Optical control of the spin state of two Mn atoms in a quantum dot

We report on the optical spectroscopy of the spin of two magnetic atoms (Mn) embedded in an individual quantum dot interacting with a single electron, a single exciton, or a single trion. As a result of their interaction to a common entity, the Mn spins become correlated. The dynamics of this process is probed by time-resolved spectroscopy, which permits us to determine an optical orientation time in the range of a few tens of nanoseconds. In addition, we show that the energy of the collective spin states of the two Mn atoms can be tuned through the optical Stark effect induced by a resonant laser field.

Magnetic coupling properties of mn-doped ZnO nanowires: First-principles calculations

Based on the density functional theory, we study the magnetic coupling properties of Mn-doped ZnO nanowires. For the nanowires with passivated surfaces, the antiferromagnetic state is found and the Mn atoms have a clustering tendency. When the distance between two Mn atoms is large, the system energetically favors the paramagnetic or spin-glass state. For the nanowires with unpassivated surfaces, the ferromagnetic (FM) coupling states appear between the two nearest Mn atoms, and the zinc vacancies can further stabilize the FM states between them. The electrons with enough concentration possibly mediate the FM coupling due to the negative exchange splitting of conduction band minimum induced by the s-d coupling, which could be useful in nanomaterial design for spintronics. (C) 2008 American Institute of Physics.

Anomalous photoluminescence of InAs quantum dots implanted by Mn ions

The photoluminescence (PL) of Mn-implanted quantum dot (QD) samples after rapid annealing is studied. It is found that the blue shift of the PL peak of the QDs, introduced by the rapid annealing, decreases abnormally as the implantation dose increases. This anomaly is probably related to the migration of Mn atoms to the InAs QDs during annealing, which leads to strain relaxation when Mn atoms enter InAs QDs or to the suppression of the inter-diffusion of In and Ga atoms when Mn atoms surround QDs. Both effects will suppress the blue shift of the QD PL peaks. The temperature dependence of the PL intensity of the heavily implanted QDs confirms the existence of defect traps around the QDs. (c) 2006 Elsevier B.V. All rights reserved.

Investigation of Mn-doped Si films prepared by magnetron cosputtering

Mn-doped Si films were prepared on Si(001) substrates by magnetron cosputtering and post-annealing process. The structural, morphological and magnetic properties of the films have been investigated. X-ray diffraction results show that the as-prepared film is amorphous. By annealing at 800 degrees C, however, the film is crystallized. There is no secondary phase found except Si in the two films. Chemical mapping shows that no segregation of the Mn atoms appears in the annealed film. Atomic force microscopy images of the films indicate that the annealed film has a granular feature that covers uniformly the film surface while there is no such kind of characteristic in the as-prepared film. The field dependence of magnetization was measured using an alternating gradient magnetometer, and it has been indicated that the annealed film shows room-temperature ferromagnetism. (c) 2006 Elsevier B.V. All rights reserved.

Crystal and magnetic structure of Mn3IrSi

A new ternary Ir-Mn-Si phase with stoichiometry Mn₃IrSi has been synthesized and found to crystallize in the cubic AlAu₄-type structure, space group P2₁3 with Z=4, which is an ordered form of the beta-Mn structure. The unit cell dimension was determined by x-ray powder diffraction to a=6.4973(3) Angstrom. In addition to the crystal structure, we have determined the magnetic structure and properties using superconducting quantum interference device magnetometry and Rietveld refinements of neutron powder diffraction data. A complex noncollinear magnetic structure is found, with magnetic moments of 2.97(4)u(B) at 10 K only on the Mn atoms. The crystal structure consists of a triangular network built up by Mn atoms, on which the moments are rotated 120degrees around the triangle axes. The magnetic unit cell is the same as the crystallographic and carries no net magnetic moment. The Neel temperature was determined to be 210 K. A first-principles study, based on density functional theory in a general noncollinear formulation, reproduces the experimental results with good agreement. The observed magnetic structure is argued to be the result of frustration of antiferromagnetic couplings by the triangular geometry.

L’étude de l’InP et du GaP suite à l’implantation ionique de Mn et à un recuit thermique

