Development and Automatization of a Planar Jet Wind Tunnel for the X-wire Calibration

The scope of this study is to design an automatic control system and create an automatic x-wire calibrator for a facility named Plane Air Tunnel; whose exit creates planar jet flow. The controlling power state as well as automatic speed adjustment of the inverter has been achieved. Thus, the wind tunnel can be run with respect to any desired speed and the x-wire can automatically be calibrated at that speed. To achieve that, VI programming using the LabView environment was learned, to acquire the pressure and temperature, and to calculate the velocity based on the acquisition data thanks to a pitot-static tube. Furthermore, communication with the inverter to give the commands for power on/off and speed control was also done using the LabView VI coding environment. The connection of the computer to the inverter was achieved by the proper cabling using DAQmx Analog/Digital (A/D) input/output (I/O). Moreover, the pressure profile along the streamwise direction of the plane air tunnel was studied. Pressure tappings and a multichannel pressure scanner were used to acquire the pressure values at different locations. Thanks to that, the aerodynamic efficiency of the contraction ratio was observed, and the pressure behavior was related to the velocity at the exit section. Furthermore, the control of the speed was accomplished by implementing a closed-loop PI controller on the LabView environment with and without using a pitot-static tube thanks to the pressure behavior information. The responses of the two controllers were analyzed and commented on by giving suggestions. In addition, hot wire experiments were performed to calibrate automatically and investigate the velocity profile of a turbulent planar jet. To be able to analyze the results, the physics of turbulent planar jet flow was studied. The fundamental terms, the methods used in the derivation of the equations, velocity profile, shear stress behavior, and the effect of vorticity were reviewed.

Experimental characterization of a planar jet by hot-wire anemometry

The study of turbulence is also nowadays a problem that does not have solution from the mathematical point of view due to the lack of solution to link the mean part of the flow with the fluctuating one. To solve this problem, in the CICLoPE laboratory of Predappio, experiments on different type of jets are performed in order to derive a closure model able to close our mathematical model. One of the most interesting type of jet that could be studied is the planar turbulent free jet which is a two dimensional canonical jet characterized by the self-similarity condition of the velocity profiles. To study this particular jet, a new facility was built. The aim of this project is to characterize the jet at different distances from the nozzle exit, for different values of Reynolds number, to demonstrate that the self-similarity condition is respected. To do that, the evaluation of quantities such as spreading rate, centerline velocity decay and relation between fluctuations and mean part of the flow has to be obtain. All these parameters could be detected thanks to the use of single and X hot-wire anemometry with which it is possible to analyzed the fluctuating behaviour of the flow by associating to an electric signal a physical variable expressed in terms of velocity. To justify the data obtain by the measures, a comparison with results coming from the literature has to be shown.

DNS of a hot-wire anemometer in a turbulent channel flow

A body with a shape similar to a hot wire with its sheath, but no prongs, has been placed close to the wall of a turbulent channel at Re_tau = 600. The results of the channel flow, without the wire, agree with previous published ones, despite the modest resolution and domain size. A simplified, two-dimensional version of the wire at the same Reynolds number has been studied to compare the dynamic response of cold and hot wires, where a slightly bigger perturbation is seen in the hot case, but an almost identical dynamic response. The cold wire seems to be able to measure instantaneous velocity with total drag after proper calibration. Being a DNS, the complete description of the flow field around the wire is obtained.

Temperature measurements in turbulent pipe flow with cold wire anemometry

Passive scalars measurements in turbulent pipe flows are difficult to perform and only few experimental data are available in literature. The present thesis deals with the experimental acquisition and study of the first turbulent temperature profile inside the CICLoPE wind tunnel through cold wire anemometry technique at Reτ = 6000 and Reτ = 9500. This type of measurements provides not only useful data on temperature (and passive scalars) behaviour and statistics in turbulent pipe flows, but could be used also for temperature correction of turbulent velocity profiles. In the present work, subsequent acquisitions of temperature and velocity profiles has been performed at the same Reynolds number and in the same points, through cold wire and hot wire techniques respectively. Taking as reference data from both DNS and experimental campaigns, the activity has been carried out obtaining satisfactory results. We have verified the presence of turbulent temperature profile inside the CICLoPE wind tunnel and then studied its statistical and spectral behaviours obtaining results in agreement with existing data from Hishida, Nagano, and Ferro. Cold wire temperature data were then used to correct hot wire velocity data, obtaining a slightly improvement in the near wall region.

Effect of argon ion energy on the performance of silicon nitridemultilayer permeation barriers grown by hot-wire CVD on polymers

One of the authors (S.M.) acknowledges Direction des Relations Extérieures of Ecole Polytechnique for financial support.

Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD

In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated heterojunction solar cells. An infrared Nd:YAG laser (1064 nm) has been used to locally fire the aluminium through the thin amorphous silicon layers. Under optimized laser firing parameters, very low specific contact resistances (ρc ∼ 10 mΩ cm2) have been obtained on 2.8 Ω cm p-type c-Si wafers. This investigation focuses on maintaining the passivation quality of the interface without an excessive increase in the series resistance of the device.

