RBAC实施中国墙策略及其变种的研究

中国墙策略的目的是防止在有竞争关系的企业间访问信息导致的利益冲突.著名的中国策略模型包括Brewer等人提出的BN模型和Sandhu提出的基于格访问控制模型实施的中国墙模型.然而这些模型都存在严重的缺陷:灵活性不够或者实施不方便.RBAC是目前主流的访问控制模型,该模型的特点是策略中立.基于RBAC模型全面研究了实施中国墙策略及其各种变种策略的方法,利用角色体系和RBAC的约束机制,给出了具体的构造方法,讨论了这些构造中约束的形式化描述方法.与传统的中国墙模型相比,更加灵活,并可在支持RBAC的系统中直接实施.

La banque d'investissement et la conglomération du secteur financier : une multiplicité d'intérêts en quête d'équilibre

Jouant un rôle crucial pour l’efficience des marchés, la banque d’investissement contemporaine se caractérise par l’exercice d’une grande diversité d’activités aussi complexes qu’hétérogènes sous un même toit. Agissant tantôt auprès d’une clientèle de particuliers, d’entreprises, d’institutions financières, de fonds d’investissement ou de gouvernements, et tantôt pour son propre compte, elle compose avec une multitude d’intérêts divergents, ce qui soulève un certain questionnement quant à la portée de l’obligation de loyauté dont elle peut être tributaire envers ses clients. Les implications répétées des banques d’affaires dans la vague de récents scandales financiers ont inévitablement affecté la confiance que les épargnants témoignent envers l’intégrité de cette institution et des marchés financiers en général. Elles ont de plus contribué significativement à relancer le débat concernant la pertinence de contrôler, et même d’éliminer les conflits d’intérêts, un phénomène largement répandu au sein de la banque d’investissement. À titre de mécanismes préventifs, les solutions de marchés et l’autodiscipline des intermédiaires financiers sont imparfaits. La réglementation des conflits d’intérêts se justifie alors afin de pallier les défaillances du marché et de l’autorégulation. Pour autant qu’il maintienne sa réglementation dans un rapport efficience-équité acceptable, l’État est appelé à concevoir des normes de contrôle aux objectifs variés, allant de la réforme structurelle du secteur financier à l’élaboration de principes généraux devant servir de balises à la conduite des intermédiaires financiers. Ainsi, dans une industrie caractérisée par une forte conglomération, la réponse des législateurs semble s’articuler autour du traitement adéquat des conflits d’intérêts, traitement qui s’opère par divers mécanismes, dont la muraille Chine, la divulgation et le refus d’agir.

O insider trading no direito brasileiro

O insider trading é ilícito de elevado potencial danoso, pois impacta não só as pessoas diretamente relacionadas com a operação realizada com a informação privilegiada, mas também o mercado de capitais como um todo, afetando a confiança dos investidores. É importante, portanto, a repressão severa do ilícito nas esferas administrativa, civil e penal, destacando-se o papel regulador da Comissão de Valores Mobiliários, enquanto representante da intervenção do poder estatal no âmbito do mercado de capitais. Não obstante, para a responsabilização pelo ilícito do insider trading, deve-se exigir um conjunto probatório robusto, ainda que apenas indiciário. A utilização de uma espécie de muralha segregadora, se minimiza situações de conflito de interesses ao evitar o acesso amplo a informações relevantes não divulgadas ao mercado, não é, por si só, capaz de excluir responsabilidade por eventual insider trading. Importante ter cuidado com construções teóricas, como a da “mente corporativa”, capazes de esvaziar de utilidade barreiras como uma Chinese Wall. Impossível transpor a teoria do domínio do fato à apuração de ilícitos de insider trading.

Creeping insulation - Hong Kong green wall

Hong Kong is a densely populated city suffering badly from the urban heat island effect. Green wall offers a means of ameliorating the situation but there are doubts over its suitability in Hong Kong’s unique environment. In this paper, we look at the potential for green walls in Hong Kong first by summarising some of the Chinese green walling systems and associated vegetation in use, then by an introduction to three existing green walls in Hong Kong, and finally through a small experiment aimed at identifying the likely main effects of green walled housing. The results indicate that green walling in Hong Kong is likely to provide enhanced internal house environment in terms of warm weather temperature reduction, stabilisation and damping, with direct energy savings in air-conditioning and indirect district benefits of reduced heat island effect and carbon emissions. The green walling insulation properties also suggest the possibility of warmer homes in winter and/or energy savings in mechanical heating provision.

Creeping insulation - Hong Kong green wall

Hong Kong is a densely populated city suffering badly from the urban heat island effect. Green wall offers a means of ameliorating the situation but there are doubts over its suitability in Hong Kong’s unique environment. In this paper, we look at the potential for green walls in Hong Kong first by summarizing some of the Chinese green walling systems and associated vegetation in use, then by an introduction to three existing green walls in Hong Kong, and finally through a small experiment aimed at identifying the likely main effects of green walled housing. The results indicate that green walling in Hong Kong is likely to provide enhanced internal house environment in terms of warm weather temperature reduction, stabilization and damping, with direct energy savings in air-conditioning and indirect district benefits of reduced heat island effect and carbon emissions. The green walling insulation properties also suggest the possibility of warmer homes in winter and/or energy savings in mechanical heating provision.

