999 resultados para Ballistic magneto-resistance


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Ab initio quantum transport calculations show that short NiO chains suspended in Ni nanocontacts present a very strong spin-polarization of the conductance.The generalized gradient approximation we use here predicts a similar polarization of the conductance as the one previously computed with non-local exchange, confirming the robustness of the result. Their use as nanoscopic spinvalves is proposed.

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Poster presented in TNT 2005 "Trends in Nanotechnology", Oviedo, Spain, 29 August-02 September, 2005.

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We present magnetotransport studies of high-density triple quantum well samples with different barrier widths. Because of electron transitions between three occupied 2D subbands, the magneto-resistance shows magneto-intersubband oscillations whose periodicity is determined by the subband separation energies. Temperature-dependent measurements allow us to extract quantum lifetime of electrons. A theoretical consideration of the observed phenomenon is also presented. (C) 2009 Elsevier B.V. All rights reserved.

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Esta tese tem por objectivo o desenho e avaliação de um sistema de contagem e classificação de veículos automóveis em tempo-real e sem fios. Pretende, também, ser uma alternativa aos actuais equipamentos, muito intrusivos nas vias rodoviárias. Esta tese inclui um estudo sobre as comunicações sem fios adequadas a uma rede de equipamentos sensores rodoviários, um estudo sobre a utilização do campo magnético como meio físico de detecção e contagem de veículos e um estudo sobre a autonomia energética dos equipamentos inseridos na via, com recurso, entre outros, à energia solar. O projecto realizado no âmbito desta tese incorpora, entre outros, a digitalização em tempo real da assinatura magnética deixada pela passagem de um veículo, no campo magnético da Terra, o respectivo envio para servidor via rádio e WAN, Wide Area Network, e o desenvolvimento de software tendo por base a pilha de protocolos ZigBee. Foram desenvolvidas aplicações para o equipamento sensor, para o coordenador, para o painel de controlo e para a biblioteca de Interface de um futuro servidor aplicacional. O software desenvolvido para o equipamento sensor incorpora ciclos de detecção e digitalização, com pausas de adormecimento de baixo consumo, e a activação das comunicações rádio durante a fase de envio, assegurando assim uma estratégia de poupança energética. Os resultados obtidos confirmam a viabilidade desta tecnologia para a detecção e contagem de veículos, assim como para a captura de assinatura usando magnetoresistências. Permitiram ainda verificar o alcance das comunicações sem fios com equipamento sensor embebido no asfalto e confirmar o modelo de cálculo da superfície do painel solar bem como o modelo de consumo energético do equipamento sensor.

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This thesis lays importance in the investigation on the multiferroic and thermooelectric properties of selected representatives of low bandwidth and intermediate band width manganites. The first candidate, Strontium doped Gd manganite, is prepared by wet solid state reaction method and the second candidate, Na doped La manganite, by citrate gel method. In addition to the above mentioned properties, magneto resistance and dielectric properties are investigated. Using dielectric spectroscopic the dispersion parameters are correlated to the relaxation mechanisms and an attempt is made to obtain the grain and grain boundary contribution to the impedance of the sample through impedance spectroscopy studies.

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Materials belonging to the family of manganites are technologically important since they exhibit colossal magneto resistance. A proper understanding of the transport properties is very vital in tailoring the properties. A heavy rare earth doped manganite like Gd0·7Sr0·3MnO3 is purported to be exhibiting unusual properties because of smaller ionic radius of Gd. Gd0·7Sr0·3MnO3 is prepared by a wet solid state reaction method. The conduction mechanism in such a compound has been elucidated by subjecting the material to low temperature d.c. conductivity measurement. It has been found that the low band width material follows a variable range hopping (VRH) model followed by a small polaron hopping (SPH) model. The results are presented here

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Here we present the results of magneto resistance measurements in tilted magnetic field and compare them with calculations. The comparison between calculated and measured spectra for the case of perpendicular fields enable us to estimate the dependence of the valley splitting as a function of the magnetic field and the total Lande g-factor (which is assumed to be independent of the magnetic field). Since both the exchange contribution to the Zeeman splitting as well as the valley splitting are properties associated with the 2D quantum confinement, they depend only on the perpendicular component of the magnetic field, while the bare Zeeman splitting depends on the total magnetic field. This information aided by the comparison between experimental and calculated gray scale maps permits to obtain separately the values of the exchange and the bare contribution to the g-factor.

