Intensity-modulating characteristics of a laser diode subjected to optical injection

We have found that the optical power of a laser diode (LD) does not change with the injected light intensity that is modulated when its injection current is at some specific values. The amplitude of optical power change of the LD varies periodically with the increase of the injection current. It is made clear through theoretical analysis that these phenomena are caused by gain compression and interband carrier absorption of the LD that depend on longitudinal mode competition, bandgap-shrinkage effects, thermal conduction, and so on. Our experimental results make it easy to eliminate optical power change of LDs. We only need to choose a proper value of the injection current. (c) 2005 Optical Society of America.

The junction temperature and forward voltage relationship of GaN-based laser diode

In GaAs-based light-emitting diode (LED) or laser diode (LD), the forward voltage (V) will decrease linearly with the increasing junction temperature (T). This can be used as a convenient method to measure the junction temperature. In GaN-based LED, the relationship is linear too. But in GaN-based LD, the acceptor M (g) in p-GaN material can not ionize completely at-room temperature, and the carrier density will change with temperature. But we find finally that, this change won't lead to a nonlinear relationship of V-T. Our experiments show that it is Linear too.

1.55 mu m spot-size converter with monolithically integrated laser diode by conventional process

A novel 1.55 mum laser diode (LD) with monolithically integrated spot-size converter (SSC) is designed and fabricated using conventional photolithography and the chemical wet etching process. For the laser diode, a ridge double-core structure is employed. For the spot-size converter, a buried double-waveguide structure is incorporated. The laterally tapered active core is designed and optically combined with the thin passive core to control the size of the mode. The threshold current was measured to be 40 mA together with high slope efficiency of 0.35 W A(-1). The beam divergence angles in the horizontal and vertical directions were as small as 14.9degrees and 18.2degrees, respectively.

高稳定激光二极管抽运Nd∶YLF再生放大器

设计并实现了一种放大纳秒激光脉冲的高稳定的激光二极管(LD)抽运Nd∶YLF再生放大器。为了获得高稳定的输出,再生放大器工作在饱和状态。此时,再生放大器输出稳定性最好,而且注入激光脉冲能量波动引起的输出激光脉冲波动被抑制。由于增益饱和效应,再生放大器输出脉冲出现时域波形失真,附加后缀脉冲能够减弱时域波形失真。放大器工作波长1053nm,工作频率1Hz。输入240pJ的3ns方波激光脉冲,输出激光脉冲能量4.2mJ,总增益大于107,不稳定度小于1%(均方根),方波扭曲1.33。为3ns方波激光脉冲引入其本身幅度0.75倍的后缀脉冲,输出激光脉冲方波扭曲由1.33降至1.17。

Growth and spectral properties of Yb : FAP single crystal

In this paper, single crystal of ytterbium (Yb) doped Ca-5(PO4)(3)F (FAP) has been grown along the c-axis by using the Czochralski method. The segregation coefficients of Yb3+ in the Yb:FAP crystal has been determined by ICP-AES method. The absorption spectrum, fluorescence spectrum and fluorescence lifetime of the Yb:FAP crystal has been also measured at room temperature. In the absorption spectra, there are two absorption bands at 904 and 982 nm, respectively, which are suitable for InGaAs diode laser pumping. The absorption cross-section (sigma(abs)) is 5.117 x 10(-20) cm(2) with an FWHM of 4 nm at 982 nm. The emission cross-section is (sigma(em)) 3.678 x 10(-20) cm(2) at 1042 nm. Favorable values of the absorption cross-section at about 982 nm are promising candidates for laser diode (LD) pumping. (c) 2005 Elsevier B.V. All rights reserved.

