1000 resultados para DEPOSIÇÃO QUÍMICA DE VAPOR


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Alumina supported niobium oxide was prepared by chemical vapor deposition (CVD) of NbCl5. The alumina was calcined and pretreated at differents temperatures in order to vary the density of OH groups on the surface which was determined by thermogravimetric analysis. A good correlation was found between the amount of anchored niobium and the total number of anionic sites (oxide and hydroxyl groups) on the surface of the alumina. The infrared spectra on the OH stretching region indicate that OH groups coordinated to at least one tetrahedral aluminum were more reactive towards NbCl5.

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The historical development of atomic spectrometry techniques based on chemical vapor generation by both batch and flow injection sampling formats is presented. Detection via atomic absorption spectrometry (AAS), microwave induced plasma optical emission spectrometry (MIP-OES), inductively coupled plasma optical emission spectrometry (ICP-OES) , inductively coupled plasma mass spectrometry (ICP-MS) and furnace atomic nonthermal excitation spectrometry (FANES) are considered. Hydride generation is separately considered in contrast to other methods of generation of volatile derivatives. Hg ¾ CVAAS (cold vapor atomic absorption spectrometry) is not considered here. The current state-of-the-art, including extension, advantages and limitations of this approach is discussed.

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A técnica de revestimento duplex combina dois processos: o tratamento de nitretação a plasma da superfície e a deposição de uma camada via PVD. O processo de nitretação a plasma sob condições controladas pode produzir a chamada “fase S” sem a presença de nitretos de cromo, o que confere ao aço tratado maior dureza e melhor resistência à corrosão. Os revestimentos de nitreto de titânio melhoram a dureza superficial do material, porém defeitos e poros podem expor o substrato ao meio. Este trabalho consiste no estudo da resistência à corrosão do aço inoxidável austenítico AISI 316L revestido com camada duplex em meio contendo cloretos. As camadas nitretadas a plasma foram obtidas pelo processo de nitretação iônica e os revestimentos Ti/TiN foram obtidos pelo processo de deposição física de vapor assistida por plasma (PAPVD). Os corpos de prova foram inicialmente avaliados por microscopia eletrônica de varredura (MEV) e a composição das fases foi identificada por difração de raios-x (DRX). A dureza foi avaliada por nanoidentação e a rugosidade superficial também foi medida. Os testes de resistência à corrosão foram feitos por voltametria cíclica (VC) e os ensaios de corrosão acelerada em câmara de névoa salina. A amostra nitretada a 400°C por 4 horas e mistura gasosa de 5%N2- 95%H2 apresentou o melhor desempenho de resistência à corrosão em meio contendo cloretos. A resistência à corrosão foi associada à estrutura obtida após o tratamento por nitretação a plasma e deposição física de vapores (PVD).

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Thin films of Ga1-xMnxN have great interest in its potential for control of electron spin (spintronics), in most cases this material is synthesized by techniques that have a high degree of control the deposition parameters, such as molecular beam epitaxy (MBE) and deposition of metalorganic chemical vapor deposition (MOCVD). The sputtering technique is an alternative route to produce such materials. Here we study the film deposition Ga1-xMnxN by reactive sputtering technique and apply enhancements such as a glove box, a residual gas analyzer and temperature control system, in order to growth films epitaxially using an analysis of the preconditions of films analyzed by spectroscopic techniques and microscopic. These procedures helped to improve the technique of deposition by cleaning substrates in an inert environment, and by the analysis of trace gases and heating the substrate holder as explained in the literature. Through the applications and comparisons it can be pointed out that the technique has the advantage of its simplicity and relatively low cost compared to MBE and MOCVD, but produces polycrystalline material

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Pós-graduação em Odontologia - FOAR

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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We have investigated the magnetic and transport properties of nanoscaled Fe3O4 films obtained from Chemical Vapor Deposition (CVD) technique using [(FeFe2III)-Fe-II(OBut)(8)] and [Fe-2(III)(OBut)(6)] precursors. Samples were deposited on different substrates (i.e., MgO (001), MgAl2O4 (001) and Al2O3 (0001)) with thicknesses varying from 50 to 350 nm. Atomic Force Microscopy analysis indicated a granular nature of the samples, irrespective of the synthesis conditions (precursor and deposition temperature, T-pre) and substrate. Despite the similar morphology of the films, magnetic and transport properties were found to depend on the precursor used for deposition. Using [(FeFe2III)-Fe-II(OBut)(8)] as precursor resulted in lower resistivity, higher M-S and a sharper magnetization decrease at the Verwey transition (T-V). The temperature dependence of resistivity was found to depend on the precursor and T-pre. We found that the transport is dominated by the density of antiferromagnetic antiphase boundaries (AF-APB's) when [(FeFe2III)-Fe-II(OBut)(8)] precursor and T-pre = 363 K are used. On the other hand, grain boundary-scattering seems to be the main mechanism when [Fe-2(III)(OBut)(6)] is used. The Magnetoresistance (MR(H)) displayed an approximate linear behavior in the high field regime (H > 796 kA/m), with a maximum value at room-temperature of similar to 2-3 % for H = 1592 kA/m, irrespective from the transport mechanism.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico - CNPq