Comparative analysis of triple band S-C-L erbium-doped fibre and semiconductor optical amplifier for CWDM applications

The authors present a comparative analysis between a triple-band S-C-L erbium-doped fibre amplifier and a commercial semiconductor optical amplifier in a CWDM application scenario. Both technologies were characterised for gain and noise figures from 1480 to 1610 nm (S, C and L bands) and their systemic performances were evaluated in terms of bit error rate measurements for a wide range of optical power levels.

A class B switch-mode assisted linear amplifier

A switch-mode assisted linear amplifier (SMALA) combining a linear (Class B) and a switch-mode (Class D) amplifier is presented. The usual single hysteretic controlled half-bridge current dumping stage is replaced by two parallel buck converter stages, in a parallel voltage controlled topology. These operate independently: one buck converter sources current to assist the upper Class B output device, and a complementary converter sinks current to assist the lower device. This topology lends itself to a novel control approach of a dead-band at low power levels where neither class D amplifier assists, allowing the class B amplifier to supply the load without interference, ensuring high fidelity. A 20 W implementation demonstrates 85% efficiency, with distortion below 0.08% measured across the full audio bandwidth at 15 W. The class D amplifier begins assisting at 2 W, and below this value, the distortion was below 0.03%. Complete circuitry is given, showing the simplicity of the additional class D amplifier and its corresponding control circuitry.

A 5GHz1.8V Low Power CMOS Low-Noise Amplifier

Wireless local-area networks (WLANs) have been deployed as office and home communications infrastructures worldwide. The diversification of the standards, such as IEEE 802.11 series demands the design of RF front-ends. Low power consumption is one of the most important design concerns in the application of those technologies. To maintain competitive hardware costs, CMOS has been used since it is the best solution for low cost and high integration processing, allowing analog circuits to be mixed with digital ones. In the receiver chain, the low noise amplifier (LNA) is one of the most critical blocks in a transceiver design. The sensitivity is mainly determined by the LNA noise figure and gain. It interfaces with the pre-select filter and the mixer. Furthermore, since it is the first gain stage, care must be taken to provide accurate input match, low-noise figure, good linearity and a sufficient gain over a wide band of operation. Several CMOS LNAs have been reported during the last decade, showing that the most research has been done at 802.11/b and GSM standards (900-2400MHz spectrum) and more recently at 802.11/a (5GHz band). One of the more significant disadvantages of 802.11/b is that the frequency band is crowded and subject to interference from other technologies, as is 2.4GHz cordless phones and Bluetooth. As the demand for radio-frequency integrated circuits, operating at higher frequency bands, increases, the IEEE 802.11/a standard becomes a very attractive option to wireless communication system developers. This paper presents the design and implementation of a low power, low noise amplifier aimed at IEEE 802.11a for WLAN applications. It was designed to be integrated with an active balun and mixer, representing the first step toward a fully integrated monolithic WLAN receiver. All the required circuits are integrated at the same die and are powered by 1.8V supply source. Preliminary experimental results (S-parameters) are shown and promise excellent results. The LNA circuit design details are illustrated in Section 2. Spectre simulation results focused at gain, noise figure (NF) and input/output matching are presented in Section 3. Finally, conclusions and comparison with other recently reported LNAs are made in Section 4, followed by future work.

Direct Color Sensor, Optical Amplifier and Demux Device Integrated on a Single Monolithic SiC Photodetector

A pi'n/pin a-SiC:H voltage and optical bias controlled device is presented and its behavior as image and color sensor, optical amplifier and demux device is discussed. The design and the light source properties are correlated with the sensor output characteristics. Different readout techniques are used. When a low power monochromatic scanner readout the generated carriers the transducer recognizes a color pattern projected on it acting as a direct color and image sensor. Scan speeds up to 10(4) lines per second are achieved without degradation in the resolution. If the photocurrent generated by different monochromatic pulsed channels is readout directly, the information is demultiplexed. Results show that it is possible to decode the information from three simultaneous color channels without bit errors at bit rates per channel higher than 4000 bps. Finally, when triggered by light of appropriated wavelength, it can amplify or suppress the generated photocurrent working as an optical amplifier (C) 2009 Published by Elsevier Ltd.

