Leakage current behavior in pulsed laser deposited Ba(Zr0.05Ti0.95)O3 thin films

Barium zirconium titanate [Ba(Zr0.05Ti0.95)O3, BZT] thin films were prepared by pulsed laser ablation technique and dc leakage current conduction behavior was extensively studied. The dc leakage behavior study is essential, as it leads to degradation of the data storage devices. The current-voltage (I-V) of the thin films showed an Ohmic behavior for the electric field strength lower than 7.5 MV/m. Nonlinearity in the current density-voltage (J-V) behavior has been observed at an electric field above 7.5 MV/m. Different conduction mechanisms have been thought to be responsible for the overall I-V characteristics of BZT thin films. The J-V behavior of BZT thin films was found to follow Lampert’s theory of space charge limited conduction similar to what is observed in an insulator with charge trapping moiety. The Ohmic and trap filled limited regions have been explicitly observed in the J-V curves, where the saturation prevailed after a voltage of 6.5 V referring the onset of a trap-free square region. Two different activation energy values of 1.155 and 0.325 eV corresponding to two different regions have been observed in the Arrhenius plot, which was attributed to two different types of trap levels present in the film, namely, deep and shallow traps.

Leakage current behavior of Bi3.25La0.75Ti3O12 ferroelectric thin films deposited on different bottom electrodes

Bi3.25La0.75Ti3O12 (BLT) thin films were grown on LaNiO3 (LNO), RuO2 (RuO2) and La0.5Sr0.5CoO3 (LSCO) bottom electrodes by using the polymeric precursor method and microwave furnace. The bottom electrode is found to be an important parameter which affects the crystallization, morphology and leakage current behaviors. The XRD results clearly show that film deposited on LSCO electrode favours the growth of (117) oriented grains whereas in films deposited on LNO and RuO2 the growth of (001) oriented grains dominated. The film deposited on LSCO has a plate-like grain structure, and its leakage current behavior is in agreement with the prediction of the space-charge-limited conduction model. on the other hand, the films deposited on RuO2 and LNO electrodes present a rounded grain shape with some porosity, and its high field conduction is well explained by the Schottky and Poole-Frenkel emission models. The remanent polarization (P-r) and the drive voltage (V-c) were in the range of 11-23 mu C cm(-2) and 0.86-1.56 V, respectively, and are better than the values found in the literature. (c) 2007 Published by Elsevier B.V.

Large reduction of leakage current by graded-layer La doping in (Ba0.5, Sr0.5)TiO3 thin films

A large reduction in the leakage current behavior in (Ba, Sr)TiO3 (BST) thin films was observed by graded-layer donor doping. The graded doping was achieved by introducing La-doped BST layers in the grown BST films. The films showed a large decrease (about six orders of magnitude) in the leakage current in comparison to undoped films at an electric field of 100 kV/cm. The large decrease in leakage current was attributed to the formation of highly resistive layers, originating from compensating defect chemistry involved for La-doped films grown in oxidizing environment. Temperature-dependent leakage-current behavior was studied to investigate the conduction mechanism and explanations of the results were sought from Poole–Frenkel conduction mechanism.

Flux line lattice structure and behavior in antiphase boundary free vicinal YBa2Cu3O7-delta thin films

Field angle dependent critical current, magneto-optical microscopy and high resolution electron microscopy studies have been performed on YBa2Cu3O7-delta thin films grown on miscut substrates. High resolution electron microscopy images show that the films studied exhibited clean epitaxial growth with a low density of antiphase boundaries and stacking faults. Any antiphase boundaries (APBs) formed near the film substrate interface rapidly healed rather than extending through the thickness of the film. Unlike vicinal films grown on annealed substrates, which contain a high density of antiphase boundaries, magneto-optical imaging showed no filamentary flux penetration in the films studied. The flux penetration is, however, asymmetric. This is associated with intrinsic pinning of flux strings by the tilted a-b planes and the dependence of the pinning force on the angle between the local field and the a-b planes. Field angle dependent critical current measurements exhibited the striking vortex channeling effect previously reported in vicinal films. By combining the results of three complementary characterization techniques it is shown that extended APB free films exhibit markedly different critical current behavior compared to APB rich films. This is attributed to the role of APB sites as strong pinning centers for Josephson string vortices between the a-b planes. (C) 2003 American Institute of Physics.

Modeling sub-threshold current-voltage characteristics in thin film transistors

In this paper, we present a physically-based compact model for the sub-threshold behavior in a TFT with an amorphous semiconductor channel. Both drift and diffusion current components are considered and combined using an harmonic average. Here, the diffusion component describes the exponential current behavior due to interfacial deep states, while the drift component is associated with presence of localized deep states formed by dangling bonds broken from weak bonds in the bulk and follows a power law. The proposed model yields good agreement with measured results. © 2013 IEEE.

