Liquid metal/metal oxide frameworks with incorporated Ga2O3 for photocatalysis

Solvothermally synthesized Ga2O3 nanoparticles are incorporated into liquid metal/metal oxide (LM/MO) frameworks in order to form enhanced photocatalytic systems. The LM/MO frameworks, both with and without incorporated Ga2O3 nanoparticles, show photocatalytic activitydue to a plasmonic effect where performance is related to the loading of Ga2O3 nanoparticles. Optimum photocatalytic efficiency is obtained with 1 wt% incorporation of Ga2O3 nanoparticles. This can be attributed to the sub-bandgap states of LM/MO frameworks, contributing to pseudo-ohmic contacts which reduce the free carrier injection barrier to Ga2O3.

A One-Step Method for the Growth of Ga2O3-Nanorod-Based White-Light-Emitting Phosphors

A one-step synthesis of Ga2O3 nanorods by heating molten gallium in ambient air at high temperatures is presented. The high-temperature synthesis creates oxygen vacancies and incorporates nitrogen from the environment. The oxygen vacancy in Ga2O3 is responsible for the emission in the blue-green region, while nitrogen in Ga2O3 is responsible for red emission.

Search for new transparent conductors: Effect of Ge doping on the conductivity of Ga2O3, In2O3 and Ga1.4In0.6O3

Only a small amount (<= 3.5 mol%) of Ge can be doped in Ga2O3, Ga1.4In0.6O3 and In2O3 by means of solid state reactions at 1400 degrees C. All these samples are optically transparent in the visible range, but Ge-doped Ga2O3 and Ga1.4In0.6O3 are insulating. Only Ge-doped In2O3 exhibits a significant decrease in resistivity, the resistivity decreasing further on thermal quenching and H-2 reduction.The resistivity of 2.7% Ge-doped In2O3 after H-2 reduction shows a metallic behavior, and a resistivity of similar to 1 m Omega cm at room temperature, comparable to that of Sn-doped In2O3. (C) 2010 Elsevier Ltd. All rights reserved.

Thermodynamics and phase equilibria in the system Cu2O CuO ()Ga2O3

The standard Gibbs free energies of formation of CuAlO2 and CuAl2O4 were determined in the range 700° to 1100°C, using emf measurements on the galvanic cells (1) Pt,CuO +] Cu2O/CaO-ZrO2/O2,Pt; (2) Pt,Cu +] CuAlO2+] Al2O3/CaO-ZrO2/ Cu +] Cu2O,Pt; and (3) Pt,CuAl2O4+] CuAlO2+]Al2O3/CaO-ZrO2/O2,Pt. The results are compared with published information on the stability of these compounds. The entropy of transformation of CuO from tenorite to the rock-salt structure is evaluated from the present results and from earlier studies on the entropy of formation of spinels from oxides of the rock-salt and corundum structures. The temperatures corresponding to 3-phase equilibria in the system Cu2O-CuO-Al2O3 at specified O2 pressures calculated from the present results are discussed in reference to available phase diagrams.

Synthesis of one-dimensional N-doped Ga2O3 nanostructures: different morphologies and different mechanisms

N-doped monoclinic Ga2O3 nanostructures of different morphologies have been synthesized by heating Ga metal in ambient air at 1150 degrees C to 1350 degrees C for 1 to 5 h duration. Neither catalyst nor any gas flow has been used for the synthesis of N-doped Ga2O3 nanostructures. The morphology was controlled by monitoring the curvature of the Ga droplet. Plausible growth mechanisms are discussed to explain the different morphology of the nanostructures. Elemental mapping by electron energy loss spectroscopy of the nanostructures indicate uniform distribution of Ga, O and N. It is interesting to note that we have used neither nitride source nor any gas flow but the synthesis was carried out in ambient air. We believe that ambient nitrogen acts as the source of nitrogen. Unintentional nitrogen doping of the Ga2O3 nanostructures is a straightforward method and such nanostructures could be promising candidates for white light emission.

Synthesis, morphology, optical and photocatalytic performance of nanostructured beta-Ga2O3

Fine powders of beta-Ga2O3 nanostructures were prepared via low temperature reflux condensation method by varying the pH value without using any surfactant. The pH value of reaction mixture had great influence on the morphology of final products. High crystalline single phase beta-Ga2O3 nanostructures were obtained by thermal treatment at 900 degrees C which was confirmed by X-ray diffraction and Raman spectroscopy. The morphological analysis revealed rod like nanostructures at lower and higher pH values of 6 and 10, while spindle like structures were obtained at pH = 8. The phase purity and presence of vibrational bands were identified using Fourier transform infrared spectroscopy. The optical absorbance spectrum showed intense absorption features in the UV spectral region. A broad blue emission peak centered at 441 nm due to donor-acceptor gallium-oxygen vacancy pair recombination appeared. The photocatalytic activity toward Rhodamine B under visible light irradiation was higher for nanorods at pH 10.

