Influence of the Substrate and Precursor on the Magnetic and Magneto-transport Properties in Magnetite Films


Autoria(s): Lima Junior, Enio; Brito, Giancarlo Esposito de Souza; Cavelius, Christian; Sivakov, Vladimir; Shen, Hao; Mathur, Sanjay; Goya, Gerardo Fabian
Contribuinte(s)

UNIVERSIDADE DE SÃO PAULO

Data(s)

31/10/2013

31/10/2013

2012

Resumo

We have investigated the magnetic and transport properties of nanoscaled Fe3O4 films obtained from Chemical Vapor Deposition (CVD) technique using [(FeFe2III)-Fe-II(OBut)(8)] and [Fe-2(III)(OBut)(6)] precursors. Samples were deposited on different substrates (i.e., MgO (001), MgAl2O4 (001) and Al2O3 (0001)) with thicknesses varying from 50 to 350 nm. Atomic Force Microscopy analysis indicated a granular nature of the samples, irrespective of the synthesis conditions (precursor and deposition temperature, T-pre) and substrate. Despite the similar morphology of the films, magnetic and transport properties were found to depend on the precursor used for deposition. Using [(FeFe2III)-Fe-II(OBut)(8)] as precursor resulted in lower resistivity, higher M-S and a sharper magnetization decrease at the Verwey transition (T-V). The temperature dependence of resistivity was found to depend on the precursor and T-pre. We found that the transport is dominated by the density of antiferromagnetic antiphase boundaries (AF-APB's) when [(FeFe2III)-Fe-II(OBut)(8)] precursor and T-pre = 363 K are used. On the other hand, grain boundary-scattering seems to be the main mechanism when [Fe-2(III)(OBut)(6)] is used. The Magnetoresistance (MR(H)) displayed an approximate linear behavior in the high field regime (H > 796 kA/m), with a maximum value at room-temperature of similar to 2-3 % for H = 1592 kA/m, irrespective from the transport mechanism.

Identificador

CURRENT NANOSCIENCE, SHARJAH, v. 8, n. 5, supl. 1, Part 2, pp. 659-668, OCT, 2012

1573-4137

http://www.producao.usp.br/handle/BDPI/37089

Idioma(s)

eng

Publicador

BENTHAM SCIENCE PUBL LTD

SHARJAH

Relação

CURRENT NANOSCIENCE

Direitos

openAccess

Copyright BENTHAM SCIENCE PUBL LTD

Palavras-Chave #MAGNETITE FILMS #CHEMICAL VAPOR DEPOSITION #MAGNETORESISTANCE #ANTI-PHASE BOUNDARIES #FE3O4 THIN-FILMS #MAGNETORESISTANCE #DEPOSITION #SEMICONDUCTORS #BEHAVIOR #DOMAINS #LIMITES ANTI-FASE #MAGNETORESISTÊNCIA #DEPOSIÇÃO QUÍMICA DE VAPOR #FILMES MAGNÉTICOS #BIOTECHNOLOGY & APPLIED MICROBIOLOGY #NANOSCIENCE & NANOTECHNOLOGY #MATERIALS SCIENCE, MULTIDISCIPLINARY
Tipo

article

original article

publishedVersion