Study of the Compressive Strength of Aluminum Curved Elements

Currently, the Specification for Aluminum Structures (Aluminum Association, 2010) shows thin-walled aluminum plate sections with radii greater than eight inches have a lower compressive strength capacity than a flat plate with the same width and thickness. This inconsistency with intuition, which suggests any degree of folding a plate should increase its elastic buckling strength, inspired this study. A wide range of curvatures are studied—from a nearly flat plate to semi-circular. To quantify the curvature, a single non-dimensional parameter is used to represent all combinations of width, thickness and radius. Using the finite strip method (CU-FSM), elastic local buckling stresses are investigated. Using the ratio of stress values of curved plates compared to flat plates of the same size, equivalent plate-buckling coefficients are calculated. Using this data, nonlinear regression analyses are performed to develop closed form equations for five different edge support conditions. These equations can be used to calculate the elastic critical buckling stress for any curved aluminum section when the geometric properties (width, thickness, and radius) and the material properties (elastic modulus and Poisson’s ratio) are known. This procedure is illustrated in examples, each showing the applicability of the derived equations to geometries other than those investigated in this study and also providing comparisons with theoretically exact numerical analysis results.

Hitsauksen aiheuttamat muodonmuutokset ja niiden hallinta alumiiniveneiden rakenteissa

Alumiiniveneissä hitsauksen aiheuttamat muodonmuutokset ovat usein erittäin haitallisia, koska niiden aiheuttamat mittamuutokset ja ulkonäölliset haitat alentavat tuotteen laatua sekä arvoa. Monissa tapauksissa myös hitsausliitoksen suorituskyky heikentyy ja lisäksi hitsausmuodonmuutokset voivat aiheuttaa toiminnallisia ongelmia alumiiniveneiden runkorakenteisiin. Tästä johtuen hitsausmuodonmuutosten hallinta ja minimointi ovat erityisen tärkeitä tekijöitä pyrittäessä parantamaan alumiiniveneiden laatua ja kustannustehokkuutta sekä kasvattamaan alumiinivenealan kilpailukykyä. Tässä diplomityössä tutkittiin robotisoidun kaasukaarihitsauksen aiheuttamia muodonmuutoksia sekä niiden hallintaa alumiinista valmistettujen työ- ja huviveneiden runkorakenteissa. Työssä perehdyttiin nykyaikaiseen alumiinivenevalmistukseen sekä hitsattujen rakenteiden yleisiin lujuusopin teorioihin ja käyttäytymismalleihin. Alumiinin hitsausmuodonmuutosten tutkimuksissa suoritettiin käytännön hitsauskokeita, joiden kohteina olivat alumiiniveneissä käytetyt rakenneratkaisut ja liitostyypit. Työn tavoitteena oli määrittää alumiinin hitsauksessa syntyviin muodonmuutoksiin keskeisesti vaikuttavia tekijöitä ja parametreja. Tutkimustulosten perusteella pyrittiin esittämään ratkaisuja alumiiniveneiden rakenteisiin aiheutuvien hitsausmuodonmuutosten vähentämiseksi ja hallitsemiseksi. Alumiinirakenteissa hitsausmuodonmuutokset ovat hyvin tapauskohtaisia, koska usein niiden syntyminen määräytyy monen tekijän yhteisvaikutuksesta. Teräsrakenteille käytetyt yleiset analyyttiset laskentakaavat ja käyttäytymismallit eivät sovellu suoraan alumiinirakenteille, mikä johtuu alumiinin erilaisista materiaaliominaisuuksista ja käyttäytymisestä hitsauksen aikana. Tulevaisuudessa empiiristen koejärjestelyiden ja analyyttisten mallien lisäksi sovellettavan numeerisen elementtimenetelmän avulla voidaan parantaa alumiinin hitsauksessa aiheutuvien muodonmuutosten kokonaisvaltaista hallintaa.