Uniformity Study of Amorphous and Microcrystalline Silicon Thin Films Deposited on 10cmx10cm Glass Substrate using Hot Wire CVD Technique

The scaling up of the Hot Wire Chemical Vapor Deposition (HW-CVD) technique to large deposition area can be done using a catalytic net of equal spaced parallel filaments. The large area deposition limit is defined as the limit whenever a further increment of the catalytic net area does not affect the properties of the deposited film. This is the case when a dense catalytic net is spread on a surface considerably larger than that of the film substrate. To study this limit, a system able to hold a net of twelve wires covering a surface of about 20 cm x 20 cm was used to deposit amorphous (a-Si:H) and microcrystalline (μc-Si:H) silicon over a substrate of 10 cm x 10 cm placed at a filament-substrate distance ranging from 1 to 2 cm. The uniformity of the film thickness d and optical constants, n(x, λ) and α(x,¯hω), was studied via transmission measurements. The thin film uniformity as a function of the filament-substrate distance was studied. The experimental thickness profile was compared with the theoretical result obtained solving the diffusion equations. The optimization of the filament-substrate distance allowed obtaining films with inhomogeneities lower than ±2.5% and deposition rates higher than 1 nm/s and 4.5 nm/s for (μc-Si:H) and (a-Si:H), respectively.

Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate

Amorphous and nanocrystalline silicon films obtained by Hot-Wire Chemical Vapor Deposition have been incorporated as active layers in n-type coplanar top gate thin film transistors deposited on glass substrates covered with SiO 2. Amorphous silicon devices exhibited mobility values of 1.3 cm 2 V - 1 s - 1, which are very high taking into account the amorphous nature of the material. Nanocrystalline transistors presented mobility values as high as 11.5 cm 2 V - 1 s - 1 and resulted in low threshold voltage shift (∼ 0.5 V).

Thin silicon films ranging from amorphous to nanocrystalline obtained by Hot-Wire CVD

In this paper, we have presented results on silicon thin films deposited by hot-wire CVD at low substrate temperatures (200 °C). Films ranging from amorphous to nanocrystalline were obtained by varying the filament temperature from 1500 to 1800 °C. A crystalline fraction of 50% was obtained for the sample deposited at 1700 °C. The results obtained seemed to indicate that atomic hydrogen plays a leading role in the obtaining of nanocrystalline silicon. The optoelectronic properties of the amorphous material obtained in these conditions are slightly poorer than the ones observed in device-grade films grown by plasma-enhanced CVD due to a higher hydrogen incorporation (13%).

Optimisation of doped microcrystalline silicon films deposited at very low temperatures by Hot-Wire CVD

In this paper we present new results on doped μc-Si:H thin films deposited by hot-wire chemical vapour deposition (HWCVD) in the very low temperature range (125-275°C). The doped layers were obtained by the addition of diborane or phosphine in the gas phase during deposition. The incorporation of boron and phosphorus in the films and their influence on the crystalline fraction are studied by secondary ion mass spectrometry and Raman spectroscopy, respectively. Good electrical transport properties were obtained in this deposition regime, with best dark conductivities of 2.6 and 9.8 S cm -1 for the p- and n-doped films, respectively. The effect of the hydrogen dilution and the layer thickness on the electrical properties are also studied. Some technological conclusions referred to cross contamination could be deduced from the nominally undoped samples obtained in the same chamber after p- and n-type heavily doped layers.

Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200°C

In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a thin intrinsic hydrogenated amorphous silicon buffer layer (5 nm). The microstructure of these films has been studied by spectroscopic ellipsometry in the UV-visible range. These measurements reveal that the microstructure of the n-doped film is strongly influenced by the amorphous silicon buffer. The Quasy-Steady-State Photoconductance (QSS-PC) technique allows us to estimate implicit open-circuit voltages near 700 mV for heterojunction emitters on p-type (0.8 Ω·cm) FZ silicon wafers. Finally, 1 cm 2 heterojunction solar cells with 15.4% conversion efficiencies (total area) have been fabricated on flat p-type (14 Ω·cm) CZ silicon wafers with aluminum back-surface-field contact.

Investigation of defect formation and electronic transport in microcrystalline silicon deposited by hot-wire CVD

We have investigated doped and undoped layers of microcrystalline silicon prepared by hot-wire chemical vapour deposition optically, electrically and by means of transmission electron microscopy. Besides needle-like crystals grown perpendicular to the substrate's surface, all of the layers contained a noncrystalline phase with a volume fraction between 4% and 25%. A high oxygen content of several per cent in the porous phase was detected by electron energy loss spectrometry. Deep-level transient spectroscopy of the crystals suggests that the concentration of electrically active defects is less than 1% of the undoped background concentration of typically 10^17 cm -3. Frequency-dependent measurements of the conductance and capacitance perpendicular to the substrate surface showed that a hopping process takes place within the noncrystalline phase parallel to the conduction in the crystals. The parasitic contribution to the electrical circuit arising from the porous phase is believed to be an important loss mechanism in the output of a pin-structured photovoltaic solar cell deposited by hot-wire CVD.

