A Breakdown Criterion of Free Molecular Flows and an Optimum Analysis of EBPVD

Two important issues in electron beam physical vapor deposition (EBPVD) are addressed. The first issue is a validity condition of the classical cosine law widely used in the engineering context. This requires a breakdown criterion of the free molecular assumption on which the cosine law is established. Using the analytical solution of free molecular effusion flow, the number of collisions (N-c) for a particle moving from an evaporative source to a substrate is estimated that is proven inversely proportional to the local Knudsen number at the evaporation surface. N-c = 1 is adopted as a breakdown criterion of the free molecular assumption, and it is verified by experimental data and DSMC results. The second issue is how to realize the uniform distributions of thickness and component over a large-area thin film. Our analysis shows that at relatively low evaporation rates the goal is easy achieved through arranging the evaporative source positions properly and rotating the substrate.

Thickness And Component Distributions Of Yttrium-Titanium Alloy Films In Electron-Beam Physical Vapor Deposition

Thickness and component distributions of large-area thin films are an issue of international concern in the field of material processing. The present work employs experiments and direct simulation Monte Carlo (DSMC) method to investigate three-dimensional low-density, non-equilibrium jets of yttrium and titanium vapor atoms in an electron-beams physical vapor deposition (EBPVD) system furnished with two or three electron-beams, and obtains their deposition thickness and component distributions onto 4-inch and 6-inch mono-crystal silicon wafers. The DSMC results are found in excellent agreement with our measurements, such as evaporation rates of yttrium and titanium measured in-situ by quartz crystal resonators, deposited film thickness distribution measured by Rutherford backscattering spectrometer (RBS) and surface profilometer and deposited film molar ratio distribution measured by RBS and inductively coupled plasma atomic emission spectrometer (ICP-AES). This can be taken as an indication that a combination of DSMC method with elaborate measurements may be satisfactory for predicting and designing accurately the transport process of EBPVD at the atomic level.

电子束物理气相沉积钇钛合金薄膜的组分和厚度分布

大面积薄膜的组分和厚度分布是实际工艺中最为关心的问题之一.利用实验和直接模拟Monte Carlo(DSMC)方法,分别研究了双电子束和三电子束物理气相沉积(EBPVD)中,钇和钛蒸气原子的三维低密度、非平衡射流,获得了它们在100和150mm单晶硅基片表面的沉积厚度和组分的分布.DSMC结果与钇和钛的蒸发速率的石英晶振探头原位测量值,沉积薄膜厚度分布的台阶仪和Rutherford背散射仪的测量数据,沉积薄膜组分分布的Rutherford背散射仪和电感耦合等离子体原子发射光谱仪测量值,均相符甚好.这表明通过DSMC方法与精细测量相结合,可在原子水平上实现EBPVD输运工艺的定量预测和设计。

CoO doping effects on the ZnO films through EBPDV technique

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)