Hitsatun alumiinirakenteen suunnittelu

Alumiiniseosten käyttö konstruktiomateriaalina lisääntyy johtuen sen lukuisista variaatioista lujuuden ja muovattavuuden suhteen. Alumiinin keveys on merkittävä kilpailuetu teräkseen nähden. Alumiiniseosten hitsattavuus on parantunut hitsausmenetelmien kehittyessä. Uusilla menetelmillä lämmöntuontia hallitaan paremmin, kuten myös alumiinin huokoisuutta sekä lujuuden laskua hitsauksen yhteydessä. Tässä diplomityössä tutkitaan alumiinin metallurgiaa, hitsausmenetelmiä, sekä alumiinin ja teräksen sekaliitoksen toteutusta. Tutkimuksella pyritään tekemään hitsatun alumiinirakenteen suunnittelua ymmärrettävämmäksi. SFS-EN standardit antavat perustuksen alumiinirakenteen suunnittelulle. Tässä diplomityössä tehdään suunnitteluesimerkki hitsatun alumiinirakenteen hitsien suunnittelusta. Suunnitteluesimerkissä tutkitaan alumiiniseoksen lujuuden laskua hitsattaessa, ja etsitään standardien antamia ratkaisuja toimivan hitsatun rakenteen toteuttamiseksi.

Sizing PZT Transducers in Impedance-Based Structural Health Monitoring

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Coupling rate measurement of a novel multi-actuated piezoelectric device using optical interferometry

The class of piezoelectric actuators considered in this paper consists of a multi-flexible structure actuated by two or more piezoceramic devices that must generate different output displacements and forces at different specified points of the domain and in different directions. The devices were modeled by finite element using the software ANSYS and the topology optimization method. The following XY actuators were build to achieve maximum displacement in the X and Y directions with a minimum crosstalk between them. The actuator prototypes are composed of an aluminum structure, manufactured by using a wire Electrical Discharge Machining, which are bonded to rectangular PZT5A piezoceramic blocks by using epoxy resin. Multi-actuator piezoelectric device displacements can be measured by using optical interferometry, since it allows dynamic measurements in the kHz range, which is of the order of the first resonance frequency of these piezomechanisms. A Michelson-type interferometer, with a He-Ne laser source, is used to measure the displacement amplitudes in nanometric range. A new optical phase demodulation technique is applied, based on the properties of the triangular waveform drive voltage applied to the XY piezoelectric nanopositioner. This is a low-phase-modulation-depth-like technique that allows the rapid interferometer auto-calibration. The measurements were performed at 100 Hz frequency, and revealed that the device is linear voltage range utilized in this work. The ratio between the generated and coupled output displacements and the drive voltages is equal to 10.97 nm/V and 1.76 nm/V, respectively, which corresponds to a 16% coupling rate. © 2010 IEEE.

A new microcontrolled structural health monitoring system based on the electromechanical impedance principle

This article presents a new method to detect damage in structures based on the electromechanical impedance principle. The system follows the variations in the output voltage of piezoelectric transducers and does not compute the impedance itself. The proposed system is portable, autonomous, versatile, and could efficiently replace commercial instruments in different structural health monitoring applications. The identification of damage is performed by simply comparing the variations of root mean square voltage from response signals of piezoelectric transducers, such as lead zirconate titanate patches bonded to the structure, obtained for different frequencies of the excitation signal. The proposed system is not limited by the sampling rate of analog-to-digital converters, dispenses Fourier transform algorithms, and does not require a computer for processing, operating autonomously. A low-cost prototype based on microcontroller and digital synthesizer was built, and experiments were carried out on an aluminum structure and excellent results have been obtained. © The Author(s) 2012.

Desenvolvimento e implementação de um sistema para detecção de falhas em estruturas usando microcontrolador

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Uma Contribuição aos Sistemas de Monitoramento de Integridade Estrutural Baseados na Impedância Eletromecânica

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

A review on the development and properties of continuous fiber/epoxy/aluminum hybrid composites for aircraft structures