A multiplying-by-two CMOS amplifier for high-speed ADCs based on parametric amplification

15th International Conference on Mixed Design of Integrated Circuits and Systems, pp. 177 – 180, Poznan, Polónia

Implementation of a sigma delta modulator for a class D audio power amplifier

Dissertação para obtenção do Grau de Mestre em Engenharia Electrotécnica e de Computadores

Design of a power output stage for a class D audio power amplifier based on an 1.5-bit ∑ ∆ M

Dissertação apresentada para obtenção do Grau de Mestre em Engenharia Electrotécnica e de Computadores, pela Universidade Nova de Lisboa, Faculdade de Ciências e Tecnologia

Transimpedance amplifier for integrated SpO2 optic sensor

Dissertação para obtenção do Grau de Mestre em Engenharia Electrotécnica e de Computadores

A 1.2 V low noise amplifier with double feedback for high gain and low noise figure

Dissertação para obtenção do Grau de Mestre em Engenharia Eletrotécnica e de Computadores

Transimpedance amplifier for early detection of breast cancer

Breast cancer is the most common type of cancer worldwide. The effectiveness of its treatment depends on early stage detection, as well as on the accuracy of its diagnosis. Recently, diagnosis techniques have been submitted to relevant breakthroughs with the upcoming of Magnetic Resonance Imaging, Ultrasound Sonograms and Positron Emission Tomography (PET) scans, among others. The work presented here is focused on studying the application of a PET system to a Positron Emission Mammography (PEM) system. A PET/PEM system works under the principle that a scintillating crystal will detect a gamma-ray pulse, originated at the cancerous cells, converting it into a correspondent visible light pulse. The latter must then be converted into an electrical current pulse by means of a Photo- -Sensitive Device (PSD). After the PSD there must be a Transimpedance Amplifier (TIA) in order to convert the current pulse into a suitable output voltage, in a time period lower than 40 ns. In this Thesis, the PSD considered is a Silicon Photo-Multiplier (SiPM). The usage of this recently developed type of PSD is impracticable with the conventional TIA topologies, as it will be proven. Therefore, the usage of the Regulated Common-Gate (RCG) topology will be studied in the design of the amplifier. There will be also presented two RCG variations, comprising a noise response improvement and differential operation of the circuit. The mentioned topology will also be tested in a Radio-Frequency front-end, showing the versatility of the RCG. A study comprising a low-voltage self-biasing feedback TIA will also be shown. The proposed circuits will be simulated with standard CMOS technology (UMC 130 nm), using a 1.2 V power supply. A power consumption of 0.34 mW with a signal-to-noise ratio of 43 dB was achieved.

Design of a CMOS amplifier for breast cancer detection

A transimpedance amplifier (TIA) is used, in radiation detectors like the positron emission tomography(PET), to transform the current pulse produced by a photo-sensitive device into an output voltage pulse with a desired amplitude and shape. The TIA must have the lowest noise possible to maximize the output. To achieve a low noise, a circuit topology is proposed where an auxiliary path is added to the feedback TIA input, In this auxiliary path a differential transconductance block is used to transform the node voltage in to a current, this current is then converted to a voltage pulse by a second feedback TIA complementary to the first one, with the same amplitude but 180º out of phase with the first feedback TIA. With this circuit the input signal of the TIA appears differential at the output, this is used to try an reduced the circuit noise. The circuit is tested with two different devices, the Avalanche photodiodes (APD) and the Silicon photomultiplier (SIPMs). From the simulations we find that when using s SIPM with Rx=20kΩ and Cx=50fF the signal to noise ratio is increased from 59 when using only one feedback TIA to 68.3 when we use an auxiliary path in conjunction with the feedback TIA. This values where achieved with a total power consumption of 4.82mv. While the signal to noise ratio in the case of the SIPM is increased with some penalty in power consumption.

