Simultaneous enhancement of electrical conductivity and thermopower in Bi2S3 under hydrostatic pressure

The inverse coupled dependence of electrical conductivity and thermopower on carrier concentration presents a big challenge in achieving a high figure of merit. However, the simultaneous enhancement of electrical conductivity and thermopower can be realized in practice by carefully engineering the electronic band structure. Here by taking the example of Bi2S3, we report a simultaneous increase in both electrical conductivity and thermopower under hydrostatic pressure. Application of hydrostatic pressure enables tuning of electronic structure in such a way that the conductivity effective mass decreases and the density of states effective mass increases. This dependence of effective masses leads to simultaneous enhancement in electrical conductivity and thermopower under n-type doping leading to a huge improvement in the power factor. Also lattice thermal conductivity exhibits very weak pressure dependence in the low pressure range. The large power factor together with low lattice thermal conductivity results in a high ZT value of 1.1 under n-type doping, which is nearly two times higher than the previously reported value. Hence, this pressure-tuned behaviour can enable the development of efficient thermoelectric devices in the moderate to high temperature range. We further demonstrate that similar enhancement can be observed by generating chemical pressure by doping Bi2S3 with smaller iso-electronic elements such as Sb at Bi sites, which can be achieved experimentally.

Influence of interface modification on the performance of polymer/Bi2S3 nanorods bulk heterojunction solar cells

In this paper, bulk heterojunction photovoltaic devices based on the poly[2-methoxy-5-(3',7'-dimethyloctyloxy)- 1,4-phenylenevinylene] (MDMO-PPV):Bi2S3 nanorods hybrid material were present. To optimize the performance of the devices, the interface modification of the hybrid material that has a significant impact on the exciton dissociation efficiency was studied. An improvement in the device performance was achieved by modifying the Bi2S3 surface with a thin dye layer. Moreover, modifying the Bi2S3 surface with anthracene-9-carboxylic acid can enhance the performance further. Compared with the solar cells with Bi2S3 nanorods hybrid with the MDMO-PPV as the active layer, the anthracene-9carboxylic acid modified devices are better in performance, with the power conversion efficiency higher by about one order in magnitude.

Facile Synthesis and Characterization of Single Crystalline Bi2S3 with Various Morphologies

Single crystalline Bi2S3 With various morphologies (wires, rods, and flowers) has been successfully prepared via a simple polyol solution process and characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and transmission electron microscopy (TEM) techniques. The morphologies of Bi2S3 crystals are highly dependent on the experimental parameters, including the reaction temperature, reactant ratio, sulfur source, and additive. The adjustment of these parameters can lead to an obvious shape evolution of products, and the growth mechanism has been proposed.

Morphological structure of bismuth-doped n-type amorphous germanium sulphide semiconductors

Recent observation of n-type conduction in amorphous Ge20Ss_xBix at large bismuth concentrations (x = 11), which otherwise shows p-type conduction, has aroused considerable interest in the international scientific community [1]. The mechanism of such impurity incorporation in a germanium chalcogenide glass is not understood and is a topic of current interest. In our recent publications [2-10] we have brought to light some hitherto unknown and interesting features of bismuth dopants in chalcogen-rich Ge-X (X -- S, Se) glassy compositions. In this communication we present our new results of investigations on vitreous semiconductors Ge20S80 Bi using electron microscopy, electron diffraction of as-prepared and annealed/pressure quenched compositions. Our results provide conclusive support to the formation of composite clusters containing all the three elements, germanium, sulphur and bismuth, which crystallize in simpler stoichiometric compounds Bi2S3 and GeS2.

Bismuth sulfide: A high-capacity anode for sodium-ion batteries

Exploring high-performance anode materials is currently one of the most urgent issues towards practical sodium-ion batteries (SIBs). In this work, Bi2S3 is demonstrated to be a high-capacity anode for SIBs for the first time. The specific capacity of Bi2S3 nanorods achieves up to 658 and 264 mAh g-1 at a current density of 100 and 2000 mA g-1, respectively. A full cell with Na3V2(PO4)3-based cathode is also assembled as a proof of concept and delivers 340 mAh g-1 at 100 mA g-1. The sodium storage mechanism of Bi2S3 is investigated by ex-situ XRD coupled with high-resolution TEM (HRTEM), and it is found that sodium storage is achieved by a combined conversion-intercalation mechanism.