Weight reduction and improved damage tolerance characteristics were the prime drivers to develop new family of materials for the aerospace/ aeronautical industry. Aiming this objective, a new lightweight Fiber/ Metal Laminate (FML) has been developed. The combination of metal and polymer composite laminates can create a synergistic effect on many properties. The mechanical properties of FML shows improvements over the properties of both aluminum alloys and composite materials individually. Due to their excellent properties, FML are being used as fuselage skin structures of the next generation commercial aircrafts. One of the advantages of FML when compared with conventional carbon fiber/epoxy composites is the low moisture absorption. The moisture absorption in FML composites is slower when compared with polymer composites, even under the relatively harsh conditions, due to the barrier of the aluminum outer layers. Due to this favorable atmosphere, recently big companies such as EMBRAER, Aerospatiale, Boing, Airbus, and so one, starting to work with this kind of materials as an alternative to save money and to guarantee the security of their aircrafts.

Investigation of generation -recombination noise and related processes in aluminum gallium arsenide TEGFETs and Hall structures with quantum wells

Experimental and theoretical studies regarding noise processes in various kinds of AlGaAs/GaAs heterostructures with a quantum well are reported. The measurement processes, involving a Fast Fourier Transform and analog wave analyzer in the frequency range from 10 Hz to 1 MHz, a computerized data storage and processing system, and cryostat in the temperature range from 78 K to 300 K are described in detail. The current noise spectra are obtained with the “three-point method”, using a Quan-Tech and avalanche noise source for calibration. ^ The properties of both GaAs and AlGaAs materials and field effect transistors, based on the two-dimensional electron gas in the interface quantum well, are discussed. Extensive measurements are performed in three types of heterostructures, viz., Hall structures with a large spacer layer, modulation-doped non-gated FETs, and more standard gated FETs; all structures are grown by MBE techniques. ^ The Hall structures show Lorentzian generation-recombination noise spectra with near temperature independent relaxation times. This noise is attributed to g-r processes in the 2D electron gas. For the TEGFET structures, we observe several Lorentzian g-r noise components which have strongly temperature dependent relaxation times. This noise is attributed to trapping processes in the doped AlGaAs layer. The trap level energies are determined from an Arrhenius plot of log (τT2) versus 1/T as well as from the plateau values. The theory to interpret these measurements and to extract the defect level data is reviewed and further developed. Good agreement with the data is found for all reported devices. ^

Effective Electromechanical Coupling Coefficients of Piezoelectric Adaptive Structures: Critical Evaluation and Optimization

This work presents a critical analysis of methodologies to evaluate the effective (or generalized) electromechanical coupling coefficient (EMCC) for structures with piezoelectric elements. First, a review of several existing methodologies to evaluate material and effective EMCC is presented. To illustrate the methodologies, a comparison is made between numerical, analytical and experimental results for two simple structures: a cantilever beam with bonded extension piezoelectric patches and a simply-supported sandwich beam with an embedded shear piezoceramic. An analysis of the electric charge cancelation effect on the effective EMCC observed in long piezoelectric patches is performed. It confirms the importance of reinforcing the electrodes equipotentiality condition in the finite element model. Its results indicate also that smaller (segmented) and independent piezoelectric patches could be more interesting for energy conversion efficiency. Then, parametric analyses and optimization are performed for a cantilever sandwich beam with several embedded shear piezoceramic patches. Results indicate that to fully benefit from the higher material coupling of shear piezoceramic patches, attention must be paid to the configuration design so that the shear strains in the patches are maximized. In particular, effective square EMCC values higher than 1% were obtained embedding nine well-spaced short piezoceramic patches in an aluminum/foam/aluminum sandwich beam.

Enhanced resistive switching and multilevel behavior in bilayered HfAlO/HfAlOx structures for non-volatile memory applications

In this work, hafnium aluminum oxide (HfAlO) thin films were deposited by ion beam sputtering deposition technique on Si substrate. The presence of oxygen vacancies in the HfAlOx layer deposited in oxygen deficient environment is evidenced from the photoluminescence spectra. Furthermore, HfAlO(oxygen rich)/HfAlOx(oxygen poor) bilayer structures exhibit multilevel resistive switching (RS), and the switching ratio becomes more prominent with increasing the HfAlO layer thickness. The bilayer structure with HfAlO/HfAlOx thickness of 30/40 nm displays the enhanced multilevel resistive switching characteristics, where the high resistance state/ intermediate resistance state (IRS) and IRS/low resistance state resistance ratios are 102 and 5 105 , respectively. The switching mechanisms in the bilayer structures were investigated by the temperature dependence of the three resistance states. This study revealed that the multilevel RS is attributed to the coupling of ionic conduction and the metallic conduction, being the first associated to the formation and rupture of conductive filaments related to oxygen vacancies and the second with the formation of a metallic filament. Moreover, the bilayer structures exhibit good endurance and stability in time.

