Room-temperature ferromagnetic semiconductor MnxGa1-xSb

Ferromagnetic semiconductor MnxGa1-xSb single crystals were fabricated by Mn-ions implantation, deposition, and the post annealing. Magnetic hysteresis-loops in the MnxGa1-xSb single crystals were obtained at room temperature (300 K). The structure of the ferromagnetic semiconductor MnxGa1-xSb single crystal was analyzed by Xray diffraction. The distribution of carrier concentrations in MnxGa1-xSb was investigated by electrochemical capacitance- voltage profiler. The content of Mn in MnxGa1-xSb varied gradually from x = 0.09 near the surface to x = 0 in the wafer inner analyzed by X-ray diffraction. Electrochemical capacitance-voltage profiler reveals that the concentration of p-type carriers in MnxGa1-xSb is as high as 1 1021 cm-3, indicating that most of the Mn atoms in MnxGa1-xSb take the site of Ga, and play a role of acceptors.

Room-temperature ferromagnetic semiconductor MnxGa1-xSb

Ferromagnetic semiconductor MnxGa1-xSb single crystals were fabricated by Mn-ions implantation, deposition, and the post annealing. Magnetic hysteresis-loops in the MnxGa1-xSb single crystals were obtained at room temperature (300 K). The structure of the ferromagnetic semiconductor MnxGa1-xSb single crystal was analyzed by Xray diffraction. The distribution of carrier concentrations in MnxGa1-xSb was investigated by electrochemical capacitance-voltage profiler. The content of Mn in MnxGa1-xSb varied gradually from x = 0.09 near the surface to x = 0 in the wafer inner analyzed by X-ray diffraction. Electrochemical capacitance-voltage profiler reveals that the concentration of p-type carriers in MnxGa1-xSb is as high as 1 X 10(21) cm(-3), indicating that most of the Mn atoms in MnxGa1-xSb take the site of Ga, and play a role of acceptors.

The influence of temperature gradient and lowering speed on the melt-solid interface shape of GaxIn1-xSb alloy crystals grown by vertical Bridgman technique

Radially homogeneous bulk alloys of GaxIn1-xSb in the range 0.7 < x < 0.8, have been grown by vertical Bridgman technique. The factors affecting the interface shape during the growth were optimised to achieve zero convexity. From a series of experiments, a critical ratio of the temperature gradient (G) of the furnace at the melting point of the melt composition to the ampoule lowering speed (v) was deduced for attaining the planarity of the melt-solid interface. The studies carried out on directional solidification of Ga0.77In0.23Sb mixed crystals employing planar melt-solid interface exhibited superior quality than those with nonplanar interfaces. The solutions to certain problems encountered during the synthesis and growth of the compound were discussed. (C) 1999 Elsevier Science B.V. All rights reserved.

Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb

The Raman scattering study of vibrational modes and hole concentration in a ferromagnetic semiconductor Ga1-xMnxSb grown by Mn ion implantation, deposition and post-annealing has been presented. The experiments are performed both in implanted and unimplanted regions before and after etching the samples. The Raman spectra measured from the unimplanted region show only GaSb-like phonon modes. On the other hand, the spectra measured from the implanted region show additional phonon modes approximately at 115, 152, 269, 437 and 659 cm(-1). The experimental results demonstrate that the extra modes are associated with surface defects, crystal disorder and blackish layer that is formed due to Mn ion implantation, deposition and annealing processes. Furthermore, we have determined the hole concentration as a function of laser probing position by modeling the Raman spectra using coupled mode theory. The contributions of GaSb-like phonon modes and coupled LO-phonon plasmon mode are taken into consideration in the model. The hole-concentration-dependent CLOPM is resolved in the spectra measured from the implanted and nearby implanted regions. The hole concentrations determined by Raman scattering are found to be in good agreement with those measured by the electrochemical capacitance-voltage technique.

Morphological Evolution and Properties of LPE Grown GaSb, AlGaSb and AlGaAsSb

The nucleation morphologies of LPE grown GaSb, AlGaSb and AlGaAsSb layers on GaSb substrates are presented. The morphology of the GaSb layers grown from Sb-rich melts showed facets on highly terraced surface, whereas those grown from Ga-rich melts exhibited fine terraces without facets. An optimum temperature in the range of 500 – 550°C was found to be suitable for the growth of mirror smooth layers from Ga-melts. The surface morphology of the AlxGa1-xSb layers degrades drastically with increase in Al content beyond x = 0.5. The surface morphology of AlGaAsSb epilayers has been found to depend strongly on the pre-growth melt dissolution sequence.

Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions

The effects of gravity and crystal orientation on the dissolution of GaSb into InSb melt and the recrystallization of InGaSb were investigated under microgravity condition using a Chinese recoverable satellite and under normal gravity condition on earth. To investigate the effect of gravity on the solid/liquid interface and compositional profiles. a numerical simulation was carried out. The InSb crystal melted at 525 degrees C and then a part of GaSb dissolved into the InSb melt during heating to 706 degrees C and this process led to the formation of InGaSb solution. InGaSb solidified during the cooling process. The experimental and calculation results clearly show that the shape of the solid/liquid interface and compositional profiles in the solution were significantly affected by gravity. Under microgravity, as the Ga compositional profiles were uniform in the radial direction. the interfaces were almost parallel. On the contrary, for normal gravity condition, as large amounts of Ga moved up in the upper region due to buoyancy, the dissolved zone broadened towards gravitational direction. Also. during the cooling process, needle crystals of InGaSb started appearing and the value of x of InxGa1-xSb crystals increased with the decrease of temperature. The GaSb with the (111)B plane dissolved into the InSb melt much more than that of the (111)A plane. (C) 2000 Elsevier Science B.V. All rights reserved.

On detection wavelength and electron-hole wave function overlap of type II InAs/In-x Ga1-x Sb superlattice infrared photodetector

In this paper, the detection wavelength and the electron-hole wave function overlap of InAs/IrxGa1-xSb type II superlattice photodetectors are numerically calculated by using the envelope function and the transfer matrix methods. The band offset is dealt with by employing the model solid theory, which already takes into account the lattice mismatch between InAs and InxGa1-xSb layers. Firstly, the detection wavelength and the wave function overlap are investigated in dependence on the InAs and InxGa1-xSb layer thicknesses, the In mole fraction, and the periodic number. The results indicate that the detection wavelength increases with increasing In mole fraction, InAs and InxGa1-xSb layer thicknesses, respectively. When increasing the periodic number, the detection wavelength first increases distinctly for small periodic numbers then increases very slightly for large period numbers. Secondly, the wave function overlap diminishes with increasing InAs and InxGa1-xSb layer thicknesses, while it enhances with increasing In mole fraction. The dependence of the wave function overlap on the periodic number shows the same trend as that of the detection wavelength on the periodic number. Moreover, for a constant detection wavelength, the wave function overlap becomes greater when the thickness ratio of the InAs over InxGa1-xSb is larger.

Heusler compounds as thermoelectric materials

Heusler compounds as thermoelectric materialsrnrnThis work reports on Heusler and Half Heusler compounds and their thermoelectric properties. Several compounds were synthesized and their resistivity, Seebeck coefficient, thermal conductivity, and the figure of merit were determined. The results are presented in the following chapters.rnrnIn chapter 3 Co was substituted with Ni and Fe in the series TiCo1-x(Fe0.5Ni0.5)xSb. The substitution lead to a reduced loss of Sb during the synthesis. Further the Seebeck coefficient was increased and the thermal conductivity was reduced. These observations can be used to significantly improve the quality of TiCoSb based compounds in thermoelectric applications. rnrnIn chapter 4 the series TiCo1-xNixSnxSb1-x was investigated. Ni was substituted with Co and Sn with Sb. Especially for high Ni concentrations the figure of merit was enhanced compared to unsubstituted TiCoSb. This enhancement is based on the strong reduction of the thermal conductivity. The found values are among the lowest that have been determined up to date for Heusler compounds. rnrnIn chapter 5 Li containing Heusler compounds were theoretically and experimentally investigated. Li containing Heusler compounds are of special interest because the Li atoms scatter phonons efficiently. Therefore the thermal conductivity is decreased. The thermoelectric properties and especially the thermal conductivity are investigated in this chapter.rnrnIn chapter 6 several substitutions of TiCoSb were investigated. In the series TiCo1+xSb additional Co was introduced into the vacancies of the compound and the effect on the thermoelectric properties was measured. In the series TiCo1-xCuxSb Co was substituted with Cu. No significant enhancement of the ZT value were observed. In the series TiCoSb1-xBix Sb was substituted by Bi. The thermoelectric properties were significantly enhanced for small Bi concentrations. The Seebeck coefficient was increased and the resistivity was reduced at the same time. This unusual phenomenon is explained by band structure calculations.rnrnIn chapter 7 the material class of half metallic ferromagnets was investigated as a new materialclass for thermoelectric applications. The 26 valence electron compounds Co2TiSi, Co2TiGe, and Co2TiSn were used as model systems. The transport properties were determined theoretically. Then the properties were measured and compared to the calculated ones. The calculated values are in good agreement with the experimentally determined ones. The observed Seebeck coefficient has a big value and is nearly constant above the Curie temperature. This makes the materials appealing for the use as materials in thermocouples.rn

