Relief grating induced by photo-expansion in Ga-Ge-S and Ga-Ge-As-S glasses

We report the fabrication of relief diffraction gratings recorded on a surface of photosensitive Ga10Ge25S65 and Ga5Ge25As5S65 glasses by means of interference of two UV laser beams at 351 nm. The diffraction efficiency (eta) of first diffraction order was measured. Atomic-force-microscope (AFM) was used to perform a 3D imaging analysis of the sample surface topography that shows the superposition of an imprinted grating over the topography of the glass. The change in the absorption edge and the refractive index has been evaluated and a structural approach of the relief grating on the glass surface has been discussed.

Above bandgap induced photoexpansion and photobleaching in Ga-Ge-S based glasses

Photoexpansion and photobleaching effects have been examined in glass compositions Ga10Ge25S65 and Ga5Ge25As5S65. Such compositions are promising for optical storage and planar waveguide applications. To evaluate the photoinduced effect, samples were exposed to 351 nm light, varying power density (3-10 W/cm(2)) and exposure time (0-120 min). The exposed areas have been analyzed using atomic force microscopy (AFM) and an expansion of 800 nm is observed for composition Ga10Ge25S65 exposed during 120 min and 5 W/cm(2) power density. The optical absorption edge measured by a spectrophotometer indicates a blue shift (80 nm) after illumination in the composition Ga10Ge25S65. The morphology was examined using a scanning electron microscopy (SEM). The chemical compositions measured using a energy dispersive analyzer (EDX) indicate an increase of the number of sulfur atoms in the irradiated area. (C) 2001 Elsevier B.V. B.V. All rights reserved.

Influence of Ga incorporation on photoinduced phenomena in Ge-S based glasses

To study the influence of Ga addition on photoinduced effect, GaGeS glasses with constant atomic ratio S/Ge = 2.6 have been prepared. Using Raman spectroscopy, we have reported the effect of Ga on the structural behavior of these glasses. An increase of the glass transition temperature T(g), the linear refractive index and the density have been observed with increasing gallium content. The photoinduced phenomena have been examined through the influence of time exposure and power density, when exposed to above light bandgap (3.53 eV). The correlation between photoinduced phenomena and Ga content in such glasses are shown hereby. (C) 2009 Elsevier B.V. All rights reserved.

Investigations on Photoconductivity and Electrical Switiching in Selected Chalcogenide Glasses

In this thesis, we present the results of our investigations on the photoconducting and electrical switching properties of selected chalcogenide glass systems. We have used XRD and X-ray photoelectron spectroscopy (XPS) analysis for confinuing the amorphous nature of these materials and for confirming their constituents respectively.Photoconductivity is the enhancement in electrical conductivity of materials brought about by the motion of charge carriers excited by absorbed radiation. The phenomenon involves absorption, photogeneration, recombination and transport processes and it gives good insight into the density of states in the energy gap of solids due to the presence of impurities and lattice defects. Photoconductivity measurements lead to the determination of such important parameters as quantum efficiency, photosensiti\'ity, spectral sensitivity and carrier lifetime. Extensive research work on photoconducting properties of amorphous semiconductors has resulted in the development of a variety of very sensitive photodetectors. Photoconductors are finding newer and newer uses eyery day. CdS, CdSe. Sb2S3, Se, ZnO etc, are typical photoconducting materials which are used in devices like vidicons, light amplifiers, xerography equipment etc.Electrical switching is another interesting and important property possessed by several Te based chalcogenides. Switching is the rapid and reversible transition between a highly resistive OFF state, driven by an external electric field and characterized by a threshold voltage, and a low resistivity ON state, Switching can be either threshold type or memory type. The phenomenon of switching could find applications in areas like infonnation storage, electrical power control etc. Investigations on electrical switching in chalcogenide glasses help in understanding the mechanism of switching which is necessary to select and modify materials for specific switching applications.Analysis of XRD pattern gives no further infonuation about amorphous materials than revealing their disordered structure whereas x-ray photoelectron spectroscopy,XPS) provides information about the different constituents present in the material. Also it gives binding energies (b.e.) of an element in different compounds and hence b.e. shift from the elemental form.Our investigations have been concentrated on the bulk glasses, Ge-In-Se, Ge-Bi-Se and As-Sb-Se for photoconductivity measurements and In-Te for electrical switching. The photoconducting properties of Ge-Sb-Se thin films prepared by sputtering technique have also been studied. The bulk glasses for the present investigations are prepared by the melt quenching technique and are annealed for half an hour at temperatures just below their respective glass transition temperatures. The dependence of photoconducting propenies on composition and temperature are investigated in each system. The electrical switching characteristics of In-Te system are also studied with different compositions and by varying the temperature.

