952 resultados para 1.4 Ghz
Resumo:
We propose a Low Noise Amplifier (LNA) architecture for power scalable receiver front end (FE) for Zigbee. The motivation for power scalable receiver is to enable minimum power operation while meeting the run-time performance needed. We use simple models to find empirical relations between the available signal and interference levels to come up with required Noise Figure (NF) and 3rd order Intermodulation Product (IIP3) numbers. The architecture has two independent digital knobs to control the NF and IIP3. Acceptable input match while using adaptation has been achieved by using an Active Inductor configuration for the source degeneration inductor of the LNA. The low IF receiver front end (LNA with I and Q mixers) was fabricated in 130nm RFCMOS process and tested.
Resumo:
A power scalable receiver architecture is presented for low data rate Wireless Sensor Network (WSN) applications in 130nm RF-CMOS technology. Power scalable receiver is motivated by the ability to leverage lower run-time performance requirement to save power. The proposed receiver is able to switch power settings based on available signal and interference levels while maintaining requisite BER. The Low-IF receiver consists of Variable Noise and Linearity LNA, IQ Mixers, VGA, Variable Order Complex Bandpass Filter and Variable Gain and Bandwidth Amplifier (VGBWA) capable of driving variable sampling rate ADC. Various blocks have independent power scaling controls depending on their noise, gain and interference rejection (IR) requirements. The receiver is designed for constant envelope QPSK-type modulation with 2.4GHz RF input, 3MHz IF and 2MHz bandwidth. The chip operates at 1V Vdd with current scalable from 4.5mA to 1.3mA and chip area of 0.65mm2.
Resumo:
The design procedure, fabrication and measurement of a Class-E power amplifier with excellent second- and third-harmonic suppression levels are presented. A simplified design technique offering compact physical layout is proposed. With a 1.2 mm gate-width GaAs MESFET as a switching device, the amplifier is capable of delivering 19.2 dBm output power at 2.41 GHz, achieves peak PAE of 60% and drain efficiency of 69%, and exhibits 9 dB power gain when operated from a 3 V DC supply voltage. When compared to the classical Class-E two-harmonic termination amplifier, the Class-E amplifier employing three-harmonic terminations has more than 10% higher drain efficiency and 23 dB better third-harmonic suppression level. Experimental results are presented and good agreement with simulation is obtained. Further, to verify the practical implementation in communication systems, the Bluetooth-standard GFSK modulated signal is applied to both two- and three-harmonic amplifiers. The measured RMS FSK deviation error and RMS magnitude error were, for the three-harmonic case, 1.01 kHz and 0.122%, respectively, and, for the two-harmonic case, 1.09 kHz and 0.133%. © 2007 The Institution of Engineering and Technology.
Resumo:
A novel compact wideband antenna for wireless local area network (WLAN) applications in the 2.4 GHz band are presented. The proposed low profile antenna of dimensions 15 x 14.5 x 1.6 mm offers 18.6% bandwidth and an average gain of~5 dBi. The antenna can be excited directly using a 50 coaxial probe
Resumo:
A novel compact wideband antenna for wireless local area network (WLAN) applications in the 2.4 GHz band is presented. The proposed low profile antenna of dimensions 15 x 14.5 x 1.6 mm offers 18.6% bandwidth and an average gain of -5 dBi. The antenna can be excited directly using a 50 coaxial probe
Resumo:
A planar monopole antenna suitable for broadband wireless communication is designed and developed. With the use of a truncated ground plane, the proposed printed monopole antenna offers nearly 60% 2:1 VSWR bandwidth and good radiation characteristics for the frequencies across the operating band. A parametric study of the antenna is performed based on the optimized design, and a prototype of the antenna suitable for 2.4-GHz WLAN application is presented. The antenna can be easily integrated into wireless circuitry and is convenient for application in laptop computers.