Categorizing users in behavior change support systems based on cognitive dissonance

Most developers of behavior change support systems (BCSS) employ ad hoc procedures in their designs. This paper presents a novel discussion concerning how analyzing the relationship between attitude toward target behavior, current behavior, and attitude toward change or maintaining behavior can facilitate the design of BCSS. We describe the three-dimensional relationships between attitude and behavior (3D-RAB) model and demonstrate how it can be used to categorize users, based on variations in levels of cognitive dissonance. The proposed model seeks to provide a method for analyzing the user context on the persuasive systems design model, and it is evaluated using existing BCSS. We identified that although designers seem to address the various cognitive states, this is not done purposefully, or in a methodical fashion, which implies that many existing applications are targeting users not considered at the design phase. As a result of this work, it is suggested that designers apply the 3D-RAB model in order to design solutions for targeted users.

Leakage current, ferroelectric and structural properties in Pb(1-x)Ba(x)TiO(3) thin films prepared by chemical route

Single-phase perovskite structure Pb(1-x)Ba(x)TiO(3) thin films (x = 0.30, 0.50 and 0.70) were deposited on Pt/Ti/SiO(2)/Si substrates by the spin-coating technique. The dielectric study reveals that the thin films undergo a diffuse type ferroelectric phase transition, which shows a broad peak. An increase of the diffusivity degree with the increasing Barium contents was observed, and it was associated to a grain decrease in the studied composition range. The temperature dependence of the phonon frequencies was used to characterize the phase transition temperatures. Raman modes persist above tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive. The origin of these modes was interpreted in terms of breakdown of the local cubic symmetry by chemical disorder. The absence of a well-defined transition temperature and the presence of broad bands in some interval temperature above FE-PE phase transition temperature Suggested a diffuse type phase transition. This result corroborates the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in these thin films. The leakage Current density of the PBT thin films was studied at different temperatures and the data follow the Schottky emission model. Through this analysis the Schottky barrier height values 0.75, 0.53 and 0.34 eV were obtained to the PBT70, PBT50 and PBT30 thin films, respectively. (C) 2008 Elsevier Ltd. All rights reserved.

Resistive-Switching Behavior in Polycrystalline CaCu3Ti4O12 Nanorods

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Critical current degradation of Bi-2223 composite tapes induced by cyclic deformation and fatigue-related effects

Application of high temperature superconductor Bi2Sr2Ca2Cu3Ox. (Bi-2223) compound embedded in an Ag matrix requires the knowledge of critical current as a function of mechanical properties. Commercial tapes available in different types have been developed in industrial production scale in which a combination of small diameter filaments, long tape lengths and a ductile matrix results in a conductor with low crack formation and good tolerance against strain. The measurement of critical current and the evaluation of n-index from V-I characteristic curves of Bi-2223/Ag composite tapes subjected to an initial bending strain as a function of number of thermal cycles were done for two types of Bi-2223/Ag composite tapes: with and without steel tape reinforcement. The results showed that tapes with reinforcement presented small critical current degradation as a function of the number of thermal cycles whereas tapes without reinforcement exhibited steadily critical current degradation caused by the propagation of cracks. The n-index followed the same critical current behavior.

Initial psychometric evaluation of the Wayfinding Effectiveness Scale

This study evaluates three versions of the Wayfinding Effectiveness Scale (WES), developed to differentiate problems of wayfinding and wandering behavior of community-residing elders with dementia (EWD), in 266 dyads (EWD and caregiver) recruited from Alzheimer's Association chapters. Factor analyses yield a five-factor solution (explained variance = 62.6%): complex wayfinding goals, analytic strategies, global strategies, simple wayfinding goals, and being stimulus bound. Overall, internal consistencies are high: WES (.94-.95), and subscales are stable across all versions. Testretest reliability is acceptable for the overall WES and two subscales (complex and simple wayfinding goals) for the care recipient current behavior version. Construct validity is supported by the pattern of correlations among subscales and analyses of variance (ANOVAs) showing significant differences among the care recipient (current vs. prior behavior) and caregiver versions overall and for all subscales. Results support the WES as a valid and reliable measure of wayfinding effectiveness in persons with dementia.