Photo-induced effects in Ge25Ga10S65 glasses studied by XPS and XAS

The present paper focuses on the structural, electronic, and compositional properties of Ge25Ga10S65 glasses before and after UV illumination in air using X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) techniques. The XPS Ge 3d spectra reveal the existence of Ge-O bonds in the surface region of illuminated glass. In the case of this sample, XAS O K-edge spectra showed the formation of an enriched region of oxygen atoms in the glass bulk, indicating a different bonding structure of oxygen at the surface and in the bulk of the glass. Moreover, the structural changes that occur after UV illumination in the glass sample are identified as the formation of a homogeneous germanium oxide surface layer followed by an intermediary Ge25Ga10S65-yOz subsurface region. (c) 2005 Elsevier B.V. All rights reserved.

Eu3+ luminescence in tellurite glasses with gold nanostructures

Luminescence properties of Eu3+ doped TeO2-PbO-GeO2 glasses containing gold nanoparticles (NPs) were investigated. The emission spectra of the samples exhibited enhancement of Eu3+ luminescence due to the presence of gold NPs. The emission at 614 nm. due to the Eu3+ hypersensitive transition D-5(0)-F-7(2), is much influenced by the gold NPs and increases by approximate to 100%. for samples heat-treated at 350 degrees C during 41 h. (c) 2007 Elsevier B.V. All rights reserved.

Chaotic, memory, and cooling rate effects in spin glasses: Evaluation of the Edwards-Anderson model

We investigate chaotic, memory, and cooling rate effects in the three-dimensional Edwards-Anderson model by doing thermoremanent (TRM) and ac susceptibility numerical experiments and making a detailed comparison with laboratory experiments on spin glasses. In contrast to the experiments, the Edwards-Anderson model does not show any trace of reinitialization processes in temperature change experiments (TRM or ac). A detailed comparison with ac relaxation experiments in the presence of dc magnetic field or coupling distribution perturbations reveals that the absence of chaotic effects in the Edwards-Anderson model is a consequence of the presence of strong cooling rate effects. We discuss possible solutions to this discrepancy, in particular the smallness of the time scales reached in numerical experiments, but we also question the validity of the Edwards-Anderson model to reproduce the experimental results.

Pressure dependence of spin fluctuations in metallic glasses Zrâ â Niâ â ,Zrâ â (Nix/Feâ â â -x)â â and /Zrx/feâ â â -x

The superconducting transition temperature Tc of metallic glasses ZrxFelOO-x (x=80, 75), Zr75(NixFelOO-x)25 (x=75, 50, 25), and CU2SZr75 were measured under quasi-hydrostatic pressure up to 8 OPa (80kbar). The volume (pressure) dependence of the electron-phonon coupling parameters Aep for CU25Zr75 was calculated using the McMillan equatio11. Using this volume dependence of Aep and the modified McMillan equation which incorporates spin-fluctuations, the volume dependence of the spin fluctuation parameter, Asf, was determined in Zr75Ni25, ZrxFelOO-x , a11d Zr75(NixFelOO-x)25. It was found that with increasing pressure, spinfluctuations are suppressed at a faster rate in ZrxFe lOO-x and Zr75(NixFelOO-x)25, as Fe concentration is increased. The rate of suppression of spin-fluctuations with pressure was also found to be higher in Fe-Zr glasses than in Ni-Zr glasses of similar composition.