Solubilities of Pb+2, Bi+3, Sb+3 and Cu+1 sulphides in (NaCl KCl Na2S) melts

Solubilities of common metal sulfides have been determined in the (NaCl+KCl) eutectic melt with and without Na2S. A novel gas-phase equilibrium technique has been used for PbS, Bi2S3, and So2S3, and an improved liquid phase equilibrium technique for Cu2S, which eliminates the errors due to physical entrapment of the sulfide phase and segregation on quenching, enabling precise measurements to be made. Solubilities in the (NaCl+KCl) eutectic melt were determined as a function of temperature in the rante 700° to 950°C, and were found to be small. The partial molar heats of mixing of the sulfides in the eutectic melt have been calculated from the solubility measurements, to be 13.3, 31.4, 37.1, and 49.0 kcal for PbSs), Sb2S2(l), and Cu2S(s), respectively. Sodium sulfide addition was observed to enhance these solubilities, the effect being largest for Cu2S followed by Sb2S3, Bi2S3, and PbS. This effect is explained qualitatively. It was observed that PbS and Sb2S3 obey Henry's law up to saturation in (NaCl+KCl+Na2S) melts.

New single-source precursor for bismuth sulfide and its use as low-cost counter electrode material for dye-sensitized solar cells

One new homoleptic Bi(dtc)(3)] (1) (dtc = 4-hydroxypiperdine dithiocarbamate) has been synthesized and characterized by microanalysis, IR, UV-Vis, H-1 and C-13 spectroscopy and X-ray crystallography. The photoluminescence spectrum for the compound in DMSO solution was recorded. The crystal structure of 1 displayed distorted octahedral geometry around the Bi(III) center bonded through sulfur atoms of the dithiocarbamate ligands. TGA indicates that the compound decomposes to a Bi and Bi-S phase system. The Bi and Bi-S obtained from decomposition of the compound have been characterized by pXRD, EDAX and SEM. Solvothermal decomposition of 1 in the absence and presence of two different capping agents yielded three morphologically different Bi2S3 systems which were deployed as counter-electrode in dye-sensitized solar cells (DSSCs). (C) 2015 Elsevier B.V. All rights reserved.

In Situ Crystallographic Probing on Ameliorating Effect of Sulfide Additives and Carbon Grafting in Iron Electrodes

Beneficial effects of carbon grafting into the iron active material for rechargeable alkaline-iron-electrodes with and without Bi2S3 additive is probed by in situ X-ray diffraction in conjunction with Extended X-ray Absorption Fine Structure (EXAFS) and electrochemistry. EXAFS data unravel that the composition of pristine active material (PAM) for iron electrodes comprises 87% of magnetite and 13% of alpha-iron while carbon-grafted active material comprises 60% of magnetite and 40% of alpha-iron. In situ XRD patterns are recorded using a specially designed electrochemical cell. XRD data reflect that magnetite present in PAM iron electrode, without bismuth sulfide additive, is not reduced during charging while PAM iron electrode with bismuth sulfide additive is partially reduced to alpha-Fe/Fe(OH)(2). Interestingly, carbon-grafted-iron electrodes with bismuth sulfide exhibit complete conversion of active material to alpha-Fe/Fe(OH)2. The ameliorating effect of carbon grafting is substantiated by kinetic parameters obtained from steady-state potentiostatic polarization and Tafel plots. The mechanism for iron-electrode charge - discharge reactions are discussed in the light of the potential - pH diagrams for Fe - H2O, S - H2O and FeSads - H2O systems and it is surmised that carbon grafting into iron active material promotes its electrochemical utilization. (C) The Author(s) 2015. Published by ECS. All rights reserved.