Cette thèse est dédiée à l’étude des matériaux InMnP et GaMnP fabriqués par implantation ionique et recuit thermique. Plus précisément nous avons investigué la possibilité de former par implantation ionique des matériaux homogènes (alliages) de InMnP et GaMnP contenant de 1 à 5 % atomiques de Mn qui seraient en état ferromagnétique, pour des possibles applications dans la spintronique. Dans un premier chapitre introductif nous donnons les motivations de cette recherche et faisons une revue de la littérature sur ce sujet. Le deuxième chapitre décrit les principes de l’implantation ionique, qui est la technique utilisée pour la fabrication des échantillons. Les effets de l’énergie, fluence et direction du faisceau ionique sur le profil d’implantation et la formation des dommages seront mis en évidence. Aussi dans ce chapitre nous allons trouver des informations sur les substrats utilisés pour l’implantation. Les techniques expérimentales utilisées pour la caractérisation structurale, chimique et magnétique des échantillons, ainsi que leurs limitations sont présentées dans le troisième chapitre. Quelques principes théoriques du magnétisme nécessaires pour la compréhension des mesures magnétiques se retrouvent dans le chapitre 4. Le cinquième chapitre est dédié à l’étude de la morphologie et des propriétés magnétiques des substrats utilisés pour implantation et le sixième chapitre, à l’étude des échantillons implantés au Mn sans avoir subi un recuit thermique. Notamment nous allons voir dans ce chapitre que l’implantation de Mn à plus que 1016 ions/cm2 amorphise la partie implantée du matériau et le Mn implanté se dispose en profondeur sur un profil gaussien. De point de vue magnétique les atomes implantés se trouvent dans un état paramagnétique entre 5 et 300 K ayant le spin 5/2. Dans le chapitre 7 nous présentons les propriétés des échantillons recuits à basses températures. Nous allons voir que dans ces échantillons la couche implantée est polycristalline et les atomes de Mn sont toujours dans un état paramagnétique. Dans les chapitres 8 et 9, qui sont les plus volumineux, nous présentons les résultats des mesures sur les échantillons recuits à hautes températures : il s’agit d’InP et du GaP implantés au Mn, dans le chapitre 8 et d’InP co-implanté au Mn et au P, dans le chapitre 9. D’abord, dans le chapitre 8 nous allons voir que le recuit à hautes températures mène à une recristallisation épitaxiale du InMnP et du GaMnP; aussi la majorité des atomes de Mn se déplacent vers la surface à cause d’un effet de ségrégation. Dans les régions de la surface, concentrés en Mn, les mesures XRD et TEM identifient la formation de MnP et d’In cristallin. Les mesures magnétiques identifient aussi la présence de MnP ferromagnétique. De plus dans ces mesures on trouve qu’environ 60 % du Mn implanté est en état paramagnétique avec la valeur du spin réduite par rapport à celle trouvée dans les échantillons non-recuits. Dans les échantillons InP co-implantés au Mn et au P la recristallisation est seulement partielle mais l’effet de ségrégation du Mn à la surface est beaucoup réduit. Dans ce cas plus que 50 % du Mn forme des particules MnP et le restant est en état paramagnétique au spin 5/2, dilué dans la matrice de l’InP. Finalement dans le dernier chapitre, 10, nous présentons les conclusions principales auxquels nous sommes arrivés et discutons les résultats et leurs implications.

Efeitos da adição de átomos de Mn na rede do GaN via métodos de estrutura eletrônica

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Optical initialization, readout, and dynamics of a Mn spin in a quantum dot

We have investigated the spin preparation efficiency by optical pumping of individual Mn atoms embedded in CdTe/ZnTe quantum dots. Monitoring the time dependence of the intensity of the fluorescence during the resonant optical pumping process in individual quantum dots allows to directly probe the dynamics of the initialization of the Mn spin. This technique presents the convenience of including preparation and readout of the Mn spin in the same step. Our measurements demonstrate that Mn spin initialization, at zero magnetic field, can reach an efficiency of 75% and occurs in the tens of nanoseconds range when a laser resonantly drives at saturation one of the quantum-dot transition. We observe that the efficiency of optical pumping changes from dot-to-dot and is affected by a magnetic field of a few tens of millitesla applied in Voigt or Faraday configuration. This is attributed to the local strain distribution at the Mn location which predominantly determines the dynamics of the Mn spin under weak magnetic field. The spectral distribution of the spin-flip-scattered photons from quantum dots presenting a weak optical pumping efficiency reveals a significant spin relaxation for the exciton split in the exchange field of the Mn spin.

Mn-doped II-VI quantum dots: artificial molecular magnets

The notion of artificial atom relies on the capability to change the number of carriers one by one in semiconductor quantum dots, and the resulting changes in their electronic structure. Organic molecules with transition metal atoms that have a net magnetic moment and display hysteretic behaviour are known as single molecule magnets (SMM). The fabrication of CdTe quantum dots chemically doped with a controlled number of Mn atoms and with a number of carriers controlled either electrically or optically paves the way towards a new concept in nanomagnetism: the artificial single molecule magnet. Here we study the magnetic properties of a Mn-doped CdTe quantum dot for different charge states and show to what extent they behave like a single molecule magnet.