Chaotic, memory, and cooling rate effects in spin glasses: Evaluation of the Edwards-Anderson model

We investigate chaotic, memory, and cooling rate effects in the three-dimensional Edwards-Anderson model by doing thermoremanent (TRM) and ac susceptibility numerical experiments and making a detailed comparison with laboratory experiments on spin glasses. In contrast to the experiments, the Edwards-Anderson model does not show any trace of reinitialization processes in temperature change experiments (TRM or ac). A detailed comparison with ac relaxation experiments in the presence of dc magnetic field or coupling distribution perturbations reveals that the absence of chaotic effects in the Edwards-Anderson model is a consequence of the presence of strong cooling rate effects. We discuss possible solutions to this discrepancy, in particular the smallness of the time scales reached in numerical experiments, but we also question the validity of the Edwards-Anderson model to reproduce the experimental results.

EPR of gamma-induced paramagnetic centers in tellurite glasses

Intrinsic paramagnetic responses were observed in the 60TeO(2)-25ZnO-15Na(2)O and 85TeO(2)-15Na(2)O mol% glasses, after gamma-irradiation at room temperature: (1) a shoulder at g(1) = g(parallel to) = 2.02 +/- 0.01 and an estimated g(perpendicular to)similar to 2.0 attributed to tellurium-oxygen hole center (TeOHC); (2) a narrow resonance at g(2)= 1.9960 +/- 0.0005 related to the modifiers and (3) a resolved resonance at g(3) = 1.9700 +/- 0.0005 ascribed to a tellurium electron center (TeEC) of an electron trapped at an oxygen vacancy (V(o)(+)) in a tellurium oxide structural center. It is suggested that the creation of (NBO(-),V(o)(+)) pair follows a mechanism where the modifier oxide molecule actuates as a catalyser. An additional model for the NBO radiolysis produced by the gamma-irradiation is proposed on the basis of the evolution of the g(1), g(2) and g(3) intensities with increasing dose (kGy). Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.

A model for the stabilization of atomic hydrogen centers in borate glasses

A previously proposed model describing the trapping site of the interstitial atomic hydrogen in borate glasses is analyzed. In this model the atomic hydrogen is stabilized at the centers of oxygen polygons belonging to B-O ring structures in the glass network by van der Waals forces. The previously reported atomic hydrogen isothermal decay experimental data are discussed in the light of this microscopic model. A coupled differential equation system of the observed decay kinetics was solved numerically using the Runge Kutta method. The experimental untrapping activation energy of 0.7 x 10(-19) J is in good agreement with the calculated results of dispersion interaction between the stabilized atomic hydrogen and the neighboring oxygen atoms at the vertices of hexagonal ring structures. (C) 2009 Elsevier B.V. All rights reserved.

A GC-FID Method to Determine Styrene in Polystyrene Glasses

The styrene levels of polystyrene (PS) glasses from the most consumed brands of disposable glasses intended for water and coffee in Brazil were determined. A GC-FID method was developed and validated, showing good precision and accuracy. The method was successfully used to determine styrene in 11 PS glass brands. The styrene levels ranged from 1.68 to 43.69 mg/100 g glass, depending on the kind of polymer, thickness, and glass brand. It could be used to control the content of styrene in the polymer. The migration of styrene from the glasses into water and 20 % ethanol was not detected.

Avrami exponent of crystallization in tellurite glasses

Nucleation process and crystal growth for three samples of the (20-x)Li(2)O-80TeO(2)-xWO(3) glass system were studied using X-ray diffraction and differential scanning calorimetry techniques. X-ray diffraction data confirmed the amorphous characteristic of the as-quenched samples and indicated the growth of crystalline phases formed due to the thermal treatment for annealed samples. These results reveal the presence of three distinct gamma-TeO(2), alpha-TeO(2) and alpha-Li(2)Te(2)O(5) crystalline phases in the TL sample, and two distinct alpha-TeO(2) and gamma-TeO(2) crystalline phases in the TLW5 and TLW10 samples. The activation energy and the Avrami exponent were determined from DSC measurements. The activation energy values X-ray diffraction data of the TLW10 glass sample suggest that gamma-TeO(2) phase occur before the alpha-TeO(2). The results obtained for the Avrami exponent point to that the nucleation process is volumetric and that the crystal growth is two or three-dimensional.

Relation among optical, thermal and thermo-optical properties and niobium concentration in tellurite glasses

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)