Epitaxial growth of molecular crystals on van der Waals substrates for high-performance organic electronics
| Data(s) |
08/05/2014
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| Resumo |
Epitaxial van der Waals (vdW) heterostructures of organic and layered materials are demonstrated to create high-performance organic electronic devices. High-quality rubrene films with large single-crystalline domains are grown on h-BN dielectric layers via vdW epitaxy. In addition, high carrier mobility comparable to free-standing single-crystal counterparts is achieved by forming interfacial electrical contacts with graphene electrodes. |
| Identificador | |
| Idioma(s) |
eng |
| Direitos |
info:eu-repo/semantics/restrictedAccess |
| Fonte |
Lee , C H , Schiros , T , Santos , E J G , Kim , B , Yager , K G , Kang , S J , Lee , S , Yu , J , Watanabe , K , Taniguchi , T , Hone , J , Kaxiras , E , Nuckolls , C & Kim , P 2014 , ' Epitaxial growth of molecular crystals on van der Waals substrates for high-performance organic electronics ' Advanced Materials , vol 26 , no. 18 , pp. 2812-2817 . DOI: 10.1002/adma.201304973 |
| Palavras-Chave | #hexagonal boron nitride (h-BN) #organic semiconductors organic field-effect transistors #rubrene #van der Waals heterostructures |
| Tipo |
article |
