Melanoma cell invasiveness is regulated by miR-211 suppression of the BRN2 transcription factor

To identify microRNAs potentially involved in melanomagenesis, we compared microRNA expression profiles between melanoma cell lines and cultured melanocytes. The most differentially expressed microRNA between the normal and tumor cell lines was miR-211. We focused on this pigment-cell-enriched miRNA as it is derived from the microphthalmia-associated transcription factor (MITF)-regulated gene, TRPM1 (melastatin). We find that miR-211 expression is greatly decreased in melanoma cells and melanoblasts compared to melanocytes. Bioinformatic analysis identified a large number of potential targets of miR-211, including POU3F2 (BRN2). Inhibition of miR-211 in normal melanocytes resulted in increased BRN2 protein, indicating that endogenous miR-211 represses BRN2 in differentiated cells. Over-expression of miR-211 in melanoma cell lines changed the invasive potential of the cells in vitro through directly targeting BRN2 translation. We propose a model for the apparent non-overlapping expression levels of BRN2 and MITF in melanoma, mediated by miR-211 expression.

Microstructural studies of quenched partially-melted Y-123 materials and Y-123 with Y-211, PtO2 and CeO2 additions

The microstructure of YBa2Cu3O7-delta (Y-123) materials partially-melted in air and quenched from the temperature range 900-1100 degrees C, has been characterized using a combination of X-ray diffractometry, optical microscopy, scanning electron microscopy, electron microprobe analyses, transmission electron microscopy and energy and wave dispersive X-ray spectrometries. The microstructural studies reveal significant changes in the character of the quenched partial-melt as a function of temperature and time before quenching. BaCu2O2 and BaCuO2 are found to co-exist in stoichiometric samples quenched from the temperature range 920-960 degrees C. Under suitable cooling conditions, large pockets of melt cristallize as BaCuO2 with an exsolution of BaCu2O2 in the form of thin plates (approximate to 50-100 nm thick) along facets. Y2BaCuO5 (Y-211) additions are associated with the formation of BaCu2O2 at 1100 degrees C. Preliminary results on the effects of PtO2 and CeO2 additions to Y-123 (and Y-123 with Y-211 additions) show that these enhace the formation of BaCu2O2 at the melting temperature of 1100 degrees C. (C) 1998 Elsevier Science S.A. All rights reserved.

Sapientia, 2002, Vol. LVII, nº 211 (número completo)

Contenido: L’inquiétude de Dieu chez saint Augustin / Rosa Muriel Zelasco – El camino trinitario a la deificación conforme a los místicos renanos del siglo XIV: Meister Eckhart, Juan Tauler y el beato Enrique Seuze / Brian J. Farrelly – El comentario de Santo Tomás a los Posteriores analíticos: notas metodológicas / Celina A. Lértora Mendoza – Memoria e identidad en Santo Tomás de Aquino / Martín Federico Echavarría -- ¿Elegimos a Dios?: acerca de la no elección del fin último en concreto según Tomás de Aquino / Beatriz Reyes Oribe – Hacia un realismo hermenéutico sobre la base Santo Tomás de Aquino-Husserl: Los horizontes / Gabriel J. Zanotti – Pascal à la lumière de saint Jean de la Croix / André Bord – El principio de contradicción en Kant / Lorenzo Vicente Burgoa – La mutua implicación poder-saber según Michel Foucault / Jorge Martínez Barrera – Modernidad e Ilustración en Jürgen Habermas / Francisco Leocata – Hacia una hermenéutica analógico-icónica del símbolo / Mauricio Beuchot – El principio de autoridad / Mario Enrique Sacchi – Notas y comentarios – Discusiones -- Bibliografía

Investigation of DyBa2Cu3O7-d superconducting domains grown by the infiltration technique starting with small size Dy-211 particles

An infiltration and growth process is here used as an alternative to the classical top-seeded melt-textured growth process for the production of Dy-123 single-domains with finely dispersed small size Dy-211 particles. The starting materials are the 211-particles and a barium and copper rich liquid phase precursor. The infiltration and growth process allows for controlling both the spatial and size distribution of the 211-particles in the final superconducting 123-single-domain. The main parameters (set-ups, maximum processing temperature with respect to the peritectic temperature, nature of reactant, porosity of the 211-preform) of the infiltration and growth process are discussed. Moreover, different processes of chimie douce are shown in order to produce Dy-211 particles with controlled shape and size, particles that can be used as precursors for the infiltration and growth process. © 2005 IOP Publishing Ltd.

Infrared absorption efficiency in AlAs/AlxGa1-xAs type-II multiple-quantum-well structure grown on (211) GaAs substrate

We have made a normal incidence high infrared absorption efficiency AlAs/Al0.55Ga0.45As multiple-quantum-well structure grown on (211) GaAs substrates by molecular beam epitaxy (MBE). A strong infrared absorption signal at 11.6 mu m due to the transition of the ground state to the first excited state, and a small signal at 6.8 mu m due to the transition from the ground state to continuum. were observed. A 45 degrees tilted incidence measurement was also performed on the same sample for the comparison with a normal incidence measurement. Both measurements provide important information about the quantum well absorption efficiency. Efficiencies which evaluate the absorption of electric components perpendicular and parallel to the well plane are eta(perpendicular to) = 25% and eta(parallel to) = 88%, respectively. The total efficiency is then deduced to be eta = 91%. It is apparent that the efficiency eta(parallel to) dominates the total quantum efficiency eta Because an electron in the (211) AlAs well has a small effective mass (m(zx)* or m(zy)*), the normal incidence absorption coefficient is expected to be higher:than that grown on (511) and (311) substrates. Thus, in the present study, we use the (211) substrate to fabricate QWIP. The experimental results indicate the potential of these novel structures for use as normal incidence infrared photodetectors.

HIGH-RESOLUTION PHOTOLUMINESCENCE STUDIES OF (211) CDTE GROWN ON (211)B GAAS SUBSTRATE

Sharp and rich photoluminescence lines accociated with free exciton (FE), excitons bound to neutral acceptors (A0X) and donors (D0X) in molecular beam epitaxially (MBE) grown (211) CdTe/(211)B GaAs have been reported for the first time. The results show that the (211) CdTe/(211)B GaAs grown under optimized conditions could have as high a crystal perfection as those grown on lattice-matched substrates.

The temperature dependence of the adsorption of NO on Pt{211}: A RAIRS and DFT investigation

RAIRS experiments have been performed to investigate the adsorption of NO on Pt{211}. Results show that adsorption is complex and strongly temperature dependent. At 307 K, three bands are seen at saturation with frequencies of 1801, 1609, and 1576 cm(-1). However, at 120 K only two bands, at 1688 and 1620 cm(-1), are observed. To help with the assignment of these vibrational bands, DFT calculations were also performed. The calculations show that a bridged NO species, bonded to the step edge, is the most stable species on the surface and gives rise to the band observed at 1610-1620 cm(-1). The calculations also suggest that the temperature dependence of NO adsorption on Ptf{211} can be assigned to NO dissociation which occurs at room temperature but not at 120 K. In particular, the RAIRS band observed at 1801 cm(-1), which is observed on adsorption at 307 K but not at 120 K, is tentatively assigned to the formation of an O-NO complex. This species forms when a NO molecule bonds on top of an O atom, which results from the dissociation of NO on the Pt{211} surface at room temperature.