Ablation of hydrogen isotopic spherical pellet due to the impact of energetic ions of the respective isotopes

The ablation rate of a hydrogen isotopic spherical pellet G(is) due to the impact of energetic ions of the respective isotopes and its scaling law are obtained using the transsonic neutral-shielding model, where subscript s might refer to either hydrogen or deuterium. Numerical results show that if E0s/E0e2 greater-than-or-equal-to 1.5, G(is)/G(es) greater-than-or-equal-to 20%, where E0s and E0e are the energy of undisturbed ion and electron, respectively, and G(es) is the ablation rate of a pellet due to the impact of electrons. Hence, under the NBI heating, the effect of the impact of energetic ions on the pellet ablation should be taken into consideration. This result also gives an explanation of the observed enhancement of pellet ablation during NBIH.

Nonlinear laser focusing using a conical guide and generation of energetic ions

Using conventional methods, a laser pulse can be focused down to around 6-8 mu m, but further reduction of the spot size has proven to be difficult. Here it is shown by particle-in-cell simulation that with a hollow cone an intense laser pulse can be reduced to a tiny, highly localized, spot of around 1 mu m radius, accompanied by much enhanced light intensity. The pulse shaping and focusing effect is due to a nonlinear laser-plasma interaction on the inner surface of the cone. When a thin foil is attached to the tip of the cone, the cone-focused light pulse compresses and accelerates the ions in its path and can punch through the thin target, creating highly localized energetic ion bunches of high density.

Dissociative charge exchange and ionization of O-2 by fast H+ and O+ ions: Energetic ion interactions in Europa's oxygen atmosphere and neutral torus

Measurements of electron capture and ionization of O-2 molecules in collisions with H+ and O+ ions have been made over an energy range 10 - 100 keV. Cross sections for dissociative and nondissociative interactions have been separately determined using coincidence techniques. Nondissociative channels leading to O-2(+) product formation are shown to be dominant for both the H+ and the O+ projectiles in the capture collisions and only for the H+ projectiles in the ionization collisions. Dissociative channels are dominant for ionizing collisions involving O+ projectiles. The energy distributions of the O+ fragment products from collisions involving H+ and O+ have also been measured for the first time using time-of-flight methods, and the results are compared with those from other related studies. These measurements have been used to describe the interaction of the energetic ions trapped in Jupiter's magnetosphere with the very thin oxygen atmosphere of the icy satellite Europa. It is shown that the ionization of oxygen molecules is dominated by charge exchange plus ion impact ionization processes rather than photoionization. In addition, dissociation is predominately induced through excitation of electrons into high-lying repulsive energy states ( electronically) rather than arising from momentum transfer from knock-on collisions between colliding nuclei, which are the only processes included in current models. Future modeling will need to include both these processes.

Préparation d'échantillons pour l'étude par GISAXS des mécanismes de déformation des matériaux par faisceaux d'ions lourds de haute énergie.

Le mécanisme menant à des déformations structurales suivant le bombardement d'échantillons de a-Si d'un faisceau d'ions lourds et rapides est sujet de controverses. Nous nous sommes penchés sur l'hypothèse de la formation d'une zone liquide causée par la déposition d'énergie des ions incidents dans le contexte de la théorie du pic thermique. Des échantillons de silicium amorphe furent préparés dans le but d'observer les indices d'une transition de phase l-Si/a-Si suivant la déposition locale d'énergie sur le parcours d'un ion lourd énergétique dans le a-Si. Les échantillons furent implantés d'impuretés de Cu ou d'Ag avant d'être exposés à un faisceau d'ions Ag12+ de 70 MeV. L'utilisation de l'analyse GISAXS est projetée afin d'observer une concentration locale d'impuretés suivant leur ségrégation sur la trace de l'ion. Des masques d'implantation nanométriques d'oxide d'aluminium ont été fabriqués afin d'augmenter la sensibilité de l'analyse GISAXS et une méthode d'alignement de ces masques selon la direction du faisceau fut développée. Le bombardement d'échantillons au travers de ces masques a donné lieu à un réseau de sites d'impacts isolés presque équidistants.