Characterization of an OPCPA laser amplifier based on the nonlinear crystal YCOB

The work described in this thesis was performed at the Laboratory for Intense Lasers (L2I) of Instituto Superior Técnico, University of Lisbon (IST-UL). Its main contribution consists in the feasibility study of the broadband dispersive stages for an optical parametric chirped pulse amplifier based on the nonlinear crystal yttrium calcium oxi-borate (YCOB). In particular, the main goal of this work consisted in the characterization and implementation of the several optical devices involved in pulse expansion and compression of the amplified pulses to durations of the order of a few optical cycles (20 fs). This type of laser systems find application in fields such as medicine, telecommunications and machining, which require high energy, ultrashort (sub-100 fs) pulses. The main challenges consisted in the preliminary study of the performance of the broadband amplifier, which is essential for successfully handling pulses with bandwidths exceeding 100 nm when amplified from the μJ to 20 mJ per pulse. In general, the control, manipulation and characterization of optical phenomena on the scale of a few tens of fs and powers that can reach the PW level are extremely difficult and challenging due to the complexity of the phenomena of radiation-matter interaction and their nonlinearities, observed at this time scale and power level. For this purpose the main dispersive components were characterized in detail, specifically addressing the demonstration of pulse expansion and compression. The tested bandwidths are narrower than the final ones, in order to confirm the parameters of these elements and predict the performance for the broadband pulses. The work performed led to additional tasks such as a detailed characterization of laser oscillator seeding the laser chain and the detection and cancelling of additional sources of dispersion.

Switching mode power amplifier for bluetooth applications

Modern fully integrated transceivers architectures, require circuits with low area, low cost, low power, and high efficiency. A key block in modern transceivers is the power amplifier, which is deeply studied in this thesis. First, we study the implementation of a classical Class-A amplifier, describing the basic operation of an RF power amplifier, and analysing the influence of the real models of the reactive components in its operation. Secondly, the Class-E amplifier is deeply studied. The different types of implementations are reviewed and theoretical equations are derived and compared with simulations. There were selected four modes of operation for the Class-E amplifier, in order to perform the implementation of the output stage, and the subsequent comparison of results. This led to the selection of the mode with the best trade-off between efficiency and harmonics distortion, lower power consumption and higher output power. The optimal choice was a parallel circuit containing an inductor with a finite value. To complete the implementation of the PA in switching mode, a driver was implemented. The final block (output stage together with the driver) got 20 % total efficiency (PAE) transmitting 8 dBm output power to a 50 W load with a total harmonic distortion (THD) of 3 % and a total consumption of 28 mW. All implementations are designed using standard 130 nm CMOS technology. The operating frequency is 2.4 GHz and it was considered an 1.2 V DC power supply. The proposed circuit is intended to be used in a Bluetooth transmitter, however, it has a wider range of applications.

Design of an amplifier and an instrumentation setup for a harsh environment heat flux measurement application – case axial flux electric machine

Measurement is a tool for researching. Therefore, it is important that the measuring process is carried out correctly, without distorting the signal or the measured event. Researches of thermoelectric phenomena have been focused more on transverse thermoelectric phenomena during recent decades. Transverse Seebeck effect enables to produce thinner and faster heat flux sensor than before. Studies about transverse Seebeck effect have so far focused on materials, so in this Master’s Thesis instrumentation of transverse Seebeck effect based heat flux sensor is studied, This Master’s Thesis examines an equivalent circuit of transverse Seebeck effect heat flux sensors, their connectivity to electronics and choosing and design a right type amplifier. The research is carried out with a case study which is Gradient Heat Flux Sensors and an electrical motor. In this work, a general equivalent circuit was presented for the transverse Seebeck effect-based heat flux sensor. An amplifier was designed for the sensor of the case study, and the solution was produced for the measurement of the local heat flux of the electric motor to improve the electromagnetic compatibility.