexe von 2,6-Dimethylpyridin-1-oxid mit Lanthanidjodiden

Complexes of 2,6-dimethylpyridine 1-oxide with lanthanide iodides of the formulaeLn(2,6-LTNO)5I3 whereLn=La, Tb and Yb,Ln(2,6-LTNO)4I3 whereLn=Pr and Nd and Er(2,6-LTNO)4.5I3 have been prepared and characterised by chemical analysis, infrared and conductance studies. Infrared and conductance data have been interpreted in terms of dimeric (or polymeric) structures involving bridging amine oxide groups.

Poly(hydroxyether of phenolphthalein) and its blends with poly(ethylene oxid)

Poly(hydroxyether of phenolphthalein) (PPH) was synthesized through the polycondensation of phenolphthalein with epichlorohydrin. It was characterized by Fourier transform infrared (FTIR) spectroscopy, NMR spectroscopy, and differential scanning calorimetry (DSC). The miscibility of the blends of PPH with poly(ethylene oxide) (PEO) was established on the basis of the thermal analysis results. DSC showed that the PPH/PEO blends prepared via casting from N,N-dimethylformamide possessed single, composition-dependent glass-transition temperatures. Therefore, the blends were miscible in the amorphous state for all compositions. FTIR studies indicated that there were competitive hydrogen-bonding interactions with the addition of PEO to the system, which were involved with (OHO)-O-. . .=C

Celdas de pilas de oxidó solido, avance en el procesado de materiales

Póster presentado en el XIV Congreso Nacional de Materiales (CNMAT) en Gijón (España), del 8 al 10 de Junio de 2016

Kinetic decomposition of Ni2SiO4 in oxygen potential gradients

Nickel orthosilicate (Ni2SiO4) has been found to decompose into its component binary oxides in oxygen potential gradients at 1373 K. Nickel oxide was formed at the high oxygen potential boundary, while silica was detected at the low oxygen potential side. Significant porosity and fissures were observed near the Ni2SiO4/SiO2 interface and the SiO2 layer. The critical oxygen partial pressure ratio required for decomposition varied from 1.63 to 2.15 as the oxygen pressures were altered from 1.01 ⊠ 105 to 2.7X 10−4 Pa, well above the dissociation pressure of Ni2SiO4. Platinum markers placed at the boundaries of the Ni2SiO4 sample indicated growth of NiO at the higher oxygen potential boundary, without any apparent transport of material to the low oxygen potential side. However, significant movement of the bulk Ni2SiO4 crystal with respect to the marker was not observed. The decomposition of the silicate occurs due to the unequal rates of transport of Ni and Si. The critical oxygen partial pressure ratio required for decomposition is related both to the thermodynamic stability of Ni2SiO4 with respect to component oxides and the ratio of diffusivities of nickel and silicon. Kinetic decomposition of multicomponent oxides, first discovered by Schmalzried, Laqua, and co-workers [H. Schmalzried, W. Laqua, and P. L. Lin, Z. Natur Forsch. Teil A 34, 192 (1979); H. Schmalzried and W. Laqua, Oxid. Met. 15, 339 (1981); W. Laqua and H. Schmalzried, Chemical Metallurgy—A Tribute to Carl Wagner (Metallurgical Society of the AIME, New York, 1981), p. 29] has important consequences for their use at high temperatures and in geochemistry.

Miscibility and Hydrogen Bonding in Blends of Poly(4-vinylphenol)/Poly(vinyl methyl ketone)

The miscibility and phase behavior of poly(4-vinylphenol) (PVPh) with poly(vinyl methyl ketone) (PVMK) was investigated by differential scanning calorimetry (DSC), Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy (SEM). It was shown that all blends of PVPh/PVMK are totally miscible. A DSC study showed the apparition of a single glass transition (T-g) over their entire composition range. When the amount of PVPh exceeds 50% in blends, the obtained T(g)s are found to be significantly higher than those observed for each individual component of the mixture, indicating that these blends are capable of forming interpolymer complexes. FTIR analysis revealed the existence of preferential specific interactions via hydrogen bonding between the hydroxyl and carbonyl groups, which intensified when the amount of PVPh was increased in blends. Furthermore, the quantitative FTIR study carried out for PVPh/PVMK blends was also performed for the vinylphenol (VPh) and vinyl methyl ketone (VMK) functional groups. These results were also established by scanning electron microscopy study (SEM).

