Accurate determination of electronic transition energy of carbon nanotubes from the resonant behavior of radial breathing modes and their overtones

The resonant Raman behavior of the radial breathing modes are very useful to analyze the electronic property of carbon nanotubes. We investigated the resonant behaviors of Stokes and anti-Stokes radial breathing mode and its overtone of a metallic nanotube, and show how to accurately determine the electronic transition energy of carbon nanotubes from radial breathing modes and their overtones. Based on the present results, the previously reported resonant Raman behavior of the radial breathing modes of SWINT bundles can be interpreted very well.

PRESSURE BEHAVIOR OF INXGA1-XAS/GAAS STRAINED QUANTUM-WELLS WITH DIFFERENT WIDTHS

The photoluminescence of InxGa1-xAs/GaAs strained quantum wells with widths of 30 angstrom to 160 angstrom have been studied at 77 K under hydrostatic pressure up to 60 kbar. It is found that the pressure coefficients of exciton peaks from 1st conduction subband to heavy hole subband increase from 9.74 meV/kbar for a 160 angstrom well to 10.12 meV/kbar for a 30 angstrom well. The calculation based on the Kronig-Penney model indicated that the extension of the electronic wave function to the barrier layer in the narrow wells is one of the reasons for the increase of the pressure coefficients with the decrease of well width. Two peaks related to indirect transitions were observed at pressures higher than 50 kbar.

Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy

Ge composition dependence on the Ge cell temperature has been studied during the growth of Si1-xGex by disilane and solid Ge molecular beam epitaxy at a substrate temperature of 500 degrees C. It is found that the composition x increases and then saturates when the Ge cell temperature increases, which is different from the composition-dependent behavior in growth at high temperature as well as in growth by molecular beam epitaxy using disilane and germane. The enhanced hydrogen desorption from a Ge site alone cannot account for this abnormal composition-variation behavior. We attribute this behavior to the increase of rate constant of H desorption on a Si site when the Ge cell temperature increases.

Magnetophonon resonance in the energy relaxation of electrons in a quantum well

The magnetophonon resonance effect in the energy relaxation rate is studied theoretically for a quasi-two-dimensional electron gas in a semiconductor quantum well. An electron-temperature model is adopted to describe the coupled electron-phonon system. The energy relaxation time, derived from the energy relaxation rate, is found to display an oscillatory behavior as the magnetic-field strength changes, and reaches minima when the optical phonon frequency equals integer multiples of the electron cyclotron frequency. The theoretical results are compared with a recent experiment, and a qualitative agreement is found.

Threshold behavior in backgating in GaAs metal-semiconductor field-effect transistors: Induced by limitation of channel-substrate junction to leakage current

An analytical model is proposed to understand backgating in GaAs metal-semiconductor field-effect transistors (MESFETs), in which the effect of channel-substrate (CS) junction is included. We have found that the limitation of CS junction to leakage current will cause backgate voltage to apply directly to CS junction and result in a threshold behavior in backgating effect. A new and valuable expression for the threshold voltage has been obtained. The corresponding threshold electric field is estimated to be in the range of 1000-4000 V/cm and for the first time is in good agreement with reported experimental data. More, the eliminated backgating effect in MESFETs that are fabricated on the GaAs epitaxial layer grown at low temperature is well explained by our theory. (C) 1997 American Institute of Physics.

EER studies of the single quantum well GaAs/AlxGa1-xAs electrode/nonaqueous solution interface

The interfacial behavior of the single quantum well (SQW) GaAs/AlxGa1-xAs electrode in HQ/BQ and Fc/Fc(+) electrolytes was characterized respectively by studying the quantum confined Stark effect and Franz-Keldysh oscillation with electrolyte electroreflectance spectroscopy. The interaction of the surface state of the SQW electrode with redox species and its effects on the distribution of external bias at the interface of the SQW electrode are discussed.

A DOUBLE-QUANTUM-WELL IN A DRIVING LASER FIELD

The dynamic effect of electrons in a double quantum well under the influence of a monochromatic driving laser field is investigated. Closed-form solutions for the quasienergy and Floquet states are obtained with the help of SU(2) symmetry. For the case of weak interlevel coupling, explicit expressions of the quasienergy are presented by the use of perturbation theory, from which it is found that as long as the photon energy is not close to the tunnel splitting, the electron will be confined in an initially occupied eigenstate of the undriven system during the whole evolution process. Otherwise, it will transit between the lowest two levels in an oscillatory behavior.