地幔副矿物和硫化物的热（PVT）状态方程研究

矿物PVT状态方程是研究矿物在一定温压条件下的晶胞体积与温度、压力之间的关系，依据这个基本关系，可以了解矿物在高温高压下的密度、弹性、热膨胀等性质。矿物PVT状态方程的研究可以了解矿物在地球深部存在的结构状态，为进一步的理论计算提供基础的数据，其结果也可以与天然和人工地震的地震波反演的结果对比，对地球深部的地质作用过程、物质结构状态和组成进行限制。然而，目前矿物PVT状态方程的研究主要集中在氧化物矿物和上地幔主要矿物（橄榄石和辉石）及其高压相（瓦兹利石、林伍德石、方镁铁矿、Majorite、Mg-Perovskite、Ca-Perovskite）的研究上，对石榴石、尖晶石等地幔常见副矿物和硫化物矿物的PVT状态方程的研究很少。 作者在参与搭建并完善金刚石压腔外加温系统的基础上，利用北京同步辐射X射线衍射实验技术结合金刚石压腔外加温技术对天然铁铝榴石、锰铝榴石、铬尖晶石进行了PVT状态方程的研究，同时对闪锌矿、辰砂、方铅矿、辉钼矿、辉锑矿等硫化物矿物进行了相变及状态方程的研究。结合前人研究成果，讨论了类质同象置换对镁铝－铁铝系列石榴石、锰铝－铁铝系列石榴石、尖晶石和硫化物矿物相变及状态方程的影响。获得了以下研究结果： 1）镁铝－铁铝系列石榴石和锰铝－铁铝系列石榴石的体弹模量都随着铁铝榴石组分的增加而增大。其主要原因是在二价阳离子位置上Fe2+取代了Mg2+、Mn2+。在镁铝－铁铝榴石系列中Mg2+的共价键半径（1.36Å）要大于Fe2+的共价键半径（1.17Å），而Mg2+－O键长（2.270Å）与铁铝榴石中的Fe2+－O（2.299Å）键长基本相当。在锰铝－铁铝榴石系列中， 尽管Mn2+的共价键半径（1.17Å）与铁铝榴石中的Fe2+共价键半径（1.17Å）相等，但是Mn2+－O键长（2.326Å）大于Fe2+－O键长（2.299Å）。较小的键长和共价键半径将会增强离子间的结合力，从而具有较强的抗压缩能力，因此随铁铝榴石组分的增加，镁铝－铁铝榴石系列和锰铝－铁铝榴石系列具有较大的体弹模量。 2）首次获得了铬尖晶石（(Mg0.6766Fe0.2808Na0.0073Ti0.0014)0.9661(Cr1.4874Al0.5367)2.0241O4）的体弹模量的温度导数。结合前人关于其他组分尖晶石的实验结果发现，尖晶石中在四面体位置上发生Fe2+－Mg2+置换对体弹模量的影响要大于在八面体位置上发生Cr3+－Al3+置换对体弹模量的影响。而造成铬尖晶石的体弹模量值比其他组分尖晶石的体弹模量值大的主要原因也是四面体位置上的Fe2+－Mg2+的类质置换。 3）依据获得的尖晶石和石榴石的状态方程计算了不同地幔岩模型（橄榄岩和榴辉岩模型）的密度值在上地幔温压条件下的变化情况。结果表明，在尖晶石二辉橄榄岩模型中尖晶石含量的改变（2％－10％）会引起较大的密度变化（2.2％）；在石榴石二辉橄榄岩（石榴石含量14％－20％）和榴辉岩（石榴石含量37％－45％）模型中石榴石含量的变化几乎未引起其密度值的变化，但石榴石是这两种地幔岩模型中的重要组成矿物。 4）首次获得了辰砂的Cinnabar相、方铅矿的B33相、辉钼矿、辉锑矿体弹模量的温度导数和热膨胀系数。讨论了闪锌矿、辰砂、方铅矿的相变情况。 5）总结了锌的、汞的、铅的硫族化合物发生结构相变的规律。认为造成锌的、汞的、铅的硫族化合物的相变压力随阴离子原子序数的增加（S→Se→Te）而逐渐减小的原因是：元素周期表中相对较大原子序数的原子具有更多的核内电子，引起价电子及导带电子的有效位能相对变弱，引起电离能降低，因此在相对较低的压力下就容易发生结构相变。 6）分析了ZnS中Fe2+替代Zn2+、Sb2S3－Bi2S3、MoS2－WS2以及同族相同结构不同组分的简单硫化物矿物的阴、阳离子对体弹模量值的影响。认为简单硫化物矿物的体弹模量值取决于阴、阳离子的离子半径、电负性以及键长。