Studies on grain boundaries in nanocrystalline silicon grown by Hot-Wire CVD

The use of a tantalum wire in hot-wire chemical vapour deposition (HWCVD) has allowed the deposition of dense nanocrystalline silicon at low filament temperatures (1550 °C). A transition in the crystalline preferential orientation from (2 2 0) to (1 1 1) was observed around 1700 °C. Transmission electron microscopy (TEM) images, together with secondary ion mass spectrometry (SIMS) measurements, suggested that no oxidation occurred in materials obtained at low filament temperature due to the high density of the tissue surrounding grain boundaries. A greater concentration of SiH 3 radicals formed at these temperatures seemed to be responsible for the higher density.

Kuumalanka-anemometri virtausmittauksissa

Tässä työssä selostetaan kuumalanka-anemometrin käyttö virtausmittauksissa. Kuumalanka-anemometrilla saadaan mitattua virtausnopeuden ja -suunnan lisäksi nopeusheilahteluja. Mittaustaajuus on tyypillisesti useita kymmeniä tuhansia mittauksia sekunnissa ja signaali on jatkuva. Nykytekniikalla pystytään helposti tallentamaan mittauslaitteistolta saatu viesti tietokoneelle ja muuntamaan se nopeudeksi. Hetkellisten nopeuksien avulla voidaan laskea turbulenttisen virtauksen ominaisuuksia, kuten turbulenssin intensiteetti ja spektri. Kuumalanka-anemometrissa lämmitetään sähköisesti ohutta lankaa, joka on mitattavassa virtauksessa. Langan sähköteho on suunnilleen yhtäsuuri kuin langasta konvektiolla siirtyvä lämpöteho. Tällöin on teoreettisesti mahdollista laskea virtausnopeus lämpötehosta lämmönsiirtokorrelaatioilla. Käytännössä laitteisto joudutaan kuitenkin erikseen kalibroimaan, mutta sähkötehon teoreettista riippuvuutta konvektiosta käytetään hyväksi. Kuumalangan lämmitettävä osuus on tyypillisesti halkaisijaltaan 5 µm ja pituudeltaan noin 1 mm. Sitä käytetään pääasiassa kaasuvirtausten mittaamiseen ja valtaosassa mittauksissa virtausaineena on ilma. Kuumalanka voi olla toteutettu kuumakalvotekniikalla, jossa halkaisijaltaan noin 50 - 70 µm paksuinen kuitu on päällystetty ohuella sähköä johtavalla kalvolla. Kuumakalvoanturin ei tarvitse olla muodoltaan sylinterimäinen, se voi olla mm. kartiomainen tai kiilamainen. Erikoispäällystetyllä kuumakalvoanturilla on mahdollista mitata myös nestevirtauksia. Mitattaessa kaasuvirtauksia kuumakalvon etuna on selvästi parempi kestävyys verrattuna kuumalankaan. Nimitystä kuumalanka-anemometri käytetään yleisesti molemmista anturityypeistä Tämän työn alussa käsitellään sylinterin yli tapahtuvaan virtaukseen liittyvää virtausmekaniikkaa ja lämmönsiirtoa. Anemometrin sähköinen osa, laitteisto ja sen kalibrointi käydään läpi. Langan suuntariippuvuuden laskentaan esitetään tarvittavat yhtälöt. Työssä esitellään kolme laitteistolla tehtyä perusmittausta: anturin kohtauskulman muuttaminen, pyörähdyssymmerisen suihkun nopeuskenttä ja tuulitunnelin rajakerros. Lisäksi esitellään yksi käytännöllinen ja vaativampi mittaus, jossa on mitattu nopeusprofiili radiaalikompressorin diffuusorin loppuosassa.

Hot wire configuration for depositing device grade nano-crystalline silicon at high deposition rate

The University of Barcelona is developing a pilot-scale hot wire chemical vapor deposition (HW-CVD) set up for the deposition of nano-crystalline silicon (nc-Si:H) on 10 cm × 10 cm glass substrate at high deposition rate. The system manages 12 thin wires of 0.15-0.2 mm diameter in a very dense configuration. This permits depositing very uniform films, with inhomogeneities lower than 2.5%, at high deposition rate (1.5-3 nm/s), and maintaining the substrate temperature relatively low (250 °C). The wire configuration design, based on radicals' diffusion simulation, is exposed and the predicted homogeneity is validated with optical transmission scanning measurements of the deposited samples. Different deposition series were carried out by varying the substrate temperature, the silane to hydrogen dilution and the deposition pressure. By means of Fourier transform infrared spectroscopy (FTIR), the evolution in time of the nc-Si:H vibrational modes was monitored. Particular importance has been given to the study of the material stability against post-deposition oxidation.