1.3 mu m GaInNAs/GaAs quantum well lasers and photodetectors

The growth of GalnNAs/GaAs quantum well (QW) has been investigated by solid-source molecular beam epitaxy (MBE). N was introduced by a dc-active plasma source. Highest N concentration of 2.6% in GaInNAs/GaAs QW was obtained, corresponding to the photoluminescence peak wavelength of 1.57 mum at 10K. The nitrogen incorporation behavior in MBE growth and the quality improvement of the QW have been studied in detail. 1.3 mum GaInNAs/GaAs SQW laser and MQW resonant-cavity enhanced photodetector have been achieved.

Hydrogen behavior in GaN epilayers grown by NH3-MBE

Hydrogen behavior in unintentionally doped GaN epilayers on sapphire substrates grown by NH3-MBE is investigated. Firstly, we find by using nuclear reaction analysis (NRA) that with increasing hydrogen concentration the background electron concentration increases, which suggests that there exists a hydrogen-related donor in undoped GaN, Secondly, Fourier transform infrared (FTIR) absorption and X-ray photoelectron spectroscopy (XPS) reveal Further that hydrogen atom is bound to nitrogen atom in GaN with a local vibrational mode at about 3211 cm(-1) Hence, it is presumed that the hydrogen-related complex Ga. . .H-N is a hydrogen-related donor candidate partly responsible for high n-type background commonly observed in GaN films. Finally, Raman spectroscopy results of the epilayers show that ill addition to the expected compressive biaxial strain, in some cases GaN films suffer from serious tensile biaxial strain. This anomalous behavior has been well interpreted in terms of interstitial hydrogen lattice dilation. (C) 2001 Elsevier Science B.V. All rights reserved.

Behavior of Pentacene Initial Nucleation on Various Dielectrics and Its Effect on Carrier Transport in Organic Field-Effect Transistor

The influence of dielectric surface energy on the initial nucleation and the growth of pentacene films as well as the electrical properties of the pentacene-based field-effect transistors are investigated. We have examined a range of organic and inorganic dielectrics with different surface energies, such as polycarbonate/SiO2, polystyrene/SiO2, and PMMA/SiO2 bi-layered dielectrics and also the bare SiO2 dielectric. Atomic force microscopy measurements of sub-monolayer and thick pentacene films indicated that the growth of pentacene film was in Stranski-Kranstanow growth mode on all the dielectrics. However, the initial nucleation density and the size of the first-layered pentacene islands deposited on different dielectrics are drastically influenced by the dielectric surface energy. With the increasing of the surface energy, the nucleation density increased and thus the average size of pentacene islands for the first mono-layer deposition decreased. The performance of fabricated pentacene-based thin film transistors was found to be highly related to nucleation density and the island size of deposited Pentacene film, and it had no relationship to the final particle size of the thick pentacene film. The field effect mobility of the thin film transistor could be achieved as high as 1.38 cm(2)/Vs with on/off ratio over 3 x 10(7) on the PS/SiO2 where the lowest surface energy existed among all the dielectrics. For comparison, the values of mobility and on/off ratio were 0.42 cm(2)/Vs and 1 x 10(6) for thin film transistor deposited directly on bare SiO2 having the highest surface energy.

Peeling behavior of a bio-inspired nano-film on a substrate

A peeling model is proposed to analyze the peeling properties of bio-mimetic nano-films using the finite element method (FEM) and theoretical approach. The influences of the nano-film's adhesion length, thickness, elastic modulus, roughness and peeling angle on the peeling force were considered as well as the effect of the viscoelastic behavior. It has been found that the effective adhesion length, at which the peeling force attained maximum, was much smaller than the real length of nano-films; and the shear force dominated in the case of smaller peeling angles, whereas, the normal force dominated at larger peeling angles. The total peeling force decreased with an increasing peeling angle. Two limiting values of the peeling-off force can be found in the viscoelastic model, which corresponds to the smaller and larger loading rate cases. The effects of nano-film thickness and Young's modulus on peeling behaviors were also discussed. The results obtained are helpful for understanding the micro-adhesion mechanisms of biological systems, such as geckos. (C) 2010 Elsevier Ltd. All rights reserved.