Preparação e caracterização de semicondutores de PbS e 'B IND. I 'IND. 2' 'S IND. 3' obtidos pelo método de deposição em banho químico

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Präparation von Bismutsulfid-Absorberschichten für Dünnschichtsolarzellen mittels physikalischer Gasphasenabscheidung

Angesichts der sich abzeichnenden Erschöpfung fossiler Ressourcen ist die Erforschung alternativer Energiequellen derzeit eines der meistbeachteten Forschungsgebiete. Durch ihr enormes Potential ist die Photovoltaik besonders im Fokus der Wissenschaft. Um großflächige Beschichtungsverfahren nutzen zu können, wird seit einigen Jahren auf dem Gebiet der Dünnschichtphotovoltaik intensiv geforscht. Jedoch sind die gegenwärtigen Solarzellenkonzepte allesamt durch die Verwendung giftiger (Cd, As) oder seltener Elemente (In, Ga) oder durch eine komplexe Phasenbildung in ihrem Potential beschränkt. Die Entwicklung alternativer Konzepte erscheint daher naheliegend.rnAufgrund dessen wurde in einem BMBF-geförderten Verbundprojekt die Abscheidung von Dünnschichten des binären Halbleiters Bi2S3 mittels physikalischer Gasphasenabscheidung mit dem Ziel der Etablierung als quasi-intrinsischer Absorber in Solarzellenstrukturen mit p-i-n-Schichtfolge hin untersucht.rnDurch sein von einem hochgradig anisotropen Bindungscharakter geprägtes Kristallwachstum war die Abscheidung glatter, einphasiger und für die Integration in eine Multischichtstruktur geeigneter Schichten mit Schichtdicken von einigen 100 nm eine der wichtigsten Herausforderungen. Die Auswirkungen der beiden Parameter Abscheidungstemperatur und Stöchiometrie wurden hinsichtlich ihrer Auswirkungen auf die relevanten Kenngrößen (wie Morphologie, Dotierungsdichte und Photolumineszenz) untersucht. Es gelang, erfolgreich polykristalline Schichten mit geeigneter Rauigkeit und einer Dotierungsdichte von n ≈ 2 1015cm-3 auf anwendungsrelevanten Substraten abzuscheiden, wobei eine besonders starke Abhängigkeit von der Gasphasenzusammensetzung ermittelt werden. Es konnten weiterhin die ersten Messungen der elektronischen Zustandsdichte unter Verwendung von Hochenergie-Photoemissionsspektroskopie durchgeführt werden, die insbesondere den Einfluss variabler Materialzusammensetzungen offenbarten.rnZum Nachweis der Eignung des Materials als Absorberschicht standen innerhalb des Projektes mit SnS, Cu2O und PbS prinzipiell geeignete p-Kontaktmaterialien zur Verfügung. Es konnten trotz der Verwendung besonders sauberer Abscheidungsmethoden im Vakuum keine funktionstüchtigen Solarzellen mit Bi2S3 deponiert werden. Jedoch war es unter Verwendung von Photoemissionspektroskopie möglich, die relevanten Grenzflächen zu spektroskopieren und die Ursachen für die Beobachtungen zu identifizieren. Zudem konnte erfolgreich die Notwendigkeit von Puffermaterialien bei der Bi2S3-Abscheidung nachgewiesen werden, um Oberflächenreaktionen zu unterbinden und die Transporteigenschaften an der Grenzfläche zu verbessern.rn