A laser-diode-pumped acoustic-optic Q-switched Nd:YVO4 slab laser with a hybrid resonator

A 32.1 W laser-diode-stack pumped acoustic-optic Q-switched Nd:YVO4 slab laser with hybrid resonator at 1064 nm was demonstrated with the pumping power of 112 W and repetition rate of 40 kHz, the pulse duration was 32.47 ns. The slope efficiency and optical-to-optical efficiency were 37 and 28.7%, respectively. At the repetition rate of 20 kHz and pumping power of 90 W, the average output power and pulse duration were 20.4 W and 20.43 ns, respectively. With the pumping power of 112 W, the beam quality M-2 factors in CW operation were measured to be 1.3 in stable direction and 1.6 in unstable direction.

Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature

Room-temperature operation of cw GaN based multi-quantum-well laser diodes (LDs) is demonstrated. The LD structure is grown on a sapphire (0001) substrate by metalorganic chemical vapour deposition. A 2.5 mu m x 800 mu m ridge waveguide structure is fabricated. The electrical and optical characteristics of the laser diode under direct current injection at room temperature are investigated. The threshold current and voltage of the LD under cw operation are 110mA and 10.5V, respectively. Thermal induced series resistance decrease and emission wavelength red-shift are observed as the injection current is increased. The full width at half maximum for the parallel and perpendicular far field pattern (FFP) are 12 degrees and 32 degrees, respectively.

Laser diode integrated with a dual-waveguide spot-size converter by low-energy ion implantation quantum well intermixing

A ridge laser diode monolithically integrated with a buried-ridge-structure dual-waveguide spot-size converter operating at 1.58 mu m is successfully fabricated by means of low-energy ion implantation quantum well intermixing and asymmetric twin waveguide technology. The passive waveguide is optically combined with a laterally tapered active core to control the mode size. The devices emit in a single transverse and quasi single longitudinal mode with a side mode suppression ratio of 40.0dB although no grating is fabricated in the LD region. The threshold current is 50 mA. The beam divergence angles in the horizontal and vertical directions are as small as 7.3 degrees x 18.0 degrees, respectively, resulting in 3.0dB coupling loss With a cleaved single-mode optical fibre.

4-W single transverse mode Yb3+-doped fiber laser pumped by 915-nm laser diode array

A cladding-pumped ytterbium-doped fiber laser is described in this letter. Using unusual pumping source with 915-nm wavelength, slope efficiency up to 75% with respect to absorbed input power and output power is obtained, a maximum output power of 4.006 W with fundamental mode is measured.

Optimal distance from high power laser diode to cylindrical microlens in a coupling system

In a practical coupling system, a cylindrical microlens is used to collimate the emission of a high powerlaser diode (LD) in the dimension perpendicular to the junction plane. Using passive alignment, the LD isplaced in the focus of the cylindrical microlens generally, regardless of the performance of the multimodeoptical fiber and the LD. In this paper, a more complete analysis is arrived at by ray-tracing technique,by which the angle θ of the ray after refraction is computed as a function of the angle θo of the ray beforerefraction. The focus of the cylindrical microlens is not always the optimal position of the LD. In fact, inorder to achieve a higher coupling efficiency, the optimal distance from the LD to the cylindrical microlensis dependent on not only the radius R and the index of refraction n of the cylindrical microlens, but alsothe divergence angle of the LD in the dimension perpendicular to the junction plane and the numericalaperture (NA) of the multimode optical fiber. The results of this discussion are in good agreement withexperimental results.

Multimodal spectral control of a quantum-dot diode laser for THz difference frequency generation

Generation of stable dual and/or multiple longitudinal modes emitted from a single quantum dot (QD) laser diode (LD) over a broad wavelength range by using volume Bragg gratings (VBG's) in an external cavity setup is reported. The LD operates in both the ground and excited states and the gratings give a dual-mode separation around each emission peak of 5 nm, which is suitable as a continuous wave (CW) optical pump signal for a terahertz (THz) photomixer device. The setup also generates dual modes around both 1180m and 1260 nm simultaneously, giving four simultaneous narrow linewidth modes comprising two simultaneous difference frequency pump signals. (C) 2011 American Institute of Physics.