Gd2O3: Eu Nanoparticle-Based Poly(vinylidene fluoride) Composites for Indirect X-ray Detection

Polymer based scintillator composites have been fabricated by combining poly(vinylidene fluoride) (PVDF) and Gd2O3:Eu nanoparticles (50nm). PVDF has been used since it is a flexible and stable binder matrix and highly resistance to thermal and light deterioration. Gd2O3:Eu has been selected as scintillator material due to its wide band gap, high density and suitable visible light yield. The structural, mechanical, thermal and electrical characteristics of the composites were studied as a function of filler content, together with their performance as scintillator material. The introduction of Gd2O3:Eu nanoparticles into the PVDF matrix does not influence the morphology of the polymer or the degree of crystallinity. On the other hand, an increase of the Young´s modulus with respect to PVDF matrix is observed for filler contents of 0.1-0.75 wt.%. The introduction of Gd2O3:Eu into the PVDF matrix increases dielectric constant and DC electrical conductivity as well as the visible light yield in the nanocomposite, being this increase dependent upon Gd2O3:Eu content and X-ray input power. In this way, Gd2O3:Eu/PVDF composites shows suitable characteristics to be used as X-ray radiation transducers, in particular for large area applications.

Gd2O3: Eu3+/PPO/POPOP/PS composites for digital imaging radiation detectors

Polymer based scintillator composites have been produced by combining polystyrene (PS) and Gd2O3:Eu3+ scintillator nanoparticles. Polystyrene has been used since it is a flexible and stable binder matrix, resistant to thermal and light deterioration and with suitable optical properties. Gd2O3:Eu3+ has been selected as scintillator material due to its wide band gap, high density and visible light yield. The optical, thermal and electrical characteristics of the composites were studied as a function of filler content, together with their performance as scintillator material. Additionally 1wt.% of 2,5 dipheniloxazol (PPO) and 0.01wt.% of (1,4-bis(2-(5-phenioxazolil))-benzol (POPOP) were introduced in the polymer matrix in order to strongly improve light yield, i.e. the measured intensity of the output visible radiation, under X-ray irradiation. Whereas increasing scintillator filler concentration (from 0.25wt.% to 7.5wt.%) increases scintillator light yield, decreases the optical transparency of the composite. The addition of PPO and POPOP, strongly increased the overall 2 transduction performance of the composite due to specific absorption and re-emission processes. It is thus shown that Gd2O3:Eu3+/PPO/POPOP/PS composites in 0.25 wt.% of scintillator content with fluorescence molecules is suitable for the development of innovate large area X-ray radiation detectors with huge demand from the industries.

A route to obtain Gd2O3:Nd3+ with different particle size

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

The effect of EU3+ ion doping concentration in Gd2O3 fine spherical particles

This work reports on the preparation of Gd2O3, cubic system, with spherical particles, narrow size distribution, whether or not doped with 1-5 at.% of Eu3+ and the influence of Eu3+ concentration on optical and morphological properties. Average diameter and size distribution particle analyses were performed for all samples from SEM results. Doped samples were also investigated by luminescence spectroscopy and emission kinetic measurements. All oxide samples present a particle average diameter distribution range from 110 to 150 nm and a decrease of particle average diameter with the presence of Eu3+. The particle size decrease is almost the same for all samples with different doping ion concentration. Therefore, the presence of doping ion may be inhibiting particle growth after the nucleation process. From spectroscopic studies, the doping ion distribution in the surface of oxide samples can be considered homogeneous because concentration quenching is not observed, as well as a significant difference among the calculated lifetime for each sample. (C) 2002 Elsevier B.V. B.V. All rights reserved.

New X-ray powder diffraction data and Rietveld refinement for Gd2O3 monodispersed fine spherical particles

Nominally pure Gd2O3 C-form structure from basic carbonate fine spherical particles and its differences concerning the XRD data among literature patterns using Rietveld method is reported. Gd2O3: Eu3+ from basic carbonate and Gd2O3 from oxalate were also investigated. All samples, except the one from oxalate precursor, are narrow sized, 100-200 nm. Only non-doped Gd2O3 from basic carbonate presents XRD data with smaller d(hkl) values than the literature ones. From Rietveld refinement, non-doped Gd2O3 from basic carbonate has the smallest crystallite size and from oxalate shows the greatest one. Also, the unit cell parameters indicate a plan contraction of the Gd2O3 from basic carbonate. The presence of Eu3+ increases crystallite size when basic carbonate precursor is used to prepare Gd2O3 and avoids plan contraction. The structural differences observed among Gd2O3 samples obtained are related to the type of precursor and to the presence or not of doping ion. (C) 2003 Elsevier B.V. (USA). All rights reserved.

Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric

GaN based high electron mobility transistors have draw great attention due to its potential in high temperature, high power and high frequency applications [1, 2]. However, significant gate leakage current is still one of the issues which need to be solved to improve the performance and reliability of the devices [3]. Several research groups have contributed to solve this problem by using metal–oxide–semiconductor HEMTs (MOSHEMTs), with a thin dielectric layer, such as SiO2 [4], Al2O3 [5], HfO2 [6] and Gd2O3 [7] between the gate and the barrier layer on AlGaN/GaN heterostructures. Gd2O3 has shown low interfacial density of states(Dit) with GaN and a high dielectric constant and low electrical leakage currents [8], thus is considered as a promising candidate for the gate dielectrics on GaN. MOS-HEMTs using Gd2O3 grown by electron-beam heating [7] or molecular beam epitaxy (MBE) [8] on GaN or AlGan/GaN structure have been investigated, but further research is still needed in Gd2O3 based AlGaN/GaN MOSHEMTs.

Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric

Thermal stability of AlGaN/GaN MOS-HEMTs and -diodes using Gd_(2)O_(3) are investigated by means of different thermal cycles and storage tests up to 500ºC for one week. IV DC and pulsed characteristics of the devices before and after the processes are evaluated and compared with conventional HEMTs. Results show that the devices with Gd_(2)O_(3) dielectric layer have lower leakage current and a more stable behavior during thermal treatment processes compared with conventional devices. In fact, an excellent on/off ratio of about 108 and a stable V_(t) is observed after storage at high temperature. The beneficial effects of Gd_(2)O_(3) on trapping effects of MOS-HEMTs are also dis-cussed.

Radiative Behaviour of Gd2O3:Er/Yb nanoparticles under near infrared illumination

Upconverting nanoparticles have attracted much attention in science recently, specifically in view of medical and biological applications such as live imaging of cell temperatures or cancer treatment. The previously studied system of gadolinium oxide nanorods co-doped with erbium and ytterbium and decorated with different number densities of gold nanoparticles has been studied. So far, these particles have been proven as efficient nanothermometers in a temperature range from 300 up to 2000 K. In this work, a more detailed study on the morphological and radiative behaviour of these particles has been conducted. It was found that the laser power threshold for the onset of the black body radiation decreases strongly with the increase in the gold concentration. The temperature of the onset itself seems to remain approximately constant. The heating efficiency was determined to increase significantly with the gold concentration. The morphological study revealed that the temperature at the black body radiation threshold was not enough to induce any significant transformation in neither the nanorods nor the gold nanoparticles, as was expected from comparison with literature. However, significant changes in radiative properties and the morphology were detected for powders that underwent strong laser heating until the emission of brightly visible black body radiation.

Infrared Spectroscopy of Gadolinium

Measurements of the optical reflectivity of the normal incident light along c-axis [0001] have been made on a Gadolinium single crystal, for temperatures between 50 K and room temperature just above the Curie temperature of Gd, which is 293 K. And covering the spectrum range between 100 -11000 cm-I . This work is the first study of Gd in the far infrared range. In fact it fills the gap below 0.2 eV which has never been measured before. Extreme attention was paid to the fact that Gadolinium is a very reactive metal with air. Thus, the sample was mechanically polished and carefully handled during the measurement. However, temperature dependent optical measurements have been made in the same frequency range for a sample of Gd2O3. For comparison, both samples of Gd and Gd2O3 were examined by X-Ray diffraction. XRD analysis showed that the sample was pure gadolinium and the oxide layer either does not exist, or is very thin. Furthermore, this fact was supported by the absence of any of Gd2O3 features in the Gd sample reflectivity. Kramers Kronig analysis was applied to extract the optical functions from the reflectance data. The optical conductivity shows a strong temperature dependence feature in the mid-infrared. This feature disappears completely at room temperature which supports a magnetic origin.

APTES-Modified RE2O3:Eu3+ Luminescent Beads: Structure and Properties

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Eu3+ as a spectroscopic probe in phosphors based on spherical fine particle gadolinium compounds

This work reports on the luminescence spectroscopy sensitivity in the determination of the phase purity in gadolinium compounds using Eu3+ as a probe. Cubic Gd2O3 and hexagonal Gd2O2S doped with Eu3+ spherical fine particles were obtained from doped gadolinium basic carbonates with morphological control and were also characterized by IR and XRD. Doped samples present Eu3+ characteristic transitions, with specific energy positions related to each phase. Emission and excitation spectra patterns were established for oxide and oxysulfide compounds, then oxysulfate and oxide impurities generated during oxysulfide preparation were monitored. From emission spectra some experimental intensity parameters were also calculated. All spectroscopic results reflect the presence or not of impurities in all compounds. (C) 2001 Elsevier B.V. Ltd. All rights reserved.

Time-resolved spectroscopy studies of Gd2SiO5 : Ce3+ from spherical particles

This paper reports on time-resolved emission and excitation spectra measurement studies of Gd2SiO5:Ce3+ in powder or pellet samples, from spherical particles, in order to assign the Ce3+ ion transitions into two different symmetry sites. Samples were obtained from solid-state reaction of the spherical particles oxides, SiO2 and Gd2O3:Ce3+. From time-resolved spectroscopy measurements Ce3+ ion transitions occupying the two different gadolinium crystallographic sites in Gd2SiO5 were separated and assigned. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Estudo de um sistema varistor à base de 'SN''O IND.2' dopado com terras-raras

Pós-graduação em Química - IQ

Hidroxicarbonato de gadolínio ativado com európio ou térbio trivalentes como precursor de óxidos, oxissulfetos e silicatos luminescentes

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)