Strain rate-dependent shear band behavior in bulk metallic glasses

In this article, we review our recent advances in understanding the deformation behavior of a typical tough Zr41.2Ti13.8Cu12.5Ni10Be22.5 (Vit 1) bulk metallic glass (BMG), as a model material, under various loading modes and strain rates, focusing particularly on the rate-dependence and formation mechanism of shear-banding. Dynamic and quasi-static mechanical experiments, including plate shear, shear punch and spherical indentation, and continuum as well as atomistic modeling on shear-banding are discussed. The results demonstrate that higher strain rate slows down the annihilation process of free volume, but promotes the free-volume coalescence, which is responsible for the rate-dependent shear banding. The physical origin of shear bands, that is the free volume softening underpinned by irreversible rearrangements of atoms, is unveiled. Finally, some concluding remarks are given.

Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description

Recent experimental works devoted to the phenomena of mixing observed at metallic multilayers Ni/Si irradiated by swift heavy ions irradiations make it necessary to revisit the insensibility of crystalline Si under huge electronic excitations. Knowing that Ni is an insensitive material, such observed mixing would exist only if Si is a sensitive material. In order to extend the study of swift heavy ion effects to semiconductor materials, the experimental results obtained in bulk silicon have been analyzed within the framework of the inelastic thermal spike model. Provided the quenching of a boiling ( or vapor) phase is taken as the criterion of amorphization, the calculations with an electron-phonon coupling constant g(300 K) = 1.8 x 10(12) W/cm(3)/K and an electronic diffusivity D-e(300 K) = 80 cm(2)/s nicely reproduce the size of observed amorphous tracks as well as the electronic energy loss threshold value for their creation, assuming that they result from the quenching of the appearance of a boiling phase along the ion path. Using these parameters for Si in the case of a Ni/Si multilayer, the mixing observed experimentally can be well simulated by the inelastic thermal spike model extended to multilayers, assuming that this occurs in the molten phase created at the Ni interface by energy transfer from Si. (C) 2009 Elsevier B. V. All rights reserved.

Power law behavior of the isotope yield distributions in the multifragmentation regime of heavy ion reactions

Isotope yield distributions in the multifragmentation regime were studied with high-quality isotope identification, focusing on the intermediate mass fragments (IMFs) produced in semiviolent collisions. The yields were analyzed within the framework of a modified Fisher model. Using the ratio of the mass-dependent symmetry energy coefficient relative to the temperature, a(sym)/T, extracted in previous work and that of the pairing term, a(p)/T, extracted from this work, and assuming that both reflect secondary decay processes, the experimentally observed isotope yields were corrected for these effects. For a given I = N - Z value, the corrected yields of isotopes relative to the yield of C-12 show a power law distribution Y (N, Z)/Y(C-12) similar to A(-tau) in the mass range 1 <= A <= 30, and the distributions are almost identical for the different reactions studied. The observed power law distributions change systematically when I of the isotopes changes and the extracted tau value decreases from 3.9 to 1.0 as I increases from -1 to 3. These observations are well reproduced by a simple deexcitation model, with which the power law distribution of the primary isotopes is determined to be tau(prim) = 2.4 +/- 0.2, suggesting that the disassembling system at the time of the fragment formation is indeed at, or very near, the critical point.

Effect of information transmission on cooperative behavior

Considering the fact, in the real world, that information is transmitted with a time delay, we study an evolutionary spatial prisoner's dilemma game where agents update strategies according to certain information that they have learned. In our study, the game dynamics are classified by the modes of information learning as well as game interaction, and four different combinations, i.e. the mean-field case, case I, case II and local case, are studied comparatively. It is found that the time delay in case II smoothes the phase transition from the absorbing states of C (or D) to their mixing state, and promotes cooperation for most parameter values. Our work provides insights into the temporal behavior of information and the memory of the system, and may be helpful in understanding the cooperative behavior induced by the time delay in social and biological systems.