Wet chemistry synthesis towards nanostructures of thermoelectric antimonides

Die vorliegende Arbeit befasst sich mit der Synthese von nanostrukturierten Antimoniden, wobei die folgenden beiden Themen bearbeitet wurden: rnAus chemischer Sicht wurden neue Synthesewege entwickelt, um Nanopartikel der Verbindungen in den binären Systemen Zn-Sb und Fe-Sb herzustellen (Zn4Sb3, ZnSb, FeSb2, Fe1+xSb). Anders als in konventionellen Festkörperreaktionen, die auf die Synthese von Bulk-Materialien oder Einkristallen zielen, muss die Synthese von Nanopartikeln Agglomerate und Ostwald-Wachstum vermeiden. Daher benötigen annehmbare Reaktionszeiten und vergleichsweise tiefe Reaktionstemperaturen kurze Diffusionswege und tiefe Aktivierungsbarrieren. Demzufolge bedient sich die Synthese der Reaktion von Antimon-Nanopartikeln und geeigneten molekularen oder nanopartikulären Edukten der entsprechenden Übergangsmetalle. Zusätzlich wurden anisotrope ZnSb Strukturen synthetisiert, indem eine Templat-Synthese mit Hilfe von anodisierten Aluminiumoxid- oder Polycarbonat-Membranen angewandt wurde. rnDie erhaltenen Produkte wurden hauptsächlich durch Röntgen-Diffraktion und Elektronenmikroskopie untersucht. Die Auswertung der Pulver Röntgendiffraktions-Daten stellte eine Herausforderung dar, da die Nanostrukturierung und die Anwesenheit von mehreren Phasen zu verbreiterten und überlagernden Reflexen führen. Zusätzliche Fe-Mößbauer Messungen wurden im Falle der Fe-Sb Produkte vorgenommen, um detailliertere Informationen über die genaue Zusammensetzung zu erhalten. Die erstmals hergestellte Phase Zn1+xSb wurde einer detaillierten Kristallstrukturanalyse unterzogen, die mit Hilfe einer neuen Diffraktionsmethode, der automatisierten Elektronen Diffraktions Tomographie, durchgeführt wurde.rnrnAus physikalischer Sicht sind Zn4Sb3, ZnSb und FeSb2 interessante thermoelektrische Materialien, die aufgrund ihrer Fähigkeit thermische in elektrische Energie umzuwandeln, großes Interesse geweckt haben. Nanostrukturierte thermoelektrische Materialien zeigen dabei eine höhere Umwandlungseffizienz zu erhöhen, da deren thermische Leitfähigkeit herabgesetzt ist. Da thermoelektrische Bauteile aus dichten Bulk-Materialien gefertigt werden, spielte die Verfestigung der synthetisierten nanopartikulären Pulver eine große Rolle. Die als „Spark Plasma Sintering“ bezeichnete Methode wurde eingesetzt, um die Proben zu pressen. Dies ermöglicht schnelles Heizen und Abkühlen der Probe und kann so das bei klassischen Heißpress-Methoden unvermeidliche Kristallitwachstum verringern. Die optimalen Bedingungen für das Spark Plasma Sintern zu finden, ist Inhalt von bestehender und weiterführender Forschung. rnEin Problem stellt die Stabilität der Proben während des Sinterns dar. Trotz des schnellen Pressens wurde eine teilweise Zersetzung im Falle des Zn1+xSb beobachtet, wie mit Hilfe von Synchrotrondiffraktionsuntersuchungen aufgedeckt wurde. Morphologie und Dichte der verschiedenen verfestigten Materialien wurden mittels Rasterelektronenmikroskopie und Lasermikroskopie bestimmt. Die Gitterdynamik wurde mit Hilfe von Wärmekapazitätsmessungen- und inelastischer Kern-Streuung untersucht. Die Wärmeleitfähigkeit der nanostrukturierten Materialien ist im Vergleich zu den Festkörpern ist drastisch reduziert - im Falle des FeSb2 um mehr als zwei Größenordnungen. Abhängig von der Zusammensetzung und mechanischen Härte wurden für einen Teil der verfestigten Nanomaterialien die thermoelektrische Eigenschaften, wie Seebeck Koeffizient, elektrische und Wärmeleitfähigkeit, gemessen.rn