Combined atom probe tomography and density functional theory investigation of the Al off-stoichiometry of κ-carbides in an austenitic Fe-Mn-Al-C low density steel

We report on the investigation of the off-stoichiometry and site-occupancy of κ-carbide precipitates within an austenitic (γ), Fe-29.8Mn-7.7Al-1.3C (wt.%) alloy using a combination of atom probe tomography and density functional theory. The chemical composition of the κ-carbides as measured by atom probe tomography indicates depletion of both interstitial C and substitutional Al, in comparison to the ideal stoichiometric L′12 bulk perovskite. In this work we demonstrate that both these effects are coupled. The off-stoichiometric concentration of Al can, to a certain extent, be explained by strain caused by the κ/γ mismatch, which facilitates occupation of Al sites in κ-carbide by Mn atoms (MnγAl anti-site defects). The large anti-site concentrations observed by our experiments, however, can only be stabilized if there are C vacancies in the vicinity of the anti-site.

An investigation of structural, magnetic and dielectric properties of R2NiMnO6 (R = rare earth, Y)

We have investigated the structure, magnetic and dielectric properties of the double perovskite oxides, R2NiMnO6 (R = Pr, Nd, Sm, Gd, Tb, Dy, Ho and Y). We could refine powder X-ray diffraction patterns of all the phases on the basis of monoclinic (P2(1)/n) double perovskite structure where Ni and Mn atoms are ordered at 2c and 2d sites, respectively. All the phases are ferromagnetic insulators exhibiting relatively low dielectric loss and dielectric constants in the range 15-25. The ferromagnetic ordering temperature of the R2NiMnO6 series seems to correlate better with the radius of R3+ atoms than with the average Ni-O-Mn angle (phi) in the double perovskite structure. These results are consistent with all samples having Mn4+ and Ni2+ With minimal antisite disorder.

Spin-Valve-Like Magnetoresistance in Mn2NiGa at Room Temperature

Spin valves have revolutionized the field of magnetic recording and memory devices. Spin valves are generally realized in thin film heterostructures, where two ferromagnetic (FM) layers are separated by a nonmagnetic conducting layer. Here, we demonstrate spin-valve-like magnetoresistance at room temperature in a bulk ferrimagnetic material that exhibits a magnetic shape memory effect. The origin of this unexpected behavior in Mn2NiGa has been investigated by neutron diffraction, magnetization, and ab initio theoretical calculations. The refinement of the neutron diffraction pattern shows the presence of antisite disorder where about 13% of the Ga sites are occupied by Mn atoms. On the basis of the magnetic structure obtained from neutron diffraction and theoretical calculations, we establish that these antisite defects cause the formation of FM nanoclusters with parallel alignment of Mn spin moments in a Mn2NiGa bulk lattice that has antiparallel Mn spin moments. The direction of the Mn moments in the soft FM cluster reverses with the external magnetic field. This causes a rotation or tilt in the antiparallel Mn moments at the cluster-lattice interface resulting in the observed asymmetry in magnetoresistance.

Room-temperature ferromagnetic semiconductor MnxGa1-xSb

Ferromagnetic semiconductor MnxGa1-xSb single crystals were fabricated by Mn-ions implantation, deposition, and the post annealing. Magnetic hysteresis-loops in the MnxGa1-xSb single crystals were obtained at room temperature (300 K). The structure of the ferromagnetic semiconductor MnxGa1-xSb single crystal was analyzed by Xray diffraction. The distribution of carrier concentrations in MnxGa1-xSb was investigated by electrochemical capacitance- voltage profiler. The content of Mn in MnxGa1-xSb varied gradually from x = 0.09 near the surface to x = 0 in the wafer inner analyzed by X-ray diffraction. Electrochemical capacitance-voltage profiler reveals that the concentration of p-type carriers in MnxGa1-xSb is as high as 1 1021 cm-3, indicating that most of the Mn atoms in MnxGa1-xSb take the site of Ga, and play a role of acceptors.

Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler

Depth profiles of carrier concentrations in GaMnSb/GaSb are investigated by electrochemistry capacitance-voltage profiler and electrolyte of Tiron. The carrier concentration in GaMnSb/GaSb measured by this method is coincident with the results of Hall and X-ray diffraction measurements. It is indicated that most of the Mn atoms in GaMnSb take the site of Ga, play a role of acceptors, and provide shallow acceptor level(s).

Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy

The Gal(1-x)Mn(x)Sb epilayer was prepared on the n-type GaSb substrate by liquid phase epitaxy. The structure of the Gal(1-x)Mn(x)Sb epilayer was analyzed by double-crystal X-ray diffraction. From the difference of the lattice constant between the GaSb substrate and the Ga1-xMnxSb epilayer, the Mn content in the Ga1-xMnxSb epilayer were calculated as x = 0.016. The elemental composition of Ga1-xMnxSb epilayer was analyzed by energy dispersive spectrometer. The carrier concentration was obtained by Hall measurement. The hole concentration in the Ga1-xMnxSb epilayer is 4.06 x 10(19)cm(-3). It indicates that most of the Mn atoms in Ga1-xMnxSb take the site of Ga, and play a role of acceptors. The current-voltage curve of the Ga1-xMnxSb/GaSb heterostructure was measured, and the rectifying effect is obvious. (C) 2003 Elsevier B.V. All rights reserved.