Resumo:
Accurate characterization of the radio channel in tunnels is of great importance for new signaling and train control communications systems. To model this environment, measurements have been taken at 2.4 GHz in a real environment in Madrid subway. The measurements were carried out with four base station transmitters installed in a 2-km tunnel and using a mobile receiver installed on a standard train. First, with an optimum antenna configuration, all the propagation characteristics of a complex subway environment, including near shadowing, path loss,shadow fading, fast fading, level crossing rate (LCR), and average fade duration (AFD), have been measured and computed. Thereafter, comparisons of propagation characteristics in a double-track tunnel (9.8-m width) and a single-track tunnel (4.8-m width) have been made. Finally, all the measurement results have been shown in a complete table for accurate statistical modeling.
Resumo:
Halogen bonding has been observed for the first time between an isoindoline nitroxide and an iodoperfluorocarbon (see figure), which cocrystallize to form a discrete 2:1 supramolecular compound in which NO.⋅⋅⋅I halogen bonding is the dominant intermolecular interaction. This illustrates the potential use of halogen bonding and isoindoline nitroxide tectons for the assembly of organic spin systems...
Resumo:
The rate of singlet-to-triplet intersystem crossing in 1,4-didehydrobenzene (the biradical produced as a reactive intermediate in the thermal cycloaromatization of enediynes), cannot be increased by the application of an external magnetic field. The rate of product formation and the distribution of stable products of 2,3-di-n-propyl-1,4-didehydrobenzene thermolysis is unchanged at magnetic flux densities in the range 0–2000 G and at 66 000 G. Similarly, the rate of thermolysis of an unsymmetrical enediyne is insensitive to magnetic field flux in the same range. This finding precludes the modulation of enediyne reaction rates in pharmaceutical and synthetic pursuits.
Resumo:
The structure of several carboxy-substituted hexahydro-1,4:5,8-diepoxynaphthalenes have been solved with X-ray crystallography, in some cases confirming previously contentious structures. The compounds of interest are constructed in efficient one-step 2 × [4+2] cycloaddition reactions from furan and acetylene carboxylate derivatives.
Resumo:
A new diketopyrrolopyrrole (DPP)-containing donor-acceptor polymer, poly(2,5-bis(2-octyldodecyl)-3,6-di(furan-2-yl)-2,5-dihydro-pyrrolo[3,4-c] pyrrole-1,4-dione-co-thieno[3,2-b]thiophene) (PDBF-co-TT), is synthesized and studied as a semiconductor in organic thin film transistors (OTFTs) and organic photovoltaics (OPVs). High hole mobility of up to 0.53 cm 2 V -1 s -1 in bottom-gate, top-contact OTFT devices is achieved owing to the ordered polymer chain packing and favoured chain orientation, strong intermolecular interactions, as well as uniform film morphology of PDBF-co-TT. The optimum band gap of 1.39 eV and high hole mobility make this polymer a promising donor semiconductor for the solar cell application. When paired with a fullerene acceptor, PC 71BM, the resulting OPV devices show a high power conversion efficiency of up to 4.38% under simulated standard AM1.5 solar illumination.
Resumo:
Pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione or diketopyrrolopyrrole (DPP) is a useful electron-withdrawing fused aromatic moiety for the preparation of donor-acceptor polymers as active semiconductors for organic electronics. This study uses a DPP-furan-containing building block, 3,6-di(furan-2-yl)pyrrolo[3,4- c]pyrrole-1,4(2H,5H)-dione (DBF), to couple with a 2,2′-bithiophene unit, forming a new donor-acceptor copolymer, PDBFBT. Compared to its structural analogue, 3,6-di(thiophen-2-yl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione (DBT), DBF is found to cause blue shifts of the absorption spectra both in solution and in thin films and a slight reduction of the highest occupied molecular orbital (HOMO) energy level of the resulting PDBFBT. Despite the fact that its thin films are less crystalline and have a rather disordered chain orientation in the crystalline domains, PDBFBT shows very high hole mobility up to 1.54 cm 2 V-1 s-1 in bottom-gate, top-contact organic thin film transistors.