Reflection of shock-wave in pur foam from rigid wall

Keller proposed that a building, a mechanical installation or a body wrapped bya layer of foam plastics may be an efficient means for protection from damage ofblast wave. However, the practical effect was beyond expectation. For example, agunner wearing the foam plastics-padded waistcoat was injured more seriously by theblast wave from a muzzle. Monti took the foam plastics as homogeneous two-phasemedium and analyzed it with the theory of dusty flow. The obtained results showthat the peak pressure behind the reflected shock wave from rigid wall with foamcoat exceeds obviously that without foam coat under the same condition. Gel'fand,Patz and Weaver made experimental observations by means of shock tubes and veri-

In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD

The in-situ p-type doping of 4H-SiC grown on off-oriented (0001) 4H-SiC substrates was performed with trimethylaluminum (TMA) and/or diborane (B2H6) as the dopants. The incorporations of Al and B atoms and their memory effects and the electrical properties of p-type 4H-SiC epilayers were characterized by secondary ion mass spectroscopy (SIMS) and Hall effect measurements, respectively. Both Al- and B-doped 4H-SiC epilayers were p-type conduction. It was shown that the profiles of the incorporated boron and aluminum concentration were in agreement with the designed TMA and B2H6 flow rate diagrams. The maximum hole concentration for the Al doped 4H-SiC was 3.52x10(20) cm(-3) with Hall mobility of about 1 cm(2)/Vs and resistivity of 1.6 similar to 2.2x10(-2) Omega cm. The heavily boron-doped 4H-SiC samples were also obtained with B2H6 gas flow rate of 5 sccm, yielding values of 0.328 Omega cm for resistivity, 5.3x10(18) cm(-3) for hole carrier concentration, and 7 cm(2)/VS for hole mobility. The doping efficiency of Al in SiC is larger than that of B. The memory effects of Al and B were investigated in undoped 4H-SiC by using SIMS measurement after a few run of doped 4H-SiC growth. It was clearly shown that the memory effect of Al is stronger than that of B. It is suggested that p-type 4H-SiC growth should be carried out in a separate reactor, especially for Al doping, in order to avoid the join contamination on the subsequent n-type growth. 4H-SiC PiN diodes were fabricated by using heavily B doped epilayers. Preliminary results of PiN diodes with blocking voltage of 300 V and forward voltage drop of 3.0 V were obtained.

Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition

Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get high quality 4H-SiC epilayers. Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates purchased from Cree is performed at a typical temperature of 1500 degrees C with a pressure of 40 Torr by using SiH4+C2H4+H-2 gas system. The surface morphologies and structural and optical properties of 4H-SiC epilayers are characterized with Nomarski optical microscope, atomic force microscopy (AFM), x-ray diffraction, Raman scattering, and low temperature photoluminescence (LTPL). The background doping of 32 pm-thick sample has been reduced to 2-5 x 10(15) cm(-3). The FWHM of the rocking curve is 9-16 arcsec. Intentional N-doped and B-doped 4H-SiC epilayers are obtained by in-situ doping of NH3 and B2H6, respectively. Schottky barrier diodes with reverse blocking voltage of over 1000 V are achieved preliminarily.

Growth and characterization of 4H-SiC by horizontal hot-wall CVD

4H-SiC layers have been homoepitaxially grown at 1500 degrees C with the use of a horizontal hot-wall chemical vapor deposition (CVD) system, which was built in the author's group. The typical growth rate was 2 mu m/h at a pressure of 40 Torr. The background donor concentration has been reduced to 2.3 x 10(15) cm(-3) during a prolonged growth run. It confirmed the idea that the high background concentration of thin films was caused by the impurities inside the susceptor and thermal insulator The FWHM of x-ray co-rocking curves show 9 similar to 15 aresecs in five different areas of a 32-mu m-thick 4H-SiC epilayer The free exciton peaks dominated in the near-band-edge low-temperature photoluminescence spectrum (LTPL), indicating high crystal quality.

Uniformity Investigation in 3C-SiC Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD

50mm 3C-SiC epilayers are grown on （100） and （111） Si substrates in a newly developed horizontal lowpressure hot-wall CVD reactor under different growth pressures and flow rates of H_2 carrier gas. The structure,electrical properties, and thickness uniformity of the 3C-SiC epilayers are investigated by X-ray diffraction （XRD） ,sheet resistance measurement, and spectroscopic ellipsometry. XRD patterns show that the 3C-SiC films have excellent crystallinity. The narrowest full widths at half maximum of the SIC（200） and （111） peaks are 0.41° and 0.21°, respectively. The best electrical uniformity of the 50mm 3C-SiC films obtained by sheet resistance measurement is 2.15%. A σ/mean value of ± 5.7% in thickness uniformity is obtained.

Studies of a scintillator-bar detector for neutron wall at externaltarget facility

To achieve a better time resolution of a scintillator-bar detector for a neutron wall at the external target facility of HIRFL-CSR,we have carried out a detailed study of the photomultiplier,the wrapping material and the coupling media. The timing properties of a scintillator-bar detector have been studied in detail with cosmic rays using a high and low level signal coincidence. A time resolution of 80 ps has been achieved in the center of the scintillator-bar detector.

Study of the LED based light calibration system for neutron wall detector

The light calibration system is one of the key components of Neutron Wall detector. It is used to calibrate the electronics and to monitor the long-term stability of the detector modules. With the detaile investigations, a calibration system with high-power LED (3W) driven by the fast pulses has been carried out. It is also tested together with the detector module of the Neutron Wall and the result of the preliminary calibration demonstrates that it fulfills the needs. It's a new design proposal to the light calibration system of the fast scintillator detector.

Monte Carlo simulation of the neutron detection wall at RIBLL II in HIRFL-CSR

With the construction of the new Radioactive Ion Beam Line in Lanzhou (RIBLL II) which connects the CSRm and the CSRe, an experimental setup for physics research is highly required. A large area neutron detection wall is the main part of the setup. This paper introduced the detection principle of the neutron detection wall and the Monte-Carlo simulation of its design under the environment of the Geant4 toolkit. We presented the final design with the optimized parameters and the performance of the wall.