Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications

We report on the properties of BaBi2Ta2O9 (BBT) thin films for dynamic random-access memory (DRAM) and integrated capacitor applications. Crystalline BBT thin films were successfully fabricated by the chemical solution deposition technique on Pt-coated Si substrates at a low annealing temperature of 650°C. The films were characterized in terms of structural, dielectric, and insulating properties. The electrical measurements were conducted on Pt/BBT/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor, at 100 kHz, were 282 and 0.023, respectively, for films annealed at 700°C for 60 min. The leakage current density of the films was lower than 10-9 A/cm2 at an applied electric field of 300 kV/cm. A large storage density of 38.4 fC/μm2 was obtained at an applied electric field of 200 kV/cm. The high dielectric constant, low dielectric loss and low leakage current density suggest the suitability of BBT thin films as dielectric layer for DRAM and integrated capacitor applications.

Microscopic and dielectric analyses of vanadium and tungsten modified barium zirconium titanate ceramics

Dielectric spectroscopy was used in this study to examine polycrystalline vanadium and tungstendoped BaZr 0.1Ti 0.90O 3 (BZT10:2V and BZT10:2W) ceramics obtained by the mixed oxide method. According to X-ray diffraction analyses, addition of vanadium and tungsten lead to ceramics free of secondary phases. SEM analyses reveal that both dopants result in slower oxygen ion motion and consequently lower grain growth rate. Temperature dependence dielectric study showed normal ferroelectric to paraelectric transition well above the room temperature for the BZT10 and BZT10:2V ceramics. However, BZT10:2W ceramic showed a relaxor-like behavior near phase transition characterized by the empirical parameter γ. Piezoelectric force microscopy images reveals that the piezoelectric coefficient is strongly influenced by type of donor dopant suggesting promising applications for dynamic random access memories and data-storage media. Copyright © 2010 American Scientific Publishers All rights reserved.

Dependence of Generation-Recombination Noise With Gate Voltage in FD SOI MOSFETs

A model for computing the generation-recombination noise due to traps within the semiconductor film of fully depleted silicon-on-insulator MOSFET transistors is presented. Dependence of the corner frequency of the Lorentzian spectra on the gate voltage is addressed in this paper, which is different to the constant behavior expected for bulk transistors. The shift in the corner frequency makes the characterization process easier. It helps to identify the energy position, capture cross sections, and densities of the traps. This characterization task is carried out considering noise measurements of two different candidate structures for single-transistor dynamic random access memory devices.

A dynamic magnetic core memory /

"January 7, 1954"

A Random Access Protocol incorporating Multi-Packet Reception, Retransmission Diversity and Successive Interference Cancellation

8th International Workshop on Multiple Access Communications (MACOM2015), Helsinki, Finland.

A random access MAC protocol for MPR satellite networks

Dissertação apresentada para obtenção do Grau de Mestre em Engenharia Electrotécnica e de Computadores, pela Universidade Nova de Lisboa, Faculdade de Ciências e Tecnologia

Efficient bulk-loading on dynamic metric access methods

This paper presents a new technique and two algorithms to bulk-load data into multi-way dynamic metric access methods, based on the covering radius of representative elements employed to organize data in hierarchical data structures. The proposed algorithms are sample-based, and they always build a valid and height-balanced tree. We compare the proposed algorithm with existing ones, showing the behavior to bulk-load data into the Slim-tree metric access method. After having identified the worst case of our first algorithm, we describe adequate counteractions in an elegant way creating the second algorithm. Experiments performed to evaluate their performance show that our bulk-loading methods build trees faster than the sequential insertion method regarding construction time, and that it also significantly improves search performance. (C) 2009 Elsevier B.V. All rights reserved.