Improved ferroelectric and leakage properties in symmetric BiFeO3/SrTiO3 superlattice

Symmetric BiFeO3/SrTiO3 superlattices were fabricated by pulsed laser deposition on SrTiO3 (100) substrates. Frequency independent and near saturated P-E hysteresis was observed in the case of a superlattice (periodicity of ∼ 11 nm) as compared to leaky hysteresis observed in epitaxial BiFeO3. Room temperature leakage current density of the superlattice was almost two orders of magnitude lower than that of BiFeO3. Observed leakage current behavior in case of both BiFeO3 and superlattice indicates the dominance of space charge limited conduction. Improvement in ferroelectric property was discussed in connection to enhanced epitaxial strain, reduced leakage current, and electrostatic interaction between BiFeO3 and SrTiO3.

Fabrication and transport properties of ZnO/Nb-1 wt %-doped SrTiO3 epitaxial heterojunctions

(110) ZnO/(001) Nb-1 wt %-doped SrTiO3 n-n type heteroepitaxial junctions were fabricated using the pulse laser deposition method. A diodelike current behavior was observed. Different from conventional p-n junctions or Schottky diodes, the diffusion voltage was found to increase with temperature. At all temperatures, the forward current was perfectly fitted on the thermionic emission model. The band bending at the interface can qualitatively explain our results, and the extracted high ideality factor at low temperatures, as well as large saturation currents, is ascribed to the deep-level-assisted tunneling current through the junction. (C) 2008 American Institute of Physics.

Electrochemical Oxidation of Hydrogen Sulfide at Platinum Electrodes in Room Temperature Ionic Liquids: Evidence for Significant Accumulation of H2S at the Pt/1-Butyl-3-methylimidazolium Trifluoromethylsulfonate Interface

Electrochemical oxidation of hydrogen sulfide gas (H2S) has been studied at a platinum microelectrode (10 mu m diameter) in five room temperature ionic liquids (RTILs): [C(4)mim][OTf], [C(4)dmim][NTf2], [C(4)mim][PF6],. [C(6)mim][FAP], and [P-14,P-6,P-6,P-6][FAP] (where [C-n mim](+) = 1-alkyl-3-methylimidazolium, [C(n)dmim](+) = 1-alkyl-2,3-dimethylimidazolium, [P-14,P-6,P-6,P-6](+) = tris(p-hexyl)-tetradecylphosphonium, [OTf](-) = trifluoromethlysulfonate, [NTf2](-) = bis(trifluoromethylsulfonyl)imide, [PF6](-) = hexafluorophosphate, and [FAP](-) = trifluorotris(pentafluoroethyl)phosphate). In four of the RTILs ([C(4)dmim][NTf2], [C(4)mim][PF6], [C(6)mim][FAP], and [P-14,P-6,P-6,P-6][FAP]), no clear oxidative signal was observed. In [C(4)mim][OTf], a chemically irreversible oxidation peak was observed on the oxidative sweep with no signal seen on the reverse scan. The oxidative signal showed an adsorptive stripping peak type followed by near steady-state limiting current behavior. Potential step chronoamperometry was carried out on the reductive wave, giving a diffusion coefficient and solubility of 1.6 x 10(-11) m(2) s(-1) and 7 mM, respectively (at 25 degrees C). Using these data, we modeled the oxidation signal kinetically, assuming adsorption preceded oxidation and that adsorption was approximately Langmuirian. The oxidation step was described by an electrochemically fully irreversible Tafel law/Butler-Volmer formalism. Modeling indicated a substantial buildup of H2S in the double layer in excess of the coverage that would be expected for a monolayer of chemisorbed H2S, reflecting high solubility of the gas in [C(4)mim][OTf] and possible attractive interactions with the [OTf](-) anions accumulated at the electrode at potentials positive of the potential of zero charge. Solute enrichment of the double layer in the solution adjacent to the electrode appears a novel feature of RTIL electrochemistry.

Enhanced ferroelectric properties of La-substituted BiFeO3 thin films on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates prepared by the soft chemical method

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Mnltiloop Controller and Reference Generator for a Dynamic Voltage Restorer Implementation

This paper deals with the design and analysis of a Dynamic Voltage Restorer output voltage control. Such control is based on a multiloop strategy, with an inner current PID regulator and an outer P+Resonant voltage controller. The inner regulator is applied on the output inductor current. It will be also demonstrated how the load current behavior may influence in the DVR output voltage, which. justifies the need for the resonant controller. Additionally, it will be discussed the application of a modified algorithm for the identification of the DVR voltage references, which is based on a previously presented positive sequence detector. Since the studied three-phase DVR is assumed to be based on three identical H-bridge converters, all the analysis and design procedures were realized by means of single-phase equivalent circuits. The discussions and conclusions are supported by theoretical calculations, nonlinear simulations and some experimental results.