Desenvolvimento de substrato cerâmico BiNbO4 para antenas de microfita de sistemas de comunicações sem fio

The main purpose of this work was the development of ceramic dielectric substrates of bismuth niobate (BiNbO4) doped with vanadium pentoxide (V2O5), with high permittivity, used in the construction of microstrip patch antennas with applications in wireless communications systems. The high electrical permittivity of the ceramic substrate provided a reduction of the antenna dimensions. The numerical results obtained in the simulations and the measurements performed with the microstrip patch antennas showed good agreement. These antennas can be used in wireless communication systems in various frequency bands. Results were satisfactory for antennas operating at frequencies in the S band, in the range between 2.5 GHz and 3.0 GHz.

Embedded heat pipes in cofired ceramic substrates for enhanced thermal management of electronics

A novel and new thermal management technology for advanced ceramic microelectronic packages has been developed incorporating miniature heat pipes embedded in the ceramic substrate. The heat pipes use an axially grooved wick structure and water as the working fluid. Prototype substrate/heat pipe systems were fabricated using high temperature co-fired ceramic (alumina). The heat pipes were nominally 81 mm in length, 10 mm in width, and 4 mm in height, and were charged with approximately 50–80 μL of water. Platinum thick film heaters were fabricated on the surface of the substrate to simulate heat dissipating electronic components. Several thermocouples were affixed to the substrate to monitor temperature. One end of the substrate was affixed to a heat sink maintained at constant temperature. The prototypes were tested and shown to successful and reliably operate with thermal loads over 20 Watts, with thermal input from single and multiple sources along the surface of the substrate. Temperature distributions are discussed for the various configurations and the effective thermal resistance of the substrate/heat pipe system is calculated. Finite element analysis was used to support the experimental findings and better understand the sources of the system's thermal resistance. ^

Embedded Heat Pipes in Cofired Ceramic Substrates for Enhanced Thermal Management of Electronics

A novel and new thermal management technology for advanced ceramic microelectronic packages has been developed incorporating miniature heat pipes embedded in the ceramic substrate. The heat pipes use an axially grooved wick structure and water as the working fluid. Prototype substrate/heat pipe systems were fabricated using high temperature co-fired ceramic (alumina). The heat pipes were nominally 81 mm in length, 10 mm in width, and 4 mm in height, and were charged with approximately 50-80 mL of water. Platinum thick film heaters were fabricated on the surface of the substrate to simulate heat dissipating electronic components. Several thermocouples were affixed to the substrate to monitor temperature. One end of the substrate was affixed to a heat sink maintained at constant temperature. The prototypes were tested and shown to successful and reliably operate with thermal loads over 20 Watts, with thermal input from single and multiple sources along the surface of the substrate. Temperature distributions are discussed for the various configurations and the effective thermal resistance of the substrate/heat pipe system is calculated. Finite element analysis was used to support the experimental findings and better understand the sources of the system's thermal resistance.

Characteristics of a Microstrip-Excited High-Permittivity Tectangular Dielectric Resonator Antenna

The radiation characteristics of a microstrip-line-excited rectangular dielectric resonator antenna (DRA) are studied experimentally.The radiation charactristics and excitation of different modes are highly influenced by the orientation of the DR,feed line parameters ,and finite size of the ground plane

Chemical deposition of La0.7Ca0.3MnO3±δ films on ceramic substrates

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Sputter optimization of AlN on diamond substrates for high frequency SAW resonators

The AlN/diamond structure is an attractive combination for SAW devices and its application at high frequencies. In this work, the synthesis of AlN thin films by reactive sputtering has been optimized on diamond substrates in order to process high frequency devices. Polished microcrystalline and as-grown nanocrystalline diamond substrates have been used to deposit AlN of different thickness under equal sputtering conditions. For the smoother substrates, the FWHM of the rocking curve of the (002) AlN peak varies from 3.8° to 2.7° with increasing power. SAW one port resonators have been fabricated on these films, whose electrical characterization (in terms of S11 parameters) is reported.

Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators

AlN/diamond heterostructures are very promising for high frequency surface acoustic wave (SAW) resonators. In their design, the thickness of the piezoelectric film is one of the key parameters. On the other hand, the film material quality and, hence, the device performance, also depend on that thickness. In this work, polished microcrystalline diamond substrates have been used to deposit AlN films by reactive sputtering, from 150 nm up to 3 μm thick. A high degree of the c-axis orientation has been obtained in all cases. SAW one port resonators at high frequency have been fabricated on these films with a proper combination of the film thickness and transducer size.

Epitaxial growth of molecular crystals on van der Waals substrates for high-performance organic electronics

Epitaxial van der Waals (vdW) heterostructures of organic and layered materials are demonstrated to create high-performance organic electronic devices. High-quality rubrene films with large single-crystalline domains are grown on h-BN dielectric layers via vdW epitaxy. In addition, high carrier mobility comparable to free-standing single-crystal counterparts is achieved by forming interfacial electrical contacts with graphene electrodes.

Enhanced Bandwidth Microstrip Patch Antennas Loaded with High Permittivity Dielectric Resonators

A novel technique fitr the bat dividth enhancement of conventional rectangular microstrip antenna is proposed in this paper. When a high permittivity dielectric resonator of suitable resonant frequency was loaded over the patch. the % bandwidth of the antenna was increased by more than five tunes without much affecting its gain and radiation performance. A much more improved bandwidth was obtained when the dielectric resonator was placed on the feedline. Experimental study shows a 2:1 VSWR bandwidth of more than 10% and excellent cross polarization performance with increased pass band and radiation coverage abnost the same as that of rectangular microstrip antenna

A compact very-high-permittivity dielectric-eye resonator antenna for multiband wireless applications

very-high-permittivity (e, = 100) multiband dielectrice> e resonator antenna is presented. The compact antenna, excited by a m:'crostrip line, resonates at two frequencies centered around the 1.9- GHz and 2.4-GHz bands with identical polarization . The behavior of the antenna at different positions along the feed line is studied and optimized. Multiple resonances with the same polarization and broad radioticn patterns suggest the suitability of the antenna for multiband wireless application

T-strip-fed High-Permittivity Rectangular Dielectric Resonator Antenna for Broadband Applications

rectangular low-density, high-permittivity dielectric resona or antenna (DRA) excited by T-shaped microstrip feed offering a 2:1 VSWR bandwidth of -22% at 2.975 GHz is reported. The design methoaology and experimental results of the antenna are discussed. The excellent gain and radiation performance of the proposed antenna project: it as a potential candidate for telecommunication applications

High Permittivity and Low Ceramics in the Bao-SrO-Nb2O5 System

A new group of compounds with composition (Ba5-xSrx) Nb4015, having high permittivity and low loss have been prepared and characterized in the microwave frequency region . X-ray diffraction studies showed that monophase compound existed for all values of x from 0 to 5. Microwave dielectric properties such as and c f showed smooth variation with x , while the unloaded quality factor (Qu) showed remarkable improvement with x

New High Permittivity and Low Loss Ceramics in the Bao-Ti02- Nb205 Composition

New dielectric ceramics with formula BaTi3Nb4, O„ and Ba6Til4Nbz039 have been prepared and characterized. BaTi3Nba017 was densified to 92% of TD after firing at 1310 oC for 4 h. However, Ba6Ti 1 4Nb2O39 fired under optimized conditions (1260 ` C for 4 h) showed only 85% TD together with secondary phase. The crystal system of both of the compositions is orthorhombic