Magnetization dynamics in spin valves

Key technology applications like magnetoresistive sensors or the Magnetic Random Access Memory (MRAM) require reproducible magnetic switching mechanisms. i.e. predefined remanent states. At the same time advanced magnetic recording schemes push the magnetic switching time into the gyromagnetic regime. According to the Landau-Lifschitz-Gilbert formalism, relevant questions herein are associated with magnetic excitations (eigenmodes) and damping processes in confined magnetic thin film structures.rnObjects of study in this thesis are antiparallel pinned synthetic spin valves as they are extensively used as read heads in today’s magnetic storage devices. In such devices a ferromagnetic layer of high coercivity is stabilized via an exchange bias field by an antiferromagnet. A second hard magnetic layer, separated by a non-magnetic spacer of defined thickness, aligns antiparallel to the first. The orientation of the magnetization vector in the third ferromagnetic NiFe layer of low coercivity - the freelayer - is then sensed by the Giant MagnetoResistance (GMR) effect. This thesis reports results of element specific Time Resolved Photo-Emission Electron Microscopy (TR-PEEM) to image the magnetization dynamics of the free layer alone via X-ray Circular Dichroism (XMCD) at the Ni-L3 X-ray absorption edge.rnThe ferromagnetic systems, i.e. micron-sized spin valve stacks of typically deltaR/R = 15% and Permalloy single layers, were deposited onto the pulse leading centre stripe of coplanar wave guides, built in thin film wafer technology. The ferromagnetic platelets have been applied with varying geometry (rectangles, ellipses and squares), lateral dimension (in the range of several micrometers) and orientation to the magnetic field pulse to study the magnetization behaviour in dependence of these magnitudes. The observation of magnetic switching processes in the gigahertz range became only possible due to the joined effort of producing ultra-short X-ray pulses at the synchrotron source BESSY II (operated in the so-called low-alpha mode) and optimizing the wave guide design of the samples for high frequency electromagnetic excitation (FWHM typically several 100 ps). Space and time resolution of the experiment could be reduced to d = 100 nm and deltat = 15 ps, respectively.rnIn conclusion, it could be shown that the magnetization dynamics of the free layer of a synthetic GMR spin valve stack deviates significantly from a simple phase coherent rotation. In fact, the dynamic response of the free layer is a superposition of an averaged critically damped precessional motion and localized higher order spin wave modes. In a square platelet a standing spin wave with a period of 600 ps (1.7 GHz) was observed. At a first glance, the damping coefficient was found to be independent of the shape of the spin-valve element, thus favouring the model of homogeneous rotation and damping. Only by building the difference in the magnetic rotation between the central region and the outer rim of the platelet, the spin wave becomes visible. As they provide an additional efficient channel for energy dissipation, spin waves contribute to a higher effective damping coefficient (alpha = 0.01). Damping and magnetic switching behaviour in spin valves thus depend on the geometry of the element. Micromagnetic simulations reproduce the observed higher-order spin wave mode.rnBesides the short-run behaviour of the magnetization of spin valves Permalloy single layers with thicknesses ranging from 3 to 40 nm have been studied. The phase velocity of a spin wave in a 3 nm thick ellipse could be determined to 8.100 m/s. In a rectangular structure exhibiting a Landau-Lifschitz like domain pattern, the speed of the field pulse induced displacement of a 90°-Néel wall has been determined to 15.000 m/s.rn

Dynamic spectrum access in heterogeneous unlicensed wireless networks

Existing wireless systems are normally regulated by a fixed spectrum assignment strategy. This policy leads to an undesirable situation that some systems may only use the allocated spectrum to a limited extent while others have very serious spectrum insufficiency situation. Dynamic Spectrum Access (DSA) is emerging as a promising technology to address this issue such that the unused licensed spectrum can be opportunistically accessed by the unlicensed users. To enable DSA, the unlicensed user shall have the capability of detecting the unoccupied spectrum, controlling its spectrum access in an adaptive manner, and coexisting with other unlicensed users automatically. In this article, we propose a radio system Transmission Opportunity-based spectrum access control protocol with the aim to improve spectrum access fairness and ensure safe coexistence of multiple heterogeneous unlicensed radio systems. In the scheme, multiple radio systems will coexist and dynamically use available free spectrum without interfering with licensed users. Simulation is carried out to evaluate the performance of the proposed scheme with respect to spectrum utilisation, fairness and scalability. Comparing with the existed studies, our strategy is able to achieve higher scalability and controllability without degrading spectrum utilisation and fairness performance.

Random Access over Multi-Packet Reception Channels: A Mean-Field Approach

Thesis (Ph.D.)--University of Washington, 2016-06

A novel approach to Non-Orthogonal Random Access with application to NB-IoT NTN systems

In the Massive IoT vision, millions of devices need to be connected to the Internet through a wireless access technology. However, current IoT-focused standards are not fully prepared for this future. In this thesis, a novel approach to Non-Orthogonal techniques for Random Access, which is the main bottleneck in high density systems, is proposed. First, the most popular wireless access standards are presented, with a focus on Narrowband-IoT. Then, the Random Access procedure as implemented in NB-IoT is analyzed. The Non-Orthogonal Random Access technique is presented next, along with two potential algorithms for the detection of non-orthogonal preambles. Finally, the performance of the proposed solutions are obtained through numerical simulations.

Detection e Classificazione di Jammer in Protocolli Random Access

Con il crescente utilizzo delle reti wireless la sicurezza e l'affidabilità del servizio stanno diventando requisiti fondamentali da garantire. Questo studio ha come obiettivi il rilevamento di un attacco jammer e la classificazione della tipologia dell'attacco (reattivo, random e periodico) in una rete wireless in cui gli utenti comunicano con un access point tramite il protocollo random access slotted Aloha. La classificazione degli attacchi è infatti fondamentale per attuare le dovute contromisure ed evitare cali di performance nella rete. Le metriche estratte, fra cui la packet delivery ratio (PDR) e la rispettiva analisi spettrale, il rapporto segnale rumore medio e la varianza dell'rapporto segnale rumore, sono risultate essere efficaci nella classificazione dei jammers. In questo elaborato è stato implementato un sistema di detection e classificazione di jammer basato su machine learning, che ha permesso di ottenere una accuratezza complessiva del 92.5% nella classificazione ed una probabilità di detection superiore al 95% per valori di PDR inferiori o uguali al 70%.