Endoplasmic reticulum targeting tumour selective photocytotoxic oxovanadium(IV) complexes having vitamin-B6 and acridinyl moieties

Oxovanadium(IV) complexes of vitamin-B6 Schiff base, viz., VO(HL1/L-2/L-3)(B)] Cl (1-4), where B is 2,2'-bipyridine (bpy in 1 and 2), 11-(9-acridinyl)dipyrido3,2-a:2',3'-c]phenazine (acdppz in 3 and 4), H2L1 center dot HCl is 3-hydroxy-5-(hydroxymethyl)-4-(((2-hydroxyphenyl)imino)methyl)-2-methylp yridin-1-ium chloride (in 1 and 4), HL2 is 2-(((2-(1H-imidazol-4-yl)ethyl) imino)methyl) phenol (in 2) and HL3 is 4-(((2-(1H-imidazol-4- yl)ethyl)imino)methyl)-5-(hydroxymethyl)-2-methylpyridin-3-ol (in 3) were synthesized, characterized and their cellular uptake, photo-activated cytotoxicity and intracellular localization were studied. Complexes 1a, as the perchlorate salt of 1, and 2a, as the hexafluorophosphate salt of 2, were structurally characterized. Vitamin-B6 transporting membrane carrier (VTC) mediated entry into tumour cells in preference to the normal ones seems to be responsible for the higher cellular uptake of the complexes into HeLa and MCF-7 cells over MCF-10A cells. Complexes 3 and 4 having acdppz as the photosensitizer exhibit remarkable photocytotoxicity in these cancer cells giving IC50 of < 0.9 mu M. The complexes remain non-toxic in the dark. The complexes show photo-induced apoptotic cell death via singlet oxygen (O-1(2)) generation. Fluorescence microscopy reveals specific localization of complex 4 to endoplasmic reticulum (ER) and generation of O-1(2) possibly leads to apoptotic cell death by triggering ER stress response (ERSR).

Investigations on the physical origin of lateral photovoltage in PbS-colloidal quantum dot/Si heterojunctions

Restricted area heterojunctions, an array of lead sulfide colloidal quantum dots (PbS-CQDs) and crystalline silicon, are studied with a non-destructive remote contact light beam induced current (RC-LBIC) technique. As well as getting good quality active area images we observed an anomalous unipolar signal response for the PbS-CQD/n-Si devices and a conventionally expected bipolar signal profile for the PbS-CQD/p-Si devices. Interestingly, our simulation results consistently yielded a unipolar and bipolar nature in the signals related to the PbSCQD/n-Si and PbS-CQD/p-Si heterostructures, respectively. In order to explain the physical mechanism involved in the unipolar signal response of the PbS-CQD/n-Si devices, we propose a model based on the band alignment in the heterojunctions, in addition to the distribution of photo-induced excess majority carriers across the junction. Given that the RC-LBIC technique is well suited to this context, the presence of these two distinct mechanisms (the bipolar and unipolar nature of the signals) needs to be considered in order to have a better interpretation of the data in the characterization of an array of homo/heterojunctions.

Photocytotoxic ternary copper(II) complexes of histamine Schiff base and pyridyl ligands

Ternary copper(Il) complexes of salicylaldehyde-histamine Schiff base (HL) and pyridyl ligands, viz. Cu(bpy)(L)](ClO4) (1) and Cu(dppz)(L)](C104) (2), where bpy is 2,2'-bipyridine (in 1) and dppz is dipyrido3,2-a:2',3'-c]phenazine (in 2), were synthesized, characterized and their DNA binding, photo-activated DNA cleavage activity and photocytotoxicity studied. The 1:1 electrolytic one-electron paramagnetic complexes showed a d-d band near 670 nm in aqueous DMF (1:1 v/v). The crystal structure of complex 1 showed the metal in CuN4O distorted square-pyramidal geometry. Complex 2 intercalatively binds to calf-thymus (ct) DNA with a binding constant (K-b) of similar to 10(5) M-1. It exhibited moderate chemical nuclease activity but excellent DNA photocleavage activity in red light of 647 nm forming (OH)-O-center dot radicals. It showed remarkable photocytotoxicity in human cervical cancer cells (HeLa) giving IC50 of 1.6 mu M in visible light (400-700 nm) with low dark toxicity. The photo-induced cell death is via generation of oxidative stress by reactive oxygen species.