Very low hysteresis organic thin-film transistors

Very low hysteresis vanadyl-phthalocyanine/para-sexiphenyl thin-film transistors (TFTs) have been fabricated using benzocyclobutenone (BCBO) derivatives/tantalum pentoxide (Ta2O5)/BCBO triple gate dielectrics. The field effect mobility, on/off current ratio and threshold voltage of organic TFTs are 0.45 cm(2) V-1 s(-1), 3.5 x 10(4) and -6.8 V, respectively. To clarify the mechanism of hysteresis, devices with different dielectrics have been studied. It is found that the bottom BCBO derivatives (contact with a gate electrode) block the electron injection from a gate electrode to dielectrics.

ELECTROCHEMICAL PREPARATION OF MICROELECTRODES MODIFIED WITH NONSTOICHIOMETRIC MIXED-VALENT MOLYBDENUM OXIDES

A blue, conductive, compact, mixed-valent Mo(VI, V) oxide film was grown on carbon fiber (CF) microelectrode surface by cycling the potential between +0.20 and -0.70 V vs. SCE in a fresh prepared Na2MoO4 solution (pH = 2, H2SO4). The thickness of the oxid

Processes influencing the destruction of microcystin-LR by TiO2 photocatalysis

We have previously reported the effectiveness of TiO₂ photocatalysis in the destruction of the cyanotoxin microcystin-LR [P.K.J. Robertson, L.A. Lawton, B. Münch, J. Rouzade, J. Chem. Soc., Chem. Commun., 4 (1997) 393; P.K.J. Robertson, L.A. Lawton, B. Münch, B.J.P.A. Cornish, J. Adv. Oxid. Technol., in press]. In this paper we report an investigation of factors which influence the rate of the toxin destruction at the catalyst surface. A primary kinetic isotope effect of approximately 3 was observed when the destruction was performed in a heavy water solvent. Hydroxylated compounds were observed as products of the destruction process. No destruction was observed when the process was investigated under a nitrogen atmosphere.

Modification and Analysis of Group-13-Nitride Semiconductor Surfaces: Influence of Adsorbates on Device Characteristics and Processing

Im Rahmen dieser interdisziplinären Doktorarbeit wird eine (Al)GaN Halbleiteroberflächenmodifikation untersucht, mit dem Ziel eine verbesserte Grenzfläche zwischen dem Material und dem Dielektrikum zu erzeugen. Aufgrund von Oberflächenzuständen zeigen GaN basierte HEMT Strukturen üblicherweise große Einsatzspannungsverschiebungen. Bisher wurden zur Grenzflächenmodifikation besonders die Entfernung von Verunreinigungen wie Sauerstoff oder Kohlenstoff analysiert. Die nasschemischen Oberflächenbehandlungen werden vor der Abscheidung des Dielektrikums durchgeführt, wobei die Kontaminationen jedoch nicht vollständig entfernt werden können. In dieser Arbeit werden Modifikationen der Oberfläche in wässrigen Lösungen, in Gasen sowie in Plasma analysiert. Detaillierte Untersuchungen zeigen, dass die inerte (0001) c-Ebene der Oberfläche kaum reagiert, sondern hauptsächlich die weniger polaren r- und m- Ebenen. Dies kann deutlich beim Defektätzen sowie bei der thermischen Oxidation beobachtet werden. Einen weiteren Ansatz zur Oberflächenmodifikation stellen Plasmabehandlungen dar. Hierbei wird die Oberflächenterminierung durch eine nukleophile Substitution mit Lewis Basen, wie Fluorid, Chlorid oder Oxid verändert, wodurch sich die Elektronegativitätsdifferenz zwischen dem Metall und dem Anion im Vergleich zur Metall-Stickstoff Bindung erhöht. Dies führt gleichzeitig zu einer Erhöhung der Potentialdifferenz des Schottky Kontakts. Sauerstoff oder Fluor besitzen die nötige thermische Stabilität um während einer Silicium-nitridabscheidung an der (Al)GaN Oberfläche zu bleiben. Sauerstoffvariationen an der Oberfläche werden in NH3 bei 700°C, welches die nötigen Bedingungen für die Abscheidung darstellen, immer zu etwa 6-8% reduziert – solche Grenzflächen zeigen deswegen auch keine veränderten Ergebnisse in Einsatzspannungsuntersuchungen. Im Gegensatz dazu zeigt die fluorierte Oberfläche ein völlig neues elektrisches Verhalten: ein neuer dominanter Oberflächendonator mit einem schnellen Trapping und Detrapping Verhalten wird gefunden. Das Energieniveau dieses neuen, stabilen Donators liegt um ca. 0,5 eV tiefer in der Bandlücke als die ursprünglichen Energieniveaus der Oberflächenzustände. Physikalisch-chemische Oberflächen- und Grenzflächenuntersuchung mit XPS, AES oder SIMS erlauben keine eindeutige Schlussfolgerung, ob das Fluor nach der Si3N4 Abscheidung tatsächlich noch an der Grenzfläche vorhanden ist, oder einfach eine stabilere Oberflächenrekonstruktion induziert wurde, bei welcher es selbst nicht beteiligt ist. In beiden Fällen ist der neue Donator in einer Konzentration von 4x1013 at/cm-2 vorhanden. Diese Dichte entspricht einer Oberflächenkonzentration von etwa 1%, was genau an der Nachweisgrenze der spektroskopischen Methoden liegt. Jedoch werden die elektrischen Oberflächeneigenschaften durch die Oberflächenmodifikation deutlich verändert und ermöglichen eine potentiell weiter optimierbare Grenzfläche.

