Structural, optical, and electrical properties of bulk single crystals of InAsxSb(1-x) grown by rotatory Bridgman method

Radially-homogeneous and single-phase InAsxSb(1−x) crystals, up to 5.0 at. % As concentration, have been grown using the rotatory Bridgman method. Single crystallinity has been confirmed by x-ray and electron diffraction studies. Infrared transmission spectra show a continuous decrease in optical energy gap with the increase of arsenic content in InSb. The measured values of mobility and carrier density at room temperature (for x = .05) are 5.6×104 cm2/V s and 2.04×1016 cm−3, respectively.

Growth of InSb(1-x)Bix crystals by Rotatary Bridgman method and their characterization

The Rotatary Bridgman method was used to grow ternary InSb(1-x)SBix, crystals. In this method the ampoule was subjected to reversible rotation at a rate of 60rpm. High quality crystals of 8mm diameter and 25mm length were grown with 6.5 atomic percentage of Bi. The grown crystals were characterized employing various techniques such as energy dispersive spectroscopy, x-ray diffraction, differential scanning calorimetery, infrared spectroscopy and Hall measurement.

Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions

A GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemical etching method. By calculating various parameters of the convection, the striation patterns can be explained, and the critical value of the Taylor number, which characterizes the convective condition of the rotating magnetic field induced azimuthal flow, was shown. The stresses generated during crystal growth can be reflected by the observations of etch pit distribution and other structural defects. Suggestions for improving the space experiment to improve the quality of the crystal are given.

TlBr raw material purification, crystal growth, annealing, detector fabrication and characterisation for gamma-ray detector applications

The research reported in this thesis dealt with single crystals of thallium bromide grown for gamma-ray detector applications. The crystals were used to fabricate room temperature gamma-ray detectors. Routinely produced TlBr detectors often are poor quality. Therefore, this study concentrated on developing the manufacturing processes for TlBr detectors and methods of characterisation that can be used for optimisation of TlBr purity and crystal quality. The processes under concern were TlBr raw material purification, crystal growth, annealing and detector fabrication. The study focused on single crystals of TlBr grown from material purified by a hydrothermal recrystallisation method. In addition, hydrothermal conditions for synthesis, recrystallisation, crystal growth and annealing of TlBr crystals were examined. The final manufacturing process presented in this thesis deals with TlBr material purified by the Bridgman method. Then, material is hydrothermally recrystallised in pure water. A travelling molten zone (TMZ) method is used for additional purification of the recrystallised product and then for the final crystal growth. Subsequent processing is similar to that described in the literature. In this thesis, literature on improving quality of TlBr material/crystal and detector performance is reviewed. Aging aspects as well as the influence of different factors (temperature, time, electrode material and so on) on detector stability are considered and examined. The results of the process development are summarised and discussed. This thesis shows the considerable improvement in the charge carrier properties of a detector due to additional purification by hydrothermal recrystallisation. As an example, a thick (4 mm) TlBr detector produced by the process was fabricated and found to operate successfully in gamma-ray detection, confirming the validity of the proposed purification and technological steps. However, for the complete improvement of detector performance, further developments in crystal growth are required. The detector manufacturing process was optimized by characterisation of material and crystals using methods such as X-ray diffraction (XRD), polarisation microscopy, high-resolution inductively coupled plasma mass (HR-ICPM), Fourier transform infrared (FTIR), ultraviolet and visual (UV-Vis) spectroscopy, field emission scanning electron microscope (FESEM) and energy-dispersive X-ray spectroscopy (EDS), current-voltage (I-V) and capacity voltage (CV) characterisation, and photoconductivity, as well direct detector examination.

Magneto-transport and optical properties of diluted magnetic semiconductor Ga1-xMnxSb

We have studied magneto-transport and optical properties of Ga1-xMnxSb crystals (x = 0.01, 0.02, 0.03 and 0.04) grown by horizontal Bridgman method. Negative magnetoresistance and anomalous Hall effect have been observed below 10K. Temperature dependence of magnetization measurement shows a magnetic ordering below 10K which could arise from Ga1-xMnxSb alloy formation. Also, saturation in magnetization observed even at room temperature suggests the existence of ferromagnetic MnSb clusters. Reduction in band gap is observed with increasing Mn concentration in the crystals. Temperature dependence of band gap follows Bose-Einstein's model.