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We have measured the effect of an applied magnetic field on the current through thin films of two different organic conjugated polymers that have previously shown to exhibit magnetoresistance, poly(9,9-dioctyl-1,4-fluorenylenevinylene) and poly(9,9-dioctyl-2,7-fluorenylenevinylene). The results show that the magnetic field releases trapped charges from inside the material and enhances the current. We have also performed optical absorption experiments on these polymer films under applied voltage and magnetic field. The results show that the magnetic field produces a change in the optical absorption in the low-energy range associated with deep traps and only under conditions when these traps are likely charged. These two results provide a strong case for the release of trapped charges caused by the magnetic field as being the cause of the magneto resistance in these polymers and possibly in other organic materials where magnetoresistance was recently observed. (c) 2007 Elsevier B.V. All rights reserved.

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It is reported superconductivity in Nb5Ge3C0.3, an interstitial carbide compound. The temperature dependence of the electrical resistivity, ac-susceptibility, and heat capacity (HC) indicate that a bulk type-II superconductivity appears at T-C - 15.3 K. Magneto-resistance measurements suggest an upper critical field of B-C2 similar to 10.6 T and a coherence length of xi similar to 55 angstrom at zero temperature. Neutron diffraction analyzes locate the carbon atoms at the interstitial 2b site of the Mn5Si3 type-structure. Heat capacity data below T-C are well described by BCS theory. The size of the jump at T-C is in good agreement with the superconducting volume fraction observed in susceptibility measurements. A Debye temperature and Sommerfeld constant were also extracted from heat capacity data as 343 K and 34 mJ/mol K-2, respectively. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4730611]

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Ziel dieser Arbeit ist die Bestimmung der Spinpolarisation von der Heusler-Verbindung Co2Cr0,6Fe0,4Al. Dieses Ziel wurde durch die sorgfältige Präparation von Co2Cr0,6Fe0,4Al basierten Tunnelkontakten realisiert. Tunnelwiderstandsmessungen an Co2Cr0,6Fe0,4Al-basiertenrnTunnelkontakten ergaben einen Tunnelmagnetowiderstand von 101% bei 4 K. DieserrnTunnelmagnetowiderstand legt eine untere Grenze von 67% für die Spinpolarisation von Co2Cr0,6Fe0,4Al fest.rnrnCo2Cr0,6Fe0,4Al ist eine Heusler-Verbindung, der die Eigenschaften eines halbmetallischen Ferromagneten zugeschrieben werden. Ein halbmetallischer Ferromagnet hat an der Fermikante nur Elektronenspinzustände mit einer Polarisation. Als Folge davon können bei einem spinerhaltenden Tunnelprozess nur Elektronen einer Spinrichtung in den halbmetallischen Ferromagneten tunneln. Mit einem magnetischen Feld und einer durch einen Antiferromagneten fixierten Gegenelektrode, können an einem Tunnelkontakt mit einem spinpolarisierten Ferromagneten deshalb zwei Zustände, eine hohe und eine niedrige Tunnelleitfähigkeit, erzeugt werden. Daher finden spinpolarisierte Tunnelkontakte in Form von MRAM in der Datenspeicherung Verwendung. Bislang wurde jedoch keine Verbindung gefunden, der eine Spinpolarisation von 100% experimentell eindeutig nachgewiesen werden konnte. Für Co2Cr0,6Fe0,4Al lagen die höchsten gemessenen Spinpolarisationen um 50%.rnrnTunnelspektroskopie ist eine zuverlässige und anwendungsnahe Methode zur Untersuchung der Spinpolarisation. Inelastische Tunnelprozesse und eine reduzierte Ordnung an Grenzflächen bewirken einen reduzierten Tunnelmagnetowiderstand. Eine symmetriebrechende Barriere, wie amorphes AlOx, ist Voraussetzung für die Anwendung des Jullière-Modells zur Bestimmung der Spinpolarisation. Das Jullière-Modell verknüpft die Spin-aufgespaltenenrnZustandsdichten der Elektroden mit dem Tunnelmagnetowiderstand. Ohne einernsymmetriebrechende Barriere, zum Beispiel mit MgO als Isolatorschicht, können höhere Tunnelmagnetowiderstände erzwungen werden. Ein eindeutiger Rückschluss auf die Spinpolarisation ist dann jedoch nicht mehr möglich. Mit Aluminiumoxid-basierten Barrieren liefert die Anwendung des einfachen Jullière-Modells eine Untergrenze der Spinpolarisation.rnrnUm die Spinpolarisation von Co2Cr0,6Fe0,4Al durch Tunnelspektroskopie zu bestimmen, musste die Präparation der Tunnelkontakte verbessert werden. Dies wurde ermöglicht durch den Anbau einer neuen Sputterkammer mit besseren UHV-Bedingungen an ein bestehendes Präparationscluster. Co2Cr0,6Fe0,4Al wird mit Hilfe von Radiofrequenz-Kathodenzerstäuben deponiert. Die resultierenden Schichten verfügen nach ihrer Deposition über einen höheren Ordnungsgrad und über eine geordnete Oberfläche. Durch eine Magnesium-Pufferschicht war es möglich, auf diese Oberfläche eine homogene amorphe AlOx-Barriere zu deponieren. Als Gegenelektrode wurde CoFe als Ferromagnet mit MnFe als Antiferromagnet gewählt. Diese Gegenelektrode ermöglicht Tunnelmessungen bis hin zu Raumtemperatur.rnrnMit den in dieser Arbeit vorgestellten optimierten Analyse- und Präparationsmethoden ist es möglich, die Untergrenze der Spinpolarisation von Co2Cr0,6Fe0,4Al auf 67% anzuheben. Dies ist der bisher höchste veröffentlichte Wert der Spinpolarisation von Co2Cr0,6Fe0,4Al.rn