Preparation and Characterization ofHigh-k Aluminum Oxide Thin Films by Atomic Layer Deposition for Gate Dielectric Applications

Present work deals with the Preparation and characterization of high-k aluminum oxide thin films by atomic layer deposition for gate dielectric applications.The ever-increasing demand for functionality and speed for semiconductor applications requires enhanced performance, which is achieved by the continuous miniaturization of CMOS dimensions. Because of this miniaturization, several parameters, such as the dielectric thickness, come within reach of their physical limit. As the required oxide thickness approaches the sub- l nm range, SiO 2 become unsuitable as a gate dielectric because its limited physical thickness results in excessive leakage current through the gate stack, affecting the long-term reliability of the device. This leakage issue is solved in the 45 mn technology node by the integration of high-k based gate dielectrics, as their higher k-value allows a physically thicker layer while targeting the same capacitance and Equivalent Oxide Thickness (EOT). Moreover, Intel announced that Atomic Layer Deposition (ALD) would be applied to grow these materials on the Si substrate. ALD is based on the sequential use of self-limiting surface reactions of a metallic and oxidizing precursor. This self-limiting feature allows control of material growth and properties at the atomic level, which makes ALD well-suited for the deposition of highly uniform and conformal layers in CMOS devices, even if these have challenging 3D topologies with high aspect-ratios. ALD has currently acquired the status of state-of-the-art and most preferred deposition technique, for producing nano layers of various materials of technological importance. This technique can be adapted to different situations where precision in thickness and perfection in structures are required, especially in the microelectronic scenario.

Specific surface area and structures of aluminas from fibrillar pseudoboehmite

By heating powders of the aluminum monohydroxide fibrillar pseudoboehmite from 200 degrees C to 1400 degrees C several high surface area aluminas are prepared and characterized by X-ray diffraction and electron optical methods. Aqueous sols with pseudoboehmite fibrils of different lengths were dried by two methods: at room temperature and spray-dried. The following aluminas were obtained after treatment of the powders at increasing temperatures and having a range of specific surface areas: gamma-Al(2)O(3) (470 degrees C - 770 degrees C; 179 m(2)/g 497 m(2)/g); delta-Al(2)O(3) (770 degrees C - 930 degrees C; 156 m(2)/g - 230 m(2)/g); theta-Al(2)O(3) (930 degrees C - 1050 degrees C; 11 m(2)/g - 200 m(2)/g); alpha-Al(2)O(3) (1050 degrees C - 1400 degrees C; 2 m(2)/g - 17 m(2)/g). Spray-dried powders, fired at the same temperature than the ground powders, showed higher specific surface areas. The higher surface area alumina have values of the same order of magnitude of the commercial ""ad-cat"" aluminas.

Clustering of rare earth in glasses, aluminum effect: experiments and modeling

Luminescent spectra of Eu3+-doped sol-gel glasses have been analyzed during the densification process and compared according to the presence or not of aluminum as a codoping ion. A transition temperature from hydrated to dehydroxyled environments has been found different for doped and codoped samples. However, only slight modifications have been displayed from luminescence measurements beyond this transition. To support the experimental analysis, molecular dynamics simulations have been performed to model the doped and codoped glass structures. Despite no evidence of rare earth clustering reduction due to aluminum has been found, the modeled structures have shown that the luminescent ions are mainly located in aluminum-rich domains. The synthesis of both experimental and numerical analyses has lead us to interpret the aluminum effect as responsible for differences in structure of the luminescent sites rather than for an effective dispersion of the rare earth ions. (C) 2004 Elsevier B.V. All rights reserved.