The free escape continuum of diffuse ions upstream of the Earth's quasi-parallel bow shock

The Earth's bow shock is very efficient in accelerating ions out of the incident solar wind distribution to high energies (≈ 200 keV/e). Fluxes of energetic ions accelerated at the quasi-parallel bow shock, also known as diffuse ions, are best represented by exponential spectra in energy/charge, which require additional assumptions to be incorporated into these model spectra. One of these assumptions is a so-called "free escape boundary" along the interplanetary magnetic field into the upstream direction. Locations along the IBEX orbit are ideally suited for in situ measurements to investigate the existence of an upstream free escape boundary for bow shock accelerated ions. In this study we use 2 years of ion measurements from the background monitor on the IBEX spacecraft, supported by ACE solar wind observations. The IBEX Background Monitor is sensitive to protons > 14 keV, which includes the energy of the maximum flux for diffuse ions. With increasing distance from the bow shock along the interplanetary magnetic field, the count rates for diffuse ions stay constant for ions streaming away from the bow shock, while count rates for diffuse ions streaming toward the shock gradually decrease from a maximum value to ~1/e at distances of about 10 RE to 14 RE. These observations of a gradual decrease support the transition to a free escape continuum for ions of energy >14 keV at distances from 10 RE to 14 RE from the bow shock.

Irradiation-mediated tailoring of carbon nanotubes

The ever-increasing demand for faster computers in various areas, ranging from entertaining electronics to computational science, is pushing the semiconductor industry towards its limits on decreasing the sizes of electronic devices based on conventional materials. According to the famous law by Gordon E. Moore, a co-founder of the world s largest semiconductor company Intel, the transistor sizes should decrease to the atomic level during the next few decades to maintain the present rate of increase in the computational power. As leakage currents become a problem for traditional silicon-based devices already at sizes in the nanometer scale, an approach other than further miniaturization is needed to accomplish the needs of the future electronics. A relatively recently proposed possibility for further progress in electronics is to replace silicon with carbon, another element from the same group in the periodic table. Carbon is an especially interesting material for nanometer-sized devices because it forms naturally different nanostructures. Furthermore, some of these structures have unique properties. The most widely suggested allotrope of carbon to be used for electronics is a tubular molecule having an atomic structure resembling that of graphite. These carbon nanotubes are popular both among scientists and in industry because of a wide list of exciting properties. For example, carbon nanotubes are electronically unique and have uncommonly high strength versus mass ratio, which have resulted in a multitude of proposed applications in several fields. In fact, due to some remaining difficulties regarding large-scale production of nanotube-based electronic devices, fields other than electronics have been faster to develop profitable nanotube applications. In this thesis, the possibility of using low-energy ion irradiation to ease the route towards nanotube applications is studied through atomistic simulations on different levels of theory. Specifically, molecular dynamic simulations with analytical interaction models are used to follow the irradiation process of nanotubes to introduce different impurity atoms into these structures, in order to gain control on their electronic character. Ion irradiation is shown to be a very efficient method to replace carbon atoms with boron or nitrogen impurities in single-walled nanotubes. Furthermore, potassium irradiation of multi-walled and fullerene-filled nanotubes is demonstrated to result in small potassium clusters in the hollow parts of these structures. Molecular dynamic simulations are further used to give an example on using irradiation to improve contacts between a nanotube and a silicon substrate. Methods based on the density-functional theory are used to gain insight on the defect structures inevitably created during the irradiation. Finally, a new simulation code utilizing the kinetic Monte Carlo method is introduced to follow the time evolution of irradiation-induced defects on carbon nanotubes on macroscopic time scales. Overall, the molecular dynamic simulations presented in this thesis show that ion irradiation is a promisingmethod for tailoring the nanotube properties in a controlled manner. The calculations made with density-functional-theory based methods indicate that it is energetically favorable for even relatively large defects to transform to keep the atomic configuration as close to the pristine nanotube as possible. The kinetic Monte Carlo studies reveal that elevated temperatures during the processing enhance the self-healing of nanotubes significantly, ensuring low defect concentrations after the treatment with energetic ions. Thereby, nanotubes can retain their desired properties also after the irradiation. Throughout the thesis, atomistic simulations combining different levels of theory are demonstrated to be an important tool for determining the optimal conditions for irradiation experiments, because the atomic-scale processes at short time scales are extremely difficult to study by any other means.