Optical absorption and photoluminescence studies on heavily doped (Ga,Mn)Sb crystals

Ga1-xMnxSb crystals are grown with different Mn doping concentrations by the horizontal Bridgman method (x = 0 - 0.04). Optical absorption and photoluminescence studies are carried out in the temperature range 3-300 K. Optical absorption studies reveal that the inter-valence band transition from the spin-orbit split-off band to the light/heavy hole bands is dominant over the fundamental valence band to conduction band absorption. In higher doped crystals, the fundamental absorption peak is merged with the inter-valence band transition and could not be resolved. Photoluminescence measurements in heavily doped crystals reveal the band gap narrowing and band filling effects due to the Fermi level shifting into the valence band.

Magnetism and superconductivity in Sb-doped binary and ternary iron chalcogenide single crystals

We report the single crystal growth of antimony doped Fe1+yTe and Fe1+yTe0.5Se0.5 (Fe1+ySbxTe1-x (x=0, 2%, 5%) and Fe1+yTe0.49Se0.49Sb0.02) by a modified horizontal Bridgman method. Growth parameters are optimized to obtain high quality single crystals. The antiferromagnetic (AFM) transition at T-N = 62.2 K which is a first order transition, shifts to lower temperature on doping in Fe1+yTe. Alternately when the chalcogen site of the ternary compound Fe1+yTe0.5Se0.5 is doped with Sb, superconductivity is preserved albeit the superconducting transition temperature (T-C) falls slightly and a concomitant reduction occurs in superconducting volume fraction. (C) 2013 Elsevier B.V. All rights reserved,

Antiferromagnetism in Fe1+y Te and Superconductivity in K (x) Fe2Se2

Iron-based layered chalcogenides are interesting because of their structural magnetic and superconducting properties. Single crystals of the parent binary chalcogenides, Fe1+y Te, and intercalated ternary chalcogenides, K0.8Fe2Se2, are grown and investigated in detail. Single crystals are grown by modified horizontal Bridgman method. Fe1+y Te demonstrates an antiferromagnetic (AFM) transition at T (N) =67 K which is identified as a magnetostructural transition. By varying the concentration of excess Fe, we have tuned T (N) over a range of temperature from 67 to 57 K. The superconducting properties of K0.8Fe2Se2 crystals are explored by magnetization measurements. A superconducting transition is observed at T (C) =31 K. The lower critical field of K0.8Fe2Se2 is estimated from field variation of magnetization measurements.

Growth and vibrational spectra of doped KMgF3 single crystal

The different ions doped KMgF3 single crystals are prepared by the vertical Bridgman method. The near-infrared absorption spectra for different parts of all as-growth crystals indicate that there is the best transparency in middle part. The correlation between the vibronic frequencies of Eu2+ and the site displacement of Cu+ co-doped ions is firstly studied, which indicates that Cu+ ions replace the site of the Mg2+ ions. The co-doped Eu2+ counteracts the charge misfit causing by the replacement of Mg2+ with Cu+. The overlapping of the emission spectra of the Eu2+ and the excitation spectra of the Cu+ results in the energy transfer from Eu2+ to Cu+.

Optical and scintillation properties of CsBa2I5:Eu2+

The scintillation and luminescence properties of pure CsBa2I5 and CsBa2I5 doped with 0.5% Eu and 5% Eu were studied between 78 K and 600 K. Single crystals were grown by the vertical Bridgman method from the melt. CsBa2I5:5% Eu showed a light yield of 80,000 photons/MeV, an energy resolution of 2.3% for the 662 key full absorption peak, and an excellent proportional response. Two broad emission bands centered at 400 nm and 600 nm were observed in the radioluminescence spectrum of pure CsBa2I5. The Eu2+ 5d-4f emission band was observed at 430 nm. The radiative lifetime of the Eu2+ excited state was determined as 350 ns. With increasing temperature and Eu concentration the Eu2+ emission shifts to longer wavelengths and its decay time lengthens as a result of self-absorption of the Eu2+ emission. Multiple thermoluminescence glow peaks and a sharp decrease of the light yield at temperatures below 200 K were observed and related to the presence of the charge carrier traps in CsBa2I5:Eu.

Laüe back-reflection method for crystallographic orientation of a martensitic Cu-Zn-Al single crystal of the monoclinic system

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

An approximate method for the solution of an influence function foil rolling model

Fleck and Johnson (Int. J. Mech. Sci. 29 (1987) 507) and Fleck et al. (Proc. Inst. Mech. Eng. 206 (1992) 119) have developed foil rolling models which allow for large deformations in the roll profile, including the possibility that the rolls flatten completely. However, these models require computationally expensive iterative solution techniques. A new approach to the approximate solution of the Fleck et al. (1992) Influence Function Model has been developed using both analytic and approximation techniques. The numerical difficulties arising from solving an integral equation in the flattened region have been reduced by applying an Inverse Hilbert Transform to get an analytic expression for the pressure. The method described in this paper is applicable to cases where there is or there is not a flat region.