Preparación y caracterización de películas delgadas de Cu3BiS3 con potencial aplicación en celdas solares

Propósito y Método de Estudio: El despliegue a gran escala de la energía fotovoltaica se está convirtiendo cada vez en un aspecto más importante. Las tecnologías actuales que utilizan elementos raros como el indio y el galio es improbable que sean capaces de satisfacer la creciente demanda de celdas solares de película delgada. Las películas de Cu3BiS3 formadas por depósito por baño químico exhiben alta absorbancia óptica en la región visible y una conductividad de tipo “p”. Contribuciones y Conclusiones: Se depositaron películas delgadas de Cu3BiS3 sobre sustratos de vidrio por el método de CBD aplicando tratamiento térmico durante 1.5 h a vacío a capas de Bi2S3-CuS. Los espesores logrados fueron desde 170 nm hasta 450 nm. El análisis por difracción de rayos X confirmó la formación del material Cu3BiS3. Las películas con espesor de 170 nm presentan bajos %T y %R, estos porcentajes disminuyen al aumentar el espesor de la película a 450 nm. Se obtuvieron valores de Eg = 1.65 y 1.0 eV para las películas de 170 y 450 nm, respectivamente. Así mismo fue calculada la conductividad del material obteniendo valores de 2.58 y 1.01 (Ω-cm)-1. Se logró la incorporación del material Cu3BiS3 en estructuras de celdas solares obteniendo adherencia sobre las capas anteriores. Las celdas solares desarrolladas presentaron valores de Jsc= 0.26 y 0.02 (mA/cm2) y V = 130 y 1.45 mV para las películas de 170 y 450 nm respectivamente.

ESTUDIO ESTRUCTURAL DE SEMICONDUCTORES USADOS EN APLICACIONES FOTOVOLTAICAS

Se presenta un estudio de las propiedades estructurales de los semiconductores Bi2S3, SnS, SnS2, SnS:Bi, Cu3BiS3 y Cu(In,Ga)Se2 (CIGS) usados como capa absorbente en dispositivos optoelectrónicos. Todas las muestras fueron crecidas por procesos de co-evaporación de sus especies metálicas sobre sustratos de vidrio. El efecto de las condiciones de preparación sobre las propiedades estructurales y composición química han sido analizados y obtenidos a partir de difracción de rayos-X (XRD) y espectroscopia de electrones Auger (AES). Los resultados revelan que todos los compuestos crecen con estructura ortorrómbica, a diferencia del SnS2 y el CIGS, que crecen con estructura hexagonal y tetragonal, respectivamente. Los resultados composicionales revelaron que a partir de la deconvolución de sus picos se encontraron fases asociadas a Cu2Se y In2Se3

Procesos hopping a través del modelo difusional en materiales nanocristalinos usados para aplicaciones fotovoltaicas

Se presentan los modelos de hopping de rango variable (variable range hopping; VRH), vecinos cercanos (nearest neighbor hopping; NNH) y barreras de potencial presentes en las fronteras de grano; como mecanismos de transporte eléctrico predominantes en los materiales semiconductores para aplicaciones fotovoltaicas. Las medidas de conductividad a oscuras en función de temperatura fueron realizadas para región de bajas temperaturas entre 120 y 400 K con Si y compuestos Cu3BiS2 y Cu2ZnSnSe4. Siguiendo la teoría de percolación, se obtuvieron parámetros hopping y la densidad de estados cerca del nivel de Fermi, N(EF), para todas las muestras. A partir de los planteamientos dados por Mott para VRH, se presentó el modelo difusional, que permitió establecer la relación entre la conductividad y la densidad de estados de defecto o estados localizados en el gap del material. El análisis comparativo entre modelos, evidenció, que es posible obtener mejora hasta de un orden de magnitud en valores para cada uno de los parámetros hopping que caracterizan el material.