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The mixing of nanoparticles with polymers to form composite materials has been applied for decades. They combine the advantages of polymers (e.g., elasticity, transparency, or dielectric properties) and inorganic nanoparticles (e.g., specific absorption of light, magneto resistance effects, chemical activity, and catalysis etc.). Nanocomposites exhibit several new characters that single-phase materials do not have. Filling the polymeric matrix with an inorganic material requires its homogeneous distribution in order to achieve the highest possible synergetic effect. To fulfill this requirement, the incompatibility between the filler and the matrix, originating from their opposite polarity, has to be resolved. A very important parameter here is the strength and irreversibility of the adsorption of the surface active compound on the inorganic material. In this work the Isothermal titration calorimetry (ITC) was applied as a method to quantify and investigate the adsorption process and binding efficiencies in organic-inorganic–hybrid-systems by determining the thermodynamic parameters (ΔH, ΔS, ΔG, KB as well as the stoichiometry n). These values provide quantification and detailed understanding of the adsorption process of surface active molecules onto inorganic particles. In this way, a direct correlation between the adsorption strength and structure of the surface active compounds can be achieved. Above all, knowledge of the adsorption mechanism in combination with the structure should facilitate a more rational design into the mainly empirically based production and optimization of nanocomposites.

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Recently nanoscale junctions consisting of 0-D nanostructures (single molecule) or 1-D nanostructures (semiconducting nanowire) sandwiched between two metal electrodes are successfully fabricated and characterized. What lacks in the recent developments is the understanding of the mechanism behind the observed phenomena at the level of atoms and electrons. For example, the origin of observed switching effect in a semiconducting nanowire due to the influence of an external gate bias is not yet understood at the electronic structure level. On the same context, different experimental groups have reported different signs in tunneling magneto-resistance for the same organic spin valve structure, which has baffled researchers working in this field. In this thesis, we present the answers to some of these subtle questions by investigating the charge and spin transport in different nanoscale junctions. A parameter-free, single particle Green’s function approach in conjunction with a posteriori density functional theory (DFT) involving a hybrid orbital dependent functional is used to calculate the tunneling current in the coherent transport limit. The effect of spin polarization is explicitly incorporated to investigate spin transport in a nanoscale junction. Through the electron transport studies in PbS nanowire junction, a new orbital controlled mechanism behind the switching of the current is proposed. It can explain the switching behavior, not only in PbS nanowire, but in other lead-chalcogenide nanowires as well. Beside this, the electronic structure properties of this nanowire are studied using periodic DFT. The quantum confinement effect was investigated by calculating the bandgap of PbS nanowires with different diameters. Subsequently, we explain an observed semiconducting to metallic phase transition of this nanowire by calculating the bandgap of the nanowire under uniform radial strain. The compressive radial strain on the nanowire was found to be responsible for the metallic to semiconducting phase transition. Apart from studying one dimensional nanostructure, we also present transport properties in zero dimensional single molecular junctions. We proposed a new codoping approach in a single molecular carborane junction, where a cation and an anion are simultaneously doped to find the role of a single atom in the device. The main purpose was to build a molecular junction where a single atom can dictate the flow of electrons in a circuit. Recent observations of both positive and negative sign in tunneling magnetoresistance (TMR) the using same organic spin-valve structure hasmystified researchers. From our spin dependent transport studies in a prototypical organic molecular tunneling device, we found that a 3% change in metal-molecule interfacial distance can alter the sign of TMR. Changing the interfacial distance by 3%, the number of participating eigenstates as well as their orbital characteristic changes for anti-parallel configuration of the magnetization at the two electrodes, leading to the sign reversal of the TMR. Apart from this, the magnetic proximity effect under applied bias is investigated quantitatively, which can be used to understand the observed unexpectedmagnetismin carbon basedmaterials when they are in close proximity with magnetic substrates.