Irradiation effects in graphene and related materials

Nanomaterials with a hexagonally ordered atomic structure, e.g., graphene, carbon and boron nitride nanotubes, and white graphene (a monolayer of hexagonal boron nitride) possess many impressive properties. For example, the mechanical stiffness and strength of these materials are unprecedented. Also, the extraordinary electronic properties of graphene and carbon nanotubes suggest that these materials may serve as building blocks of next generation electronics. However, the properties of pristine materials are not always what is needed in applications, but careful manipulation of their atomic structure, e.g., via particle irradiation can be used to tailor the properties. On the other hand, inadvertently introduced defects can deteriorate the useful properties of these materials in radiation hostile environments, such as outer space. In this thesis, defect production via energetic particle bombardment in the aforementioned materials is investigated. The effects of ion irradiation on multi-walled carbon and boron nitride nanotubes are studied experimentally by first conducting controlled irradiation treatments of the samples using an ion accelerator and subsequently characterizing the induced changes by transmission electron microscopy and Raman spectroscopy. The usefulness of the characterization methods is critically evaluated and a damage grading scale is proposed, based on transmission electron microscopy images. Theoretical predictions are made on defect production in graphene and white graphene under particle bombardment. A stochastic model based on first-principles molecular dynamics simulations is used together with electron irradiation experiments for understanding the formation of peculiar triangular defect structures in white graphene. An extensive set of classical molecular dynamics simulations is conducted, in order to study defect production under ion irradiation in graphene and white graphene. In the experimental studies the response of carbon and boron nitride multi-walled nanotubes to irradiation with a wide range of ion types, energies and fluences is explored. The stabilities of these structures under ion irradiation are investigated, as well as the issue of how the mechanism of energy transfer affects the irradiation-induced damage. An irradiation fluence of 5.5x10^15 ions/cm^2 with 40 keV Ar+ ions is established to be sufficient to amorphize a multi-walled nanotube. In the case of 350 keV He+ ion irradiation, where most of the energy transfer happens through inelastic collisions between the ion and the target electrons, an irradiation fluence of 1.4x10^17 ions/cm^2 heavily damages carbon nanotubes, whereas a larger irradiation fluence of 1.2x10^18 ions/cm^2 leaves a boron nitride nanotube in much better condition, indicating that carbon nanotubes might be more susceptible to damage via electronic excitations than their boron nitride counterparts. An elevated temperature was discovered to considerably reduce the accumulated damage created by energetic ions in both carbon and boron nitride nanotubes, attributed to enhanced defect mobility and efficient recombination at high temperatures. Additionally, cobalt nanorods encapsulated inside multi-walled carbon nanotubes were observed to transform into spherical nanoparticles after ion irradiation at an elevated temperature, which can be explained by the inverse Ostwald ripening effect. The simulation studies on ion irradiation of the hexagonal monolayers yielded quantitative estimates on types and abundances of defects produced within a large range of irradiation parameters. He, Ne, Ar, Kr, Xe, and Ga ions were considered in the simulations with kinetic energies ranging from 35 eV to 10 MeV, and the role of the angle of incidence of the ions was studied in detail. A stochastic model was developed for utilizing the large amount of data produced by the molecular dynamics simulations. It was discovered that a high degree of selectivity over the types and abundances of defects can be achieved by carefully selecting the irradiation parameters, which can be of great use when precise pattering of graphene or white graphene using focused ion beams is planned.