Modell för att prediktera när tertiära glödskalsproblem uppstår

SSAB Tunnplåt har i Borlänge en produktionsanläggning innehållande varmvalsverk, kallvalsverk, normaliseringsanläggning, betsträckor, spaltsträckor, klippsträckor och ytbeläggningslinjer m.m. Genom hela varmvalsningsprocessen bildas oxid på den varma stålytan s.k. glödskal. Under pågående processer avlägsnas glödskalet för att ej påverka slutproduktens ytfinish och materialegenskaper. Fastän ytan spolas ren från glödskal före varje valsning händer det att det finns glödskalsproblem i form av grov yta på de färdiga banden. Anledningen till detta är att det hinner bildas glödskal i början av färdigverket efter att den sista glödskalsrensningen gjorts. Denna glödskalsbildning beror på en rad olika faktorer och troligen kombinationer av olika faktorer. En nyligen installerad ytsyningsanläggning detekterar återbildat (tertiärt) glödskal, detta presenteras som area fraktion av defekter per band. Detta mått används som resultat parameter när man med hjälp av ett verktyg för multivariatdataanalys analyserar ett stort antal valsningsparametrar som kan ha påverkan på det återbildade glödskalet. Analysen utförs med ett verktyg för multivariatdataanalys som heter Simca. Resultatet från analysen skall ses som ett hjälpmedel för att tala om inom vilka gränser valsverket skall köras för att undvika problemen med återbildat glödskal.

Efeito da velocidade do ar em barra de pulverização na deposição de produtos fitossanitários em feijoeiro

Com o objetivo de avaliar o efeito da variação da velocidade do ar em barra de pulverização na deposição da calda na cultura do feijoeiro (Phaseolus vulgaris), realizou-se o experimento em 9 e 10 de outubro de 2000, no Centro de Pesquisas Agronômicas - Cyanamid, em Iracemápolis (SP), em delineamento inteiramente casualizado, aos 48 dias após a emergência (DAE). Para isso, convencionou-se que a rotação máxima do ventilador, medida com o auxílio de fototacômetro, possibilitou a obtenção da velocidade máxima do ar na barra de pulverização e, a partir daí, níveis de 50% e 75% da velocidade máxima do ar. Alvos artificiais foram fixados na superfície adaxial e na abaxial de folíolos posicionados, nos terços superior e inferior das plantas selecionadas, ao acaso, e distribuídas perpendicularmente ao deslocamento do pulverizador. O óxido cuproso (50% de cobre metálico) foi o traçador utilizado em pulverização e a determinação quantitativa dos depósitos feita com o uso da espectrofotometria de absorção atômica. Os resultados sugerem que a variação da velocidade do ar na barra pulverizadora não influenciou sobre os níveis de depósitos no feijoeiro, aos 48 DAE, nas condições do presente trabalho.

Soja crua em dietas para a Tilápia-do-Nilo (Oreochromis niloticus)

Pós-graduação em Aquicultura - FCAV