Optical properties of transparent alkali gallium silicate glass-ceramics containing Ni2+-doped beta-Ga2O3 nanocrystals

Broadband near-infrared (IR) luminescence in transparent alkali gallium silicate glass-ceramics containing N2+-doped beta-Ga2O3 nanocrystals was observed. This broadband emission could be attributed to the T-3(2g) (F-3) -> (3)A(2g) (F-3) transition of octahedral Ni2+ ions in glass-ceramics. The full width at half-maximum (FWHM) of the near-IR luminescence and fluorescent lifetime of the glass-ceramic doped with 0.10 mol% NiO were 260 nm and similar to 1220 mu s, respectively. It is expected that transparent Ni2+-doped beta-Ga2O3 glass-ceramics with this broad near-IR emission and long fluorescent lifetime have potential applications as super-broadband optical amplification media.

Broadband infrared luminescence from transparent glass-ceramics containing Ni2+-doped beta-Ga2O3 nanocrystals

Transparent Ni2+-doped beta-Ga2O3 glass-ceramics were synthesized. The nanocrystal phase in the glass-ceramics was identified to be beta-Ga2O3 and its size was about 3.6 nm. It was confirmed from the absorption spectra that the ligand environment of Ni2+ ions changed from the trigonal bi-pyramid fivefold sites in the as-cast glass to the octahedral sites in the glass-ceramics. The broadband infrared emission centering at 1270 nm with full width at half maximum (FWHM) of more than 250 nm was observed. The fluorescence lifetime was about 1.1 mu s at room temperature. The observed infrared emission could be attributed to the T-3 (2g) (F-3) -> (3)A (2g) (F-3) transition of octahedral Ni2+ ions. It is suggested that the Ni2+-doped transparent beta-Ga2O3 glass-ceramics with broad bandwidth and long lifetime have a potential as a broadband amplification medium.

Intense infrared luminescence in transparent glass-ceramics containing beta-Ga2O3 : Ni2+ nanocrystals

Transparent glass-ceramics containing beta-Ga2O3:Ni2+ nanocrystals were synthesized and characterized by X-ray diffraction, transmission electron microscopy, and electron energy loss spectroscopy. Intense broad-band luminescence centering at 1200 nm was observed when the sample was excited by a diode laser at 980 nm. The room-temperature fluorescent lifetime was 665 mu s, which is longer than the Ni2+-doped ZnAl2O4 and LiGa5O8 glass-ceramics and is also comparable to the Ni2+-doped LiGa5O8 single crystal. The intense infrared luminescence with long fluorescent lifetime may be ascribed to the high crystal field hold by Ni2+ and the moderate lattice phonon energy of beta-Ga2O3. The excellent optical properties of this novel material indicate that it might be a promising candidate for broad-band amplifiers and room-temperature tunable lasers.

Broadband optical amplification in silicate glass-ceramic containing beta-Ga2O3 : Ni2+ nanocrystals

We demonstrate broadband optical amplification at 1.3 mu m in silicate glass-ceramics containing beta-Ga2O3:Ni2+ nanocrystals with 980 nm excitation for the first time. The optical gain efficiency is calculated to be about 0.283 cm(-1) when the excitation power is 1.12 W. The optical gain shows similar wavelength dependence to luminescence properties. (C) 2007 Optical Society of America.

Growth and properties of ZnO thin film on beta-Ga2O3(100) substrate by pulsed laser deposition

Zinc oxide (ZnO) thin films were grown on the beta-Ga2O3 (100) substrate by pulsed laser deposition (PLD). X-ray diffraction (XRD) indicated that the ZnO films are c-axis oriented. The optical and electrical properties of the films were investigated. The room temperature Photoluminescence (PL) spectrum showed a near band emission at 3.28 eV with two deep level emissions. Optical absorption indicated a visible exciton absorption at room temperature. The as-grown films had good electrical properties with the resistivities as low as 0.02 Omega cm at room temperature. Thus, beta-Ga2O3 (100) substrate is shown to be a suitable substrate for fabricating ZnO film. (c) 2006 Elsevier B.V. All rights reserved.

Growth and spectral characterization of beta-Ga2O3 single crystals

Beta gallium oxide (beta-Ga2O3) single crystals were grown by the floating zone technique. The absorption spectra and the luminescence of the crystals were measured. The absorption spectra showed an intrinsic short cutoff edge around 260 nm with two shoulders at 270 and 300 nm. Not only the characteristic UV (395 nm), blue (471 nm) and green (559 nm) lights, but also the red (692 nm) light can be seen in the emission spectra. The deep UV light was attributed to the existing of quantum wells above the valence band and the red light was owed to the electron-hole recombination via the vicinity donors and acceptors. (c) 2006 Elsevier Ltd. All rights reserved.