Gray track formation in KTiOPO4 by swift ion irradiation

Potassium titanyl phosphate single crystals were irradiated with 48 MeV lithium ions at fluences varying from 5×1012 to 1016 ions/cm2. The defects created in the crystal have been characterized using x-ray rocking curve measurements, optical transmittance, and photoluminescence spectroscopy. From x-ray rocking curve studies, the full width at half maximum for the irradiated samples was observed to increase, indicating lattice strain caused by the energetic ions. Optical transparency of these samples was found to decrease upon irradiation. The irradiated samples exhibited a broadband luminescence in the 700–900 nm region, for fluences above 5×1013 ions/cm2. The results indicate that ion-beam-induced optical effects in KTiOPO4 single crystals are very similar to the ones obtained for crystals with “gray tracks,” which are attributed to the electronic transitions in the Ti3+ levels.

Interactions of a femtosecond intense laser with rare gas clusters in a dense jet\

A study on the interactions of high intensity (similar to 10(16) W/cm(2)) femtosecond laser pulses with rare gas clusters in a dense jet is performed. Energy absorption by Ar and Xe clusters is measured and it can be as high as 90%. Very energetic ions produced in the laser interaction with a dense cluster jet are detected by time-of-flight spectrometry and the maximum ion energy of Xe is up to 1.3 MeV. The average ion energies are found to increase with increasing cluster size and get saturated gradually. The average ion energies also show a strong directionality and the average ion energy in the direction parallel to the laser polarization vector is 40% higher than that perpendicular to it. The findings are discussed in terms of a model of charge-dependent ion acceleration.

Intense local plasma heating by stopping of ultrashort ultraintense laser pulse in dense plasma

Self-trapping, stopping, and absorption of an ultrashort ultraintense linearly polarized laser pulse in a finite plasma slab of near-critical density is investigated by particle-in-cell simulation. As in the underdense plasma, an electron cavity is created by the pressure of the transmitted part of the light pulse and it traps the latter. Since the background plasma is at near-critical density, no wake plasma oscillation is created. The propagating self-trapped light rapidly comes to a stop inside the slab. Subsequent ion Coulomb explosion of the stopped cavity leads to explosive expulsion of its ions and formation of an extended channel having extremely low plasma density. The energetic Coulomb-exploded ions form shock layers of high density and temperature at the channel boundary. In contrast to a propagating pulse in a lower density plasma, here the energy of the trapped light is deposited onto a stationary and highly localized region of the plasma. This highly localized energy-deposition process can be relevant to the fast ignition scheme of inertial fusion.

ECR plasma in growth of cubic GaN by low pressure MOCVD

To heteroepitaxally grow the crystalline cubic-GaN (c-GaN) film on the substrates with large lattice mismatch is basically important for fabricating the blue or ultraviolet laser diodes based on cubic group III nitride materials. We have obtained the crystalline c-GaN film and the heteroepitaxial interface between c-Gan and GaAs (001) substrate by the ECR Plasma-Assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) under low-pressure and low-temperature (similar to600degreesC) on a homemade ECR-plasma Semiconductor Processing Device (ESPD). In order to decrease the growth temperature, the ECR plasma source was adopted as the activated nitrogen source, therefore the working pressure of MOCVD was decreased down to the region less than 1 Pa. To eliminate the damages from energetic ions of current plasma source, a Multi-cusp cavity,coupling ECR Plasma source (MEP) was selected to use in our experiment. To decrease the strain and dislocations induced from the large lattice mismatch between c-GaN and GaAs substrate, the plasma pretreatment procedure i.e., the initial growth technique was investigated The experiment arrangements, the characteristics of plasma and the growth procedure, the characteristics on-GaN film and interface between c-GaN and GaAs(001), and the roles of ECR plasma are described in this contribution.

