A nano-patterned photonic crystal laser with a dye-doped liquid crystal

Covering a nano-patterned titanium dioxide photonic crystal (PC) within a well-oriented film of dye-doped liquid crystal (LC), a distributed feedback laser is constructed whereby the emission characteristics can be manipulated in-situ using an electric field. This hybrid organic-inorganic structure permits simultaneous selectivity of both the beam pattern and laser wavelength by electrical addressing of the LC director. In addition, laser emission is obtained both in the plane and normal to the PC. Along with experimental data, a theoretical model is presented that is based upon an approximate calculation of the band structure of this birefringent, tuneable laser device. © 2013 AIP Publishing LLC.

Fabrication of nano-patterned sapphire substrates and their application to the improvement of the performance of GaN-based LEDs

Nano-patterned sapphire substrates (NPSSs) were fabricated by a chemical wet etching technology using nano-sized SiO2 as masks. The NPSS was applied to improve the performance of GaN-based light emitting diodes (LEDs). GaN-based LEDs on NPSSs were grown by metal organic chemical vapour deposition. The characteristics of LEDs grown on NPSSs and conventional planar sapphire substrates were studied. The light output powers of the LEDs fabricated on NPSSs were considerably enhanced compared with that of the conventional LEDs grown on planar sapphire substrates.

The field emission properties of nonpolar a-plane n-type GaN films grown on nano-patterned sapphire substrates

Si-doped nonpolar a-plane GaN films were grown on nanopatterned sapphire substrates by a low-pressure metal organic chemical vapor deposition (MOCVD) system. The structure, morphology and field emission properties of the sample were studied by means of high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and field emission measurement. The XRD analysis shows that the sample is a nonpolar a-plane (11 (2) over bar0) GaN film. The field emission measurement shows that the nonpolar GaN films exhibit excellent field emission properties with a threshold emission field of as low as 10 V/mu m at a current density of 0.63 mu A/cm(2), and a high field emission current density of 74 mA/cm(2) at an applied field of 24 V/mu m. Moreover, the Fowler-Nordheirn plot of the sample fits a near linear relation. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Growth of nonpolar a-plane GaN on nano-patterned r-plane sapphire substrates

Sapphire substrates were nano-patterned by inductive coupled plasma etching process. Nonpolar a-plane GaN films were grown on planar and nano-patterned r-plane sapphire substrates by metal organic chemical vapor deposition. The anisotropic characteristic and the crystalline quality of the a-plane GaN films were studied through XRD rocking curves. The cross section and surface morphologies of the a-plane GaN films were studied using SEM and AFM measurements, respectively. The crystal quality and surface flatness of the nonpolar a-plane GaN were greatly improved through the usage of the nano-patterned r-plane sapphire substrates. (C) 2008 Elsevier B.V. All rights reserved.

High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103

Nano-patterning sapphire substrates technique has been developed for nitrides light-emitting diodes (LEDs) growths. It is expected that the strain induced by the lattice misfits between the GaN epilayers and the sapphire substrates can be effectively accommodated via the nano-trenches. The GaN epilayers grown on the nano-patterned sapphire substrates by a low-pressure metal organic chemical vapor deposition (MOCVD) are characterized by means of scanning electron microscopy (SEM), high-resolution x-ray diffraction (HRXRD) and photoluminescence (PL) techniques. In comparison with the planar sapphire substrate, about 46% increment in device performance is measured for the InGaN/GaN blue LEDs grown on the nano-patterned sapphire substrates.

Momentum transfer effects in the transport of adsorbate at a nano-patterned surface

Adsorbate molecules scattered in the repulsive field of a surface feature in the form of a semi-cylindrical stripe may be considered as a simple model for a nano-patterned surface. The extent of scattering was conveniently expressed as the tangential momentum accommodation coefficient. An analytical result was obtained using a simple local specular reflection hypothesis in contrast to the more complicated situation of an array of atoms discussed elsewhere, in which screening and secondary reflection may occur (Nicholson and Bhatia 2005). It was also demonstrated that a simple 2D representation leads to the same result for the tangential momentum accommodation coefficient.

High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth

High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by metalorganic chemical vapor deposition (MOCVD) on a nano-patterned SiO2/GaN template. The nanoporous SiO2 on GaN surface was created by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) template as a mask. This selective regrowth results in highly crystalline GaN nanodots confirmed by high resolution transmission electron microscopy. The narrow size distribution and uniform spatial position of the nanoscale dots offer potential advantages over self-assembled dots grown by the Stranski–Krastanow mode.

Desenvolvimento e avaliação da efetividade de duas pastas polidoras em padrão nanométrico empregadas a materiais restauradores estéticos: análise comparativa por perfilometria digital e microscopia de força atômica

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Patterned growth and differentiation of neural cells on polymer derived carbon substrates with micro/nano structures in vitro

The growth of neuroblastoma (N2a) and Schwann cells has been explored on polymer derived carbon substrates of varying micro and nanoscale geometries: resorcinol-formaldehyde (RE) gel derived carbon films and electrospun nanofibrous (similar to 200 nm diameter) mat and SU-8 (a negative photoresist) derived carbon micro-patterns. MTT assay and complementary lactate dehydrogenase (LDH) assay established cytocompatibility of RE derived carbon films and fibers over a period of 6 days in culture. The role of length scale of surface patterns in eliciting lineage-specific adaptive response along, across and on the interspacing between adjacent micropatterns (i.e., ``on'', ``across'' and ``off'') has been assayed. Textural features were found to affect 3',5'-cyclic AMP sodium salt-induced neurite outgrowth, over a wide range of length scales: from similar to 200 nm (carbon fibers) to similar to 60 mu m (carbon patterns). Despite their innate randomness, carbon nanofibers promoted preferential differentiation of N2a cells into neuronal lineage, similar to ordered micro-patterns. Our results, for the first time, conclusively demonstrate the potential of RE-gel and SU-8 derived carbon substrates as nerve tissue engineering platforms for guided proliferation and differentiation of neural cells in vitro. (C) 2013 Elsevier Ltd. All rights reserved.