高重复率半导体激光抽运Nd：YAG放大器激光特性的实验研究

实验研究了高重复率、大功率半导体激光二极管阵列（LDA）侧面环绕抽运的Nd：YAG激光放大器的放大特性、热焦距变化和热致双折射效应引起的退偏特性。偏振光绎千赫兹高功率单通激光放大器，获得约3倍的光脉冲能量放大，脉冲宽度基本保持不变，其输出的P分量与S分量的能量比趋于常数3：1，实验测得的能量放大倍率及放大光束的椭圆偏振度与理论预期吻合很好。

双调Q开关热退偏补偿全固态激光器

为了有效地补偿激光二极管(LD)侧向抽运1000 Hz重复率电光调Q Nd:YAG激光器棒状增益介质内存在的热致双折射损耗，设计了一种新颖的双调Q晶体开关复合谐振腔结构。实验结果表明，设计的双调Q晶体开关结构Nd:YAG激光器输出激光脉冲能量比单调Q晶体开关结构的非补偿腔输出能量提高了56%，当侧面抽运半导体激光器输出功率达到450 W时，激光输出达到30 mJ/pulse，输出光束偏振度优于10:1，激光脉冲宽度约14 ns。并获得6.7%的光-光转换效率。通过对双调Q开光激光谐振腔进行建模，并用求解速

热退偏损耗完全补偿的千赫兹电光调QNd:YAG激光器

为了同时补偿固体增益介质的热致双折射及热透镜效应,进一步提高重复频率1 kHz激光二极管(LD)侧向抽运高平均功率电光调Q Nd:YAG激光器的输出功率,设计了一种完全消除热退偏损耗的双调Q开关谐振腔结构,此结构在传统调Q谐振腔的基础上沿着偏振片的退偏方向增加了一个调Q谐振支路,并使得激光从增益介质方向输出。实验结果表明,此激光器的单脉冲能量比单Q开关结构的非补偿腔输出能量高出74.7%。当侧面抽运的激光二极管输出脉冲能量达到307 mJ时,激光输出能量达到26.2 mJ,光-光转换效率为8.5%,光束发

Depolarization loss compensated resonator for electro-optic Q-switched solid-state laser

A novel laser resonator for compensating depolarization loss that is due to thermally induced birefringence in active rod is reported. As this new structure being applied to an electro-optic Q-switched LIDA side-pumped Nd:YAG laser operating at a repetition rate of 1000 Hz, substantial reduction in depolarization loss has been observed, the output pulse energy is improved about 56% from that of a traditional resonator without compensation structure. With incident pump energy of 450 mJ per pulse, linearly polarized output energy of 30 mJ per pulse is achieved, the pulse duration is less than 15 ns, and the peak power of pulse is about 2 MW. The extinction ratio of laser beam is better than 10:1, and the beam divergence is 1.3 mrad with beam diameter of around 2.5 mm. (c) 2006 Published by Elsevier B.V.

飞秒激光与晶体和玻璃的相互作用

总结了飞秒激光与晶体和玻璃相互作用产生的新现象，如光致折射率改变、光致晶体相变、光还原稀土离子及光致发光等。并分析了它们可能的应用。同时简要的介绍了各种现象产生的机理，展望了飞秒激光与其它物质相互作用可能的研究方向及可能出现的新现象。指出了进行这些研究时可能采用的新方法。

Bimesogenic liquid crystals: New materials for high performance flexoelectric and blue phase displays

In this paper we will describe new bimesogenic nematic liquid crystals that have high flexoelectro-optic coefficients (e/K),of the order of 1.5 CN 1 m-1, high switching angles, up to 100° and fast response times, of the order of 100μs or less. We will describe devices constructed, using the ULH texture that may be switched to the optimum angle of 45° for a birefringence based device with the fields of 4Vμm-1 over a wide temperature range. Such devices use an "in plane" optical switching mode, have gray scale capability and a wide viewing angle. We will describe devices using the USH or Grandjean texture that have an optically isotropic "field off" black state, uses "in plane" switching E fields, to give an induced birefringence phase device, with switching times of the order of 20μs. We will briefly describe new highly reflective Blue Phase devices stable over a 50V temperature range in which an electric field is used to switch the reflection from red to green, for example. Full RGB reflections may be obtained with switching times of a few milliseconds. Finally we will briefly mention potential applications including high efficiency RGB liquid crystal laser sources. © 2006 SID.

Annealing ambient controlled deep defect formation in InP

Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy (DLTS), photo induced current transient spectroscopy (PICTS) and thermally stimulated current spectroscopy (TSC). Both DLTS results of annealed semiconducting InP and PICTS and TSC results of annealed semi-insulating InP indicate that InP annealed in phosphorus ambient has five defects, while lid? annealed in iron phospbide ambient has two defects. Such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. The correlation of the defects and the nature of the defects in annealed InP are discussed based on the results.

Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers

Semi-insulating (SI) InP wafers of 2 and 3 in. diameters have been prepared by annealing undoped LEC InP at 930 degreesC for 80 h under pure phosphorus ambient (PP) and iron phosphide ambient (IP). The electrical uniformity of annealed undoped SI wafers, along with a Fe-doped as-grown SI LEC InP wafer, has been characterized by whole wafer PL mapping and radial Hall measurements. Defects in these wafers have been detected by photo-induced current transient spectroscopy (PICTS). The results indicated that the uniformity of IP wafer is much better than that of PP wafer and as-grown Fe-doped Si InP wafer. There are fewer traps in undoped SI InP IP wafer than in as grown Fe-doped and undoped SI InP PP wafer, as evidenced by PICTS. The good uniformity of the IP wafer is related to the nonexistence of high concentration of thermally induced defects. The mechanism for this phenomenon is discussed based on the results. (C) 2002 Elsevier Science B.V. All rights reserved.

Experimental study on polarization holographic storage in genetic mutant BR-D96N film

Recording with both parallel and orthogonal linearly polarized lights, polarization holographic storage in genetic mutant BR-D96N film is reported with both transmission type geometry and reflection type geometry. Polarization properties of diffraction light and scattering light are discussed for two different cases, parallel polarization recording and orthogonal polarization recording. It shows that, compared with recording with parallel polarization lights, orthogonal polarization holography can separate the diffraction light from the scattering noise, therefore improving the signal-to-noise ratio. It also shows that, compared with reconstruction with reference light, reconstruction with phase conjugated wave of the reference light can improve the signal-to-noise ratio of the reconstructed diffraction image, and also the wave-front aberration of the object light introduced by irregular phase object in the optical pass-way can also be corrected effectively, which ensures that the reconstructed diffraction image has a better fidelity. The preliminary angle-multiplexed volume holographic storage multiplexed by transmission type geometry and reflection type geometry is demonstrated in the BR-D96N film. Experiment shows that there is no cross-talk between the two pages of images except for some scattering noises.

Preparation of Semi-Insulating Material by Annealing Undoped InP

Semi-insulating (SI) InP wafers of 50 and 75mm in diameter can be obtained by annealing of undoped liquid encapsulated Czochralski (LEC) InP at 930 ℃ for 80h. The annealing ambient can be pure phosphorus (PP) or iron phosphide (IP). The IP-SI InP wafers have good electrical parameters and uniformity of whole wafer. However, PP-SI InP wafers exhibit poor uniformity and electrical parameters, Photoluminescence which is subtle to deep defect appears in IP-annealed semi-insulating InP. Traps in annealed SI InP are detected by the spectroscopy of photo-induced current transient. The results indicate that there are fewer traps in IP-annealed undoped SI InP than those in as-grown Fe-doped and PP-undoped SI-undoped SI InP. The formation mechanism of deep defects in annealed undoped InP is discussed.

Annealing ambient controlled deep defect formation in InP

Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy (DLTS), photo induced current transient spectroscopy (PICTS) and thermally stimulated current spectroscopy (TSC). Both DLTS results of annealed semiconducting InP and PICTS and TSC results of annealed semi-insulating InP indicate that InP annealed in phosphorus ambient has five defects, while lid? annealed in iron phospbide ambient has two defects. Such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. The correlation of the defects and the nature of the defects in annealed InP are discussed based on the results.

Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers

Semi-insulating (SI) InP wafers of 2 and 3 in. diameters have been prepared by annealing undoped LEC InP at 930 degreesC for 80 h under pure phosphorus ambient (PP) and iron phosphide ambient (IP). The electrical uniformity of annealed undoped SI wafers, along with a Fe-doped as-grown SI LEC InP wafer, has been characterized by whole wafer PL mapping and radial Hall measurements. Defects in these wafers have been detected by photo-induced current transient spectroscopy (PICTS). The results indicated that the uniformity of IP wafer is much better than that of PP wafer and as-grown Fe-doped Si InP wafer. There are fewer traps in undoped SI InP IP wafer than in as grown Fe-doped and undoped SI InP PP wafer, as evidenced by PICTS. The good uniformity of the IP wafer is related to the nonexistence of high concentration of thermally induced defects. The mechanism for this phenomenon is discussed based on the results. (C) 2002 Elsevier Science B.V. All rights reserved.