Scaling of proton acceleration driven by petawatt-laser-plasma interactions

The possibility of using high-power lasers to generate high-quality beams of energetic ions is attracting large global interest. The prospect of using laser-accelerated protons in medicine attracts particular interest, as these schemes may lead to compact and relatively low-cost sources. Among the challenges remaining before these sources can be used in medicine is to increase the numbers and energies of the ions accelerated. Here, we extend the energy and intensity range over which proton scaling is experimentally investigated, up to 400 J and 6 x 10(20) W cm(-2) respectively, and find a slower proton scaling than previously predicted. With the aid of plasma-expansion simulation tools, our results suggest the importance of time-dependent and multidimensional effects in predicting the maximum proton energy in this ultrahigh-intensity regime. The implications of our new understanding of proton scaling for potential medical applications are discussed.

Ultrahigh-intensity laser-produced plasmas as a compact heavy ion injection source

The possibility of using high-intensity laser-produced plasmas as a source of energetic ions for heavy ion accelerators is addressed. Experiments have shown that neon ions greater than 6 MeV can be produced from gas jet plasmas, and well-collimated proton beams greater than 20 MeV have been produced from high-intensity Laser solid interactions. The proton beams from the back of thin targets appear to be more collimated and reproducible than are high-energy ions generated in the ablated plasma at the front of the target and may be more suitable for ion injection applications. Lead ions have been produced at energies up to 430 MeV.

Identifying the Open-Closed Field Line Boundary

Of all the various definitions of the polar cap boundary that have been used in the past, the most physically meaningful and significant is the boundary between open and closed field lines. Locating this boundary is very important as it defines which regions and phenomena are on open field lines and which are on closed. This usually has fundamental implications for the mechanisms invoked. Unfortunately, the open-closed boundary is usually very difficult to identify, particularly where it maps to an active reconnection site. This paper looks at the topological reconnection classes that can take place, both at the magnetopause and in the cross-tail current sheet and discusses the implications for identifying the open-closed boundary when reconnection is giving velocity filter dispersion of signatures. On the dayside, it is shown that the dayside boundary plasma sheet and low-latitude boundary layer precipitations are well explained as being on open field lines, energetic ions being present because of reflection of central plasma sheet ions off the two Alfvén waves launched by the reconnection site (the outer one of which is the magnetopause). This also explains otherwise anomalous features of the dayside convection pattern in the cusp region. On the nightside, similar considerations place the open-closed boundary somewhat poleward of the velocity-dispersed ion structures which are a signature of the plasma sheet boundary layer ion flows in the tail.

Ion beam assisted deposition of an organic light emitting diode electrode

This work presents the electro-optical characterization of metal-organic interfaces prepared by the Ion Beam Assisted Deposition (IBAD) method. IBAD applied in this work combines simultaneously metallic film deposition and bombardment with an independently controlled ion beam, allowing different penetration of the ions and the evaporated metallic elements into the polymer. The result is a hybrid, non-abrupt interface, where polymer, metal and ion coexists. We used an organic light emitting diode, which has a typical vertical-architecture, for the interface characterization: Glass/Indium Tin Oxide (ITO)/Poly[ethylene-dioxythiophene/poly{styrenesulfonicacid}]) (PEDOT:PSS) /Emitting Polymer/Metal. The emitting polymer layer comprised of the Poly[(9,9-dioctyl-2,7-divinylenefluorenylene)-alt-co-{2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene}] (PFO) and the metal layer of aluminum prepared with different Ar(+) ion energies varying in the range from 0 to 1000 eV. Photoluminescence, Current-Voltage and Electroluminescence measurements were used to study the emission and electron injection properties. Changes of these properties were related with the damage caused by the energetic ions and the metal penetration into the polymer. Computer simulations of hybrid interface damage and metal penetration were confronted with experimental data. (C) 2010 Elsevier B.V. All rights reserved.