Temperature and Stress Controlled Surface Manipulation in Ni-Al Nano-Layers

In the present paper the effects of temperature and high strain rate loading on the formation of various surface patterns in Ni-Al nano-layers are discussed. Effects of boundary conditions on the B2 -> BCT phase transformation in the nano-layer are also discussed. This study is aimed at developing several interesting patterned surface structures in Ni-Al nanolayer by controlling the phase transformation temperature and mechanical loading.

Non-covalent functionalization using lithographically patterned polyelectrolyte multilayers for high-density microarrays

We describe a method to fabricate high-density biological microarrays using lithographic patterning of polyelectrolyte multi layers formed by spin assisted electrostatic layer-by-layer assembly. Proteins or DNA can be immobilized on the polyelectrolyte patterns via electrostatic attachment leading to functional microarrays. As the immobilization is done using electrostatically assembled polyelectrolyte anchor, this process is substrate independent and is fully compatible with a standard semiconductor fabrication process flow. Moreover, the electrostatic assembly of the anchor layer is a fast process with reaction saturation times of the order of a few minutes unlike covalent schemes that typically require hours to reach saturation. The substrate independent nature of this technique is demonstrated by functionalizing glass slides as well as regular transparency sheets using the same procedure. Using a model protein assay, we demonstrate that the non-covalent immobilization scheme described here has competitive performance compared to conventional covalent immobilization schemes described in literature. (C) 2012 Elsevier B.V. All rights reserved.

Nano-layer structure of silicon-on-insulator materials

Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.

Nano-layer structure of silicon-on-insulator materials

Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.

Nano-fabrication of complex functional structures using non- conventional lithography

In Chapter 1 I will present a brief introduction on the state of art of nanotechnologies, nanofabrication techniques and unconventional lithography as a technique to fabricate the novel electronic device as resistive switch so-called memristor is shown. In Chapter 2 a detailed description of the main fabrication and characterization techniques employed in this work is reported. Chapter 3 parallel local oxidation lithography (pLOx) describes as a main technique to obtain accurate patterning process. All the effective parameters has been studied and the optimized condition observed to highly reproducible with excellent patterned nanostructures. The effect of negative bias, calls local reduction (LR) studied. Moreover, the use of AC bias shows faster patterning process respect to DC bias. In Chapter 4 (metal/ e-SiO2/ Si nanojunction) it is shown how the electrochemical oxide nanostructures by using pLOx can be used in the fabrication of novel devices call memristor. We demonstrate a new concept, based on conventional materials, where the lifetime problem is resolved by introducing a “regeneration” step, which restores the nano-memristor to its pristine condition by applying an appropriate voltage cycle. In Chapter 5 (Graphene/ e-SiO2/ Si), Graphene as a building block material is used as an electrode to selectively oxidize the silicon substrate by pLOx set up for the fabrication of novel resistive switch device. In Chapter 6 (surface architecture) I will show another application of pLOx in biotechnology is shown. So the surface functionalization combine with nano-patterning by pLOx used to design a new surface to accurately bind biomolecules with the possibility of studying those properties and more application in nano-bio device fabrication. So, in order to obtain biochips, electronic and optical/photonics devices Nano patterning of DNA used as scaffolds to fabricate small functional nano-components.

Nano-stenciled RGD-gold patterns that inhibit focal contact maturation induce lamellipodia formation in fibroblasts

Cultured fibroblasts adhere to extracellular substrates by means of cell-matrix adhesions that are assembled in a hierarchical way, thereby gaining in protein complexity and size. Here we asked how restricting the size of cell-matrix adhesions affects cell morphology and behavior. Using a nanostencil technique, culture substrates were patterned with gold squares of a width and spacing between 250 nm and 2 µm. The gold was functionalized with RGD peptide as ligand for cellular integrins, and mouse embryo fibroblasts were plated. Limiting the length of cell-matrix adhesions to 500 nm or less disturbed the maturation of vinculin-positive focal complexes into focal contacts and fibrillar adhesions, as indicated by poor recruitment of ?5-integrin. We found that on sub-micrometer patterns, fibroblasts spread extensively, but did not polarize. Instead, they formed excessive numbers of lamellipodia and a fine actin meshwork without stress fibers. Moreover, these cells showed aberrant fibronectin fibrillogenesis, and their speed of directed migration was reduced significantly compared to fibroblasts on 2 µm square patterns. Interference with RhoA/ROCK signaling eliminated the pattern-dependent differences in cell morphology. Our results indicate that manipulating the maturation of cell-matrix adhesions by nanopatterned surfaces allows to influence morphology, actin dynamics, migration and ECM assembly of adhering fibroblasts.