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Thermoelectric materials are revisited for various applications including power generation. The direct conversion of temperature differences into electric voltage and vice versa is known as thermoelectric effect. Possible applications of thermoelectric materials are in eco-friendly refrigeration, electric power generation from waste heat, infrared sensors, temperature controlled-seats and portable picnic coolers. Thermoelectric materials are also extensively researched upon as an alternative to compression based refrigeration. This utilizes the principle of Peltier cooling. The performance characteristic of a thermoelectric material, termed as figure of merit (ZT) is a function of several transport coefficients such as electrical conductivity (σ), thermal conductivity (κ) and Seebeck coefficient of the material (S). ZT is expressed asκσTZTS2=, where T is the temperature in degree absolute. A large value of Seebeck coefficient, high electrical conductivity and low thermal conductivity are necessary to realize a high performance thermoelectric material. The best known thermoelectric materials are phonon-glass electron – crystal (PGEC) system where the phonons are scattered within the unit cell by the rattling structure and electrons are scattered less as in crystals to obtain a high electrical conductivity. A survey of literature reveals that correlated semiconductors and Kondo insulators containing rare earth or transition metal ions are found to be potential thermoelectric materials. The structural magnetic and charge transport properties in manganese oxides having the general formula of RE1−xAExMnO3 (RE = rare earth, AE= Ca, Sr, Ba) are solely determined by the mixed valence (3+/4+) state of Mn ions. In strongly correlated electron systems, magnetism and charge transport properties are strongly correlated. Within the area of strongly correlated electron systems the study of manganese oxides, widely known as manganites exhibit unique magneto electric transport properties, is an active area of research.Strongly correlated systems like perovskite manganites, characterized by their narrow localized band and hoping conduction, were found to be good candidates for thermoelectric applications. Manganites represent a highly correlated electron system and exhibit a variety of phenomena such as charge, orbital and magnetic ordering, colossal magneto resistance and Jahn-Teller effect. The strong inter-dependence between the magnetic order parameters and the transport coefficients in manganites has generated much research interest in the thermoelectric properties of manganites. Here, large thermal motion or rattling of rare earth atoms with localized magnetic moments is believed to be responsible for low thermal conductivity of these compounds. The 4f levels in these compounds, lying near the Fermi energy, create large density of states at the Fermi level and hence they are likely to exhibit a fairly large value of Seebeck coefficient.

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We observe zero-differential resistance states at low temperatures and moderate direct currents in a bilayer electron system formed by a wide quantum well. Several regions of vanishing resistance evolve from the inverted peaks of magneto-intersubband oscillations as the current increases. The experiment, supported by a theoretical analysis, suggests that the origin of this phenomenon is based on instability of homogeneous current flow under conditions of negative differential resistivity, which leads to formation of current domains in our sample, similar to the case of single-layer systems.

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We theoretically investigate negative differential resistance (NDR) for ballistic transport in semiconducting armchair graphene nanoribbon (aGNR) superlattices (5 to 20 barriers) at low bias voltages V(SD) < 500 mV. We combine the graphene Dirac Hamiltonian with the Landauer-Buttiker formalism to calculate the current I(SD) through the system. We find three distinct transport regimes in which NDR occurs: (i) a ""classical"" regime for wide layers, through which the transport across band gaps is strongly suppressed, leading to alternating regions of nearly unity and zero transmission probabilities as a function of V(SD) due to crossing of band gaps from different layers; (ii) a quantum regime dominated by superlattice miniband conduction, with current suppression arising from the misalignment of miniband states with increasing V(SD); and (iii) a Wannier-Stark ladder regime with current peaks occurring at the crossings of Wannier-Stark rungs from distinct ladders. We observe NDR at voltage biases as low as 10 mV with a high current density, making the aGNR superlattices attractive for device applications.