Selective Area Growth InGaAsP by MOVPE

The wide stripe (ISjum) selective area growth (SAG) of InGaAsP by low pressure MOVPE is systematically investigated. The characteristics of the growth ratios,thickness enhancement factors .bandgap modulation,and composition modulation vary with the growth conditions such as mask width,growth pressure. Flux of III-group precursors are outlined and the rational mechanism behind SAG MOVPE is explained. In addition,the surface spike of the SAG InGaAsP is shown and the course of it is given by the variation of V /III .

O estudo dos compostos e fraseologismos criados por João Cabral de Melo Neto: proposta de estudo da coindexação semântica

Pós-graduação em Linguística e Língua Portuguesa - FCLAR

Elise Kogel, Ganzfigurbildnis

Signatur des Originals: S 36/F04995

JKSimFloat V6.1 Plus: Improving flotation circuit performance by simulation

Analyzing, optimizing and designing flotation circuits using models and simulators have improved significantly over the last 15 years. Mineral flotation is now generally better understood through major advances in measuring and modeling the sub-processes within the flotation system. In addition, new and better methods have been derived to represent the floatability of particles as they move around a flotation circuit. A simulator has been developed that combines the effects of all of these sub-processes to predict the metallurgical performance of a flotation circuit. This paper presents an overview of the simulator, JKSimFloat V6.1PLUS, and its use in improving the industrial flotation plant performance. The application of the simulator at various operations is discussed with particular emphasis on the use of JKSimFloat V6.1PLUS in improving the flotation circuit performance.