926 resultados para INSULATING GAP


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Phenomenological orbital-polarizition (OP) terms have been repeatedly introduced in the single-particle equations of spin-density-functional theory, in order to improve the description of orbital magnetic moments in systems containing transition metal ions. Here we show that these ad hoc corrections can be interpreted as approximations to the exchange-correlation vector potential A(xc) of current-density functional theory (CDFT). This connection provides additional information on both approaches: phenomenological OP terms are connected to first-principles theory, leading to a rationale for their empirical success and a reassessment of their limitations and the approximations made in their derivation. Conversely, the connection of OP terms with CDFT leads to a set of simple approximations to the CDFT potential A(xc), with a number of desirable features that are absent from electron-gas-based functionals. (C) 2008 Wiley Periodicals, Inc.

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Firing delays of a simple triggered vacuum gap are reported in this paper. The effects of insulating materials in the auxiliary gap, auxiliary gap current, main gap current and electrode separation on the delay have been investigated. The presence of insulating material in the auxiliary gap having low auxiliary gap resistance appears to exhibit large delay. Delay decreases considerably with increase of current in the auxiliary and the main gaps, but it increases with increase of electrode separation. The scatter in the delay is less than 25 ps and 500 ps with supramica (Mycalex Corporation of America) and silicon carbide respectively at lower values of auxiliary gap current and it becomes negligible for supramica at auxiliary gap currents greater than 6A. This investigation appears to indicate that the simple device can be used as a fast switch.

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Describes a simple triggered vacuum gap developed for initiating electric arcs in vacuum which uses the property that the voltage required to breakdown a gap in vacuum in the presence of a solid insulating material is considerably less than the voltage required in the absence of such material. In this triggered vacuum gap a solid insulating material is used in the angular space between the main cathode and the concentric trigger electrode forming the auxiliary gap. Different materials like epoxy resin, Teflon (PTFE) and mica have been used. The trigger voltage was found to vary in the range 560-1840 V. The results with epoxy and Teflon were unsatisfactory because the trigger voltages showed wide scatter and the auxiliary gap was soon bridged by metal particles eroded from the electrodes. Though the trigger voltages required with mica were relatively high, consistent triggering could be obtained for a large number of trials before the auxiliary gap was bridged. This was probably due to better thermal stability of mica as compared with either epoxy or Teflon.

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We study the electronic structure of NaCuO2 by analysing experimental core level photoemission and X-ray absorption spectra using a cluster as well as an Anderson impurity Hamiltonian including the band structure of the oxygen sublattice. We show that the X-ray absorption results unambiguously establish a negative value of the charge transfer energy, A. Further, mean-field calculations for the edge-shared one-dimensional CuO2 lattice of NaCuO2 within the multiband Hubbard Hamiltonian show that the origin of the insulating nature lies in the band structure rather than in the correlation effects. LMTO-ASA band structure calculations suggest that NaCuO2 is an insulator with a gap of around 1 eV.

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The electronic structure of vanadium sesquioxide V2O3 in its different phases has been calculated using the screened exchange hybrid density functional. The hybrid functional accurately reproduces the experimental electronic properties of all three phases, the paramagnetic metal (PM) phase, the anti-ferromagnetic insulating phase, and the Cr-doped paramagnetic insulating (PI) phase. We find that a fully relaxed supercell model of the Cr-doped PI phase based on the corundum structure has a monoclinic-like local strain around the substitutional Cr atoms. This is found to drive the PI-PM transition, consistent with a Peierls-Mott transition. The PI phase has a calculated band gap of 0.15 eV, in good agreement with experiment.

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Properties of Fe-doped semi-insulating (SI) InP with different iron concentrations are studied by using Hall effect, current-voltage (I-V), photoluminescence spectroscopy (PL) and photocurrent spectroscopy (PC) measurements. I-V characteristics of SI InP strongly depend on Fe doping concentration. Fe doping concentration also influences optical properties and defective formation in as-grown SI InP. Band-gap narrowing phenomenon and defects in Fe doped SI InP are studied using PI and PC.

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Complexes of vacancy at indium site with one to four hydrogen atoms and isolated hydrogen or hydrogen dimer and other infrared absorption lines, tentatively be assigned to hydrogen related defects were investigated by FTIR. Hydrogen cam passivate imperfections, thereby eliminating detrimental electronic states from the energy bandgap. Incorporated hydrogen can introduce extended defects and generate electrically-active defects. Hydrogen also can acts as an actuator for creating of antistructure defects. Isolated hydrogen related defects(e.. H-2*) may play an important role in the conversion of the annealed wafers from semiconducting to the semi-insulating behavior. H-2* may be a deep donor, whose energy level is very near the iron deep acceptor level in the energy gap.

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The metal–insulator transition of VO2 so far has evaded an accurate description by density functional theory. The screened hybrid functional of Heyd, Scuseria and Ernzerhof leads to reasonable solutions for both the low-temperature monoclinic and high-temperature rutile phases only if spin polarization is excluded from the calculations. We explore whether a satisfactory agreement with experiment can be achieved by tuning the fraction of Hartree Fock exchange (a) in the density functional. It is found that two branches of locally stable solutions exist for the rutile phase for 12:5% 6 a 6 20%. One is metallic and has the correct stability as compared to the monoclinic phase, the other is insulating with lower energy than the metallic branch. We discuss these observations based on the V 3d orbital occupations and conclude that a ¼ 10% is the best possible choice for spin-polarized VO2 calculations.

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Starting from a minimal model for a two-dimensional nodal loop semimetal, we study the effect of chiral mass gap terms. The resulting Dirac loop anomalous Hall insulator’s Chern number is the phase-winding number of the mass gap terms on the loop.We provide simple lattice models, analyze the topological phases, and generalize a previous index characterizing topological transitions. The responses of the Dirac loop anomalous Hall and quantum spin Hall insulators to a magnetic field’s vector potential are also studied both in weak- and strong-field regimes, as well as the edge states in a ribbon geometry.

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Timely feedback is a vital component in the learning process. It is especially important for beginner students in Information Technology since many have not yet formed an effective internal model of a computer that they can use to construct viable knowledge. Research has shown that learning efficiency is increased if immediate feedback is provided for students. Automatic analysis of student programs has the potential to provide immediate feedback for students and to assist teaching staff in the marking process. This paper describes a “fill in the gap” programming analysis framework which tests students’ solutions and gives feedback on their correctness, detects logic errors and provides hints on how to fix these errors. Currently, the framework is being used with the Environment for Learning to Programming (ELP) system at Queensland University of Technology (QUT); however, the framework can be integrated into any existing online learning environment or programming Integrated Development Environment (IDE)